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STW88N65M5
N-channel 650 V, 0.024 Ω typ., 84 A, MDmesh™ V
Power MOSFET in TO-247 package
Datasheet — production data
Features
Order code
VDSS
@Tjmax.
RDS(on) max.
ID
STW88N65M5
710 V
< 0.029 Ω
84 A
■
Worldwide best RDS(on) in TO-247
■
Higher VDSS rating
■
Higher dv/dt capability
■
Excellent switching performance
■
Easy to drive
■
100% avalanche tested
2
3
1
TO-247
Applications
■
Figure 1.
High efficiency switching applications:
– Servers
– PV inverters
– Telecom infrastructure
– Multi kW battery chargers
Internal schematic diagram
$
Description
'
This device is a N-channel MDmesh™ V Power
MOSFET based on an innovative proprietary
vertical process technology, which is combined
with STMicroelectronics’ well-known
PowerMESH™ horizontal layout structure. The
resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially
suitable for applications which require superior
power density and outstanding efficiency.
Table 1.
3
!-V
Device summary
Order code
Marking
Package
Packaging
STW88N65M5
88N65M5
TO-247
Tube
June 2012
Doc ID 022522 Rev 3
This is information on a product in full production.
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13
Contents
STW88N65M5
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................ 5
3
Test circuits
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
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STW88N65M5
1
Electrical ratings
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Value
Unit
Gate- source voltage
±25
V
ID
Drain current (continuous) at TC = 25 °C
84
A
ID
Drain current (continuous) at TC = 100 °C
50.5
A
IDM (1)
Drain current (pulsed)
336
A
PTOT
Total dissipation at TC = 25 °C
450
W
IAR
Max current during repetitive or single pulse avalanche
(pulse width limited by TJMAX)
15
A
EAS
Single pulse avalanche energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
2000
mJ
15
V/ns
- 55 to 150
°C
150
°C
Value
Unit
0.28
°C/W
50
°C/W
300
°C
VGS
Parameter
dv/dt (2) Peak diode recovery voltage slope
Tstg
Storage temperature
Tj
Max. operating junction temperature
1. Pulse width limited by safe operating area
2. ISD ≤ 84 A, di/dt = 400 A/µs, peak VDS < V(BR)DSS, VDD = 400 V
Table 3.
Symbol
Thermal data
Parameter
Rthj-case Thermal resistance junction-case max
Rthj-amb Thermal resistance junction-ambient max
Tl
Maximum lead temperature for soldering purpose
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Electrical characteristics
2
STW88N65M5
Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 4.
Symbol
V(BR)DSS
On /off states
Parameter
Test conditions
Drain-source
breakdown voltage
ID = 1 mA, VGS = 0
IDSS
Zero gate voltage
VDS = 650 V
drain current (VGS = 0) VDS = 650 V, TC=125 °C
IGSS
Gate-body leakage
current (VDS = 0)
Gate threshold voltage VDS = VGS, ID = 250 µA
RDS(on)
Static drain-source on
resistance
Symbol
Typ.
Max.
Unit
650
V
1
100
µA
µA
± 100
nA
4
5
V
0.024
0.029
Ω
Min.
Typ.
Max.
Unit
VGS = ± 25 V
VGS(th)
Table 5.
Min.
3
VGS = 10 V, ID = 42 A
Dynamic
Parameter
Test conditions
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 100 V, f = 1 MHz,
VGS = 0
-
8825
223
11
-
pF
pF
pF
Co(tr)(1)
Equivalent
capacitance time
related
VGS = 0, VDS = 0 to 520 V
-
778
-
pF
Co(er)(2)
Equivalent
capacitance energy
related
VGS = 0, VDS = 0 to 520 V
-
202
-
pF
RG
Intrinsic gate
resistance
f = 1 MHz open drain
-
1.79
-
Ω
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 520 V, ID = 42 A,
VGS = 10 V
(see Figure 16)
-
204
51
84
-
nC
nC
nC
Ciss
Coss
Crss
1. Co(tr) is a constant capacitance value that gives the same charging time as Coss while VDS is rising from 0
to 80% VDSS.
2. Co(er) is a constant capacitance value that gives the same stored energy as Coss while VDS is rising from 0
to 80% VDSS.
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Doc ID 022522 Rev 3
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STW88N65M5
Electrical characteristics
Table 6.
Symbol
Switching times
Parameter
Test conditions
Voltage delay time
Voltage rise time
Current fall time
Crossing time
td(V)
tr(V)
tf(i)
tc(off)
Table 7.
VDD = 400 V, ID = 56 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 17)
(see Figure 20)
Parameter
ISD
ISDM (1)
Source-drain current
Source-drain current (pulsed)
VSD (2)
Forward on voltage
IRRM
trr
Qrr
IRRM
Typ.
-
141
16
29
56
Min.
Typ.
Max. Unit
-
ns
ns
ns
ns
Source drain diode
Symbol
trr
Qrr
Min.
Test conditions
Max. Unit
-
84
336
A
A
ISD = 84 A, VGS = 0
-
1.5
V
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 84 A,
di/dt = 100 A/µs
VDD = 100 V (see Figure 17)
-
544
14
50
ns
µC
A
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 84 A,
di/dt = 100 A/µs
VDD = 100 V, Tj = 150 °C
(see Figure 17)
-
660
20
60
ns
µC
A
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
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Electrical characteristics
STW88N65M5
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area
Figure 3.
Thermal impedance
Figure 5.
