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Download PGA26E07BA Product Overview - Panasonic Industrial Devices
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D 600V/70mΩ GaN Power Transistor G S PGA26E07BA Product Overview Overview Panasonic’s GaN power transistors offer superior device performances enabling higher power conversion efficiency and higher power density of power electronic systems than those by conventional Si-based power devices. Features – Crystal growth of GaN on 6-inch silicon substrate. – 600V enhancement mode power switch Normally-Off operation with single GaN device by Panasonic’s proprietary GIT: Gate Injection Transistor technology. – Extremely high-speed switching characteristics. – Current Collapse Free 600V and more. – Zero recovery loss characteristics. Applications – Power supply for AC-DC (PFC, Isolated DC-DC) – Battery charger system – Photovoltaic power converter, Motor inverter Absolute Maximum Ratings (Tj=25℃, unless otherwise specified) Item Symbol Ratings Unit Drain-source voltage(DC) VDSS 600 V Drain-source voltage( pulse) VDSP 750 V Gate current( DC ) IG 50 mA Drain current (DC) (Tc=25℃) ID 26 A Junction temperature Tj 150 ℃ Storage temperature Tstg -55 to +150 ℃ Symbol Ratings Unit Thermal resistance (junction to case) Rth(j-c) max 1.3 ℃/W Thermal resistance (junction to ambient) Rth(j-a) max 46 ℃/W PD 96 W Note) All conditions should be within 150℃ Tj. Thermal Characteristics (Typical values, unless otherwise specified) Item Power dissipation (Tc=25℃) As of March, 2017 FLY000074_EN Electrical Characteristics (Typical values at Tj=25℃, unless otherwise specified) Item Symbol Condition VDS=600V, VGS=0V, Tj=25℃ Value Unit max100 uA 100 uA Drain cut-off current IDSS Gate-source leakage current IGSS VGS= -3V, VDS=0V -1 uA Gate threshold voltage VTH VDS=10V, IDS=2.6mA 1.2 V IGS=26.1mA, IDS=8A, Tj=25℃ 56 mΩ IGS=26.1mA, IDS=8A, Tj=150℃ 110 mΩ f=100 MHz, open drain 0.6 Ω 405 pF 71 pF Drain-source on-state resistance RDS(on) VDS=600V, VGS=0V, Tj=150℃ Gate resistance RG Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss 0.4 pF Effective output capacitance (energy related) Co(er) 87 pF Co(tr) 106 pF Gate charge Qg 5.0 nC Gate-source charge Qgs 0.9 nC Gate-drain charge Qgd 2.6 nC 1.7 V 2.1 V 0 nC 45 nC VDS=400V, VGS=0V, f=1MHz VDS=0V to 480V Effective output capacitance (time related) Gate plateau voltage Source-drain forward voltage Reverse recovery charge Output charge VDD=400V, IDS=8A Vplateau VDD=400V, IDS=8A VSD Qrr Qoss VGS=0V,ISD=8A VDS=400V, ISD=8A Package Outline Unit: mm