Download RSH070N05

4V Drive Nch MOSFET
RSH070N05
Structure
Silicon N-channel MOSFET
Dimensions (Unit : mm)
SOP8
Features
1) Built-in G-S Protection Diode.
2) Small Surface Mount Package (SOP8).
Application
Power switching, DC / DC converter, Inverter
Each lead has same dimensions
Packaging specifications
Package
(8) (7) (6) (5)
(8)
(7)
(6)
(5)
TB
Code
Type
Inner circuit
Taping
Basic ordering unit (pieces)
2500
∗2
RSH070N05
∗1
(1) (2) (3) (4)
Absolute maximum ratings (Ta=25C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Continuous
Pulsed
Continuous
Pulsed
Total power dissipation
Chanel temperature
Range of Storage temperature
Symbol
VDSS
VGSS
ID
IDP
IS
ISP
PD
Tch
Tstg
*1
*1
*2
Limits
45
20
±7.0
±28
1.6
28
2
150
-55 to +150
Unit
V
V
A
A
A
A
W
o
o
(1)
(2)
(3)
∗1 ESD Protection Diode.
∗2 Body Diode.
(4)
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
Source
Source
Source
Gate
Drain
Drain
Drain
Drain
∗ A protection diode is included between the gate
and the source terminals to protect the diode
against static electricity when the product is in
use.Use a protection circuit when the fixed
voltage are exceeded.
C
C
*1 PW10ｓ, Duty cycle1
*2 Mounted on a ceramic board
Thermal resistance
Parameter
Chanel to ambient
Symbol
Rth(ch-a) *
Limits
62.5
Unit
o
C/W
* Mounted on a ceramic board
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c 2009 ROHM Co., Ltd. All rights reserved.
○
1/4
2009.12 - Rev.A
RSH070N05
Data Sheet
Electrical characteristics (Ta=25C)
Symbol
Min.
Typ.
Max.
Gate-source leakage
IGSS
Drain-source breakdown voltage V(BR) DSS
IDSS
Zero gate voltage drain current
Gate threshold voltage
VGS (th)
Parameter
−
45
−
1.0
−
−
−
6.0
−
−
−
−
−
−
−
−
−
−
−
−
−
−
18
23
25
−
1000
230
125
16
27
57
21
12.0
3.0
4.6
10
−
1
2.5
25
32
35
−
−
−
−
−
−
−
−
16.8
−
−
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
RDS (on)∗
Yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
Qg
Qgs
Qgd
∗
∗
∗
∗
∗
∗
∗
∗
Unit
μA
V
μA
V
mΩ
mΩ
mΩ
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Conditions
VGS=20V, VDS=0V
ID= 1mA, VGS=0V
VDS= 45V, VGS=0V
VDS= 10V, ID= 1mA
ID=7A, VGS= 10V
ID= 7A, VGS= 4.5V
ID= 7A, VGS= 4.0V
VDS= 10V, ID= 7A
VDS= 10V
VGS=0V
f=1MHz
VDD 25V
ID= 3.5A
VGS= 10V
RL=7.1Ω
RG=10Ω
VDD 25V VGS= 5V
ID= 7A
RL=3.6Ω RG=10Ω
∗Pulsed
Body diode characteristics (Source-Drain) (Ta=25C)
Parameter
Forward voltage
Symbol
VSD *
Min.
Typ.
－
－
Max.
1.2
Unit
V
Condition
IS=1.6A/VGS=0V
* pulsed
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c 2009 ROHM Co., Ltd. All rights reserved.
○
2/4
2009.12 - Rev.A
RSH070N05
Data Sheet
Electrical characteristic curves
Ta=125oC
75oC
25oC
-25oC
0.1
0.01
1.0
1.5
2.0
2.5
3.0
100
10
1
0.01
3.5
10
10
0.01
0.1
10
1
10
Drain Current : ID [A]
Fig.3 Static Drain-Source On-State
Resistance vs. Drain Current (2)
10
100
Static Drain-Source On-State
Resistance RDS(on) [m]
Static Drain-Source On-State
Resistance RDS(on) [m]
100
1
Fig.2 Static Drain-Source On-State
Resistance vs. Drain Current (1)
Ta=125oC
75oC
25oC
-25oC
Ta=125oC
75oC
25oC
-25oC
100
Drain Current : ID [A]
Fig.1 Typical Transfer Characteristics
VGS=4V
pulsed
VGS=4.5V
pulsed
1
0.1
Gate-Source Voltage : VGS [V]
1000
Ta=125oC
75oC
25oC
-25oC
VGS=0V
pulsed
Ta=25oC
pulsed
80
Source Current : Is [A]
1
1000
VGS=10V
pulsed
Static Drain-Source On-State
Resistance RDS(on) [m]
1000
VDS=10V
pulsed
Static Drain-Source On-State
Resistance RDS(on) [m]
Drain Current : ID [A]
10
60
ID=7.0A
40
Ta=125oC
75oC
25oC
-25oC
1
0.1
20
ID=3.5A
1
0
0.01
0.1
1
10
0
5
Drain Current : ID [A]
15
0.01
0.0
20
10
100
1000
tf
100
Ta=25oC
9 VDD=25V
8 ID=7A
RG=10
Pulsed
7
td(off)
td(on)
10
tr
Crss
10
Ta=25oC
VDD=25V
VGS=10V
Gate-Source Voltage : VGS[V]
Coss
Switching Time : t [ns]
Ciss
1
0.01
0.1
1
10
Drain-Source Voltage : VDS [V]
Fig.7 Typical capacitance vs.
Source-Drain Voltage
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c 2009 ROHM Co., Ltd. All rights reserved.
○
100
1.5
Fig.6 Source-Current vs.
Source-Drain Voltage
Fig.5 Static Drain-Source
On-State Resistance vs.
Gate-Source Voltage
Ta=25oC
f=1MHz
VGS=0V
1000
1.0
Source-Drain Voltage : VSD [V]
10000
10000
0.5
Gate-Source Voltage : VGS [V]
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current (3)
Capacitance : C [pF]
10
RG=10
Pulsed
6
5
4
3
2
1
0
0.01
0.1
1
Drain Current : ID [A]
Fig.8 Switching Characteristics
3/4
10
0
5
10
15
20
Total Gate Charge : Qg [nC]
Fig.9 Dynamic Input Characteristics
2009.12 - Rev.A
RSH070N05
Data Sheet
Measurement circuits
Pulse Width
VGS
ID
VDS
RL
VDS
D.U.T.
90%
50%
10%
VGS
50%
10%
10%
RG
VDD
90%
td(on)
ton
Fig.10 Switching Time Test Circuit
90%
td(off)
tr
tr
toff
Fig.11 Switching Time Waveforms
VG
VGS
ID
VDS
RL
IG (Const.)
D.U.T.
Qg
VGS
Qgs
RG
Qgd
VDD
Charge
Fig.12 Gate Charge Test Circuit
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c 2009 ROHM Co., Ltd. All rights reserved.
○
Fig.13 Gate Charge Waveform
4/4
2009.12 - Rev.A
Notice
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