Download STI55NF03L

STI55NF03L
N-channel 30 V, 0.01 Ω, 55 A, I²PAK
STripFET™ II Power MOSFET
Features
Type
VDSS
RDS(on) max
ID
STI55NF03L
30 V
< 0.013 Ω
55 A
■
Optimized for high switching operation
■
Low gate charge
■
Logic level gate drive
3
12
I²PAK
Application
■
Switching applications
– Automotive
Description
Figure 1.
This Power MOSFET is the latest development of
STMicroelectronics unique “single feature size”
strip-based process. The resulting transistor
shows extremely high packing density for low onresistance, rugged avalanche characteristics and
less critical alignment steps allowing remarkable
manufacturing reproducibility.
Internal schematic diagram
$4!"OR
'
3
!-V
Table 1.
Device summary
Order code
Marking
Package
Packaging
STI55NF03L
55NF03L
I²PAK
Tube
May 2011
Doc ID 018838 Rev 1
1/12
www.st.com
www.bdtic.com/ST
12
Contents
STI55NF03L
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................. 6
3
Test circuits
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2/12
............................................... 8
Doc ID 018838 Rev 1
www.bdtic.com/ST
STI55NF03L
1
Electrical ratings
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
VDS
Drain-source voltage (VGS = 0)
VGS
Gate-source voltage
Value
Unit
30
V
± 16
V
ID
Drain current (continuous) at TC = 25 °C
55
A
ID
Drain current (continuous) at TC = 100 °C
39
A
Drain current (pulsed)
220
A
Total dissipation at TC = 25 °C
80
W
Derating factor
0.53
W/°C
Single pulse avalanche energy
120
mJ
– 60 to 175
°C
Value
Unit
1.875
°C/W
IDM
(1)
PTOT
EAS (2)
Tstg
Storage temperature
Max. operating junction temperature
Tj
1. Pulse width limited by safe operating area
2. Starting Tj = 25 °C, ID= 32.5 A, VDD= 45 V
Table 3.
Symbol
Thermal data
Parameter
Rthj-case Thermal resistance junction-case max
Rthj-a
Thermal resistance junction-ambient max
62.5
°C/W
Tl
Maximum lead temperature for soldering
purpose
300
°C
Doc ID 018838 Rev 1
www.bdtic.com/ST
3/12
Electrical characteristics
2
STI55NF03L
Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 4.
Symbol
Parameter
V(BR)DSS
Drain-source
Breakdown voltage
Test conditions
ID = 250 µA, VGS = 0
Typ.
Max.
30
Unit
V
1
µA
VDS = max rating,TC=125 °C
10
µA
± 100
nA
2.5
V
0.01
0.013
0.013
0.02
Ω
Typ.
Max.
Unit
Zero gate voltage
Drain current (VGS = 0)
IGSS
Gate-body leakage
current (VDS = 0)
VGS = ± 16 V
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250 µA
RDS(on)
Static drain-source on
resistance
VGS = 10 V, ID = 27.5 A
VGS = 4.5 V, ID = 27.5 A
Symbol
Min.
VDS = max rating
IDSS
Table 5.
4/12
On/off states
1.5
Dynamic
Parameter
Ciss
Input capacitance
Coss
Output capacitance
Crss
Reverse transfer
capacitance
Qg
Total gate charge
Qgs
Gate-source charge
Qgd
Gate-drain charge
Test conditions
Min.
VDS = 25 V, f = 1 MHz,
VGS = 0
VDD = 24V, ID = 55 A,
VGS = 4.5 V
(see Figure 14)
Doc ID 018838 Rev 1
www.bdtic.com/ST
1265
pF
435
pF
115
pF
20
27
nC
7
nC
10
nC
STI55NF03L
Electrical characteristics
Table 6.
Symbol
Switching times
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on delay time
Rise time
VDD = 15 V, ID = 27.5 A
RG = 4.7 Ω VGS = 10 V
(see Figure 13)
28
400
ns
ns
td(off)
tf
Turn-off-delay time
Fall time
VDD = 15 V, ID = 27.5 A
RG = 4.7 Ω, VGS = 10 V
(see Figure 13)
25
50
ns
ns
Table 7.
Symbol
Source drain diode
Parameter
Test conditions
Min.
Typ.
