Download VT6J1

1.2V Drive Pch + Pch MOSFET
VT6J1
Structure
Silicon P-channel MOSFET
Dimensions (Unit : mm)
1.2
Features
1) Low on-resistance.
2) Small package(VMT6).
3) Low voltage drive(1.2V drive).
1.2
(6)
0.5
(5) (4)
0.92
0.14
VMT6
0.14
(1)
(2) (3)
0.16
0.13
0.4 0.4
0.8± 0.1
Abbreviated symbol : J01
Application
Switching
Inner circuit
Packaging specifications
Type
Package
Code
Basic ordering unit (pieces)
VT6J1
(6)
Taping
T2CR
8000

(5)
(4)
∗1
∗2
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Drain
(4) Tr2 Source
(5) Tr2 Gate
(6) Tr1 Drain
∗2
∗1
(1)
(2)
(3)
*1 ESD PROTECTION DIODE
*2 BODY DIODE
Absolute maximum ratings (Ta = 25C)
Parameter
Symbol
Limits
Unit
Drain-source voltage
VDSS
20
V
Gate-source voltage
VGSS
10
V
Continuous
ID
100
mA
Pulsed
IDP
400
mA
Drain current
Power dissipation
Channel temperature
Range of storage temperature
PD
Tch
Tstg
*1
*2
0.15
W/TOTAL
0.12
W/ELEMENT
150
C
55 to 150
C
*1 Pw10s, Duty cycle1%
*2 Each terminal mounted on a reference land.
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1/5
2012.04 - Rev.B
DataSheet
VT6J1
Electrical characteristics (Ta = 25C)
<It is the same ratings for Tr1 and Tr2.>
Parameter
Gate-source leakage
Symbol
Gate threshold voltage
Static drain-source on-state
resistance
Typ.
Max.
Unit
Conditions
-
-
10
A
VGS=10V, VDS=0V
20
-
-
V
ID=1mA, VGS=0V
IDSS
-
-
1
A
VDS=20V, VGS=0V
VGS (th)
0.3
-
1.0
V
-
2.5
3.8
-
3.4
5.1
IGSS
Drain-source breakdown voltage V (BR)DSS
Zero gate voltage drain current
Min.
RDS (on)*
VDS=10V, ID=100A
ID=100mA, VGS=4.5V
ID=50mA, VGS=2.5V

