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Transcript
US5U1 Transistors 2.5V Drive Nch+SBD MOSFET US5U1 zStructure Silicon N-channel MOSFET / Schottky barrier diode zDimensions (Unit : mm) TUMT5 2.0 zFeatures 1) Nch MOSFET and schottky barrier diode are put in TUMT5 package. 2) High-speed switching, Low On-resistance. 3) Low voltage drive (2.5V drive). 4) Built-in Low VF schottky barrier diode. 0.2Max. 1.3 Abbreviated symbol : U01 zApplications Switching zPackage specifications Package Type zInner circuit (5) Taping (4) TR Code Basic ordering unit (pieces) 3000 US5U1 ∗2 ∗1 (1) (2) ∗1 ESD protection diode ∗2 Body diode zAbsolute maximum ratings (Ta=25°C) (3) (1)Gate (2)Source (3)Anode (4)Cathode (5)Drain <MOSFET> Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 ∗2 Limits 30 12 ±1.5 ±6.0 0.75 6.0 Unit V V A A A A Power dissipation PD 0.7 W / ELEMENT Channel temperature Tch 150 °C Symbol VRM VR IF Limits 30 20 0.5 Unit V V A 2.0 0.5 A W / ELEMENT °C ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board <Di> Parameter Repetitive peak reverse voltage Reverse voltage Forward current Forward current surge peak Power dissipation Junction temperature IFSM PD Tj ∗1 ∗2 150 ∗1 60Hz 1cycle ∗2 Mounted on ceramic board Rev.B 1/3 US5U1 Transistors <MOSFET and Di> Parameter Limits Unit 1.0 −55 to +150 W / TOTAL °C Symbol PD ∗1 Tstg Total power dissipation Range of storage temperature ∗1 Mounted on a ceramic board zElectrical characteristics (Ta=25°C) <MOSFET> Parameter Symbol Gate-source leakage IGSS Drain-source breakdown voltage V(BR) DSS IDSS Zero gate voltage drain current Gate threshold voltage VGS (th) Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge RDS (on)∗ Yfs Ciss Coss Crss td (on) tr td (off) tf Qg Qgs Qgd ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ Min. − 30 − 0.5 − − − 1.5 − − − − − − − − − − Typ. Max. − − − − 170 180 240 − 80 14 12 7 9 15 6 1.6 0.5 0.3 10 − 1 1.5 240 250 340 − − − − − − − − 2.2 − − Unit µA V µA V mΩ mΩ mΩ S pF pF pF ns ns ns ns nC nC nC VGS=12V, VDS=0V ID= 1mA, VGS=0V VDS= 30V, VGS=0V VDS= 10V, ID= 1mA ID= 1.5A, VGS= 4.5V ID= 1.5A, VGS= 4V ID= 1.5A, VGS= 2.5V VDS= 10V, ID= 1.5A VDS= 10V VGS=0V f=1MHz VDD 15V ID= 0.75A VGS= 4.5V RL= 20Ω RG=10Ω VDD 15V, VGS= 4.5V ID= 1.5A RL= 10Ω, RG= 10Ω Conditions Typ. − Max. 1.2 Unit V Conditions IS= 0.75A, VGS=0V Typ. − Max. 0.36 Unit V IS= 0.1A − − 0.47 V IS= 0.5A − − 100 µA IS= 20V ∗Pulsed <Body diode characteristics (Source-drain)> Parameter Symbol Min. Forward voltage VSD − <Di> Parameter Symbol Forward voltage VF Reverse current IR Min. − Conditions Rev.B 2/3 US5U1 Transistors zElectrical characteristics curves tf 100 td(off) td(on) tr 1 0.01 Ta=25°C VDD=15V 5 ID=1.5A RG=10Ω Pulsed 4 3 2 1 10 0 0.1 0.01 0.5 1 1.5 0.001 0.0 2 1.5 2.0 2.5 Fig.2 Dynamic Input Characteristics Fig.3 Typical Transfer Characteristics 10 10 Ta=25°C Pulsed 0.7 0.6 0.5 0.4 0.3 0.2 VGS=0V Pulsed Ta=125°C 75°C 1 25°C −25°C 0.1 0.1 2 3 4 5 6 7 8 9 0.01 0.0 10 75°C 25°C −25°C DRAIN CURRENT : ID (A) Fig.7 Static Drain-Source On-State Resistance vs. Drain Current ( ΙΙ ) 10 10 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (Ω) Ta=125°C 1 Ta=125°C 1 75°C 25°C −25°C 0.1 0.01 1.5 0.1 1 VGS=2.5V Pulsed Ta=125°C 75°C 25°C −25°C 0.1 0.01 0.1 1 DRAIN CURRENT : ID (A) Fig.8 Static Drain-Source On-State Resistance vs. Drain Current ( ΙΙΙ ) 10 1 10 DRAIN CURRENT : ID (A) Fig.6 Static Drain-Source On-State Resistance vs. Drain Current ( Ι ) Fig.5 Source Current vs. Source-Drain Voltage VGS=4.0V Pulsed 0.1 1.0 VGS=4.5V Pulsed SOURCE-DRAIN VOLTAGE : VSD (V) Fig.4 Static Drain-Source On-State Resistance vs. Gate source Voltage 10 0.5 10 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (Ω) 1 GATE-SOURCE VOLTAGE : VGS (V) 0.1 0.01 1.0 Fig.1 Switching Characteristics 0.8 1 0.5 GATE-SOURCE VOLTAGE : VGS (V) SOURCE CURRENT : IS (A) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (mΩ) 75°C 25°C −25°C TOTAL GATE CHARGE : Qg (nC) 0.9 0.0 0 Ta=125°C DRAIN CURRENT : ID (A) 1.0 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (Ω) 1 1 0 0.1 VDS=10V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (Ω) 10 10 6 DRAIN CURRENT : ID (A) Ta=25°C VDD=15V VGS=4.5V RG=10Ω Pulsed GATE-SOURCE VOLTAGE : VGS (V) SWITCHING TIME : t (ns) 1000 Ta=25°C Pulsed 1 VGS=2.5V VGS=4V VGS=4.5V 0.1 0.01 0.1 1 10 DRAIN CURRENT : ID (A) Fig.9 Static Drain-Source On-State Resistance vs. Drain Current ( Ι ) Rev.B 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1
