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Transcript
Third-Order Modulator with 61-dB SNR and
6-MHz Bandwidth Consuming 6 mW
Edoardo Bonizzoni, Aldo Peña Perez, Franco Maloberti
Miguel Garcia-Andrade
Department of Electronics
University of Pavia
Via Ferrata, 1 – 27100 Pavia – ITALY
[edoardo.bonizzoni, aldo.perez, franco.maloberti]@unipv.it
Departamento de Eléctrica y Computación
Universidad Autónoma de Ciudad Juarez
Ciudad Juarez, Chihuahua – MEXICO
[email protected]
Abstract— This low-power sigma-delta modulator targets the
DVB-H requirements and achieves about 10 bit with 6-MHz
signal band and a FoM of 0.59 pJ/conversion. The used
scheme is a multi-bit third order modulator that, with suitable
topological modification, enables using two op-amps and
enjoying a swing reduction at the quantizer input. The area of
the circuit, fabricated with a 0.18-μm analog CMOS
technology, is 0.32 m2. The nominal supply voltage is 1.8 V
and the clock frequency is 96 MHz (OSR = 8). Experimental
measurements confirm the behavioral study made accounting
for the op-amps limitations.
low as 6.18 mW with 1.8-V supply voltage, resulting in a
remarkable FoM of 0.59 pJ/conversion.
I.
In order to reduce the power consumption it is necessary
to identify power hungry components and to limit their
power request and, possibly, their number. Since the power
of an op-amp increases in a quadratic way with its
bandwidth, it is mandatory to keep at the minimum the
clock frequency and, accordingly, the OSR. However, with
low OSR, it is necessary to use high-order modulators, that
means more op-amps, or to augment the resolution in the
quantizer, that means more comparators. The trade-off
depends on the power required by the single blocks. For this
reason, we made preliminary transistor level simulations
with the used technology. We obtained that an op-amp with
600-MHz bandwidth, 300-V/s slew-rate, and 60 dB of
gain consumes 2.3 mW, and a comparator with 5-mV
sensitivity clocked at 100 MHz consumes about 60 W.
The numerical result provides the architecture
recommendation: use the maximum number of bit in the
quantizer and the lowest OSR.
INTRODUCTION
Sigma-delta modulators are more and more used for
portable telecom applications. Well-known advantages are:
minimum requests of analog accuracy, good figure of merit
(FoM) and medium-high resolution with a relatively low
oversampling ratio (OSR). According to this trend it is
expected that the challenging band (4-8 MHz) and power
consumption (less than 10 mW) requirements for digital
video broadcast for handhelds (DVB-H), [1], can be
satisfied with power optimized solutions.
This paper uses a third order architecture with a
5-bit quantizer, [2]. Therefore, if the expected resolution is
10 bit, an OSR as low as 8 can be used, as it grants an extra
42-dB SNR. The circuit does not use any DEM because the
expected linearity of the resistor-based DACs is sufficient.
The key characteristics of the circuit to reduce the power
consumption is the use of only two op-amps, [3], and just 18
voltage comparators instead of 31 in the flash while
ensuring an overall 5-bit accuracy.
A. Reduction of the number of op-amps.
Fig. 1 shows the chosen basic sigma-delta scheme, [2].
It is a third order modulator with a cascade of three
integrators without delay. The coefficients that makes the
noise transfer function (NTF) equal to (1 – z-1)3 are shown
in the diagram.
Integrator
g
1
The proposed third-order sigma-delta modulator has
been integrated by using a 0.18-m analog CMOS
technology. Experimental results show 9.8 bit of accuracy at
96-MHz clock (6-MHz signal bandwidth). The resolution
slightly increases at lower clock and equal SNR because of
the reduced spur noise injected by the DAC, especially the
one on the second stage. The total power consumption is as
978-1-4244-2361-3/08/$25.00 ©2008 IEEE.
LOW POWER STRATEGIES
II.
