Download MDM900E17D

DUAL DIODE MODULE
Spec.No.SR2-SP-06009R3
MDM900E17D
FEATURES
∗ Low noise due to soft and fast recovery diodes.
∗ High reliability, high durability diodes.
∗ Isolated heat sink(terminal to base).
o
ABSOLUTE MAXIMUM RATINGS (TC=25 C)
Item
Repetitive Peak Reverse Voltage
Forward Current
Symbol
DC
1ms
Junction Temperature
Storage Temperature
Isolation Test Voltage
Terminals (M8)
Screw Torque
Mounting (M6)
Notes: (1) Recommended Value 15+0/-3N·m
Unit
MDM900E17D
VRRM
V
IF
A
IFM
o
Tj
C
o
Tstg
C
VISO
VRMS
N·m
(2) Recommended Value 5.5±0.5N·m
1,700
900
1,800
-40 ~ +125
-40 ~ +125
4,000(AC 1 minute)
15
(1)
6
(2)
ELECTRICAL CHARECTERISTICS
Item
Symbol
Unit
Min.
Typ.
Max.
Test Conditions
Symbol
Unit
Min.
Typ.
Max.
Test Conditions
RCE
LsCE
Vex
Rth(j-c)
CTI
Rth(c-f)
m
nH
Vrms
K/W
1.3
-
IRRM
mA
1.0
10.0 VAK=1,700V, Tj=125oC
Repetitive Reverse Current
V
1.5
2.0
2.5 IF=900A, Tj=125oC at chip level
VF
Forward Voltage Drop
Reverse Recovery Time
trr
0.7
1.4 VCC=900V, IF=900A, L=180nH
µs
o
(3)
Reverse Recovery Loss
Err(10%)
J/P
0.4
0.7 Tj=125 C, Rg=1.5
Notes:(3) Counter arm: MBN2400E17D VGE=±15V
RG value is the test condition's value to define the switching characteristics not recommended value.
Please, determine the suitable RG value after the measurement of switching waveforms
(overshoot voltage, etc.) with appliance mounted.
PACKAGE CHARECTERISTICS
Item
Terminal Resistance
Terminal Stray Inductance
Partial Discharge Extinction Voltage
Thermal Impedance
Comparative tracking index
Contact Thermal Impedance
K/W
o
0.4
Tc=25 C
35
f=50Hz, Q<10pC
0.045 Junction to case
600
0.008
Case to fin per module
* Please contact our representatives at order.
* For improvement, specifications are subject to change without notice.
* For actual application, please confirm this spec sheet is the newest revision.
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DUAL DIODE MODULE
Spec.No.SR2-SP-06009R3
MDM900E17D
DEFINITION OF TEST CIRCUIT
Ls
DUT
LLOAD
Vcc
Rg
G/D
MBN2400E17D
Fig.1 Switching test circuit
Ic
Vce
Ls=
VL
t
0
VL
dIc
d t=tL
( )
tL
Fig.2 Definition of stray inductance
Vce
0.1Vce
Irm
0.5Irm
0.1IF
0
-Ic
t
trr
IF
t1
t3
t2 t4
t2
Err(10%)=
t1
IF Vce dt
t4
Err(Full)=
t3
IF Vce dt
Fig.3 Definition of switching loss
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DUAL DIODE MODULE
Spec.No.SR2-SP-06009R3
MDM900E17D
CHARACTERISTICS CURVE
STATIC CHARACTERISTICS
1500
1500
1200
Forward Current IF(A)
Forward Current IF(A)
+ *
*,- /0
5/ 23 4
1200
! "#$%
900
600
300
&(' *)
900
+ &(' *)
*,-./0
1/ 23 4
600
300
0
0
0.0
0.5
1.0
1.5
2.0
2.5
Forward Voltage
3.0
3.5
4.0
0.0
0.5
1.0
VF(V)
1.5
2.0
2.5
Forward Voltage
Forward Voltage of diode
3.0
3.5
4.0
VF(V)
Forward Voltage of diode
DYNAMIC CHARACTERISTICS
TYPICAL
1.0
TYPICAL
1.0
Vcc=900V
L=180nH
Tj=125 8
counter arm;
MBN2400E17D
VGE=+/-15V
RG=1.5 9
0.8
Err(full)
0.5
Err(10%)
Reverse Recovery Time trr (us)
Reverse Recovery Loss Err (J)
Vcc=900V
L=180nH
Tj=125 6
counter arm;
MBN2400E17D
VGE=+/-15V
RG=1.5 7
0.6
0.4
0.2
0.0
0
100
200
300
400
500
600
700
800
Forward Current IF (A)
Recovery Loss vs. Forward Current
900
1000
0.0
0
100
200
300
400
500
600
700
800
900
Forward Current IF (A)
Recovery Time vs. Forward Current
1000
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DUAL DIODE MODULE
Spec.No.SR2-SP-06009R3
MDM900E17D
PACKAGE OUTLINE DRAWING
Unit in mm
Weight: 900(g)
C(K)
C(K)
E(A)
E(A)
Circuit diagram
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DUAL DIODE MODULE
