Download STL23NM50N

STL23NM50N
N-channel 500 V, 0.170 Ω typ., 14 A MDmesh™ II Power MOSFET
in a PowerFLAT™ 8x8 HV package
Datasheet — production data
Features
Type
VDSS @
TJmax
RDS(on)
max
ID
STL23NM50N
550 V
< 0.210 Ω
14 A (1)
3
3
3
"OTTOMVIEW
'
$
1. The value is rated according to Rthj-case
■
100% avalanche tested
■
Low input capacitance and gate charge
■
Low gate input resistance
0OWER&,!4˜X(6
Applications
■
Switching applications
Description
Figure 1.
This device is an N-channel Power MOSFET
developed using the second generation of
MDmesh™ technology. This revolutionary Power
MOSFET associates a vertical structure to the
company’s strip layout to yield one of the world’s
lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high
efficiency converters.
Internal schematic diagram
$
'
3
!-V
Table 1.
Device summary
Order code
Marking
Package
Packaging
STL23NM50N
23NM50N
PowerFLAT™ 8x8 HV
Tape and reel
October 2012
Doc ID 022339 Rev 2
This is information on a product in full production.
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13
Contents
STL23NM50N
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................ 6
3
Test circuits
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2/13
.............................................. 8
Doc ID 022339 Rev 2
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STL23NM50N
1
Electrical ratings
Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Parameter
Value
Unit
VDS
Drain-source voltage (VGS = 0)
500
V
VGS
Gate-source voltage
± 25
V
Drain current (continuous) at TC = 25 °C
14
A
ID
(1)
ID (1)
Drain current (continuous) at TC = 100 °C
11
A
ID
(3)
Drain current (continuous) at Tamb = 25 °C
2.8
A
ID
(3)
Drain current (continuous) at Tamb = 100 °C
2.1
A
(1),(2)
Drain current (pulsed)
56
A
PTOT (3)
Total dissipation at Tamb = 25 °C
3
W
PTOT(1)
Total dissipation at TC = 25 °C
125
W
IDM
IAR
Avalanche current, repetitive or notrepetitive (pulse width limited by Tj max)
4
A
EAS
Single pulse avalanche energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
300
mJ
Peak diode recovery voltage slope
15
V/ns
- 55 to 150
°C
150
°C
Value
Unit
dv/dt (4)
Tstg
Storage temperature
Tj
Max. operating junction temperature
1. The value is rated according to Rthj-case
2. Pulse width limited by safe operating area
3. When mounted on FR-4 board of inch², 2oz Cu
4. ISD ≤ 14 A, di/dt ≤ 400 A/µs, VDSpeak ≤V(BR)DSS, VDD = 80% V(BR)DSS
Table 3.
Symbol
Thermal data
Parameter
Rthj-case
Thermal resistance junction-case max
1
°C/W
Rthj-amb(1)
Thermal resistance junction-amb max
45
°C/W
1. When mounted on 1inch² FR-4 board, 2 oz Cu
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Electrical characteristics
2
STL23NM50N
Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 4.
Symbol
On /off states
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
breakdown voltage
ID = 1 mA, VGS = 0
IDSS
Zero gate voltage
drain current
VDS = Max rating
VDS = Max rating, TC=125 °C
VGS = 0
1
100
µA
µA
IGSS
Gate-body leakage
current
VGS = ± 25 V, VDS = 0
100
nA
3
4
V
0.170
0.210
Ω
VGS(th)
Gate threshold voltage VDS = VGS, ID = 250 µA
RDS(on)
Static drain-source onVGS = 10 V, ID = 7 A
resistance
Table 5.
Symbol
Ciss
Coss
Crss
Coss eq. (1)
Qg
Qgs
Qgd
Rg
500
V
2
Dynamic
Parameter
Test conditions
Min.
Typ.
Max. Unit
-
pF
pF
pF
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 50 V, f = 1 MHz,
VGS = 0
-
1330
84
4.8
Equivalent output
capacitance
VGS = 0, VDS = 0 to 400 V
-
210
-
pF
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 400 V, ID = 17 A,
VGS = 10 V,
(see Figure 14)
-
45
7
24
-
nC
nC
nC
Gate input resistance
f=1 MHz Gate DC Bias=0
Test signal level=20 mV
open drain
-
4.6
-
Ω
1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDS
Table 6.
Symbol
td(on)
tr
td(off)
tf
4/13
Switching times
Parameter
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Test conditions
VDD = 250 V, ID = 17 A
RG = 4.7 Ω VGS = 10 V
(see Figure 13)
Min.
Typ.
-
6.6
19
71
29
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Max. Unit
-
ns
ns
ns
ns
STL23NM50N
Electrical characteristics
Table 7.
Symbol
Source drain diode
Parameter
Test conditions
Min
Typ.
Max
Unit
-
17
68
A
A
1.5
V
ISD
ISDM (1)
Source-drain current
Source-drain current (pulsed)
VSD (2)
Forward on voltage
ISD = 17 A, VGS = 0
-
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 17 A, di/dt = 100 A/µs
VDD = 60 V
(see Figure 18)
-
286
3700
26
ns
nC
A
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 17 A, di/dt = 100 A/µs
VDD = 60 V, Tj = 150 °C
(see Figure 18)
-
350
4800
27
ns
nC
A
trr
Qrr
IRRM
trr
Qrr
IRRM
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
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Electrical characteristics
STL23NM50N
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area
Figure 3.
