Download MDM1200E33D

DUAL DIODE MODULE
Spec.No.SR2-SP-05007R4
P1
MDM1200E33D
FEATURES
 Low noise due to soft and fast recovery diodes.
 High reliability, high durability diodes.
 Isolated heat sink(terminal to base).
ABSOLUTE MAXIMUM RATINGS (TC=25 oC)
Item
Symbol
Unit
MDM1200E33D
Repetitive Peak Reverse Voltage
VRRM
V
3,300
IF
1,200
Forward Current
A
IFM
2,400
o
Junction Temperature
Tj
C
-40 ~ +125
o
Storage Temperature
Tstg
C
-40 ~ +125
Terminals-base
VISO
6,000(AC 1 minute)
Isolation Test
VRMS
Voltage
Terminal 1-Terminal 2
VISO T-T
6,000(AC 1 minute)
Terminals (M8)
15
Screw Torque
N·m
Mounting (M6)
6
Notes: (1) Terminal temperature shall
not
exceed
the
specified
temperature
in
any
operation.
+0
(2) Recommended Value 15 /-3N·m
(3) Recommended Value 5.50.5N·m
DC
1ms
ELECTRICAL CHARECTERISTICS
Item
Repetitive Reverse Current
Forward Voltage Drop
Reverse Recovery Time
Reverse Recovery Loss
Symbol
Unit
Min.
Typ.
Max.
IRRM
VF
trr
Err(10%)
mA
V
s
J/P
2.3
-
3.0
2.8
0.6
1.2
30.0
3.3
1.1
1.9
Symbol
Unit
Min.
Typ.
Max.
Test Conditions
o
VAK=3,300V, Tj=125 C
o
IF=1,200A, Tj=125 C
VCC=1,650V, IF=1,200A, L=100nH
o
Tj=125 C,Rg=3.3Ω (4)
PACKAGE CHARECTERISTICS
Item
Test Conditions
Terminal Resistance
RCE
mΩ
0.3
Terminal Stray Inductance
LsCE
nH
35
Rth(j-c)
K/W
0.017 Junction to case
Thermal Impedance
CTI
600
Comparative tracking index
Contact Thermal Impedance
Rth(c-f)
K/W
0.008
Case to fin per module
Base Plate material
Al-SiC
Insulation substrate material
AlN
Notes:(4) Counter arm; MBN1200E33D VGE=+/-15V
RG value is the test condition’s value for evaluation of the switching times, not recommended value.
Please, determine the suitable RG value after the measurement of switching waveforms
(overshoot voltage, etc.) with appliance mounted.
* Please contact our representatives at order.
* For improvement, specifications are subject to change without notice.
* For actual application, please confirm this spec sheet is the newest revision.
(1)
(2)
(3)
DUAL DIODE MODULE
Spec.No.SR2-SP-05007R4
MDM1200E33D
DEFINITION OF TEST CIRCUIT
Ls
DUT
LLOAD
Vcc
Rg
G/D
MBN1200E33D
Fig.1 Switching test circuit
Ic
Vce
Ls=
VL
t
0
VL
dIc
dｔ t=tL
( )
tL
Fig.2 Definition of stray inductance
Vce
0.1Vce
Irm
0.5Irm
0.1IF
0
t
trr
IF
-Ic
t3
t1
t2 t4
t2
Err(10%)=
∫ IF･Vce dt
t1
t4
Err(Full)=
∫ IF･Vce dt
t3
Fig.3 Definition of switching loss
P2
DUAL DIODE MODULE
Spec.No.SR2-SP-05007R4
P3
MDM1200E33D
STATIC CHARACTERISTICS
TYPICAL
2
0
0
0
2400
2200
2000
Tj=25℃
1
5
0
0
Tj=125℃
Forward Current IF (A)
1800
1600
1
0
0
0
1400
1200
1000
5
0
0
800
600
0
400
0
2
1
3
4
6
5
10
7
9
8
200
0
0
1
2
3
4
5
6
Forward Voltage VF (V)
DYNAMIC CHARACTERISTICS
TYPICAL
TYPICAL
2
02.5
0
0
1.0
Vcc=1650V
L=100nH
Tj=125℃
counter arm;
MBN1200E33D
Vcc=1650V
VGE=+/-15V
RG=3.3ohm
Vcc=1650V
L=100nH
Tj=125℃
counter arm;
MBN1200E33D
Vcc=1650V
VGE=+/-15V
RG=3.3ohm
1
52.0
0
0
Reverse Recovery Loss Err (J)
Reverse Recovery Time trr (us)
0.8
0.6
0.4
0.2
0.0
2
0
0
0
1
5
0
0
Err(full)
1
0
0
0
1
01.5
0
0
Err(10%)
51.0
0
0
5
0
0
0.5
0
0
2
1
3
4
6
5
10
7
9
8
0
0
2
1
0.0
0
200
400
600
800
1000
Forward Current IF (A)
