Download RTR020P02

RTR020P02
Transistors
2.5V Drive Pch MOS FET
RTR020P02
zStructure
Silicon P-channel MOS FET
zExternal dimensions (Unit : mm)
TSMT3
1.0MAX
zFeatures
1) Low On-resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (TSMT3).
2.9
0.85
0.4
0.7
1.6
2.8
(3)
0.16
(1) Gate
zApplication
Power switching, DC / DC converter.
Each lead has same dimensions
(2) Source
Abbreviated symbol : TX
(3) Drain
zPackaging specifications
Type
0.3~0.6
0.95 0.95
1.9
Package
0~0.1
(2)
(1)
zEquivalent circuit
Taping
(3)
TL
Code
Basic ordering unit (pieces)
3000
RTR020P02
∗2
(1)
∗1
(2)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(1) Gate
(2) Source
(3) Drain
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Continuous
Pulsed
Continuous
Pulsed
Total power dissipation
Channel temperature
Range of Storage temperature
Symbol
VDSS
VGSS
ID
IDP ∗1
IS
ISP ∗1
PD ∗2
Tch
Tstg
Limits
−20
±12
±2.0
±8.0
−0.8
−3.2
1.0
150
−55 to +150
Unit
V
V
A
A
A
A
W
°C
°C
Symbol
Rth (ch-a) ∗
Limits
125
Unit
°C / W
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board
zThermal resistance
Parameter
Channel to ambient
∗ Mounted on a ceramic board.
Rev.A
1/4
RTR020P02
Transistors
zElectrical characteristics (Ta=25°C)
Parameter
Symbol
Min.
Typ.
Max.
Gate-source leakage
IGSS
−
Drain-source breakdown voltage V(BR) DSS −20
IDSS
Zero gate voltage drain current
−
VGS (th) −0.7
Gate threshold voltage
−
Static drain-source on-state
RDS (on) ∗
−
resistance
−
Yfs ∗ 1.2
Forward transfer admittance
Ciss
−
Input capacitance
Coss
−
Output capacitance
Crss
−
Reverse transfer capacitance
td (on) ∗
−
Turn-on delay time
tr ∗
−
Rise time
td (off) ∗
−
Turn-off delay time
tf ∗
−
Fall time
Qg
−
Total gate charge
Qgs
−
Gate-source charge
−
Qgd
Gate-drain charge
−
−
−
−
100
110
180
−
430
80
55
11
13
38
12
4.9
1.2
1.3
±10
−
−1
−2.0
135
150
250
−
−
−
−
−
−
−
−
−
−
−
Conditions
Unit
µA
V
µA
V
mΩ
mΩ
mΩ
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
VGS=±12V, VDS=0V
ID= −1mA, VGS=0V
VDS= −20V, VGS=0V
VDS= −10V, ID= −1mA
ID= −2.0A, VGS= −4.5V
ID= −2.0A, VGS= −4.0V
ID= −1.0A, VGS= −2.5V
VDS= −10V, ID= −1.0A
VDS= −10V
VGS=0V
f=1MHz
ID= −1.0A
VDD −15V
VGS= −4.5V
RL=15Ω
RG=10Ω
VDD −15V
VGS= −4.5V
ID= −2.0A
Unit
V
Conditions
IS= −0.8A, VGS=0V
∗Pulsed
zBody diode characteristics (Source-drain) (Ta=25°C)
Parameter
Forward voltage
Symbol
VSD
Min.
−
Typ.
−
Max.
−1.2
Rev.A
2/4
RTR020P02
Transistors
1
0.1
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
0.001
0.5
1.0
1.5
2.0
2.5
Ta=25°C
Pulsed
VGS= −2.5V
VGS= −4.0V
VGS= −4.5V
100
1
0.01
0.1
GATE-SOURCE VOLTAGE : −VGS (V)
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
100
1
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
10
0.1
10
1
1000
Ciss
100
Coss
Crss
1
10
10
VGS=0V
Pulsed
1
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
0.1
0.01
0
100
Ta=25°C
VDD= −15V
VGS= −4.5V
RG=10Ω
Pulsed
1000
tf
100
td (off)
td (on)
10
tr
1
0.01
0.1
1
0.5
1.0
1.5
2.0
SOURCE-DRAIN VOLTAGE : −VSD (V)
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current
SWITCHING TIME : t (ns)
CAPACITANCE : C (pF)
10
10000
10
Fig.3 Static Drain-Source On-State
Resistance vs. Drain Current
DRAIN CURRENT : −ID (A)
Ta=25°C
f=1MHz
VGS=0V
0.1
1
DRAIN CURRENT : −ID (A)
VGS= −2.5V
Pulsed
100
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current
10
0.01
10
0.1
10
1000
DRAIN CURRENT : −ID (A)
10000
100
Fig.2 Static Drain-Source On-State
Resistance vs. Drain Current
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (mΩ)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (mΩ)
VGS= −4.5V
Pulsed
10
0.1
VGS= −10V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
DRAIN CURRENT : −ID (A)
Fig.1 Typical Transfer Characteristics
1000
1
1000
REVERSE DRAIN CURRENT : −IDR (A)
0.01
1000
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (mΩ)
VDS= −10V
Pulsed
10
Fig.6 Reverse Drain Current
vs.Source-Drain Voltage
8
GATE-SOURCE VOLTAGE : −VGS (V)
DRAIN CURRENT : −ID (A)
10
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (mΩ)
zElectrical characteristic curves
Ta=25°C
VDD= −15V
ID= −2.0A
RG=10Ω
Pulsed
7
6
5
4
3
2
1
0
0
1
2
3
4
5
6
DRAIN-SOURCE VOLTAGE : −VDS (V)
DRAIN CURRENT : −ID (A)
TOTAL GATE CHARGE : Qg (nC)
Fig.7 Typical Capacitance
vs. Drain-Source Voltage
Fig.8 Switching Characteristics
Fig.9 Dynamic Input Characteristics
Rev.A
3/4
RTR020P02
Transistors
zMeasurement circuits
VGS
ID
VDS
VGS
10%
90%
RL
90%
D.U.T.
90%
RG
VDD
VDS
10%
td(on)
10%
td(off)
tr
ton
Fig.10 Switching Time Test Circuit
tr
toff
Fig.11 Switching Time Waveforms
VG
VGS
ID
VDS
RL
IG (Const.)
D.U.T.
Qg
VGS
Qgs
RG
Qgd
VDD
Charge
Fig.12 Gate Charge Test Circuit
Fig.13 Gate Charge Waveform
Rev.A
4/4
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1