Download TT8U1

1.5V Drive Pch +SBD MOSFET
TT8U1
zStructure
Silicon P-channel MOSFET / schottky barrier diode
zDimensions (Unit : mm)
TSST8
zFeatures
1) Low On-resistance.
2) High Power Package.
3) Low voltage drive. (1.5V)
(8)
(7)
(6)
(5)
(1)
(2)
(3)
(4)
Abbreviated symbol : U01
Each lead has same dimensions
zApplications
Switching
zInner circuit
zPackaging specifications
Package
Type
(8)
(7)
(6)
(5)
Taping
TR
Code
Basic ordering unit (pieces)
3000
∗1
TT8U1
(1)
(2)
∗1 BODY DIODE
zAbsolute maximum ratings (Ta=25°C)
(3)
(4)
(1) Anode
(2) Anode
(3) Source
(4) Gate
(5) Drain
(6) Drain
(7) Cathode
(8) Cathode
<MOSFET>
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Channel temperature
Power dissipation
Continuous
Pulsed
Continuous
Pulsed
Symbol
VDSS
VGSS
ID
IDP ∗1
IS
ISP ∗1
Tch
PD ∗2
Limits
−20
±10
±2.4
±9.6
−0.8
−9.6
150
1.0
Unit
V
V
A
A
A
A
°C
W / ELEMENT
Symbol
VRM
VR
IF
IFSM ∗1
Limits
30
20
1.0
3.0
150
1.0
Unit
V
V
A
A
°C
W / ELEMENT
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board
<Di>
Parameter
Repetitive peak reverse voltage
Reverse voltage
Forward current
Forward current surge peak
Junction temperature
Power dissipation
Tj
PD
∗2
∗1 60HZ / 1Cycle
∗2 Mounted on a ceramic board
<MOSFET and Di>
Parameter
Symbol
Total power dissipation
Range of Storage temperature
PD
Tstg
∗
Limits
Unit
1.25
−55 to +150
W / TOTAL
°C
∗ Mounted on a ceramic board
www.rohm.com
c 2009 ROHM Co., Ltd. All rights reserved.
○
1/5
2009.06 - Rev.A
Data Sheet
TT8U1
zElectrical characteristics (Ta=25°C)
<MOSFET>
Parameter
Symbol
Min.
Typ.
Max.
Gate-source leakage
−
IGSS
Drain-source breakdown voltage V(BR) DSS −20
IDSS
Zero gate voltage drain current
−
Gate threshold voltage
VGS (th) −0.3
−
Static drain-source on-state
−
∗
RDS (on)
resistance
−
−
Forward transfer admittance
Yfs ∗ 2.4
Input capacitance
Ciss
−
Output capacitance
Coss
−
Crss
Reverse transfer capacitance
−
td (on) ∗
Turn-on delay time
−
tr ∗
Rise time
−
td (off) ∗
Turn-off delay time
−
tf ∗
Fall time
−
Qg ∗
Total gate charge
−
Qgs ∗
Gate-source charge
−
−
Qgd ∗
Gate-drain charge
−
−
−
−
80
105
150
180
−
850
60
50
9
25
55
45
6.7
1.7
0.6
±100
−
−1
−1.0
105
140
225
360
−
−
−
−
−
−
−
−
−
−
−
Unit
nA
V
µA
V
mΩ
mΩ
mΩ
mΩ
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Min.
Typ.
Max.
Unit
−
−
−1.2
V
Conditions
VGS=±10V, VDS=0V
ID= −1mA, VGS=0V
VDS= −20V, VGS=0V
VDS= −10V, ID= −1mA
ID= −2.4A, VGS= −4.5V
ID= −1.2A, VGS= −2.5V
ID= −1.2A, VGS= −1.8V
ID= −0.5A, VGS= −1.5V
VDS= −10V, ID= −2.4A
VDS= −10V
VGS=0V
f=1MHz
VDD −10V
VGS= −4.5V
ID= −1.2A
RL 8.3Ω
RG=10Ω
VDD −10V
VGS= −4.5V
ID= −2.4A
RL 4.2Ω / RG=10Ω
∗Pulsed
<MOSFET> Body diode (source-drain)
Parameter
Symbol
Forward voltage
VSD ∗
Conditions
IS= −2.4A, VGS=0V
∗Pulsed
<Di>
Parameter
Symbol
Min.
