Download STQ2LN60K3-AP

STQ2LN60K3-AP
N-channel 600 V, 4 Ω typ., 0.6 A SuperMESH3™ Power MOSFET
in TO-92 package
Datasheet — production data
Features
Order code
VDSS
RDS(on)
max
ID
PTOT
STQ2LN60K3-AP
600 V
< 4.5 Ω
0.6 A
2.5 W
3
■
100% avalanche tested
■
Extremely high dv/dt capability
■
Very low intrinsic capacitance
■
Improved diode reverse recovery
characteristics
■
Zener-protected
2
1
TO-92 ammopack
Applications
■
Figure 1.
Switching applications
Internal schematic diagram
D(2)
Description
This SuperMESH3™ Power MOSFET is the
result of improvements applied to
STMicroelectronics’ SuperMESH™ technology,
combined with a new optimized vertical structure.
This device boasts an extremely low onresistance, superior dynamic performance and
high avalanche capability, rendering it suitable for
the most demanding applications.
G(1)
S(3)
AM01476v1
Table 1.
Device summary
Order codes
Marking
Package
Packaging
STQ2LN60K3-AP
2LN60K3
TO-92
Ammopack
July 2012
Doc ID 023499 Rev 1
This is information on a product in full production.
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14
Contents
STQ2LN60K3-AP
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
.......................... 6
3
Test circuits
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
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.............................................. 9
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STQ2LN60K3-AP
1
Electrical ratings
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage
600
V
VGS
Gate- source voltage
± 30
V
ID
Drain current (continuous) at TC = 25 °C
0.6
A
ID
Drain current (continuous) at TC = 100 °C
0.38
A
Drain current (pulsed)
2.4
A
Total dissipation at TC = 25 °C
2.5
W
Derating factor
0.02
W/°C
Gate source ESD
(HBM-C = 100 pF, R = 1.5 kΩ)
2500
V
12
V/ns
-55 to 150
°C
150
°C
Value
Unit
IDM
(1)
PTOT
VESD(G-S)
dv/dt (2)
Tstg
Peak diode recovery voltage slope
Storage temperature
Tj
Max. operating junction temperature
1. Pulse width limited by safe operating area
2. ISD ≤ 0.6 A, di/dt ≤ 400 A/µs, peak VDS < V(BR)DSS
Table 3.
Symbol
Thermal data
Parameter
Rthj-case
Thermal resistance junction-case max
50
°C/W
Rthj-amb
Thermal resistance junction-amb max
120
°C/W
Max value
Unit
Table 4.
Symbol
Avalanche characteristics
Parameter
IAR
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
2
A
EAS
Single pulse avalanche energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
80
mJ
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Electrical characteristics
2
STQ2LN60K3-AP
Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 5.
Symbol
V(BR)DSS
On /off states
Parameter
Test conditions
Drain-source
breakdown voltage
ID = 1 mA, VGS = 0
IDSS
Zero gate voltage
VDS = 600 V
drain current (VGS = 0) VDS = 600 V, TC=125 °C
IGSS
Gate-body leakage
current (VDS = 0)
Gate threshold voltage VDS = VGS, ID = 50 µA
RDS(on
Static drain-source onVGS = 10 V, ID = 1 A
resistance
Symbol
Co(tr)(1)
Co(er)
(2)
Max.
Unit
600
V
1
50
µA
µA
± 10
µA
3
3.75
4.5
V
4
4.5
Ω
Dynamic
Parameter
Input capacitance
Output capacitance
Reverse transfer
capacitance
Ciss
Coss
Crss
Typ.
VGS = ± 20 V
VGS(th)
Table 6.
Min.
Test conditions
Min.
Typ.
Max.
Unit
VDS = 50 V, f = 1 MHz, VGS = 0
-
235
22
3.5
-
pF
pF
pF
-
14
-
pF
-
10
-
pF
Eq. capacitance time
related
VGS = 0, VDS = 0 to 480 V
Eq. capacitance
energy related
RG
Intrinsic gate
resistance
f = 1 MHz open drain
-
7
-
Ω
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 480 V, ID = 1 A,
VGS = 10 V
(see Figure 16)
-
12
1.8
7.7
-
nC
nC
nC
1. Coss eq. time related is defined as a constant equivalent capacitance giving the same charging time as Coss
when VDS increases from 0 to 80% VDSS
2. Coss eq. energy related is defined as a constant equivalent capacitance giving the same stored energy as
Coss when VDS increases from 0 to 80% VDSS
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STQ2LN60K3-AP
Electrical characteristics
Table 7.
Symbol
Switching times
Parameter
Test conditions
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
td(on)
tr
td(off)
tf
Table 8.
VDD = 300 V, ID =1 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 15)
Parameter
ISD
ISDM (1)
Source-drain current
Source-drain current (pulsed)
VSD (2)
Forward on voltage
IRRM
trr
Qrr
IRRM
Typ.
-
10
8.5
23.5
21
Min.
Typ.
Max. Unit
-
ns
ns
ns
ns
Source drain diode
Symbol
trr
Qrr
Min.
Test conditions
Max. Unit
-
0.6
2.4
A
A
ISD = 2 A, VGS = 0
-
1.5
V
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 2 A, di/dt = 100 A/µs
VDD = 60 V (see Figure 20)
-
200
800
8
ns
nC
A
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 2 A, di/dt = 100 A/µs
VDD = 60 V, Tj = 150 °C
(see Figure 20)
-
230
950
8.5
ns
nC
A
Min.
Typ.
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Table 9.
Symbol
BVGSO(1)
Gate-source Zener diode
Parameter
Test conditions
Gate-source breakdown
voltage
Igs= ± 1 mA (open drain)
30
Max. Unit
-
V
1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
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Electrical characteristics
STQ2LN60K3-AP
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area
Figure 3.
