Download R5016ANJ

10V Drive Nch MOSFET
R5016ANJ
zStructure
Silicon N-channel MOSFET
zDimensions (Unit : mm)
LPTS
10.1
0.4
0.78
2.7
5.08
(1) Base (Gate)
(1)
(2)
1.2
3.0
1.0
1.24
2.54
(3)
(2) Collector (Drain)
(3) Emitter (Source)
zApplications
Switching
Each lead has same dimensions
zInner circuit
zPackaging specifications
∗1
Package
Taping
TL
Code
Type
1.3
13.1
9.0
zFeatures
1) Low on-resistance.
2) Fast switching speed.
3) Wide SOA (safe operating area).
4) Gate-source voltage (VGSS) guaranteed to be ±30V.
5) Drive circuits can be simple.
6) Parallel use is easy.
4.5
1000
Basic ordering unit (pieces)
R5016ANJ
(1)
(1) Gate
(2) Drain
(3) Source
(2)
(3)
∗1 Body Diode
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Drain-source voltage
VDSS
500
V
Gate-source voltage
VGSS
±30
V
∗3
±16
A
∗1
±64
A
16
A
∗1
64
A
IAS
∗2
8
A
Avalanche Energy
EAS
∗2
Total power dissipation (Tc=25°C)
PD
Continuous
Drain current
Source current
(Body Diode)
ID
Pulsed
IDP
Continuous
IS
Pulsed
Avalanche Current
∗3
ISP
18
mJ
100
W
Channel temperature
Tch
150
°C
Range of storage temperature
Tstg
−55 to +150
°C
∗1 Pw≤10µs, Duty cycle≤1%
∗2 L 500µH, VDD=50V, RG=25Ω, Starting, Tch=25°C
∗3 Limited only by maximum tempterature allowed
zThermal resistance
Symbol
Limits
Unit
Rth(ch-c)
1.25
°C/W
Parameter
Channel to case
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1/5
2009.02 - Rev.A
Data Sheet
R5016ANJ
zElectrical characteristics (Ta=25°C)
Parameter
Symbol
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Min.
Typ.
Max.
Unit
Conditions
IGSS
−
−
±100
nA
VGS=±30V, VDS=0V
V(BR)DSS
500
−
−
V
ID=1mA, VGS=0V
IDSS
−
−
100
µA
VDS=500V, VGS=0V
Gate threshold voltage
VGS(th)
2.5
−
4.5
V
VDS=10V, ID=1mA
Static drain-source on-state resistance
RDS(on) ∗
−
0.21
0.27
Ω
ID=8A, VGS=10V
Forward transfer admittance
| Yfs |
∗
6.0
−
−
S
ID=8A, VDS=10V
Input capacitance
Ciss
−
1800
−
pF
VDS=25V
Output capacitance
Coss
−
750
−
pF
VGS=0V
Reverse transfer capacitance
Crss
−
55
−
pF
f=1MHz
Turn-on delay time
td(on)
∗
−
40
−
ns
ID=8A, VDD 250V
∗
−
50
−
ns
VGS=10V
∗
−
150
−
ns
RL=31.3Ω
∗
−
55
−
ns
RG=10Ω
∗
−
50
−
nC
∗
−
9.5
−
nC
∗
−
21
−
nC
VDD 250V
ID=16A
VGS=10V
RL=15.6Ω / RG=10Ω
tr
Rise time
Turn-off delay time
td(off)
tf
Fall time
Qg
Total gate charge
Gate-source charge
Qgs
Gate-drain charge
Qgd
∗ Pulsed
zBody diode characteristics (Source-drain) (Ta=25°C)
Parameter
Forward voltage
Symbol
VSD ∗
Min.
−
Typ.
−
Max.
