Nanoscale COMMUNICATION - Nanyang Technological University
... g are the energy gaps of CdS (2.44 eV), CdSe (1.72 eV) and their alloy, respectively, and b is an optical bowing parameter. The best fit yields b ¼ 0.54 eV in our experiment, which is consistent with earlier reports.5 With the x values increasing from 0 to 1, the real color of the sample along the l ...
... g are the energy gaps of CdS (2.44 eV), CdSe (1.72 eV) and their alloy, respectively, and b is an optical bowing parameter. The best fit yields b ¼ 0.54 eV in our experiment, which is consistent with earlier reports.5 With the x values increasing from 0 to 1, the real color of the sample along the l ...
datasheet search site | www.alldatasheet.com
... The information provided herein is believed to be reliable; however, BURR-BROWN assumes no responsibility for inaccuracies or omissions. BURR-BROWN assumes no responsibility for the use of this information, and all use of such information shall be entirely at the user’s own risk. Prices and specific ...
... The information provided herein is believed to be reliable; however, BURR-BROWN assumes no responsibility for inaccuracies or omissions. BURR-BROWN assumes no responsibility for the use of this information, and all use of such information shall be entirely at the user’s own risk. Prices and specific ...
dc voltage measurements
... DO NOT measure voltage if the voltage on the "COM" input jack exceeds 1000V above earth ground. 4. NEVER connect the meter leads across a voltage source while the function switch is in the current, resistance, or diode mode. Doing so can damage the meter. 5. ALWAYS discharge filter capacitors in pow ...
... DO NOT measure voltage if the voltage on the "COM" input jack exceeds 1000V above earth ground. 4. NEVER connect the meter leads across a voltage source while the function switch is in the current, resistance, or diode mode. Doing so can damage the meter. 5. ALWAYS discharge filter capacitors in pow ...
Gauss`s Law - KCSE Online
... construction simply involves insulating two conductors from each other. Storing electric energy in the device, involves transferring charge from one conductor to the other such that one has a negative charge while the other has an equal amount of positive charge. Work must be done to move the charge ...
... construction simply involves insulating two conductors from each other. Storing electric energy in the device, involves transferring charge from one conductor to the other such that one has a negative charge while the other has an equal amount of positive charge. Work must be done to move the charge ...
A compact, high voltage 25kW, 50 kHz DC
... rating of 5 A. These JFETs offer on resistances in the area of 0.36 Ω . . . 0.40 Ω. In case of 1.2kV devices the cascade must be extended by one more SiC-JFET in order to increase the blocking voltage capability of the switch. On the secondary side a three level topology has been chosen so that fast ...
... rating of 5 A. These JFETs offer on resistances in the area of 0.36 Ω . . . 0.40 Ω. In case of 1.2kV devices the cascade must be extended by one more SiC-JFET in order to increase the blocking voltage capability of the switch. On the secondary side a three level topology has been chosen so that fast ...
AN-6300 - Fairchild
... discharge time of the VDD capacitor. In Figure 8, the twostep UVLO mechanism decreases the operating current and pulls the VDD voltage toward the VDD-OFF. This sinking current is disabled after the VDD drops below VDD-OFF. The VDD voltage is again charged towards VDD-ON. With the addition of the two ...
... discharge time of the VDD capacitor. In Figure 8, the twostep UVLO mechanism decreases the operating current and pulls the VDD voltage toward the VDD-OFF. This sinking current is disabled after the VDD drops below VDD-OFF. The VDD voltage is again charged towards VDD-ON. With the addition of the two ...
FSFA2100 — Fairchild Power Switch (FPS™) for Half-Bridge PWM Converters
... blocked and the OLP current source starts to charge CB slowly, as shown in Figure 23. In this condition, VFB continues increasing until it reaches 7V, then the switching operation is terminated, as shown in Figure 23. The delay time for shutdown is the time required to charge CB from 3V to 7V with 5 ...
... blocked and the OLP current source starts to charge CB slowly, as shown in Figure 23. In this condition, VFB continues increasing until it reaches 7V, then the switching operation is terminated, as shown in Figure 23. The delay time for shutdown is the time required to charge CB from 3V to 7V with 5 ...
ZXCT1012 REDUCED HEIGHT MICRO-POWER CURRENT MONITOR Description
... For best performance RSENSE should be connected as close to the SENSE+ (and SENSE-) pins; which minimizes any series resistance with RSENSE and potential for interference pickup. When choosing appropriate values for RSENSE a compromise must be reached between in-line signal loss (including potential ...