Thermal impedance
Figure 5.
Transfer characteristics
AM13065v1
ID
(A)
Tj=150°C
Tc=25°C
Single pulse
10
is
ea
ar (on)
s
i
DS
th
in ax R
ion y m
t
a
er d b
Op ite
Lim
1
0.1
10µs
100µs
1ms
10ms
0.01
0.001
0.1
Figure 4.
10
1
100
VDS(V)
Output characteristics
AM13054v1
ID
(A)
VGS=10V
AM13055v1
ID
(A)
VDS=15V
2.5
2.0
2.0
6V
1.5
1.5
1.0
1.0
0.5
0.5
5V
0
0
Figure 6.
2
4
8
6
VDS(V)
0
0
Gate charge vs gate-source voltage Figure 7.
VGS
(V)
AM13056v1
VDS
VDD=480V
ID=2A
12
(V)
500
VDS
10
400
8
2
4
8
6
VGS(V)
Static drain-source on-resistance
AM13057v1
RDS(on)
(Ω)
VGS=10V
4.2
4.0
3.8
300
6
3.6
200
4
100
2
0
0
6/14
5
10
0
Qg(nC)
3.4
3.2
3.0
0
0.2
0.4
0.6
0.8
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1.0
1.2
ID(A)
STQ2LN60K3-AP
Figure 8.
Electrical characteristics
Capacitance variations
Figure 9.
AM13058v1
C
(pF)
Ciss
Output capacitance stored energy
AM13059v1
Eoss
(µJ)
1.5
100
1
10
Coss
0.5
Crss
1
0.1
1
100
10
Figure 10. Normalized gate threshold voltage
vs temperature
AM13060v1
VGS(th)
(norm)
0
0
VDS(V)
100
VDS(V)
Figure 11. Normalized on-resistance vs
temperature
AM13061v1
RDS(on)
(norm)
ID=50µA
400 500 600
200 300
ID=1.1A
VGS=10V
1.10
2.5
1.00
2.0
1.5
0.90
1.0
0.80
0.5
0.70
-75
-25
25
75
125
0
-75
TJ(°C)
Figure 12. Normalized BVDSS vs temperature
25
-25
75
Figure 13. Source-drain diode forward
characteristics
AM13062v1
BVDSS
AM13063v1
VSD (V)
(norm)
ID=1mA
TJ(°C)
125
TJ=-50°C
0.9
TJ=25°C
1.10
0.8
0.7
1.05
0.6
1.00
0.4
TJ=150°C
0.5
0.3
0.95
0.2
0.1
0.90
-75
-25
25
75
125
TJ(°C)
0
0
1
2
3
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4
5 ISD(A)
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Electrical characteristics
STQ2LN60K3-AP
Figure 14. Maximum avalanche energy vs
temperature
AM13064v1
EAS(mJ)
90
ID=2 A
VDD=50 V
80
70
60
50
40
30
20
10
0
0
8/14
20
40
60
80
100 120 140 TJ(°C)
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STQ2LN60K3-AP
3
Test circuits
Test circuits
Figure 15. Switching times test circuit for
resistive load
Figure 16. Gate charge test circuit
VDD
12V
47kΩ
1kΩ
100nF
3.3
μF
2200
RL
μF
VGS
IG=CONST
VDD
100Ω
Vi=20V=VGMAX
VD
RG
2200
μF
D.U.T.
D.U.T.
VG
2.7kΩ
PW
47kΩ
1kΩ
PW
AM01468v1
AM01469v1
Figure 17. Test circuit for inductive load
Figure 18. Unclamped Inductive load test
switching and diode recovery times
circuit
A
A
D.U.T.
FAST
DIODE
B
B
L
A
D
G
VD
L=100μH
S
3.3
μF
B
25 Ω
1000
μF
D
VDD
2200
μF
3.3
μF
VDD
ID
G
RG
S
Vi
D.U.T.
Pw
AM01470v1
Figure 19. Unclamped inductive waveform
AM01471v1
Figure 20. Switching time waveform
ton
V(BR)DSS
tdon
VD
toff
tr
tdoff
tf
90%
90%
IDM
10%
ID
VDD
10%
0
VDS
VDD
90%
VGS
AM01472v1
0
10%
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AM01473v1
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Package mechanical data
4
STQ2LN60K3-AP
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK is an ST trademark.
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STQ2LN60K3-AP
Package mechanical data
Table 10.
TO-92 ammopack mechanical data
mm
Dim.
Min.
Typ.
Max.
A1
4.80
T
3.80
T1
1.60
T2
2.30
d
0.45
0.47
0.48
P0
12.50
12.70
12.90
P2
5.65
6.35
7.05
F1, F2
2.40
2.50
2.94
F3
4.98
5.08
5.48
delta H
-2.00
W
17.50
18.00
19.00
W0
5.50
6.00
6.50
W1
8.50
9.00
9.25
2.00
W2
0.50
H
H0
15.50
H1
18.50
21.00
16.00
18.20
25.00
27.00
H3
0.50
1.00
2.00
D0
3.80
4.00
4.20
t
0.90
L
11.00
l1
3.00
delta P
-1.00
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1.00
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Package mechanical data
STQ2LN60K3-AP
Figure 21. TO-92 ammopack drawing
T
A1
T2
H1
T1
delta H
H
H3
H0
d
L
W2
l1
W
W0
W1
F1 F2
F3
P2
D0
t
P0
0050910S_Rev_U
12/14
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5
Revision history
Revision history
Table 11.
Document revision history
Date
Revision
19-Jul-2012
1
Changes
First release.
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STQ2LN60K3-AP
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