In
+
Σ
_
1
1
1-z -1
+
+
Integrator
2
g
Σ
_
1
1
1-z -1
Integrator
3
g
+
Σ
_
1
1
1-z -1
5-bit
Out
z -1
Fig. 1 – Third order sigma-delta modulator with 5-bit quantizer.
218
Fig. 3, which, indeed, foresees the quantization of
(VO(n) - VO,Q(n – 1)), where VO,Q(n – 1) is the result of the
previous quantization. The z-1 term after the quantizer
represents a full clock delay. However, in the real
implementation it is divided in two half delays, one used in
the flash and the other in the previous block in the
modulator.
Since a large output swing of an op-amp demands for
high slew-rate, it is worth using a feed-forward path, as
shown in Fig. 1, that limits the swing of the first op-amp to
almost the quantization noise.
Integrator
g
1
A
In
+
1
1-z -1
Σ
_
+
+
Integrator
2
g
B
1
1-z -1
Σ
_
Integrator
3
g
C
+
1
1-z -1
Σ
_
5-bit
In
Moving this point
z
-1
+
Σ
x
Quantizer
z -1
Σ
+
_
+
z -1
(a)
Integrator
g
1
In
+
Σ
_
1
1-z -1
Block D
+
+
Fig. 3 – 5-bit quantizer with reduced input range.
Double Integrator
g
5-bit
1
2
(1-z -1)
Σ
_
Out
Integrator
g
1
In
2-z -1
z
+
Σ
_
1
1-z -1
-1
+
+
Double Integrator
1
2
(1-z -1)
Σ
_
2-z -1
(b)
Σ
+
x
5-bit
z -1
+
_
Σ
+
z -1
Also can be moved
Fig. 4 – Modulator with reduced input range quantizer.
Double Integrator
1
= In
2
(1-z -1)
Out
+
_
Σ
+
1
1-z -1
The use of the scheme of Fig. 3 into the modulator gives
the diagram of Fig. 4. Since the subtraction at the input of
the quantizer would require an additional active block, that
branch is moved back multiplied by (1 – z-1)2. The result is
that the feedback signal at the input of the block referred to
as Double Integrator becomes
Out
Ppath
z -1
Qpath
z -2
(c)
(2 z 1) (1 z 1) 2 = 3(1 z 1) z 2
Fig. 2 – Topological transformations.
(1)
leading to the block diagram of Fig. 5.
Starting from the basic architecture we performed a
number of topological transformations to eliminate one
op-amp. As shown in Fig. 2(a), the feedback at the input of
the third op-amp is moved at the input of the second one
multiplied by (1 – z-1). Therefore, the transfer function of
the second block becomes 1/(1 – z-1)2 and its feedback turns
out to be equal to –1 – 1 + z-1 = –(2 – z-1) (Fig. 2(b)). The
double integrator of Fig. 2(b) can be realized with a scheme
similar to the one proposed in [3] without the
double-sampling. Namely, the sampled-data implementation
of the diagram of Fig. 2(c) requires an extra analog delay to
achieve the z-2 term (referred to as Qpath). This is done by a
pair of capacitors operated at half the clock frequency.
Double Integrator
Integrator
g
1
In
+
Σ
_
1
1-z -1
+
+
Σ
_
_
z -2
1
2
(1-z -1)
5-bit
z -1
+
Σ
+
3
Out
z -1
Digitallyy Implemen
Implemented
Fig. 5 – Proposed modulator architecture.
The reduction of the swing at the input of the flash
determines two benefits: the slew-rate of the second op-amp
is relaxed and the number of comparators decreases from 31
to 18 for 5-bit quantization.
B. Reduction of the number of comparators.
The power required by the quantizer is mainly due to the
flash. Indeed, the power of the DAC is negligible because it
is mainly given by the generator of the quantized voltages.
The cost that must be paid is due to the coefficient 3 in
the block diagram depicted in Fig. 5 that imposes a non
favorable feedback factor. This requires a more demanding
bandwidth and slew-rate in the op-amp. The problem can be
possibly limited by using an attenuation factor in the Double
Integrator block that is compensated for with a
corresponding reduction in the flash quantization interval.