... For best performance RSENSE should be connected as close to the SENSE+ (and SENSE-) pins; which minimizes any series resistance with RSENSE and potential for interference pickup. When choosing appropriate values for RSENSE a compromise must be reached between in-line signal loss (including potential ...
This data sheet is a compendium of facts and recommendations on
... The porous spacer and both plates serve to thicken a single layer, but the important distance is the dielectric thickness, which is, of course, extremely small. Thus, electrolytics enjoy a huge capacitance density advantage over other capacitor technologies. One limitation to this technology is its ...
... The porous spacer and both plates serve to thicken a single layer, but the important distance is the dielectric thickness, which is, of course, extremely small. Thus, electrolytics enjoy a huge capacitance density advantage over other capacitor technologies. One limitation to this technology is its ...
FSA1208 Low-Power, Eight-Port, High-Speed Isolation Switch FSA1208 — Low-Power, Eight-Port, Features
... switch. This part is configured as a single-pole, singlethrow switch and is optimized for isolating a high-speed source, such as a DDR memory bus. The FSA1208 features an extremely low on capacitance (CON) of 6pF. Superior channel-to-channel crosstalk minimizes interference. ...
... switch. This part is configured as a single-pole, singlethrow switch and is optimized for isolating a high-speed source, such as a DDR memory bus. The FSA1208 features an extremely low on capacitance (CON) of 6pF. Superior channel-to-channel crosstalk minimizes interference. ...
AP8801 500mA LED STEP-DOWN CONVERTER Description
... SUPPLY VOLTAGE (V) Figure. 16 Minimum Recommended Inductor with 500mA LED Current ...
... SUPPLY VOLTAGE (V) Figure. 16 Minimum Recommended Inductor with 500mA LED Current ...
AN1541/D Introduction to Insulated Gate Bipolar Transistors
... centers are formed by placing an N+ buffer layer between the n− epi and P+ substrate. While the N+ buffer layer may speed up the recombination, it also increases the forward drop of the device. Hence the tradeoff between switching speed and conduction loss becomes a factor in optimizing device perfo ...
... centers are formed by placing an N+ buffer layer between the n− epi and P+ substrate. While the N+ buffer layer may speed up the recombination, it also increases the forward drop of the device. Hence the tradeoff between switching speed and conduction loss becomes a factor in optimizing device perfo ...
Description Features Absolute Maximum Ratings Recommended
... pulls the input to the driver stage negative, reverse biasing the driver PIN diode to ensure full turn-off. A relatively large negative bias is important to reduce junction capacitance in D6 and increase the off-state diode impedance. In contrast, when one or more gate inputs are in the HIGH state, ...
... pulls the input to the driver stage negative, reverse biasing the driver PIN diode to ensure full turn-off. A relatively large negative bias is important to reduce junction capacitance in D6 and increase the off-state diode impedance. In contrast, when one or more gate inputs are in the HIGH state, ...
Electrostatic Microgenerators
... A third mode of operation exists when the variable capacitor is continuously connected to the load circuitry, and this load circuitry provides the capacitor with a polarisation voltage. A simple example of this is a voltage source, a resistor and a variable capacitor wired in serie ...
... A third mode of operation exists when the variable capacitor is continuously connected to the load circuitry, and this load circuitry provides the capacitor with a polarisation voltage. A simple example of this is a voltage source, a resistor and a variable capacitor wired in serie ...
Multilevel Inverters for Large Automotive Electric
... wave decreases until it reaches zero with an infinite number of levels. As the number of levels increases, the higher the voltage which can be spanned by connecting devices in series. The structure of the multilevel inverter is such that no voltage sharing problems are encountered by the series-conn ...
... wave decreases until it reaches zero with an infinite number of levels. As the number of levels increases, the higher the voltage which can be spanned by connecting devices in series. The structure of the multilevel inverter is such that no voltage sharing problems are encountered by the series-conn ...
SOT-23 Plastic-Encapsulate Transistors CJ3420
... RDS(on).This device is suitable for use as a uni-directional or bi-directional ...
... RDS(on).This device is suitable for use as a uni-directional or bi-directional ...
P–n diode
This article provides a more detailed explanation of p–n diode behavior than that found in the articles p–n junction or diode.A p–n diode is a type of semiconductor diode based upon the p–n junction. The diode conducts current in only one direction, and it is made by joining a p-type semiconducting layer to an n-type semiconducting layer. Semiconductor diodes have multiple uses including rectification of alternating current to direct current, detection of radio signals, emitting light and detecting light.