Download STFI34NM60N

STFI34NM60N
N-channel 600 V, 0.092 Ω, 29 A MDmesh™ II Power MOSFET
in I²PAKFP package
Datasheet — production data
Features
VDS
RDS(on)
max.
ID
PTOT
600 V
0.105 Ω
29 A
40 W
Order code
STFI34NM60N
■
Fully insulated and low profile package with
increased creepage path from pin to heatsink
plate
■
100% avalanche tested
■
Low input capacitance and gate charge
■
Low gate input resistance
1
2
3
I²PAKFP
(TO-281)
Applications
■
Switching applications
Figure 1.
Internal schematic diagram
Description
$
This device is an N-channel Power MOSFET
developed using the second generation of
MDmesh™ technology. This revolutionary Power
MOSFET associates a vertical structure to the
company’s strip layout to yield one of the world’s
lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high
efficiency converters.
'
3
!-V
Table 1.
Device summary
Order code
Marking
Package
Packaging
STFI34NM60N
34NM60N
I2PAKFP (TO-281)
Tube
April 2012
Doc ID 022439 Rev 2
This is information on a product in full production.
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12
Contents
STFI34NM60N
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................ 6
3
Test circuits
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
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.............................................. 8
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STFI34NM60N
1
Electrical ratings
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage
600
V
VGS
Gate- source voltage
± 25
V
(1)
A
ID
Drain current (continuous) at TC = 25 °C
29
ID
Drain current (continuous) at TC = 100 °C
18 (1)
A
Drain current (pulsed)
116
A
Total dissipation at TC = 25 °C
40
W
IDM
(2)
PTOT
IAR
Avalanche current, repetitive or not-repetitive
(pulse width limited by TJ max)
10.5
A
EAS
Single pulse avalanche energy
(starting TJ = 25 °C, ID = IAR, VDD = 50 V)
345
mJ
Peak diode recovery voltage slope
15
V/ns
2500
V
dv/dt(3)
VISO
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t = 1 s; TC = 25 °C)
Tstg
Storage temperature
°C
Max. operating junction temperature
TJ
- 55 to 150
150
1. Limited by maximum junction temperature.
2. Pulse width limited by safe operating area.
3.
ISD ≤ 29 A, di/dt ≤ 400 A/µs, VDS peak ≤V(BR)DSS, VDD = 80% V(BR)DSS
Table 3.
Symbol
Thermal data
Parameter
Value
Unit
Rthj-case Thermal resistance junction-case max
3.1
°C/W
Rthj-amb
62.5
°C/W
Thermal resistance junction-ambient max
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Electrical characteristics
2
STFI34NM60N
Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 4.
On/off states
Value
Symbol
Parameter
Test conditions
Unit
Min.
Drain-source
V(BR)DSS breakdown voltage
(VGS = 0)
ID = 1 mA
Typ.
Max.
600
V
IDSS
Zero gate voltage
drain current (VGS = 0)
VDS = 600 V
VDS = 600 V, TC = 125 °C
1
100
µA
µA
IGSS
Gate-body leakage
current (VDS = 0)
VGS = ± 25 V
±100
nA
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250 µA
3
4
V
RDS(on)
Static drain-source
on-resistance
VGS = 10 V, ID = 14.5 A
0.092
0.105
Ω
Table 5.
Symbol
2
Dynamic
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 100 V, f = 1 MHz,
VGS = 0
-
2722
173
1.75
-
pF
pF
pF
Coss eq.(1)
Equivalent output
capacitance
VGS = 0, VDS = 0 to 480 V
-
458
-
pF
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD =300 V, ID = 14.5 A
RG = 4.7 Ω, VGS = 10 V
(see Figure 19),
(see Figure 14)
-
17
34
106
70
-
ns
ns
ns
ns
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 480 V, ID = 29 A,
VGS = 10 V,
(see Figure 15)
-
84
14
45
-
nC
nC
nC
Gate input resistance
f=1MHz Gate DC Bias=0
Test signal level=20 mV
Open drain
-
2.9
-
Ω
Ciss
Coss
Crss
Rg
1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
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STFI34NM60N
Electrical characteristics
Table 6.
Symbol
Source drain diode
Parameter
Test conditions
Min.
Typ.
Max.
Unit
-
29
116
A
A
1.6
V
ISD
ISDM (1)
Source-drain current
Source-drain current (pulsed)
VSD (2)
Forward on voltage
ISD = 29 A, VGS = 0
-
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 29 A, VDD = 60 V
di/dt=100 A/µs
(see Figure 16)
-
408
8
39
ns
µC
A
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 29 A,VDD = 60 V
di/dt=100 A/µs,
TJ = 150 °C
(see Figure 16)
-
480
10
42
ns
µC
A
trr
Qrr
IRRM
trr
Qrr
IRRM
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
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Electrical characteristics
STFI34NM60N
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area
Figure 3.
Thermal impedance
Figure 5.
