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DUAL DIODE MODULE Spec.No.SR2-SP-06009R3 MDM900E17D FEATURES ∗ Low noise due to soft and fast recovery diodes. ∗ High reliability, high durability diodes. ∗ Isolated heat sink(terminal to base). o ABSOLUTE MAXIMUM RATINGS (TC=25 C) Item Repetitive Peak Reverse Voltage Forward Current Symbol DC 1ms Junction Temperature Storage Temperature Isolation Test Voltage Terminals (M8) Screw Torque Mounting (M6) Notes: (1) Recommended Value 15+0/-3N·m Unit MDM900E17D VRRM V IF A IFM o Tj C o Tstg C VISO VRMS N·m (2) Recommended Value 5.5±0.5N·m 1,700 900 1,800 -40 ~ +125 -40 ~ +125 4,000(AC 1 minute) 15 (1) 6 (2) ELECTRICAL CHARECTERISTICS Item Symbol Unit Min. Typ. Max. Test Conditions Symbol Unit Min. Typ. Max. Test Conditions RCE LsCE Vex Rth(j-c) CTI Rth(c-f) m nH Vrms K/W 1.3 - IRRM mA 1.0 10.0 VAK=1,700V, Tj=125oC Repetitive Reverse Current V 1.5 2.0 2.5 IF=900A, Tj=125oC at chip level VF Forward Voltage Drop Reverse Recovery Time trr 0.7 1.4 VCC=900V, IF=900A, L=180nH µs o (3) Reverse Recovery Loss Err(10%) J/P 0.4 0.7 Tj=125 C, Rg=1.5 Notes:(3) Counter arm: MBN2400E17D VGE=±15V RG value is the test condition's value to define the switching characteristics not recommended value. Please, determine the suitable RG value after the measurement of switching waveforms (overshoot voltage, etc.) with appliance mounted. PACKAGE CHARECTERISTICS Item Terminal Resistance Terminal Stray Inductance Partial Discharge Extinction Voltage Thermal Impedance Comparative tracking index Contact Thermal Impedance K/W o 0.4 Tc=25 C 35 f=50Hz, Q<10pC 0.045 Junction to case 600 0.008 Case to fin per module * Please contact our representatives at order. * For improvement, specifications are subject to change without notice. * For actual application, please confirm this spec sheet is the newest revision. P1 DUAL DIODE MODULE Spec.No.SR2-SP-06009R3 MDM900E17D DEFINITION OF TEST CIRCUIT Ls DUT LLOAD Vcc Rg G/D MBN2400E17D Fig.1 Switching test circuit Ic Vce Ls= VL t 0 VL dIc d t=tL ( ) tL Fig.2 Definition of stray inductance Vce 0.1Vce Irm 0.5Irm 0.1IF 0 -Ic t trr IF t1 t3 t2 t4 t2 Err(10%)= t1 IF Vce dt t4 Err(Full)= t3 IF Vce dt Fig.3 Definition of switching loss P2 DUAL DIODE MODULE Spec.No.SR2-SP-06009R3 MDM900E17D CHARACTERISTICS CURVE STATIC CHARACTERISTICS 1500 1500 1200 Forward Current IF(A) Forward Current IF(A) + * *,- /0 5/ 23 4 1200 ! "#$% 900 600 300 &(' *) 900 + &(' *) *,-./0 1/ 23 4 600 300 0 0 0.0 0.5 1.0 1.5 2.0 2.5 Forward Voltage 3.0 3.5 4.0 0.0 0.5 1.0 VF(V) 1.5 2.0 2.5 Forward Voltage Forward Voltage of diode 3.0 3.5 4.0 VF(V) Forward Voltage of diode DYNAMIC CHARACTERISTICS TYPICAL 1.0 TYPICAL 1.0 Vcc=900V L=180nH Tj=125 8 counter arm; MBN2400E17D VGE=+/-15V RG=1.5 9 0.8 Err(full) 0.5 Err(10%) Reverse Recovery Time trr (us) Reverse Recovery Loss Err (J) Vcc=900V L=180nH Tj=125 6 counter arm; MBN2400E17D VGE=+/-15V RG=1.5 7 0.6 0.4 0.2 0.0 0 100 200 300 400 500 600 700 800 Forward Current IF (A) Recovery Loss vs. Forward Current 900 1000 0.0 0 100 200 300 400 500 600 700 800 900 Forward Current IF (A) Recovery Time vs. Forward Current 1000 P3 DUAL DIODE MODULE Spec.No.SR2-SP-06009R3 MDM900E17D PACKAGE OUTLINE DRAWING Unit in mm Weight: 900(g) C(K) C(K) E(A) E(A) Circuit diagram P4 DUAL DIODE MODULE Spec.No.SR2-SP-06009R3 MDM900E17D TRANSIENT THERMAL IMPEDANCE Maximum Trannsient thermal impedance Zth(j-c)(K/W) 0.1000 Diode 0.0100 0.0010 0.0001 0.001 0.01 0.1 1 Time : t(s) Transient Thermal Impedance Curve 10 P5 DUAL DIODE MODULE Spec.No.SR2-SP-06009R3 P6 MDM900E17D Recovery SOA TYPICAL IF=1800A Vce=1000V IF=0A Vce=0V IF=500A/div VCE=500V/div 1us Test Conditions Tc=125 oC, Vce=1000V, IF=1800A, Ls=180nH, Vge=±15V, Rg=1.5 Vce is measured at power terminals. Items Symbols Units MDM900E17D Test Conditions Prr kW 650 VCC=1000V, IF=1800A, VGE=±15V, Tj=125oC, RG=1.5 , L=180nH Reverse Recovery Capability (Routine test) Material declaration Please note the following materials are contained in the product, in order to keep characteristic and reliability level. Material Contained part Lead (Pb) and its compounds Solder DUAL DIODE MODULE Spec.No.SR2-SP-06009R3 MDM900E17D HITACHI POWER SEMICONDUCTORS Notices 1. The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact Hitachi sales department for the latest version of this data sheets. 2. Please be sure to read "Precautions for Safe Use and Notices" in the individual brochure before use. 3. In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, life-support-related medical equipment, fuel control equipment and various kinds of safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement. Or consult Hitachi’s sales department staff. 4. In no event shall Hitachi be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to this data sheets. Hitachi assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in this data sheets. 5. In no event shall Hitachi be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 6. No license is granted by this data sheets under any patents or other rights of any third party or Hitachi Power Semiconductor Device, Ltd. 7. This data sheets may not be reproduced or duplicated, in any form, in whole or in part, without the expressed written permission of Hitachi Power Semiconductor Device, Ltd. 8. The products (technologies) described in this data sheets are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety not are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations. For inquiries relating to the products, please contact nearest overseas representatives that is located “Inquiry” portion on the top page of a home page. Hitachi power semiconductor home page address http://www.hitachi-power-semiconductor-device.co.jp/en/ P7