1200
1400
0
200
400
600
800
1000
Forward Current IF (A)
1200
1400
DUAL DIODE MODULE
Spec.No.SR2-SP-05007R4
MDM1200E33D
PACKAGE OUTLINE DRAWING
Weight: 900(g)
C(K)
C(K)
E(A)
E(A)
Circuit diagram
P4
DUAL DIODE MODULE
Spec.No.SR2-SP-05007R4
MDM1200E33D
TRANSIENT THERMAL IMPEDANCE
Thermal Impedance Rth(j-c) (K/W)
0.1
0.01
0.001
0.0001
0.001
0.01
0.1
1
10
Time t(s)
Transient Thermal Impedance Curve
(Maximum Value)
Material declaration
Please note the following materials are contained in the product,
in order to keep characteristic and reliability level.
Material
Contained part
Lead (Pb) and its compounds
Solder
P5
DUAL DIODE MODULE
Spec.No.SR2-SP-05007R4
MDM1200E33D
HITACHI POWER SEMICONDUCTORS
Notices
1. The information given herein, including the specifications and dimensions, is subject to
change without prior notice to improve product characteristics. Before ordering,
purchasers are advised to contact Hitachi sales department for the latest version of this
data sheets.
2. Please be sure to read "Precautions for Safe Use and Notices" in the individual brochure
before use.
3. In cases where extremely high reliability is required (such as use in nuclear power
control, aerospace and aviation, traffic equipment, life-support-related medical
equipment, fuel control equipment and various kinds of safety equipment), safety should
be ensured by using semiconductor devices that feature assured safety or by means of
users’ fail-safe precautions or other arrangement. Or consult Hitachi’s sales department
staff.
4. In no event shall Hitachi be liable for any damages that may result from an accident or
any other cause during operation of the user’s units according to this data sheets. Hitachi
assumes no responsibility for any intellectual property claims or any other problems that
may result from applications of information, products or circuits described in this data
sheets.
5. In no event shall Hitachi be liable for any failure in a semiconductor device or any
secondary damage resulting from use at a value exceeding the absolute maximum rating.
6. No license is granted by this data sheets under any patents or other rights of any third
party or Hitachi Power Semiconductor Device, Ltd.
7. This data sheets may not be reproduced or duplicated, in any form, in whole or in part,
without the expressed written permission of Hitachi Power Semiconductor Device, Ltd.
8. The products (technologies) described in this data sheets are not to be provided to any
party whose purpose in their application will hinder maintenance of international peace
and safety not are they to be applied to that purpose by their direct purchasers or any
third party. When exporting these products (technologies), the necessary procedures are
to be taken in accordance with related laws and regulations.

For inquiries relating to the products, please contact nearest overseas representatives that is located
“Inquiry” portion on the top page of a home page.
Hitachi power semiconductor home page address http://www.hitachi-power-semiconductor-device.co.jp/en/
P6