1.5
Unit
V
Conditions
IS= 16A, VGS=0V
∗ Pulsed
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2/5
2009.02 - Rev.A
Data Sheet
R5016ANJ
zElectrical characteristics curves
30
PW = 100us
25
PW = 1ms
PW = 10ms
1
DC operation
0.1
Ta = 25°C
Single Pulse
0.1
1
10
100
Ta= 25°C
Pulsed
6.5V
6.0V
20
15
5.5V
Ta= 25°C
Pulsed
10
5.0V
5
7.0V
5.5V
6.5V
5
5.0V
VGS= 4.5V
0
10
20
30
40
50
0
1
2
3
4
5
Fig.1 Maximum Safe Operating Area
Fig.2 Typical Output Characteristics(Ⅰ)
Fig.3 Typical Output Characteristics(Ⅱ)
1.5
3.0
4.5
6.0
5
4
3
2
1
0
-50
GATE-SOURCE VOLTAGE : VGS (V)
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on) (Ω)
0.4
0.3
ID= 16.0A
ID= 8.0A
0.1
0
5
10
15
GATE-SOURCE VOLTAGE : VGS (V)
Fig.7 Static Drain-Source On-State
Resistance vs. Gate Source Voltage
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○
1
50
100
150
VGS= 10V
Pulsed
0.4
ID= 16.0A
0.3
ID= 8.0A
0.2
0.1
0
-50
125°C
75°C
25°C
-25°C
0.1
0.01
0
0.6
0.5
Ta=
Ta=
Ta=
Ta=
VGS= 10V
Pulsed
0.1
0
50
100
150
CHANNEL TEMPERATURE: Tch (°C)
Fig.8 Static Drain-Source On-State
Resistance vs. Channel Temperature
3/5
1
10
100
DRAIN CURRENT : ID (A)
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current
Fig.5 Gate Threshold Voltage
vs. Channel Temperature
0.6
0.5
10
CHANNEL TEMPERATURE: Tch (°C)
Fig.4 Typical Transfer Characteristics
Ta=25°C
Pulsed
VDS= 10V
ID= 1mA
FORWARD TRANSFER ADMITTANCE :
|Yfs| (S)
0.01
6
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on) (Ω)
GATE THRESHOLD VOLTAGE: VGS(th) (V)
0.1
0
10
DRAIN-SOURCE VOLTAGE : VDS ( V )
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= -25°C
0.2
6.0V
8.0V
DRAIN-SOURCE VOLTAGE: VDS (V)
10
0.001
0.0
10V
DRAIN-SOURCE VOLTAGE: VDS (V)
VDS= 10V
Pulsed
1
15
VGS= 4.5V
0
1000
100
DRAIN CURRENT : ID (A)
8.0V
0
0.01
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on) (Ω)
7.0V
DRAIN CURRENT: ID (A)
10
20
10V
Operation in this
area is limited
by RDS(ON)
DRAIN CURRENT: ID (A)
DRAIN CURRENT : ID (A)
100
100
VDS= 10V
Pulsed
10
1
Ta= -25°C
Ta= 25°C
Ta= 75°C
Ta= 125°C
0.1
0.01
0.01
0.1
1
10
100
DRAIN CURRENT : ID (A)
Fig.9 Forward Transfer Admittance
vs. Drain Current
2009.02 - Rev.A
Data Sheet
100
10000
1
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= -25°C
0.1
1000
Coss
100
0.5
1
1
10
100
1000
DRAIN-SOURCE VOLTAGE : VDS (V)
Fig.11 Typical Capacitance vs.
Drain-Source Voltage
Fig.10 Reverse Drain Current vs.
Sourse-Drain Voltage
10000
SWITCHING TIME : t (ns)
1000
100
Ta= 25°C
di / dt= 100A / µs
VGS= 0V
Pulsed
Ta= 25°C
VDD= 250V
ID= 16A
RG= 10Ω
Pulsed
10
5
0
0.1
1.5
SOURCE-DRAIN VOLTAGE : VSD (V)
REVERSE RECOVERY TIME: trr (ns)
Crss
Ta= 25°C
f= 1MHz
VGS= 0V
10
1
0.01
0
0
10
20
30
40
50
60
70
TOTAL GATE CHARGE : Qg (nC)
Fig.12 Dynamic Input Characteristics
Ta= 25°C
VDD= 250V
VGS= 10V
RG= 10Ω
Pulsed
tf
1000
td(off)
100
10
td(on)
tr
1
10
0.1
1
10
0.01
100
REVERSE DRAIN CURRENT : IDR (A)
0.1
1
10
100
DRAIN CURRENT : ID (A)
Fig.13 Reverse Recovery Time
vs.Reverse Drain Current
NORMARIZED TRANSIENT THERMAL
RESISTANCE : r (t)
GATE-SOURCE VOLTAGE : VGS (V)
10
15
Cis
VGS= 0V
Pulsed
CAPACITANCE : C (pF)
REVERSE DRAIN CURRENT : IDR (A)
R5016ANJ
Fig.14 Switching Characteristics
1
Ta = 25°C
Single Pulse : 1Unit
Rth（ch-a）（t） = ｒ（t）×Rth（ch-a）
Rth（ch-a） = 48.9°C/W
0.1
0.01
0.001
0.0001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE WIDTH : Pw(s)
Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width
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c 2009 ROHM Co., Ltd. All rights reserved.
○
4/5
2009.02 - Rev.A
Data Sheet
R5016ANJ
zSwitching characteristics measurement circuit
Fig.1 Switching time measurement circuit
Fig.2 Switching waveforms
IG(Const.)
Fig.3 Gate charge measurement circuit
Fig.5
Fig.4 Gate charge waveform
Avalanche measurement circuit
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c 2009 ROHM Co., Ltd. All rights reserved.
○
Fig.6
5/5
Avalanche waveform
2009.02 - Rev.A
Appendix
Notes
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The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you
wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM
upon request.
Examples of application circuits, circuit constants and any other information contained herein illustrate the
standard usage and operations of the Products. The peripheral conditions must be taken into account
when designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specified in this document. However, should
you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage.
The technical information specified herein is intended only to show the typical functions of and examples
of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to
use or exercise intellectual property or other rights held by ROHM and other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the use of such technical information.
The Products specified in this document are intended to be used with general-use electronic equipment
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The Products are not designed to be radiation tolerant.
While ROHM always makes efforts to enhance the quality and reliability of its Products, a Product may fail or
malfunction for a variety of reasons.
Please be sure to implement in your equipment using the Products safety measures to guard against the
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The Products are not designed or manufactured to be used with any equipment, device or system
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Appendix-Rev4.0