Transfer characteristics
AM10392v1
ID
(A)
O
Li per
m at
ite io
d ni
by n
m this
ax a
R rea
is
Tj=150°C
Tc=25°C
Single pulse
D
S(
on
)
100
10
10µs
100µs
1ms
10ms
1
0.1
0.1
Figure 4.
10
1
VDS(V)
100
Output characteristics
AM10393v1
ID
(A)
VDS=30V
225
VGS=10V
250
AM10394v1
ID (A)
200
8V
175
200
150
125
150
7V
100
100
75
50
50
6V
0
0
Figure 6.
5
10
20
15
25
25
0
VDS(V)
3
Gate charge vs gate-source voltage Figure 7.
AM10395v1
VGS
(V)
VDS (V)
VDD=520V
ID=42A
14
VDS
4
5
6
7
8
9
VGS(V)
Static drain-source on resistance
AM10396v1
RDS(on)
(Ω)
VGS=10V
500
0.026
12
400
10
8
300
6
0.024
200
0.022
4
100
2
0
0
6/13
50
100
150
200
0
Qg(nC)
0.020
0
10
20 30
40 50 60
Doc ID 022522 Rev 3
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70
80
ID(A)
STW88N65M5
Figure 8.
Electrical characteristics
Capacitance variations
Figure 9.
AM10397v1
C
(pF)
Output capacitance stored energy
AM10398v1
Eoss
(µJ)
40
100000
35
10000
Ciss
30
25
1000
20
Coss
100
15
10
Crss
10
5
1
0.1
1
100
10
Figure 10. Normalized gate threshold voltage
vs temperature
AM04972v1
VGS(th)
(norm)
0
0
VDS(V)
100
200 300
400 500 600
VDS(V)
Figure 11. Normalized on resistance vs
temperature
AM05501v2
RDS(on)
(norm)
ID=250µA
2.1
1.10
ID= 42 A
1.9
VGS= 10 V
1.7
1.00
1.5
1.3
0.90
1.1
0.9
0.80
0.7
0.70
-50
-25
25
0
50
75 100
TJ(°C)
Figure 12. Source-drain diode forward
characteristics
0
25
50
75 100 125 TJ(°C)
Figure 13. Normalized VDS vs temperature
AM04974v1
VSD
(V)
0.5
-50 -25
AM10399v1
VDS
(norm)
TJ=-50°C
1.08
1.2
ID = 1mA
1.06
1.0
1.04
0.8
1.02
TJ=25°C
0.6
TJ=150°C
1.00
0.98
0.4
0.96
0.2
0
0.94
0
10
20
30
40
50 ISD(A)
0.92
-50 -25
0
25
50
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75 100
TJ(°C)
7/13
Electrical characteristics
STW88N65M5
Figure 14. Switching losses vs gate resistance
(1)
AM11171v1
E (μJ)
Eon
VDD=400V
VGS=10V
TJ=25°C
3000 ID=56A
Eoff
2000
1000
0
0
10
20
30
40
RG(Ω)
1. Eon including reverse recovery of a SiC diode
8/13
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STW88N65M5
3
Test circuits
Test circuits
Figure 15. Switching times test circuit for
resistive load
Figure 16. Gate charge test circuit
VDD
12V
47kΩ
1kΩ
100nF
3.3
μF
2200
RL
μF
VGS
IG=CONST
VDD
100Ω
Vi=20V=VGMAX
VD
RG
2200
μF
D.U.T.
D.U.T.
VG
2.7kΩ
PW
47kΩ
1kΩ
PW
AM01468v1
AM01469v1
Figure 17. Test circuit for inductive load
Figure 18. Unclamped inductive load test
switching and diode recovery times
circuit
A
A
D.U.T.
FAST
DIODE
B
B
L
A
D
G
VD
L=100μH
S
3.3
μF
B
25 Ω
1000
μF
D
VDD
2200
μF
3.3
μF
VDD
ID
G
RG
S
Vi
D.U.T.
Pw
AM01470v1
Figure 19. Unclamped inductive waveform
V(BR)DSS
AM01471v1
Figure 20. Switching time waveform
#ONCEPTWAVEFORMFOR)NDUCTIVE,OAD4URNOFF
)D
VD
6DS
)D
4DELAYOFF
OFF
IDM
6GS
6GS
ON
ID
6GS)T
VDD
VDD
6DS
)D
6DS
4R ISE
AM01472v1
4FALL
4CROSS OVER
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9/13
Package mechanical data
4
STW88N65M5
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com. ECOPACK
is an ST trademark.
Table 8.
TO-247 mechanical data
mm.
Dim.
Min.
Max.
A
4.85
5.15
A1
2.20
2.60
b
1.0
1.40
b1
2.0
2.40
b2
3.0
3.40
c
0.40
0.80
D
19.85
20.15
E
15.45
15.75
e
5.30
L
14.20
14.80
L1
3.70
4.30
L2
10/13
Typ.
5.45
5.60
18.50
∅P
3.55
3.65
∅R
4.50
5.50
S
5.30
5.50
Doc ID 022522 Rev 3
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5.70
STW88N65M5
Package mechanical data
Figure 21. TO-247 drawing
0075325_G
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11/13
Revision history
5
STW88N65M5
Revision history
Table 9.
12/13
Document revision history
Date
Revision
Changes
23-Nov-2011
1
First release.
09-Dec-2011
2
Document status promoted from preliminary data to datasheet.
12-Jun-2012
3
Updated title on the coverpage.
Doc ID 022522 Rev 3
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STW88N65M5
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