-
4.8
8.2
-
6.0
13.2
ID=20mA, VGS=1.8V
ID=10mA, VGS=1.5V
-
10.0
40.0
ID=1mA, VGS=1.2V
l Yfs l *
120
-
-
mS VDS=10V, ID=100mA
Input capacitance
Ciss
-
15.0
-
pF
VDS=10V
Output capacitance
Coss
-
4.0
-
pF
VGS=0V
Reverse transfer capacitance
Crss
-
1.5
-
pF
f=1MHz
Turn-on delay time
td(on)*
-
46
-
ns
VDD 10V, ID=50mA
tr *
-
62
-
ns
VGS=4.5V
td(off)*
-
325
137
-
ns
ns
RL=200
RG=10
Min.
Typ.
Max.
Unit
-
-
1.2
V
Forward transfer admittance
Rise time
Turn-off delay time
Fall time
tf *
*Pulsed
Body diode characteristics (Source-Drain)
<It is the same ratings for Tr1 and Tr2.>
Parameter
Forward Voltage
Symbol
VSD *
Conditions
Is=100mA, VGS=0V
*Pulsed
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© 2012 ROHM Co., Ltd. All rights reserved.
2/5
2012.04 - Rev.B
DataSheet
VT6J1
Electrical characteristic curves
1
0.1
VDS= −10V
Pulsed
Ta=25°C
Pulsed
0.08
0.06
VGS= −4.5V
VGS= −4.0V
VGS= −2.5V
VGS= −2.0V
VGS= −1.8V
0.04
VGS= −1.5V
0.02
VGS= −1.2V
VGS= −1.5V
VGS= −4.5V
VGS= −4.0V
VGS= −2.5V
VGS= −2.0V
VGS= −1.8V
0.06
0.04
0
0.2
0.4
0.6
0.8
VGS= −1.2V T =25°C
a
Pulsed
2
100000
6
8
10
VGS= −1.2V
VGS= −1.5V
VGS= −1.8V
VGS= −2.5V
VGS= −4.5V
0.01
0.1
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= -25°C
10000
1000
100
0.0001
1
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅰ)
0.001
0.01
0.1
0.001
0.01
0.1
100
0.0001
DRAIN-CURRENT : −ID[A]
Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅳ)
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© 2012 ROHM Co., Ltd. All rights reserved.
0.01
0.1
1
DRAIN-CURRENT : −ID[A]
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅲ)
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(ON)[mΩ]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(ON)[mΩ]
1
0.001
100000
VGS= −1.5V
Pulsed
10000
1000
100
0.0001
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= -25°C
1000
1
100000
10000
2
10000
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅱ)
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= -25°C
1.5
VGS= −2.5V
Pulsed
DRAIN-CURRENT : −ID[A]
100000
1
100000
VGS= −4.5V
Pulsed
DRAIN-CURRENT : −ID[A]
VGS= −1.8V
Pulsed
0.5
GATE-SOURCE VOLTAGE : −VGS[V]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(ON)[mΩ]
10000
0.001
0
Fig.3 Typical Transfer Characteristics
100000
Ta=25°C
Pulsed
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(ON)[mΩ]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(ON)[mΩ]
4
Fig.2 Typical output characteristics(Ⅱ)
Fig.1 Typical output characteristics(Ⅰ)
100
0.0001
0.01
DRAIN-SOURCE VOLTAGE : −VDS[V]
DRAIN-SOURCE VOLTAGE : −VDS[V]
1000
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= -25°C
0.0001
0
1
0.1
0.001
0.02
0
0
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(ON)[mΩ]
DRAIN CURRENT : −ID[A]
0.08
DRAIN CURRENT : −ID[A]
DRAIN CURRENT : −ID[A]
0.1
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= -25°C
10000
1000
100
0.0001
0.001
0.01
0.1
DRAIN-CURRENT : −ID[A]
Fig.8 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅴ)
3/5
VGS= −1.2V
Pulsed
1
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= -25°C
1000
100
0.0001
0.001
0.01
0.1
1
DRAIN-CURRENT : −ID[A]
Fig.9 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅵ)
2012.04 - Rev.B
1
0.1
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= -25°C
0.01
0.01
0.1
10000
VGS=0V
Pulsed
0.1
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(ON)[mΩ]
VDS= −10V
Pulsed
REVERSE DRAIN CURRENT : −IS[A]
FORWARD TRANSFER ADMITTANCE : |Yfs| [S]
1
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= -25°C
Ta=25°C
Pulsed
8000
ID= −0.001A
6000
ID= −0.1A
4000
2000
0
0.01
0
1
DRAIN-CURRENT : −ID[A]
0.5
1
1.5
SOURCE-DRAIN VOLTAGE : −VSD [V]
Fig.11 Reverse Drain Current
vs. Sourse-Drain Voltage
Fig.10 Forward Transfer Admittance
vs. Drain Current
0
2
4
6
8
10
GATE-SOURCE VOLTAGE : −VGS[V]
Fig.12 Static Drain-Source On-State
Resistance vs. Gate Source Voltage
100
1000
Ta=25°C
VDD= −10V
VGS=−4.5V
RG=10Ω
Pulsed
100
Ciss
CAPACITANCE : C [pF]
td(off)
SWITCHING TIME : t [ns]
DataSheet
VT6J1
tf
tr
td(on)
10
Coss
1
Crss
Ta=25°C
f=1MHz
VGS=0V
0
10
0.01
0.1
1
0.01
0.1
1
10
100
DRAIN-CURRENT : −ID[A]
GATE-SOURCE VOLTAGE : −VDS[V]
Fig.13 Switching Characteristics
Fig.14 Typical Capacitance
vs. Drain-Source Voltage
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4/5
2012.04 - Rev.B
DataSheet
VT6J1
Measurement circuits
Pulse width
ID
VDS
VGS
VGS
10%
50%
90%
50%
RL
10%
D.U.T.
RG
VDD
VDS
90%
td(on)
tr
ton
Fig.1-1 Switching Time Measurement Circuit
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© 2012 ROHM Co., Ltd. All rights reserved.
10%
90%
td(off)
tf
toff
Fig.1-2 Switching Waveforms
5/5
2012.04 - Rev.B
Notice
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R1120A