Transfer characteristics
AM09018v1
ID
(A)
Tj=150°C
Tc=25°C
Single pulse
100
his
is
ea
ar (on)
S
D
xR
t
in a
n
tio y m
a
er d b
Op mite
Li
10
1
10µs
100µs
1ms
10ms
0.1
0.01
0.1
Figure 4.
10
1
VDS(V)
100
Output characteristics
AM09020v1
ID (A)
VGS=10V
80
AM09021v1
ID (A)
80
VDS=20V
70
70
60
60
6V
50
50
40
40
30
30
20
20
5V
10
0
0
Figure 6.
5
10
15
20
30
25
Figure 7.
AM09022v1
VDS (V)
VDD=480V
ID=29A
0
0
VDS(V)
Gate charge vs. gate-source
voltage
VGS
(V)
0.096
8
400
0.094
6
300
0.092
4
200
0.090
2
100
0.088
0
Qg(nC)
0.086
VDS
0
0
20
40
60
80
2
4
8
6
VGS(V)
Static drain-source on-resistance
AM09023v1
RDS(on)
(Ω)
500
10
6/12
10
VGS=10V
0
5
10
15
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20
25
ID(A)
STFI34NM60N
Figure 8.
Electrical characteristics
Capacitance variations
Figure 9.
AM09024v1
C
(pF)
Output capacitance stored energy
AM09025v1
Eoss
(µJ)
10000
Ciss
2
1000
Coss
100
1
10
1
0.1
Crss
1
100
10
Figure 10. Normalized gate threshold voltage
vs. temperature
AM09026v1
VGS(th)
(norm)
0
0
VDS(V)
200
100
300
400
500
VDS(V)
Figure 11. Normalized on-resistance vs.
temperature
AM09027v1
RDS(on)
(norm)
ID=250µA
ID=14.5A
2.25
1.10
2.00
1.00
1.75
0.90
1.50
1.25
0.80
1.00
0.70
0.60
-50 -25
0.75
25
0
50
75 100
TJ(°C)
Figure 12. Normalized VDS vs. temperature
AM09028v1
VDS
(norm)
ID=1mA
1.10
0.50
-50 -25
25
50
TJ(°C)
75 100
Figure 13. Source-drain diode forward
characteristics
AM09039v1
VSD
(V)
1.6
1.08
TJ=-50°C
1.4
1.06
TJ=25°C
1.2
1.04
1.02
1.0
1.00
0.8
TJ=150°C
0.98
0.6
0.96
0.94
0.92
-50 -25
0
0.4
0
25
50
75 100
TJ(°C)
0
5
10
15
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20
25
ISD(A)
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Test circuits
3
STFI34NM60N
Test circuits
Figure 14. Switching times test circuit for
resistive load
Figure 15. Gate charge test circuit
VDD
12V
47kΩ
1kΩ
100nF
3.3
μF
2200
RL
μF
VGS
IG=CONST
VDD
100Ω
Vi=20V=VGMAX
VD
RG
2200
μF
D.U.T.
D.U.T.
VG
2.7kΩ
PW
47kΩ
1kΩ
PW
AM01468v1
AM01469v1
Figure 16. Test circuit for inductive load
Figure 17. Unclamped inductive load test
switching and diode recovery times
circuit
A
A
D.U.T.
FAST
DIODE
B
B
L
A
D
G
VD
L=100μH
S
3.3
μF
B
25 Ω
1000
μF
D
VDD
2200
μF
3.3
μF
VDD
ID
G
RG
S
Vi
D.U.T.
Pw
AM01470v1
Figure 18. Unclamped inductive waveform
AM01471v1
Figure 19. Switching time waveform
ton
V(BR)DSS
tdon
VD
toff
tr
tdoff
tf
90%
90%
IDM
10%
ID
VDD
10%
0
VDS
VDD
90%
VGS
AM01472v1
8/12
0
10%
Doc ID 022439 Rev 2
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AM01473v1
STFI34NM60N
4
Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
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Package mechanical data
Table 7.
STFI34NM60N
I2PAKFP (TO-281) mechanical data
mm
Dim.
Min.
Typ.
Max.
A
4.40
4.60
B
2.50
2.70
D
2.50
2.75
D1
0.65
0.85
E
0.45
0.70
F
0.75
1.00
F1
1.20
G
4.95
H
10.00
10.40
L1
21.00
23.00
L2
13.20
14.10
L3
10.55
10.85
L4
2.70
3.20
L5
0.85
1.25
L6
7.30
7.50
-
5.20
Figure 20. I2PAKFP (TO-281) drawing
REV!
10/12
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STFI34NM60N
5
Revision history
Revision history
Table 8.
Document revision history
Date
Revision
07-Nov-2011
1
Initial release.
2
Units in Table 6: Source drain diode have been corrected.
Figure 6: Gate charge vs. gate-source voltage has been
updated.
Minor text changes.
19-Apr-2012
Changes
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STFI34NM60N
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