Typ.
Max.
Unit
Forward voltage drop
VF
Reverse leakage
IR
−
−
0.37
−
0.41
500
V
µA
www.rohm.com
c 2009 ROHM Co., Ltd. All rights reserved.
○
Conditions
IF= 1.0A
VR=20V
2/5
2009.06 - Rev.A
Data Sheet
TT8U1
zElectrical characteristics curves
5
VGS= -10V
VGS= -4.5V
4
VGS= -2.5V
VGS= -1.8V
3
10
2
VGS= -1.5V
1
4
VGS= -4.5V
3
VGS= -2.5V
VGS= -1.8V
2
0
VGS= -1.5V
VGS= -1.4V
0.6
0.8
1
2
4
8
0
10
1
1.5
DRAIN-SOURCE VOLTAGE : -VDS[V]
GATE-SOURCE VOLTAGE : -VGS[V]
Fig.2 Typical output characteristics(Ⅱ)
Fig.3 Typical Transfer Characteristics
VGS= -1.5V
VGS= -1.8V
VGS= -2.5V
VGS= -4.5V
1000
VGS= -4.5V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(ON)[mΩ]
1000
Ta=25°C
Pulsed
100
10
1
DRAIN-CURRENT : -ID [A]
1
100
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
10
0.1
1
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅱ)
1000
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(ON)[mΩ]
100
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
10
Resistance vs. Drain Current(Ⅲ)
VGS= -1.5V
Pulsed
100
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
10
10
0.1
1
10
DRAIN-CURRENT : -ID [A]
DRAIN-CURRENT : -ID [A]
Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅳ)
Fig.8 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅴ)
www.rohm.com
c 2009 ROHM Co., Ltd. All rights reserved.
○
3/5
10
DRAIN-CURRENT : -ID [A]
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅰ)
1
VGS= -2.5V
Pulsed
DRAIN-CURRENT : -ID [A]
Fig.4 Static Drain-Source On-State
VGS= -1.8V
Pulsed
2
10
0.1
10
FORWARD TRANSFER ADMITTANCE : |Yfs| [S]
0.1
0.1
0.5
DRAIN-SOURCE VOLTAGE : -VDS[V]
10
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(ON)[mΩ]
6
Fig.1 Typical output characteristics(Ⅰ)
100
1000
Ta= 25°C
Ta= - 25°C
0.1
0.001
0
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(ON)[mΩ]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(ON)[mΩ]
1000
0.4
Ta= 125°C
Ta= 75°C
Ta=25°C
Pulsed
0
0.2
1
0.01
1
VGS= -1.4V
0
VDS= -10V
Pulsed
VGS= -10V
DRAIN CURRENT : -ID [A]
Ta=25°C
Pulsed
DRAIN CURRENT : -ID [A]
DRAIN CURRENT : -ID [A]
5
10
VDS= -10V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
1
0.1
0.1
1
10
DRAIN-CURRENT : -ID [A]
Fig.9 Forward Transfer Admittance
vs. Drain Current
2009.06 - Rev.A
Data Sheet
TT8U1
1
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
0.1
200
150
ID = -2.4A
100
ID = -1.2A
50
1
0
1.5
SOURCE-DRAIN VOLTAGE : -VSD [V]
4
CAPACITANCE : C [pF]
GATE-SOURCE VOLTAGE : -VGS [V]
2
4
6
8
10000
3
2
Ta=25°C
VDD = -10V
ID = -2.4A
R G=10Ω
Pulsed
0
10
td(on)
0.01
10
0.1
Ta=25°C
f=1MHz
VGS=0V
Ciss
1
10
DRAIN-CURRENT : -ID [A]
Fig.12 Switching Characteristics
Fig.11 Static Drain-Source On-State
Resistance vs. Gate Source Voltage
Fig.10 Reverse Drain Current
vs. Sourse-Drain Voltage
1
100
GATE-SOURCE VOLTAGE : -VGS[V]
5
R G=10Ω
Pulsed
td (off)
tf
tr
1000
Coss
100
Crss
100
REVERSE CURRENT : IR [mA]
0.5
1000
1
0
0.01
0
Ta=25°C
VDD = -10V
VGS= -4.5V
Ta=25°C
Pulsed
SWITCHING TIME : t [ns]
VGS=0V
Pulsed
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R DS(ON)[mΩ]
REVERSE DRAIN CURRENT : -Is [A]
10000
250
10
pulsed
Ta = 125℃
10
1
Ta = 75℃
0.1
Ta = 25℃
0.01
0.001
Ta= - 25℃
10
0
2
4
6
8
0.01
0.1
1
10
100
0.0001
0
TOTAL GATE CHARGE : Qg [nC]
DRAIN-SOURCE VOLTAGE : -VDS[V]
Fig.13 Dynamic Input Characteristics
Fig.14 Typical Capacitance
vs. Drain-Source Voltage
10
20
30
40
REVERSE VOLTAGE : VR [V]
Fig.15 Reverse Current vs. Reverse Voltage
10000
FORWARD CURRENT : IF[mA]
pulsed
1000
100
Ta = 125℃
Ta = 75℃
Ta= 25℃
10
Ta= - 25℃
1
0.1
0
0.1
0.2
0.3
0.4
0.5
0.6
FORWARD VOLTAGE : VF[V]
Fig.16 Forward Current vs. Forward Voltage
www.rohm.com
c 2009 ROHM Co., Ltd. All rights reserved.
