Clock driver
... electrostrictive element 30 to ground. Once the element said electrostrictive means to move. 30 has discharged to the ground the cycle repeats. 5. An electro-mechanical clock mechanism as defined FIGURE 7 shows an improved charging and discharg in claim 4 wherein said electrostrictive means comprise ...
... electrostrictive element 30 to ground. Once the element said electrostrictive means to move. 30 has discharged to the ground the cycle repeats. 5. An electro-mechanical clock mechanism as defined FIGURE 7 shows an improved charging and discharg in claim 4 wherein said electrostrictive means comprise ...
International Journal of Energy and Environment
... The simulink model is as shown in Figure 2 (b). Here V is varied from 0 V to 0.7 V in steps. With slight modification in Figure 2 (b) i.e. Figure 2 (c) effect of change in insolation on V-I characteristic can be seen as shown in Figure 2 (d). The shifting of diode characteristic curve with increasin ...
... The simulink model is as shown in Figure 2 (b). Here V is varied from 0 V to 0.7 V in steps. With slight modification in Figure 2 (b) i.e. Figure 2 (c) effect of change in insolation on V-I characteristic can be seen as shown in Figure 2 (d). The shifting of diode characteristic curve with increasin ...
LT1512
... The LT1512 is an IC battery charger chip specifically optimized to use the SEPIC converter topology. The SEPIC topology has unique advantages for battery charging. It will operate with input voltages above, equal to or below the battery voltage, has no path for battery discharge when turned off and e ...
... The LT1512 is an IC battery charger chip specifically optimized to use the SEPIC converter topology. The SEPIC topology has unique advantages for battery charging. It will operate with input voltages above, equal to or below the battery voltage, has no path for battery discharge when turned off and e ...
ISL6730A, ISL6730B, ISL6730C, ISL6730D Datasheet
... minimizes zero crossing distortion and reduces the magnetic components size. The small external components result in a low cost design without sacrificing performance. The internally clamped 12.5V gate driver delivers 1.5A peak current to the external power MOSFET. The ISL6730A, ISL6730B, ISL6730C, ...
... minimizes zero crossing distortion and reduces the magnetic components size. The small external components result in a low cost design without sacrificing performance. The internally clamped 12.5V gate driver delivers 1.5A peak current to the external power MOSFET. The ISL6730A, ISL6730B, ISL6730C, ...
OPA349, OPA2349 - Texas Instruments
... extends 200mV beyond the supply rails. This is achieved with a complementary input stage—an N-channel input differential pair in parallel with a P-channel differential pair (as shown in Figure 2). The N-channel pair is active for input voltages close to the positive rail, typically (V+) – 1.3V to 20 ...
... extends 200mV beyond the supply rails. This is achieved with a complementary input stage—an N-channel input differential pair in parallel with a P-channel differential pair (as shown in Figure 2). The N-channel pair is active for input voltages close to the positive rail, typically (V+) – 1.3V to 20 ...
frydaddy - Hagerman Audio Labs
... Hagerman Audio Labs warrants this product free of defects in materials and workmanship for a period of 10 years. If you discover a defect, Hagerman Audio Labs will, at its option, repair or replace the product at no charge to you provided you return it during the warranty period, transportation char ...
... Hagerman Audio Labs warrants this product free of defects in materials and workmanship for a period of 10 years. If you discover a defect, Hagerman Audio Labs will, at its option, repair or replace the product at no charge to you provided you return it during the warranty period, transportation char ...
MAX1748/MAX8726 Triple-Output TFT-LCD DC-DC Converters General Description
... positive output voltage. The MAX1748/MAX8726 contain internal p-channel and n-channel MOSFETs to control the power transfer. The internal MOSFETs switch at a constant 500kHz (0.5 x fOSC). Negative Charge Pump During the first half-cycle, the p-channel MOSFET turns on and the flying capacitor C5 char ...
... positive output voltage. The MAX1748/MAX8726 contain internal p-channel and n-channel MOSFETs to control the power transfer. The internal MOSFETs switch at a constant 500kHz (0.5 x fOSC). Negative Charge Pump During the first half-cycle, the p-channel MOSFET turns on and the flying capacitor C5 char ...
Active bias network-based measurement set
... devices is a task commonly performed in the fields of technology performance evaluation and development [1,2], device reliability investigation [3,4] and empirical noise modelling [5-7]. All these applications require the accurate estimation of auto- and cross-spectral density functions (i.e., power ...
... devices is a task commonly performed in the fields of technology performance evaluation and development [1,2], device reliability investigation [3,4] and empirical noise modelling [5-7]. All these applications require the accurate estimation of auto- and cross-spectral density functions (i.e., power ...
AN-9744 Smart LED Lamp Driver IC with PFC Function
... arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance w ...
... arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance w ...
AL8400 /AL8400Q Description Applications Pin Assignments
... The AL8400 requires an output capacitor, CL in Figure 2, to be connected from the OUT pin to Ground. This capacitor is required to compensate the current control loop of the AL8400. This compensation capacitor must be placed as close to the OUT pin as possible < 5mm. If the PCB traces are too long, ...
... The AL8400 requires an output capacitor, CL in Figure 2, to be connected from the OUT pin to Ground. This capacitor is required to compensate the current control loop of the AL8400. This compensation capacitor must be placed as close to the OUT pin as possible < 5mm. If the PCB traces are too long, ...
