Download STL3NM60N

STL3NM60N
N-channel 600 V, 1.5 Ω, 2.2 A MDmesh™ II Power MOSFET
in PowerFLAT™ 3.3 x 3.3 HV package
Datasheet — preliminary data
Features
Order code
RDS(on) max.
2
3
4
(1)
< 1.8 Ω
STL3NM60N
1
ID
2.2 A
1. The value is rated according to Rthj-case
8
5
7
6
■
100% avalanche tested
■
Low input capacitance and gate charge
■
Low gate input resistance
6
7
5
8
PowerFLAT™ 3.3x3.3 HV
Application
■
Switching applications
Description
Figure 1.
This device is an N-channel Power MOSFET
developed using the second generation of
MDmesh™ technology. This revolutionary Power
MOSFET associates a vertical structure to the
company’s strip layout to yield one of the world’s
lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high
efficiency converters.
Internal schematic diagram
4
G
5
6
3
D
2
1
7
8
S
Bottom View
Table 1.
Device summary
Order code
Marking
Package
Packaging
STL3NM60N
3NM60N
PowerFLAT™ 3.3 x 3.3 HV
Tape and reel
March 2012
Doc ID 022795 Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
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13
Contents
STL3NM60N)
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................. 6
3
Test circuits
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2/13
.............................................. 8
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STL3NM60N)
1
Electrical ratings
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage
600
V
VGS
Gate-source voltage
± 25
V
ID(1)
Drain current (continuous) at TC = 25 °C
2.2
A
ID (1)
Drain current (continuous) at TC=100 °C
1.7
A
ID
(2)
Drain current (continuous) at Tamb = 25 °C
0.65
A
ID
(2)
Drain current (continuous) at Tamb =100 °C
0.5
A
Drain current (pulsed)
2.6
A
2
W
22
W
1
A
119
mJ
0.016
W/°C
15
V/ns
-55 to 150
°C
Value
Unit
Thermal resistance junction-case max.
5.6
°C/W
Thermal resistance junction-amb max.
62.5
°C/W
IDM
(2)(3)
PTOT (2)
PTOT
(1)
IAS
Total dissipation at Tamb = 25 °C
Total dissipation at TC = 25 °C
Avalanche current, repetitive or not-repetitive
Single pulse avalanche energy
EAS
(3)
(4)
Derating factor (2)
dv/dt
(5)
TJ
Peak diode recovery voltage slope
Operating junction temperature
storage temperature
Tstg
1. The value is rated according Rthj-case.
2. When mounted on FR-4 board of 1inch², 2oz Cu, t < 10 sec
3. Pulse width limited by Tjmax
4. Starting Tj = 25 °C, ID= IAS, VDD = 50 V
5. ISD ≤ 2.2 A, dv/dt ≤ 400 A/µs,VDS peak ≤V(BR)DSS, VDD= 80% V(BR)DSS.
Table 3.
Thermal resistance
Symbol
Rthj-case
Rthj-amb
(1)
Parameter
1. When mounted on FR-4 board of 1inch², 2oz Cu, t < 10 sec.
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Electrical characteristics
2
STL3NM60N)
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 4.
Symbol
On/off states
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Drain-source breakdown
voltage (VGS= 0)
ID = 1 mA
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = 600 V,
VDS = 600 V, Tc = 125 °C
1
100
µA
µA
IGSS
Gate body leakage current
(VDS = 0)
VGS = ± 25 V
±100
nA
VGS(th)
Gate threshold voltage
VDS= VGS, ID = 250 µA
3
4
V
RDS(on)
Static drain-source on
resistance
VGS= 10 V, ID= 1 A
1.5
1.8
Ω
Min.
Typ.
Max.
Unit
V(BR)DSS
Table 5.
Symbol
600
V
2
Dynamic
Parameter
Test conditions
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 50V, f=1 MHz,
VGS=0
-
188
13
1.1
-
pF
pF
pF
(1)
Output equivalent
capacitance
VGS =0, VDS =0 to 480 V
-
100
-
pF
Rg
Gate input resistance
f=1 MHz gate DC bias=0
test signal level = 20 mV
open drain
-
6
-
Ω
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD= 480 V, ID = 2.2 A
VGS =10 V
(see Figure 15)
-
9.5
1.6
5.3
-
nC
nC
nC
Ciss
Coss
Crss
Coss eq.
1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
4/13
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STL3NM60N)
Electrical characteristics
Table 6.
Switching times
Symbol
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
td(on)
tr
td(off)
tf
Table 7.
Symbol
ISDM (1),(2)
(3)
trr
Qrr
IRRM
trr
Qrr
IRRM
Min.
Typ.
Max.
8.6
6.2
20.8
20
VDD= 300 V, ID = 1.1 A,
RG= 4.7 Ω, VGS = 10 V
(see Figure 14)
Unit
ns
ns
ns
ns
Source drain diode
Parameter
Test conditions
Min
Typ.
Source-drain current
ISD
VSD
Test conditions
Max
Unit
2.2
A
8.8
A
1.6
V
Source-drain current (pulsed)
Forward on voltage
ISD= 2.2 A, VGS=0
-
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD= 2.2 A,
di/dt = 100 A/µs,
VDD = 60 V
(see Figure 16)
-
168
672
8
ns
nC
A
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD= 2.2 A,
di/dt = 100 A/µs,
VDD = 60 V, Tj= 150 °C
(see Figure 16)
-
2.3
913
9
ns
nC
A
1. Pulse width limited by safe operating area.
2. When mounted on FR-4 board of 1inch², 2 oz Cu.
3. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
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Electrical characteristics
STL3NM60N)
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area
Figure 3.
