Download STFW6N120K3

STFW6N120K3
STP6N120K3, STW6N120K3
N-channel 1200 V, 1.95 Ω, 6 A, TO-3PF, TO-220, TO-247
Zener-protected SuperMESH3TM Power MOSFET
Features
Type
VDSS
RDS(on)
max
ID
Pw
STFW6N120K3
1200 V
< 2.4 Ω
6A
63
STP6N120K3
1200 V
< 2.4 Ω
6A
150 W
STW6N120K3
1200 V
< 2.4 Ω
6A
150 W
3
■
100% avalanche tested
■
Extremely large avalanche performance
■
Very low intrinsic capacitances
■
Zener-protected
3
1
Figure 1.
2
2
TO-220
Application
2
TO-3PF
Gate charge minimized
■
■
1
3
1
TO-247
Internal schematic diagram
Switching applications
Description
These devices are an N-channel SuperMESH™
Power MOSFET obtained through optimization of
ST’s well-established strip-based PowerMESH™
layout. In addition to pushing on-resistance
significantly down, special attention has been
taken to ensure a very good dynamic
performance coupled with a very large avalanche
capability for the most demanding application.
Table 1.
Device summary
Order codes
Marking
Package
STFW6N120K3
STP6N120K3
TO-3PF
6N120K3
STW6N120K3
August 2010
Packaging
TO-220
Tube
TO-247
Doc ID 15572 Rev 2
1/15
www.st.com
www.bdtic.com/ST
15
Contents
STFW6N120K3, STP6N120K3, STW6N120K3
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3
Test circuits
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
5
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2/15
.............................................. 6
Doc ID 15572 Rev 2
www.bdtic.com/ST
STFW6N120K3, STP6N120K3, STW6N120K3
1
Electrical ratings
Electrical ratings
Table 2.
Absolute maximum ratings
Value
Symbol
Parameter
Unit
TO-3PF
TO-220
TO-247
Gate- source voltage
30
V
ID
Drain current (continuous) at TC = 25 °C
6
A
ID
Drain current (continuous) at TC = 100 °C
3.8
A
Drain current (pulsed)
20
A
VGS
IDM
(1)
PTOT
Power dissipation at TC = 25 °C
IAR
Max current during repetitive or single pulse
avalanche (pulse width limited by TJMAX)
EAS
VESD(G-S)
63
150
150
W
7
A
Single pulse avalanche energy (starting
TJ = 25 °C, ID = IAR, VDD = 50 V)
180
mJ
G-S ESD (HBM-C = 100 pF, R = 1.5 kΩ)
6000
V
VISO
Insulation withstand voltage (AC)
Tstg
Storage temperature
3500
-
-
-55 to 150
V
°C
Operating junction temperature
TJ
1. Pulse width limited by safe operating area
Table 3.
Symbol
Thermal data
Parameter
Rthj-case
Thermal resistance junction-case
Rthj-pcb
Thermal resistance junction to pcb minimum
footprint
Rthj-amb
Thermal resistance junction-ambient max
TJ
Maximum lead temperature for soldering
purpose
TO-3PF
TO-220 TO-247
Unit
1.98
0.83
°C/W
-
-
-
°C/W
50
62.5
50
°C/W
300
Doc ID 15572 Rev 2
www.bdtic.com/ST
°C
3/15
Electrical characteristics
2
STFW6N120K3, STP6N120K3, STW6N120K3
Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 4.
Symbol
V(BR)DSS
On / off states
Parameter
Test conditions
Drain-source
breakdown voltage
ID = 1 mA, VGS = 0
Min.
Typ.
Max.
Unit
1200
-
-
V
IDSS
VDS = Max rating
Zero gate voltage
drain current (VGS = 0) VDS = Max rating, TJ = 125 °C
-
-
1
50
µA
µA
IGSS
Gate-body leakage
current (VDS = 0)
-
-
± 10
µA
VGS = ± 20 V, VDS = 0
VGS(th)
Gate threshold voltage VDS = VGS, ID = 100 µA
3
4
5
V
RDS(on)
Static drain-source on
resistance
-
1.95
2.4
Ω
Min.
Typ.
Max.
Unit
Table 5.
Symbol
VGS = 10 V, ID = 2.5 A
Dynamic
Parameter
Test conditions
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 100 V, f = 1 MHz,
VGS = 0
-
1050
90
1
-
pF
pF
pF
Co(tr) (1)
Equivalent
capacitance time
related
VGS = 0, VDS = 0 to 960 V
-
40
-
pF
Co(er) (2)
Equivalent
capacitance energy
related
VGS = 0, VDS = 0 to 960 V
-
25
-
pF
RG
Intrinsic gate
resistance
f = 1 MHz open drain
-
3
-
Ω
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 960 V, ID = 7.2 A,
VGS = 10 V
(see Figure 20)
-
34
7
23
-
nC
nC
nC
Ciss
Coss
Crss
1. Coss eq. time related is defined as a constant equivalent capacitance giving the same charging time as
Coss when VDS increases from 0 to 80% VDSS.