Thermal impedance
AM10372v1
ID
(A)
Zth PowerFLAT 8x8 HV
K
Tj=150°C
Tc=25°C
Single pulse
δ=0.5
is
0.2
10µs
S(
o
n)
Op
Lim era
ite tion
d
by in th
m is
ax ar
RD ea
10
0.1
100µs
-1
10
0.05
0.02
1
1ms
0.01
Single pulse
10ms
-2
0.1
0.1
Figure 4.
)$
!
10
1
100
VDS(V)
Output characteristics
10 -5
10
Figure 5.
!-V
6'36
tp (s)
10
!-V
)$ !
6$36
6
6
Figure 6.
-2
-3
10
Transfer characteristics
-4
10
6$36
Normalized BVDSS vs temperature
AM10374v1
BVDSS
(norm)
Figure 7.
ID=1mA
6'36
Static drain-source on-resistance
AM10373v1
RDS(on) (Ω)
0.178
1.07
VGS=10V
0.176
1.05
0.174
1.03
0.172
1.01
0.170
0.99
0.168
0.166
0.97
0.164
0.95
0.93
-50 -25
6/13
0.162
0
25
50
75 100
TJ(°C)
0.160
0
2
4
6
8
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10
12
14 ID(A)
STL23NM50N
Figure 8.
Electrical characteristics
Gate charge vs gate-source voltage Figure 9.
!-V
6'3
6 6$3
6$$6
)$!
6$3
6
Capacitance variations
!-V
#
P&
#ISS
#OSS
#RSS
1GN#
Figure 10. Normalized gate threshold voltage
vs temperature
AM10375v1
VGS(th)
(norm)
AM10376v1
RDS(on)
1.00
1.7
0.90
1.3
0.80
0.9
25
0
75 100
50
ID=7A
2.1
ID=250µA
0.70
-50 -25
6$36
Figure 11. Normalized on-resistance vs
temperature
(norm)
1.10
TJ(°C)
0.5
-50 -25
0
25
50
75 100
TJ(°C)
Figure 12. Source-drain diode forward
characteristics
AM10377v1
VSD
(V)
1.4
TJ=-50°C
1.2
TJ=25°C
1.0
TJ=150°C
0.8
0.6
0.4
0.2
0
0
2
4
6
8
10
12
14 ISD(A)
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Test circuits
3
STL23NM50N
Test circuits
Figure 13. Switching times test circuit for
resistive load
Figure 14. Gate charge test circuit
VDD
12V
47kΩ
1kΩ
100nF
3.3
μF
2200
RL
μF
VGS
IG=CONST
VDD
100Ω
Vi=20V=VGMAX
VD
RG
2200
μF
D.U.T.
D.U.T.
VG
2.7kΩ
PW
47kΩ
1kΩ
PW
AM01468v1
AM01469v1
Figure 15. Test circuit for inductive load
Figure 16. Unclamped inductive load test
switching and diode recovery times
circuit
A
A
D.U.T.
FAST
DIODE
B
B
L
A
D
G
VD
L=100μH
S
3.3
μF
B
25 Ω
1000
μF
D
VDD
2200
μF
3.3
μF
VDD
ID
G
RG
S
Vi
D.U.T.
Pw
AM01470v1
Figure 17. Unclamped inductive waveform
AM01471v1
Figure 18. Switching time waveform
ton
V(BR)DSS
tdon
VD
toff
tr
tdoff
tf
90%
90%
IDM
10%
ID
VDD
10%
0
VDS
VDD
90%
VGS
AM01472v1
8/13
0
10%
Doc ID 022339 Rev 2
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AM01473v1
STL23NM50N
4
Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com. ECOPACK
is an ST trademark.
Table 8.
PowerFLAT™8x8 HV mechanical data
mm
Dim.
Min.
Typ.
Max.
A
0.80
0.90
1.00
A1
0.00
0.02
0.05
b
0.95
1.00
1.05
D
8.00
E
8.00
D2
7.05
7.20
7.30
E2
4.15
4.30
4.40
e
L
2.00
0.40
0.50
aaa
0.10
bbb
0.10
ccc
0.10
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0.60
9/13
Package mechanical data
STL23NM50N
Figure 19. PowerFLAT™ 8x8 HV drawing mechanical data
BOTTOM VIEW
b
CA B
L
bbb
0.40
E2
PIN#1 ID
D2
C
A
ccc C
A1
0.20±0.008
SIDE VIEW
SEATING
PLANE
0.08 C
D
A
B
E
INDEX AREA
aaa C
TOP VIEW
aaa C
8222871_Rev_B
10/13
Doc ID 022339 Rev 2
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STL23NM50N
Package mechanical data
Figure 20. PowerFLAT™ 8x8 HV recommended footprint
0.60
7.70
4.40
7.30
2.00
1.05
Footprint
Doc ID 022339 Rev 2
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Revision history
5
STL23NM50N
Revision history
Table 9.
12/13
Document revision history
Date
Revision
Changes
10-Oct-2011
1
First release.
08-Oct-2012
2
Updated title on the cover page.
Updated value for dv/dt on Table 2: Absolute maximum ratings.
Document status promoted from preliminary to production data.
Doc ID 022339 Rev 2
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STL23NM50N
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