The possible need of a higher gain in the comparators is
likely demanding a smaller increase of power than the one
The technique used to reduce the number of comparators
in the flash starts by observing that for many bit and a given
OSR, there is a good correlation between two successive
flash inputs. Therefore, it is more convenient to quantize
(VO(n) – VO(n – 1)) than VO(n). This leads to the scheme of
219
A 5-bit DAC made by an array of capacitors would
require using 32 unity elements whose value should be too
small to ensure the required matching performance. For this
reason, the DACs have been realized by using a resistive
divider with 32 equal resistances of 200 . Moreover, in
order to avoid interferences and reduce the digital
processing, the input of the Double Integrator uses two
DACs. The used solution implies some additional power
consumption, that is, however, about the 15% of the total.
needed by the op-amp. A study of the problem at the
transistor level showed an expected but limited benefit so
that, to ensure a more robust solution, we opted for the
original approach.
III. CIRCUIT IMPLEMENTATION
The two op-amps used to implement blocks Integrator 1
and Double Integrator have the same scheme but use
different bias currents as requested by the slew-rate and
bandwidth: they are fully-differential folded cascode
amplifiers with switched capacitor common mode feedback.
The input capacitor in the first integrator is 80 fF and the
feedback capacitors in the Double Integrator is 40 fF. The
op-amps key features are summarized in Table 1.
Fig. 6 shows the schematic diagram of the voltage
comparators used in the sigma-delta modulator. It is a
two-stage fully differential scheme. The first stage (top of
the Fig. 6) is a preamplifier with a gain of 9.3 dB and
continuous time common mode feedback. The second stage
(bottom of Fig. 6) is the regenerative latch. Simulation
results show a response time of about 2 ns after the signal
clock () triggering. The bias current of the preamplifier is
25 A.
OP-AMPS PERFORMANCE
TABLE I.
Feature
First op-amp
Second op-amp
Supply voltage
1.8 V
1.8 V
Bandwidth
580 MHz
890 MHz
Slew-rate
300 V/μs
400 V/μs
Gain
51 dB
48 dB
Power consumption
1.9 mW
2.4 mW
VDD
OA+
OA-
560n/180n
OA+
Vbias
2μ/180n
OA-
560n/180n
Vbias
2μ/180n
OA+
OA-
Vin+
1μ/180n
Vpol
Vref+
Vref-
4μ/180n
Vin-
1μ/180n
Fig. 7 – Chip microphotograph.
Vpol
4μ/180n
IV.
VSS
The proposed third order sigma-delta modulator has
been integrated by using a 0.18-m, double poly, 5 metal
levels CMOS technology. The die, whose microphotograph
is shown in Fig. 7, has an active area equal to 0.32 m2. The
reference voltages are external to the circuit; no internal
buffer is used to enforce the strength of the references. To
limit the effects of parasitic inductances due to the bonding,
a 40-pins LLP package has been used. The nominal supply
voltage is 1.8 V.
VDD
Out+
560n/180n
θ
1μ/180n
1μ/180n
OA-
Out-
560n/180n
1μ/180n
θ
1μ/180n
2μ/180n
2μ/180n
MEASUREMENT RESULTS
The proposed modulator has been measured for different
sampling frequencies, fs. At 96-MHz clock, the measured
spectrum is given in Fig. 8. Considering an OSR = 8, the
signal bandwidth is 6 MHz and the achieved SNDR is
60.7 dB, corresponding to 9.8 bit. The spectrum shows a
second and a third harmonic whose amplitudes are -88 and
-77 dBFS, respectively. The second harmonic tone is likely
due to a small mismatch in the input differential signal.
OA+
VSS
Fig. 6 – Schematic diagram of the used voltage comparator:
preamplifier (top) and latch (bottom).