2. Coss eq. energy related is defined as a constant equivalent capacitance giving the same stored energy as
Coss when VDS increases from 0 to 80% VDSS.
4/15
Doc ID 15572 Rev 2
www.bdtic.com/ST
STFW6N120K3, STP6N120K3, STW6N120K3
Table 6.
Symbol
td(on)
tr
td(off)
tf
Electrical characteristics
Switching times on/off
Parameter
Test conditions
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Table 7.
VDD = 600 V, ID = 3.6 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 19)
Min.
Typ.
Max
Unit
-
30
12
58
32
-
ns
ns
ns
ns
Min.
Typ.
-
-
6
20
A
A
Source drain diode
Symbol
Parameter
ISD
ISDM (1)
Source-drain current
Source-drain current (pulsed)
VSD (2)
Forward on voltage
ISD = 5 A, VGS = 0
-
--
1.6
V
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 7.2 A, di/dt = 100 A/µs
VDD = 60 V TJ = 25 °C (see
Figure 24)
-
580
7
25
-
ns
µC
A
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 7.2 A, di/dt = 100 A/µs
VDD = 60 V, TJ = 150 °C
(see Figure 24)
-
840
9
22
-
ns
µC
A
Min.
Typ.
30
-
trr
Qrr
IRRM
trr
Qrr
IRRM
Test conditions
Max. Unit
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Table 8.
Symbol
BVGSO
Gate-source Zener diode
Parameter
Test conditions
Gate-source breakdown
voltage
IGS = ± 1 mA (open drain)
Max. Unit
-
V
The built-in back-to-back Zener diodes have specifically been designed to enhance not only
the device’s ESD capability, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
Doc ID 15572 Rev 2
www.bdtic.com/ST
5/15
Electrical characteristics
STFW6N120K3, STP6N120K3, STW6N120K3
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area for TO-3PF
Figure 3.
!-V
)$
!
TO3PF
K
δ=0.5
0.2
O
N
$3
PE
RA
ITE TION
D IN
BY
M THIS
AX A
2 RE
A
IS
,I
/
—S
—S
MS
M
Thermal impedance for TO-3PF
0.1
-1
10
0.05
0.02
MS
4J #
4C #
Figure 4.
-3
10
-2
10
-1
10
tp (s)
Figure 5.
Thermal impedance for TO-220
Figure 7.
Thermal impedance for TO-247
is
)
on
S(
pe
ra
ite tion
d
by in t
m his
ax a
RD rea
10µs
100µs
1ms
O
m
Li
Tj=150°C
Tc=25°C
Sinlge
pulse
0.01
0.1
10
1
100
1000 VDS(V)
Safe operating area for TO-247
AM07309v1
ID
(A)
)
on
10µs
100µs
1ms
S(
O
pe
m rat
ite ion
d
by in t
m his
ax a
RD rea
is
10
Li
10ms
Tj=150°C
Tc=25°C
0.1
6/15
-4
10
10ms
0.1
0.01
0.1
10 -5
10
AM07308v1
10
1
-2
6$36
Safe operating area for TO-220
ID
(A)
Figure 6.
Single pulse
3INLGE
PULSE
1
0.01
Sinlge
pulse
1
10
100
1000 VDS(V)
Doc ID 15572 Rev 2
www.bdtic.com/ST
STFW6N120K3, STP6N120K3, STW6N120K3
Figure 8.
Output characteristics
)$
!
Electrical characteristics
Figure 9.
!-V
6'36
Transfer characteristics
!-V
)$
!
6$36
6
6
6
6$36
Figure 10. Normalized BVDSS vs temperature
AM07911v1
BVDSS
(norm)
1.10
6'36
Figure 11. Static drain-source on resistance
AM07909v1
RDS(on)
(Ω)
2.6
VGS=10V
1.05
2.2
1.00
1.8
0.95
1.4
0.90
0.85
-50
0
50
100
1
0.5
TJ(°C)
Figure 12. Output capacitance stored energy
!-V
%OSS —*
1.5
2.5
4.5
3.5
ID(A)
Figure 13. Capacitance variations
AM07912v1
C
(pF)
10000
Ciss
1000
100
Coss
10
1
Crss
6$36
0.1
0.1
1
10
Doc ID 15572 Rev 2
www.bdtic.com/ST
100
VDS(V)
7/15
Electrical characteristics
STFW6N120K3, STP6N120K3, STW6N120K3
Figure 14. Gate charge vs gate-source voltage Figure 15. Normalized on resistance vs
temperature
!-V
6'3
6
RDS(on)
(Ω)
2.5
6$$6
6'3
)$!
AM079071v1
VGS=10V
6$3
2
1.5
1
0.5
1GN#
Figure 16. Normalized gate threshold voltage
vs temperature
!-V
6'3TH
NORM
0
-75
25
-25
75
125 TJ(°C)
Figure 17. Maximum avalanche energy vs
temperature
!-V
%!3
M*
4* #
4* #
Figure 18. Source-drain diode forward
characteristics
63$
6
!-V
4* #
4* #
4* #
8/15
)3$!