Max
Unit
ISD
Source-drain current
55
A
ISDM (1)
Source-drain current
(pulsed)
220
A
VSD (2)
Forward on voltage
ISD = 55 A, VGS = 0
1.3
V
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 55 A, VDD = 30 V
di/dt = 100 A/µs,
Tj = 150 °C
(see Figure 15)
trr
Qrr
IRRM
70
160
4.5
ns
nC
A
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Doc ID 018838 Rev 1
www.bdtic.com/ST
5/12
Electrical characteristics
STI55NF03L
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area
Figure 3.
Thermal impedance
Figure 4.
Output characteristics
Figure 5.
Transfer characteristics
!-V
)$
!
6$36
Figure 6.
6/12
Normalized BVDSS vs temperature
Figure 7.
6'36
Static drain-source on resistance
Doc ID 018838 Rev 1
www.bdtic.com/ST
STI55NF03L
Figure 8.
Electrical characteristics
Gate charge vs gate-source voltage Figure 9.
Figure 10. Normalized gate threshold voltage
vs temperature
Capacitance variations
Figure 11. Normalized on resistance vs
temperature
Figure 12. Source-drain diode forward
characteristics
Doc ID 018838 Rev 1
www.bdtic.com/ST
7/12
Test circuits
3
STI55NF03L
Test circuits
Figure 13. Switching times test circuit for
resistive load
Figure 14. Gate charge test circuit
VDD
12V
47kΩ
1kΩ
100nF
3.3
μF
2200
RL
μF
VGS
IG=CONST
VDD
100Ω
Vi=20V=VGMAX
VD
RG
2200
μF
D.U.T.
D.U.T.
VG
2.7kΩ
PW
47kΩ
1kΩ
PW
AM01468v1
AM01469v1
Figure 15. Test circuit for inductive load
Figure 16. Unclamped inductive load test
switching and diode recovery times
circuit
A
A
D.U.T.
FAST
DIODE
B
B
L
A
D
G
VD
L=100μH
S
3.3
μF
B
25 Ω
1000
μF
D
VDD
2200
μF
3.3
μF
VDD
ID
G
RG
S
Vi
D.U.T.
Pw
AM01470v1
Figure 17. Unclamped inductive waveform
AM01471v1
Figure 18. Switching time waveform
ton
V(BR)DSS
tdon
VD
toff
tr
tdoff
tf
90%
90%
IDM
10%
ID
VDD
10%
0
VDS
VDD
90%
VGS
AM01472v1
8/12
0
10%
Doc ID 018838 Rev 1
www.bdtic.com/ST
AM01473v1
STI55NF03L
4
Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com. ECOPACK
is an ST trademark.
Doc ID 018838 Rev 1
www.bdtic.com/ST
9/12
Package mechanical data
Table 8.
STI55NF03L
I²PAK (TO-262) mechanical data
mm.
DIM.
min.
typ
max.
A
4.40
4.60
A1
2.40
2.72
b
0.61
0.88
b1
1.14
1.70
c
0.49
0.70
c2
1.23
1.32
D
8.95
9.35
e
2.40
2.70
e1
4.95
5.15
E
10
10.40
L
13
14
L1
3.50
3.93
L2
1.27
1.40
Figure 19. I²PAK (TO-262) drawing
0004982_Rev_H
10/12
Doc ID 018838 Rev 1
www.bdtic.com/ST
STI55NF03L
5
Revision history
Revision history
Table 9.
Document revision history
Date
Revision
18-May-2011
1
Changes
First release
Doc ID 018838 Rev 1
www.bdtic.com/ST
11/12
STI55NF03L
Please Read Carefully:
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
time, without notice.
All ST products are sold pursuant to ST’s terms and conditions of sale.
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no
liability whatsoever relating to the choice, selection or use of the ST products and services described herein.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this
document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products
or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such
third party products or services or any intellectual property contained therein.
UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.
UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT
RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING
APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY,
DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE
GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK.
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void
any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any
liability of ST.
ST and the ST logo are trademarks or registered trademarks of ST in various countries.
Information in this document supersedes and replaces all information previously supplied.
The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.
© 2011 STMicroelectronics - All rights reserved
STMicroelectronics group of companies
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
www.st.com
12/12
Doc ID 018838 Rev 1
www.bdtic.com/ST