○
4/5
2009.06 - Rev.A
Data Sheet
TT8U1
zMeasurement circuits
Pulse width
ID
VGS
VDS
VGS
10%
50%
RL
D.U.T.
RG
90%
50%
10%
VDD
VDS
10%
90%
td(on)
tr
ton
90%
td(off)
tf
toff
Fig.1-2 Switching Waveforms
Fig.1-1 Switching Time Measurement Circuit
VG
ID
Qg
VDS
VGS
RL
VGS
D.U.T.
IG(Const.)
RG
Qgs
Qgd
VDD
Charge
Fig.2-2 Gate Charge Waveform
Fig.2-1 Gate Charge Measurement Circuit
zNotice
1. SBD has a large reverse leak current compared to other type of diode. Therefore ; it would raise a junction temperature, and
increase a reverse power loss. Further rise of inside temperature would cause a thermal runaway.
This built-in SBD has low VF characteristics and therefore, higher leak current. Please consider enough the surrounding
temperature, generating heat of MOSFET and the reverse current.
2. This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD
protection circuit.
www.rohm.com
c 2009 ROHM Co., Ltd. All rights reserved.
○
5/5
2009.06 - Rev.A
Notice
Notes
No copying or reproduction of this document, in part or in whole, is permitted without the
consent of ROHM Co.,Ltd.
The content specified herein is subject to change for improvement without notice.
The content specified herein is for the purpose of introducing ROHM's products (hereinafter
"Products"). If you wish to use any such Product, please be sure to refer to the specifications,
which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specified in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
information, ROHM shall bear no responsibility for such damage.
The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or
implicitly, any license to use or exercise intellectual property or other rights held by ROHM and
other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the
use of such technical information.
The Products specified in this document are intended to be used with general-use electronic
equipment or devices (such as audio visual equipment, office-automation equipment, communication devices, electronic appliances and amusement devices).
The Products specified in this document are not designed to be radiation tolerant.
While ROHM always makes efforts to enhance the quality and reliability of its Products, a
Product may fail or malfunction for a variety of reasons.
Please be sure to implement in your equipment using the Products safety measures to guard
against the possibility of physical injury, fire or any other damage caused in the event of the
failure of any Product, such as derating, redundancy, fire control and fail-safe designs. ROHM
shall bear no responsibility whatsoever for your use of any Product outside of the prescribed
scope or not in accordance with the instruction manual.
The Products are not designed or manufactured to be used with any equipment, device or
system which requires an extremely high level of reliability the failure or malfunction of which
may result in a direct threat to human life or create a risk of human injury (such as a medical
instrument, transportation equipment, aerospace machinery, nuclear-reactor controller,
fuel-controller or other safety device). ROHM shall bear no responsibility in any way for use of
any of the Products for the above special purposes. If a Product is intended to be used for any
such special purpose, please contact a ROHM sales representative before purchasing.
If you intend to export or ship overseas any Product or technology specified herein that may
be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to
obtain a license or permit under the Law.
Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact us.
ROHM Customer Support System
http://www.rohm.com/contact/
www.rohm.com
© 2009 ROHM Co., Ltd. All rights reserved.
R0039A