Spec.No.SR2-SP-06009R3
MDM900E17D
TRANSIENT THERMAL IMPEDANCE
Maximum
Trannsient thermal impedance Zth(j-c)(K/W)
0.1000
Diode
0.0100
0.0010
0.0001
0.001
0.01
0.1
1
Time : t(s)
Transient Thermal Impedance Curve
10
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DUAL DIODE MODULE
Spec.No.SR2-SP-06009R3
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MDM900E17D
Recovery SOA
TYPICAL
IF=1800A
Vce=1000V
IF=0A
Vce=0V
IF=500A/div
VCE=500V/div
1us
Test Conditions
Tc=125 oC, Vce=1000V, IF=1800A, Ls=180nH, Vge=±15V, Rg=1.5
Vce is measured at power terminals.
Items
Symbols
Units
MDM900E17D
Test Conditions
Prr
kW
650
VCC=1000V, IF=1800A, VGE=±15V,
Tj=125oC, RG=1.5 , L=180nH
Reverse Recovery Capability
(Routine test)
Material declaration
Please note the following materials are contained in the product,
in order to keep characteristic and reliability level.
Material
Contained part
Lead (Pb) and its compounds
Solder
DUAL DIODE MODULE
Spec.No.SR2-SP-06009R3
MDM900E17D
HITACHI POWER SEMICONDUCTORS
Notices
1. The information given herein, including the specifications and dimensions, is subject to
change without prior notice to improve product characteristics. Before ordering,
purchasers are advised to contact Hitachi sales department for the latest version of this
data sheets.
2. Please be sure to read "Precautions for Safe Use and Notices" in the individual brochure
before use.
3. In cases where extremely high reliability is required (such as use in nuclear power
control, aerospace and aviation, traffic equipment, life-support-related medical
equipment, fuel control equipment and various kinds of safety equipment), safety should
be ensured by using semiconductor devices that feature assured safety or by means of
users’ fail-safe precautions or other arrangement. Or consult Hitachi’s sales department
staff.
4. In no event shall Hitachi be liable for any damages that may result from an accident or
any other cause during operation of the user’s units according to this data sheets. Hitachi
assumes no responsibility for any intellectual property claims or any other problems that
may result from applications of information, products or circuits described in this data
sheets.
5. In no event shall Hitachi be liable for any failure in a semiconductor device or any
secondary damage resulting from use at a value exceeding the absolute maximum rating.
6. No license is granted by this data sheets under any patents or other rights of any third
party or Hitachi Power Semiconductor Device, Ltd.
7. This data sheets may not be reproduced or duplicated, in any form, in whole or in part,
without the expressed written permission of Hitachi Power Semiconductor Device, Ltd.
8. The products (technologies) described in this data sheets are not to be provided to any
party whose purpose in their application will hinder maintenance of international peace
and safety not are they to be applied to that purpose by their direct purchasers or any
third party. When exporting these products (technologies), the necessary procedures are
to be taken in accordance with related laws and regulations.

For inquiries relating to the products, please contact nearest overseas representatives that is located
“Inquiry” portion on the top page of a home page.
Hitachi power semiconductor home page address http://www.hitachi-power-semiconductor-device.co.jp/en/
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