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1.5V Drive Pch +SBD MOSFET TT8U1 zStructure Silicon P-channel MOSFET / schottky barrier diode zDimensions (Unit : mm) TSST8 zFeatures 1) Low On-resistance. 2) High Power Package. 3) Low voltage drive. (1.5V) (8) (7) (6) (5) (1) (2) (3) (4) Abbreviated symbol : U01 Each lead has same dimensions zApplications Switching zInner circuit zPackaging specifications Package Type (8) (7) (6) (5) Taping TR Code Basic ordering unit (pieces) 3000 ∗1 TT8U1 (1) (2) ∗1 BODY DIODE zAbsolute maximum ratings (Ta=25°C) (3) (4) (1) Anode (2) Anode (3) Source (4) Gate (5) Drain (6) Drain (7) Cathode (8) Cathode <MOSFET> Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Channel temperature Power dissipation Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 Tch PD ∗2 Limits −20 ±10 ±2.4 ±9.6 −0.8 −9.6 150 1.0 Unit V V A A A A °C W / ELEMENT Symbol VRM VR IF IFSM ∗1 Limits 30 20 1.0 3.0 150 1.0 Unit V V A A °C W / ELEMENT ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board <Di> Parameter Repetitive peak reverse voltage Reverse voltage Forward current Forward current surge peak Junction temperature Power dissipation Tj PD ∗2 ∗1 60HZ / 1Cycle ∗2 Mounted on a ceramic board <MOSFET and Di> Parameter Symbol Total power dissipation Range of Storage temperature PD Tstg ∗ Limits Unit 1.25 −55 to +150 W / TOTAL °C ∗ Mounted on a ceramic board www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 1/5 2009.06 - Rev.A Data Sheet TT8U1 zElectrical characteristics (Ta=25°C) <MOSFET> Parameter Symbol Min. Typ. Max. Gate-source leakage − IGSS Drain-source breakdown voltage V(BR) DSS −20 IDSS Zero gate voltage drain current − Gate threshold voltage VGS (th) −0.3 − Static drain-source on-state − ∗ RDS (on) resistance − − Forward transfer admittance Yfs ∗ 2.4 Input capacitance Ciss − Output capacitance Coss − Crss Reverse transfer capacitance − td (on) ∗ Turn-on delay time − tr ∗ Rise time − td (off) ∗ Turn-off delay time − tf ∗ Fall time − Qg ∗ Total gate charge − Qgs ∗ Gate-source charge − − Qgd ∗ Gate-drain charge − − − − 80 105 150 180 − 850 60 50 9 25 55 45 6.7 1.7 0.6 ±100 − −1 −1.0 105 140 225 360 − − − − − − − − − − − Unit nA V µA V mΩ mΩ mΩ mΩ S pF pF pF ns ns ns ns nC nC nC Min. Typ. Max. Unit − − −1.2 V Conditions VGS=±10V, VDS=0V ID= −1mA, VGS=0V VDS= −20V, VGS=0V VDS= −10V, ID= −1mA ID= −2.4A, VGS= −4.5V ID= −1.2A, VGS= −2.5V ID= −1.2A, VGS= −1.8V ID= −0.5A, VGS= −1.5V VDS= −10V, ID= −2.4A VDS= −10V VGS=0V f=1MHz VDD −10V VGS= −4.5V ID= −1.2A RL 8.3Ω RG=10Ω VDD −10V VGS= −4.5V ID= −2.4A RL 4.2Ω / RG=10Ω ∗Pulsed <MOSFET> Body diode (source-drain) Parameter Symbol Forward voltage VSD ∗ Conditions IS= −2.4A, VGS=0V ∗Pulsed <Di> Parameter Symbol Min. Typ. Max. Unit Forward voltage drop VF Reverse leakage IR − − 0.37 − 0.41 500 V µA www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ Conditions IF= 1.0A VR=20V 2/5 2009.06 - Rev.A Data Sheet TT8U1 zElectrical characteristics curves 5 VGS= -10V VGS= -4.5V 4 VGS= -2.5V VGS= -1.8V 3 10 2 VGS= -1.5V 1 4 VGS= -4.5V 3 VGS= -2.5V VGS= -1.8V 2 0 VGS= -1.5V VGS= -1.4V 0.6 0.8 1 2 4 8 0 10 1 1.5 DRAIN-SOURCE VOLTAGE : -VDS[V] GATE-SOURCE VOLTAGE : -VGS[V] Fig.2 Typical output characteristics(Ⅱ) Fig.3 Typical Transfer Characteristics VGS= -1.5V VGS= -1.8V VGS= -2.5V VGS= -4.5V 1000 VGS= -4.5V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= -25°C STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] 1000 Ta=25°C Pulsed 100 10 1 DRAIN-CURRENT : -ID [A] 1 100 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 10 0.1 1 Fig.6 Static Drain-Source On-State Resistance vs. Drain Current(Ⅱ) 1000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] 100 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 10 Resistance vs. Drain Current(Ⅲ) VGS= -1.5V Pulsed 100 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 10 10 0.1 1 10 DRAIN-CURRENT : -ID [A] DRAIN-CURRENT : -ID [A] Fig.7 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ) Fig.8 