SOT-23 Plastic-Encapsulate Transistors CJ3420
... RDS(on).This device is suitable for use as a uni-directional or bi-directional ...
... RDS(on).This device is suitable for use as a uni-directional or bi-directional ...
Characteristic Curves
... • When VCE > 0.7V, BC become reverse-bias and transistor goes into active or linear region. IC remain constant for a given value of IB as VCE continue increase. Actually IC increase (IC = β IB) slightly as VCE increase due to widen BC depletion region, because few hole for recombination, so β increa ...
... • When VCE > 0.7V, BC become reverse-bias and transistor goes into active or linear region. IC remain constant for a given value of IB as VCE continue increase. Actually IC increase (IC = β IB) slightly as VCE increase due to widen BC depletion region, because few hole for recombination, so β increa ...
NCL30051LEDGEVB 35-50 Volt, Up to 1.5 Amp, Offline Power Factor
... significantly reduce maintenance costs given the LEDs long operating lifetime. This specific driver design is tailored to support LEDs such as the Cree XLAMPt XP−G and XM−L, and OSRAM Golden DRAGON® Plus that have maximum drive currents of at least 1000 mA. These LEDs exhibit good efficacies at high ...
... significantly reduce maintenance costs given the LEDs long operating lifetime. This specific driver design is tailored to support LEDs such as the Cree XLAMPt XP−G and XM−L, and OSRAM Golden DRAGON® Plus that have maximum drive currents of at least 1000 mA. These LEDs exhibit good efficacies at high ...
Synchronous rectification boosts efficiency by reducing power loss
... MOSFETs. The nonsynchronous design uses the TPS40210 nonsynchronous boost controller and a CSD17505Q5A low-side switch, with specifications similar to those of the power block. This design has a Schottky diode for the rectifier that is rated for at least 15 V and 7 A. The smallest package size avail ...
... MOSFETs. The nonsynchronous design uses the TPS40210 nonsynchronous boost controller and a CSD17505Q5A low-side switch, with specifications similar to those of the power block. This design has a Schottky diode for the rectifier that is rated for at least 15 V and 7 A. The smallest package size avail ...
Forward Type Switched Mode Power Supply
... voltage fluctuation and continues to give the required quality of output voltage. The non-ideality of the transformer, however, cannot simply be overcome by changing the circuit parameters of the simplified circuit shown in Fig. 23.1. A practical transformer will have finite magnetization current an ...
... voltage fluctuation and continues to give the required quality of output voltage. The non-ideality of the transformer, however, cannot simply be overcome by changing the circuit parameters of the simplified circuit shown in Fig. 23.1. A practical transformer will have finite magnetization current an ...
DPLS350E Features Mechanical Data
... Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use o ...
... Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use o ...
AP6508 500kHz 21V 3A SYNCHRONOUS DC/DC BUCK CONVERTER Description
... 2. Stresses greater than the 'Absolute Maximum Ratings' specified above, may cause permanent damage to the device. These are stress ratings only; functional operation of the device at these or any other conditions exceeding those indicated in this specification is not implied. Device reliability may ...
... 2. Stresses greater than the 'Absolute Maximum Ratings' specified above, may cause permanent damage to the device. These are stress ratings only; functional operation of the device at these or any other conditions exceeding those indicated in this specification is not implied. Device reliability may ...
High Resistance Measurements
... both the surface and volume resistance of the material. The DC voltage is applied for a specified period of time before the resulting current is measured. This test procedure is described in detail in the American Society for Testing Materials method D257 titled, “DC Resistance or Conductance of Ins ...
... both the surface and volume resistance of the material. The DC voltage is applied for a specified period of time before the resulting current is measured. This test procedure is described in detail in the American Society for Testing Materials method D257 titled, “DC Resistance or Conductance of Ins ...
AN9506: A 50W, 500kHz, Full-Bridge, Phase-Shift, ZVS
... Many articles and papers have been published recently promoting the performance and benefits of the Phase-Shift, Full-Bridge Topology and rightly so. This topology productively utilizes the same elements that have been plaguing power supply designers for decades, those infamous parasitic components. ...
... Many articles and papers have been published recently promoting the performance and benefits of the Phase-Shift, Full-Bridge Topology and rightly so. This topology productively utilizes the same elements that have been plaguing power supply designers for decades, those infamous parasitic components. ...
Fabrication of Metallic Electrodes with Nanometer
... of current. For the characterization of the breaking process, the voltage drop across a nanowire was monitored in a fourprobe configuration. Figure 2(a) shows a representative conductance trace during the breaking process. The conductance of a typical nanowire is on the order of 10 mS before the pas ...