Thermal impedance
AM11244v1
ID
(A)
Zth_powerFLAT 3.3x3.3
K
δ=0.5
1
Tj=150°C
Tc=25°C
Sinlge pulse
is
ea )
ar S(on
D
R
ax
0.2
is
th
0.05
in
n m
tio y
ra d b
e
e
p
O imit
L
0.1
0.1
-1
10µs
10
0.02
100µs
0.01
0.01
Zth=k Rthj-pcb
Rthj-pcb=62.5 °C/W
δ=tp/τ
1ms
10ms
tp
-2
0.001
0.1
Figure 4.
10
1
100
10 -3
10
VDS(V)
Output characteristics
Figure 5.
AM11245v1
ID
(A)
VGS=10V
5
3
2
2
5V
1
0
0
5
10
20
15
25
1
10
10
2
10
tp (s)
10
Transfer characteristics
AM11246v1
VDS=21V
30
1
VDS(V)
0
0
Gate charge vs gate-source voltage Figure 7.
AM11247v1
VDS (V)
VGS
(V)
VDD=480V
ID=2.2A
12
500
VDS
400
2
4
8
6
10
VGS(V)
Static drain-source on resistance
AM11248v1
RDS(on)
(Ω)
1.58
VGS=10V
1.56
1.54
1.52
8
300
6
1.50
1.48
200
4
100
2
1.46
1.44
1.42
0
6/13
10
ID
(A)
3
0
0
-1
4
6V
10
-2
5
4
Figure 6.
τ
Single pulse
2
4
6
8
0
10 Qg(nC)
1.40
0
0.5
1
1.5
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2
ID(A)
STL3NM60N)
Figure 8.
Electrical characteristics
Capacitance variations
Figure 9.
AM11249v1
C
(pF)
Output capacitance stored energy
AM11250v1
Eoss
(µJ)
1.5
1000
Ciss
1
100
Coss
0.5
Crss
VDS(V)
0
0
10
1
0.1
1
100
10
Figure 10. Normalized gate threshold voltage
vs temperature
AM11252v1
VGS(th)
400 500 600
200 300
100
VDS(V)
Figure 11. Normalized on resistance vs
temperature
AM11253v1
RDS(on)
(norm)
(norm)
2.5
1.10
ID=250µA
ID=2.2A
2.1
1.00
1.7
0.90
1.3
0.80
0.70
-50
0.9
-25
25
0
50
75 100
TJ(°C)
Figure 12. Normalized BVDSS vs temperature
AM11251v1
BVDSS
(norm)
0.5
-50 -25
0
75 100
50
TJ(°C)
Figure 13. Source-drain diode forward
characteristics
AM11254v1
VSD
(V)
1.4
1.07
ID=1mA
TJ=-50°C
1.05
1.2
1.03
1.0
1.01
0.8
0.99
0.6
0.97
0.4
0.95
0.2
0.93
-50 -25
25
TJ=25°C
TJ=150°C
0
0
25
50
75 100
TJ(°C)
0
0.5
1.0
1.5
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ISD(A)
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Test circuits
3
STL3NM60N)
Test circuits
Figure 14. Switching times test circuit for
resistive load
Figure 15. Gate charge test circuit
VDD
12V
47kΩ
1kΩ
100nF
3.3
μF
2200
RL
μF
VGS
IG=CONST
VDD
100Ω
Vi=20V=VGMAX
VD
RG
2200
μF
D.U.T.
D.U.T.
VG
2.7kΩ
PW
47kΩ
1kΩ
PW
AM01468v1
AM01469v1
Figure 16. Test circuit for inductive load
Figure 17. Unclamped inductive load test
switching and diode recovery times
circuit
A
A
D.U.T.
FAST
DIODE
B
B
L
A
D
G
VD
L=100μH
S
3.3
μF
B
25 Ω
1000
μF
D
VDD
2200
μF
3.3
μF
VDD
ID
G
RG
S
Vi
D.U.T.
Pw
AM01470v1
Figure 18. Unclamped inductive waveform
AM01471v1
Figure 19. Switching time waveform
ton
V(BR)DSS
tdon
VD
toff
tr
tdoff
tf
90%
90%
IDM
10%
ID
VDD
10%
0
VDS
VDD
90%
VGS
AM01472v1
8/13
0
10%
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AM01473v1
STL3NM60N)
4
Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
Table 8.
PowerFLAT™ 3.3 x 3.3 HV mechanical data
mm
Dim.
Min.
Typ.
Max.
A
0.80
0.90
1.00
A1
0
0.02
0.05
b
0.25
0.30
0.40
D
D2
3.30
2.50
E
E2
2.75
3.30
1.15
e
L
2.65
1.30
1.40
0.65
0.20
0.30
aaa
0.10
bbb
0.10
ccc
0.10
ddd
0.05
eee
0.08
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0.40
9/13
Package mechanical data
STL3NM60N)
Figure 20. PowerFLAT™ 3.3 x 3.3 HV drawing
.
8374983_Rev_A
10/13
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STL3NM60N)
Package mechanical data
Figure 21. PowerFLAT™ 3.3 x 3.3 HV recommended footprint
(dimensions are in mm)
8374983_footprint
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Revision history
5
STL3NM60N)
Revision history
Table 9.
12/13
Document revision history
Date
Revision
14-Mar-2012
1
Changes
First release.
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STL3NM60N)
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