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Transcript
Nanoscale physics
Spectrum of electron in quantum well with continuous
position-dependent effective mass
J. Seti, М. Ткаch, О. Voitsekhivska
Yuriy Fedkovych Chernivtsi National University, 2, Kotsyubinsky Str., 58012,
Chernivtsi, Ukraine,
E-mail: [email protected]
The rapid development of nanophysics stimulates the theoretical research of
physical processes in multilayered heterostructures which are the elementary basis
of modern nanodevices. For the deep understanding it is necessary do develop the
adequate theory of quasiparticles states in nanoheterostructures in which the
realistic models are to be used, in particular, the continuous position-dependent
effective mass one, which takes into account the imperfect heterointerfaces.
However, due to the mathematical problems arising when the Schrodinger equation
is solved in the majority of papers [1] the simplified model of abrupt effective mass
of quasiparticle at heterostructure interfaces is used.
In the present paper we obtain the electron energy spectrum in
semiconductor quantum well with rectangular potential profile and continuous
linearly-dependent effective mass in near-interface regions of nanoheterostructure
and compare it with the known spectrum in the well known simplified abrupt
model. Therefore, using the exact solutions of Schrodinger equation for
AlхGa1-хAs/GaAs/AlхGa1-хAs heterostructure, we studied the electron energy
spectrum as function of the size of near-interface region and Al concentration (х).
It is shown that the relative difference of energies does not exceed one percent
independently of Al concentration in barrier and well width at physically correct
size of near interface region till two lattice parameters of the respective material. It
is also proven that the properties of electron energy spectrum in GaAs quantum
well embedded into AlхGa1-хAs material-barrier are qualitatively similar at varying
Al concentration (х). However, the difference between the spectra in both moth
models becomes smaller when concentration decreases.
1. Harrison P., Valavanis A. Quantum Wells, Wires and Dots: Theoretical
and Computational Physics of Semiconductor Nanostructures, 4th Edition,
Wiley, 2016.