... of current. For the characterization of the breaking process, the voltage drop across a nanowire was monitored in a fourprobe configuration. Figure 2(a) shows a representative conductance trace during the breaking process. The conductance of a typical nanowire is on the order of 10 mS before the pas ...
Rev_Jun15_2016_Neil_.. - TerpConnect
... • High-k dielectrics more trap-rich, degrading device performance • Gate voltage stresses cause trap generation • Soft breakdown: weak conduction through single-trap path • Progressive breakdown: trap assisted tunneling • Hard breakdown: critical trap concentration and/or critical electric field • L ...
... • High-k dielectrics more trap-rich, degrading device performance • Gate voltage stresses cause trap generation • Soft breakdown: weak conduction through single-trap path • Progressive breakdown: trap assisted tunneling • Hard breakdown: critical trap concentration and/or critical electric field • L ...
NCV890204 2.0 A, 2 MHz Automotive Buck Switching Regulator with Programmable Spread
... suitable for systems with low noise and small form factor requirements often encountered in automotive driver information systems. The NCV890204 is capable of converting the typical 4.5 V to 18 V automotive input voltage range to outputs as low as 3.3 V at a constant switching frequency above the se ...
... suitable for systems with low noise and small form factor requirements often encountered in automotive driver information systems. The NCV890204 is capable of converting the typical 4.5 V to 18 V automotive input voltage range to outputs as low as 3.3 V at a constant switching frequency above the se ...
HGTG10N120BND 35A, 1200V, NPT Series N
... Operating frequency information for a typical device (Figure 3) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 5, 6, 7, 8, 9 and 11. ...
... Operating frequency information for a typical device (Figure 3) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 5, 6, 7, 8, 9 and 11. ...
op-amp parameters
... The common-mode rejection ratio (CMRR), as discussed in conjunction with the diff-amp, is a measure of an op-amp's ability to reject common-mode signals. An infinite value of CMRR means that the output is zero when the same signal is applied to both inputs (common-mode), An infinite CMRR is never ac ...
... The common-mode rejection ratio (CMRR), as discussed in conjunction with the diff-amp, is a measure of an op-amp's ability to reject common-mode signals. An infinite value of CMRR means that the output is zero when the same signal is applied to both inputs (common-mode), An infinite CMRR is never ac ...
Features Mechanical Data
... Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: ...
... Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: ...
MAX1561/MAX1599 High-Efficiency, 26V Step-Up Converters for Two to Six White LEDs General Description
... The MAX1561/MAX1599 enter shutdown when VCTRL is less than 100mV for more than 8.2ms (16.4ms for the MAX1599). In shutdown, supply current is reduced to 0.3µA by powering down the entire IC except for the CTRL voltage-detection circuitry. CCOMP is discharged during shutdown, allowing the device to r ...
... The MAX1561/MAX1599 enter shutdown when VCTRL is less than 100mV for more than 8.2ms (16.4ms for the MAX1599). In shutdown, supply current is reduced to 0.3µA by powering down the entire IC except for the CTRL voltage-detection circuitry. CCOMP is discharged during shutdown, allowing the device to r ...
Si3N4/AlGaN/GaN-Metal-Insulator-Semiconductor Heterostructure
... rier density of n s ⬇5⫻1012 cm⫺2 . The threshold voltage for MISHFET as a function of the temperature. It increases from MISHFET, MOSHFET, and HFET devices can be simply about 90 pA/mm at room temperature to 1000 pA/mm at estimated from the gate–channel capacitance.7 For the 300 °C thereby still rem ...
... rier density of n s ⬇5⫻1012 cm⫺2 . The threshold voltage for MISHFET as a function of the temperature. It increases from MISHFET, MOSHFET, and HFET devices can be simply about 90 pA/mm at room temperature to 1000 pA/mm at estimated from the gate–channel capacitance.7 For the 300 °C thereby still rem ...
Tunable supercurrent in superconductor/normal metal
... now given by the superposition of the Fermi–Dirac distributions of the reservoirs. This results, at sufficiently low temperatures kT eV, in a position-dependent double-step function, as shown in Fig. 5. The energy separation between the steps is eV. As predicted recently [9, 11], such an energy di ...
... now given by the superposition of the Fermi–Dirac distributions of the reservoirs. This results, at sufficiently low temperatures kT eV, in a position-dependent double-step function, as shown in Fig. 5. The energy separation between the steps is eV. As predicted recently [9, 11], such an energy di ...
P–n diode
This article provides a more detailed explanation of p–n diode behavior than that found in the articles p–n junction or diode.A p–n diode is a type of semiconductor diode based upon the p–n junction. The diode conducts current in only one direction, and it is made by joining a p-type semiconducting layer to an n-type semiconducting layer. Semiconductor diodes have multiple uses including rectification of alternating current to direct current, detection of radio signals, emitting light and detecting light.