Static Drain-Source On-State Resistance vs. Drain Current(Ⅴ) www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 3/5 10 DRAIN-CURRENT : -ID [A] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current(Ⅰ) 1 VGS= -2.5V Pulsed DRAIN-CURRENT : -ID [A] Fig.4 Static Drain-Source On-State VGS= -1.8V Pulsed 2 10 0.1 10 FORWARD TRANSFER ADMITTANCE : |Yfs| [S] 0.1 0.1 0.5 DRAIN-SOURCE VOLTAGE : -VDS[V] 10 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] 6 Fig.1 Typical output characteristics(Ⅰ) 100 1000 Ta= 25°C Ta= - 25°C 0.1 0.001 0 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] 1000 0.4 Ta= 125°C Ta= 75°C Ta=25°C Pulsed 0 0.2 1 0.01 1 VGS= -1.4V 0 VDS= -10V Pulsed VGS= -10V DRAIN CURRENT : -ID [A] Ta=25°C Pulsed DRAIN CURRENT : -ID [A] DRAIN CURRENT : -ID [A] 5 10 VDS= -10V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 1 0.1 0.1 1 10 DRAIN-CURRENT : -ID [A] Fig.9 Forward Transfer Admittance vs. Drain Current 2009.06 - Rev.A Data Sheet TT8U1 1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.1 200 150 ID = -2.4A 100 ID = -1.2A 50 1 0 1.5 SOURCE-DRAIN VOLTAGE : -VSD [V] 4 CAPACITANCE : C [pF] GATE-SOURCE VOLTAGE : -VGS [V] 2 4 6 8 10000 3 2 Ta=25°C VDD = -10V ID = -2.4A R G=10Ω Pulsed 0 10 td(on) 0.01 10 0.1 Ta=25°C f=1MHz VGS=0V Ciss 1 10 DRAIN-CURRENT : -ID [A] Fig.12 Switching Characteristics Fig.11 Static Drain-Source On-State Resistance vs. Gate Source Voltage Fig.10 Reverse Drain Current vs. Sourse-Drain Voltage 1 100 GATE-SOURCE VOLTAGE : -VGS[V] 5 R G=10Ω Pulsed td (off) tf tr 1000 Coss 100 Crss 100 REVERSE CURRENT : IR [mA] 0.5 1000 1 0 0.01 0 Ta=25°C VDD = -10V VGS= -4.5V Ta=25°C Pulsed SWITCHING TIME : t [ns] VGS=0V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(ON)[mΩ] REVERSE DRAIN CURRENT : -Is [A] 10000 250 10 pulsed Ta = 125℃ 10 1 Ta = 75℃ 0.1 Ta = 25℃ 0.01 0.001 Ta= - 25℃ 10 0 2 4 6 8 0.01 0.1 1 10 100 0.0001 0 TOTAL GATE CHARGE : Qg [nC] DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.13 Dynamic Input Characteristics Fig.14 Typical Capacitance vs. Drain-Source Voltage 10 20 30 40 REVERSE VOLTAGE : VR [V] Fig.15 Reverse Current vs. Reverse Voltage 10000 FORWARD CURRENT : IF[mA] pulsed 1000 100 Ta = 125℃ Ta = 75℃ Ta= 25℃ 10 Ta= - 25℃ 1 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 FORWARD VOLTAGE : VF[V] Fig.16 Forward Current vs. Forward Voltage www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 4/5 2009.06 - Rev.A Data Sheet TT8U1 zMeasurement circuits Pulse width ID VGS VDS VGS 10% 50% RL D.U.T. RG 90% 50% 10% VDD VDS 10% 90% td(on) tr ton 90% td(off) tf toff Fig.1-2 Switching Waveforms Fig.1-1 Switching Time Measurement Circuit VG ID Qg VDS VGS RL VGS D.U.T. IG(Const.) RG Qgs Qgd VDD Charge Fig.2-2 Gate Charge Waveform Fig.2-1 Gate Charge Measurement Circuit zNotice 1. SBD has a large reverse leak current compared to other type of diode. Therefore ; it would raise a junction temperature, and increase a reverse power loss. Further rise of inside temperature would cause a thermal runaway. This built-in SBD has low VF characteristics and therefore, higher leak current. Please consider enough the surrounding temperature, generating heat of MOSFET and the reverse current. 2. This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 5/5 2009.06 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM and other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the use of such technical information. The Products specified in this document are intended to be used with general-use electronic equipment or devices (such as audio visual equipment, office-automation equipment, communication devices, electronic appliances and amusement devices). The Products specified in this document are not designed to be radiation tolerant. While ROHM always makes efforts to enhance the quality and reliability of its Products, a Product may fail or malfunction for a variety of reasons. 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