AN-7019 Limiting Cross-Conduction Current in Synchronous Buck Converter Designs
... At this point, the conditions for cross conduction can be evaluated as follows, If Vg calculated from equation (6) is less than the lower MOSFET gate threshold voltage Vgth i.e. Vg < Vgth, then no cross conduction is expected. Notice that Vg in (6) is independent of Rg, which is to be expected. As “ ...
... At this point, the conditions for cross conduction can be evaluated as follows, If Vg calculated from equation (6) is less than the lower MOSFET gate threshold voltage Vgth i.e. Vg < Vgth, then no cross conduction is expected. Notice that Vg in (6) is independent of Rg, which is to be expected. As “ ...
AG21195206
... assuming a large capacitor, the secondary winding voltage remains almost constant and equals to ...
... assuming a large capacitor, the secondary winding voltage remains almost constant and equals to ...
Bipolar Junction Transistors
... before the maximum collector current rating. Just something to keep in mind when designing a transistor circuit! Saturation voltages: Ideally, a saturated transistor acts as a closed switch contact between collector and emitter, dropping zero voltage at full collector current. In reality this is ne ...
... before the maximum collector current rating. Just something to keep in mind when designing a transistor circuit! Saturation voltages: Ideally, a saturated transistor acts as a closed switch contact between collector and emitter, dropping zero voltage at full collector current. In reality this is ne ...
ZXSC100 SINGLE CELL DC-DC CONVERTER SOLUTION Description
... 2. In higher load current applications an additional PNP can be used to increase the drive current of the main external NPN switching transistor. The PNP base should be connected to BAS pin, its emitter to the RE pin and its collector connected to VDRIVE pin. ...
... 2. In higher load current applications an additional PNP can be used to increase the drive current of the main external NPN switching transistor. The PNP base should be connected to BAS pin, its emitter to the RE pin and its collector connected to VDRIVE pin. ...
HYDROGEN EVOLUTION AT SILVER ELECTRODES BY HOT
... band. Since the offset voltages of the valence band with respect to the Fermi levels in the metals is larger than the contact voltages discussed above, tunnelling via the conduction band of the AlOx will prevail in any case over hole tunnelling via the valence band. However, electron tunnelling in t ...
... band. Since the offset voltages of the valence band with respect to the Fermi levels in the metals is larger than the contact voltages discussed above, tunnelling via the conduction band of the AlOx will prevail in any case over hole tunnelling via the valence band. However, electron tunnelling in t ...
Film Capacitors - EMI Suppression Capacitors (MKP
... Permissible heat exposure loads on film capacitors are primarily characterized by the upper category temperature Tmax. Long exposure to temperatures above this type-related temperature limit can lead to changes in the plastic dielectric and thus change irreversibly a capacitor's electrical character ...
... Permissible heat exposure loads on film capacitors are primarily characterized by the upper category temperature Tmax. Long exposure to temperatures above this type-related temperature limit can lead to changes in the plastic dielectric and thus change irreversibly a capacitor's electrical character ...
Proceedings - Experimental Particle Physics Department
... important feature of epitaxial diodes is that the full-depletion voltage does not increase with annealing time [14] - in time scales and flunece ranges considered here. The diodes have a 0.5 cm x 0.5 cm active area and a guard ring structure. Two diodes per RMSB in the ID are used for measurements o ...
... important feature of epitaxial diodes is that the full-depletion voltage does not increase with annealing time [14] - in time scales and flunece ranges considered here. The diodes have a 0.5 cm x 0.5 cm active area and a guard ring structure. Two diodes per RMSB in the ID are used for measurements o ...
ZXLD383 Summary A Product Line of
... VOUT reaches the load LED’s forward (on) voltage, the inductor current is transferred from the internal switch to the LED, starting the energy discharge cycle. With the voltage across the inductor reversed, the current flowing through it (and the LED) now falls. When the inductor current reaches zer ...
... VOUT reaches the load LED’s forward (on) voltage, the inductor current is transferred from the internal switch to the LED, starting the energy discharge cycle. With the voltage across the inductor reversed, the current flowing through it (and the LED) now falls. When the inductor current reaches zer ...
ISSCC 2016 Digest of Technical Papers
... LPF_en are simultaneously turned on and tSTART-UP is 62ms. In contrast, in Fig. 5.7.5(b), tSTART-UP is 3.9ms, because the LPF is disabled during the start-up and the LPF is enabled after the start-up. The delayed turn-on of LPF_en does not affect the waveform of Out. Thus, by disabling the LPF durin ...
... LPF_en are simultaneously turned on and tSTART-UP is 62ms. In contrast, in Fig. 5.7.5(b), tSTART-UP is 3.9ms, because the LPF is disabled during the start-up and the LPF is enabled after the start-up. The delayed turn-on of LPF_en does not affect the waveform of Out. Thus, by disabling the LPF durin ...
P–n diode
This article provides a more detailed explanation of p–n diode behavior than that found in the articles p–n junction or diode.A p–n diode is a type of semiconductor diode based upon the p–n junction. The diode conducts current in only one direction, and it is made by joining a p-type semiconducting layer to an n-type semiconducting layer. Semiconductor diodes have multiple uses including rectification of alternating current to direct current, detection of radio signals, emitting light and detecting light.