220
gives rise to a white spectrum while a white noise injected
at the input of the second integrator causes a first order
shaped component. This contribution, because of the 3 and
the z-2 terms and because of the layout of the DACs, is
dominant. Its effect is visible in the spectrum of Fig. 8 as it
hits the corner of the signal band.
The total measured power with 96-MHz clock is
6.18 mW.
Therefore,
the
achieved
FoM
is
0.59 pJ/conversion, value that is remarkable if we consider
the wide band of the input signal. Table 2 summarizes the
performance of the modulator.
PERFORMANCE SUMMARY
TABLE II.
Fig. 8 – Measured output spectrum
(FFT with 65536 points; dashed line: -60 dB/dec slope).
75
70
65
SNR [dB]
60
Ideal Response
Simulation Result
Measurement Results:
Fs=32MHz @ OSR=8
Fs=64MHz @ OSR=8
Fs=96MHz @ OSR=8
96 MHz
Supply voltage
1.8 V
Full scale input signal
600 mV p.p.
Signal bandwidth
6 MHz
Peak SNDR
60.7 dB
Active area
0.32 m2
Power consumption
6.18 mW
FoM
0.59 pJ/conversion
V.
CONCLUSIONS
In this paper a low-power third order sigma-delta
modulator has been presented. The proposed circuit uses
only two op-amps and a reduced number of voltage
comparators in the quantizer (18 to achieve 5 bit of
resolution). Measurement results show 60.7-dB peak SNDR
considering 96-MHz clock and a signal bandwidth of
6 MHz. The total measured power consumption is equal to
6.18 mW. This leads to a FoM of 0.59 pJ/conversion.
55
50
45
40
35
30
−40
Sampling frequency
ACKNOWLEDGMENTS
−35
−30
−25
−20
−15
−10
−5
The authors would like to thank Ivano Galdi for his
valuable contribution to this work, National Semiconductor
Corporation for chip fabrication, FIRB, Italian National
Program #RBAP06L4S5, and CONACyT Mexico project
#J45732-Y for partial economical support.
0
Input Amplitude [dB]
Fig. 9 – SNR versus input signal amplitude.
Fig. 9 compares the measured SNR versus input
amplitude for different conditions. The dashed and the solid
lines are the ideal and the behavioral simulation results,
respectively. For the behavioral study, the used model
foresees the real limit caused by the gain, bandwidth and
slew-rate of the op-amps given in Table 1, [4]. The
experimental data show that when the clock frequency is
reduced to 64 MHz and 32 MHz (bandwidth equal to
4 MHz and 2 MHz, respectively), the SNR improves by
approximately 3 and 6 dB. The reason of the SNR
degradation is ascribed to the noise affecting the DAC
signals. Since the circuit does not use internal buffers, the
DAC voltage experiences a ringing that settles well within
the clock period at fs = 32 MHz, but has some residual for
fs = 64 MHz and 96 MHz. Computer simulations show that
a white noise injected at the input of the first integrator
REFERENCES
[1]
[2]
[3]
[4]
221
M. Kornfeld and G. May, “DVB-H and IP Datacast – Broadcast to
Handheld Devices”, IEEE Trans. on Broadcasting, vol. 53, no. 1, pp.
161-170, March 2007.
S.R. Norsworthy, R. Schreier, and G.C. Temes, “Delta-Sigma Data
Converters”, IEEE Press, 1996.
J. Koh, Y. Choi, and G. Gomez, “A 66dB DR 1.2V 1.2mW SingleAmplifier Double-Sampling 2nd-order DS ADC for WCDMA in
90nm CMOS”, IEEE International Solid-State Circuits Conference
Dig. Tech. Pap., pp. 170-171, Feb. 2005.
P. Malcovati, S. Brigati, F. Francesconi, F. Maloberti, P. Cusinato,
and A. Baschirotto, “Behavioral Modeling of Switched-Capacitor
Sigma-Delta Modulators”, IEEE Trans. on Circuits and Systems – I:
Fundamental Theory and Applications, vol. 50, no. 3, pp. 352-364,
March 2003.