Doc ID 15572 Rev 2
www.bdtic.com/ST
STFW6N120K3, STP6N120K3, STW6N120K3
3
Test circuits
Test circuits
Figure 19. Switching times test circuit for
resistive load
Figure 20. Gate charge test circuit
VDD
12V
47kΩ
1kΩ
100nF
3.3
µF
2200
RL
µF
VGS
IG=CONST
VDD
100Ω
Vi=20V=VGMAX
VD
RG
2200
µF
D.U.T.
D.U.T.
VG
2.7kΩ
PW
47kΩ
1kΩ
PW
AM01468v1
AM01469v1
Figure 21. Test circuit for inductive load
Figure 22. Unclamped inductive load test
switching and diode recovery times
circuit
A
A
D.U.T.
FAST
DIODE
B
B
L
A
D
G
VD
L=100µH
S
3.3
µF
B
25 Ω
1000
µF
D
VDD
2200
µF
3.3
µF
VDD
ID
G
RG
S
Vi
D.U.T.
Pw
AM01470v1
Figure 23. Unclamped inductive waveform
AM01471v1
Figure 24. Switching time waveform
ton
V(BR)DSS
tdon
VD
toff
tr
tdoff
tf
90%
90%
IDM
10%
ID
VDD
10%
0
VDS
VDD
90%
VGS
AM01472v1
0
10%
Doc ID 15572 Rev 2
www.bdtic.com/ST
AM01473v1
9/15
Package mechanical data
4
STFW6N120K3, STP6N120K3, STW6N120K3
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com. ECOPACK
is an ST trademark.
10/15
Doc ID 15572 Rev 2
www.bdtic.com/ST
STFW6N120K3, STP6N120K3, STW6N120K3
Package mechanical data
TO-220 type A mechanical data
mm
Dim
Min
A
b
b1
c
D
D1
E
e
e1
F
H1
J1
L
L1
L20
L30
∅P
Q
Typ
4.40
0.61
1.14
0.48
15.25
Max
4.60
0.88
1.70
0.70
15.75
1.27
10
2.40
4.95
1.23
6.20
2.40
13
3.50
10.40
2.70
5.15
1.32
6.60
2.72
14
3.93
16.40
28.90
3.75
2.65
3.85
2.95
0015988_Rev_S
Doc ID 15572 Rev 2
www.bdtic.com/ST
11/15
Package mechanical data
STFW6N120K3, STP6N120K3, STW6N120K3
TO-3PF mechanical data
DIM.
A
C
D
D1
E
F
F2
G
G1
H
L
L2
L3
L4
L5
L6
L7
N
R
Dia
mm.
typ
min.
5.30
2.80
3.10
1.80
0.80
0.65
1.80
10.30
max.
5.70
3.20
3.50
2.20
1.10
0.95
2.20
11.50
5.45
15.30
9.80
22.80
26.30
43.20
4.30
24.30
14.60
1.80
3.80
3.40
10
15.70
10.20
23.20
26.70
44.40
4.70
24.70
15
2.20
4.20
3.80
7627132_C
12/15
Doc ID 15572 Rev 2
www.bdtic.com/ST
STFW6N120K3, STP6N120K3, STW6N120K3
Package mechanical data
TO-247 mechanical data
mm.
Dim.
A
Min.
4.85
Typ
A1
2.20
2.60
b
1.0
1.40
b1
2.0
2.40
b2
3.0
3.40
c
0.40
0.80
D
19.85
20.15
E
15.45
15.75
e
Max .
5.15
5.45
L
14.20
14.80
L1
3.70
4.30
L2
18.50
øP
3.55
3.65
øR
4.50
5.50
S
5.50
Doc ID 15572 Rev 2
www.bdtic.com/ST
13/15
Revision history
5
STFW6N120K3, STP6N120K3, STW6N120K3
Revision history
Table 9.
14/15
Document revision history
Date
Revision
Changes
15-Apr-2009
1
First release.
02-Aug-2010
2
Document status promoted from preliminary data to datasheet.
Inserted Section 2.1: Electrical characteristics (curves).
Doc ID 15572 Rev 2
www.bdtic.com/ST
STFW6N120K3, STP6N120K3, STW6N120K3
Please Read Carefully:
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
time, without notice.
All ST products are sold pursuant to ST’s terms and conditions of sale.
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no
liability whatsoever relating to the choice, selection or use of the ST products and services described herein.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this
document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products
or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such
third party products or services or any intellectual property contained therein.
UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.
UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT
RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING
APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY,
DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE
GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK.
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void
any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any
liability of ST.
ST and the ST logo are trademarks or registered trademarks of ST in various countries.
Information in this document supersedes and replaces all information previously supplied.
The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.
© 2010 STMicroelectronics - All rights reserved
STMicroelectronics group of companies
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
www.st.com
Doc ID 15572 Rev 2
www.bdtic.com/ST
15/15