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Transcript
RE1E002SP
Pch -30V -250mA Small Signal MOSFET
Datasheet
lOutline
VDSS
-30V
RDS(on) (Max.)
1.4W
ID
-250mA
PD
150mW
lFeatures
EMT3F
(3)
(1)
(2)
lInner circuit
1) Drive circuits can be simple.
(1) Gate
(2) Source
(3) Drain
2) Built-in G-S Protection Diode.
*1 BODY DIODE
*2 ESD PROTECTION DIODE
lPackaging specifications
Packaging
Taping
Reel size (mm)
lApplication
180
Tape width (mm)
Switching
8
Type
Basic ordering unit (pcs)
3,000
Taping code
TL
Marking
WP
lAbsolute maximum ratings(Ta = 25°C)
Parameter
Symbol
Value
Unit
Drain - Source voltage
VDSS
-30
V
Continuous drain current
ID *1
250
mA
ID,pulse *2
500
mA
Gate - Source voltage
VGSS
20
V
Power dissipation
PD *3
150
mW
Tj
150
°C
Tstg
-55 to +150
°C
Pulsed drain current
Junction temperature
Range of storage temperature
lThermal resistance
Values
Parameter
Symbol
RthJA *3
Thermal resistance, junction - ambient
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© 2012 ROHM Co., Ltd. All rights reserved.
1/10
Unit
Min.
Typ.
Max.
-
-
833
°C/W
2012.08 - Rev.A
Data Sheet
RE1E002SP
lElectrical characteristics(Ta = 25°C) ,unless otherwise specified
Values
Parameter
Drain - Source breakdown
voltage
Symbol
Conditions
Unit
Min.
Typ.
Max.
V(BR)DSS
VGS = 0V, ID = -1mA
-30
-
-
V
Zero gate voltage drain current
IDSS
VDS = -30V, VGS = 0V
-
-
-1
mA
Gate - Source leakage current
IGSS
VGS = 20V, VDS = 0V
-
-
10
mA
VGS (th)
VDS = -10V, ID = -1mA
-1.0
-
-2.5
V
VGS= -10V, ID= -250mA
-
0.9
1.4
VGS= -4.5V, ID= -150mA
-
1.4
2.1
VGS= -4.0V, ID= -150mA
-
1.6
2.4
VGS= -10V, ID= -250mA, Tj=125°C
-
1.2
1.7
VDS= -10V, ID= -150mA
200
-
-
Gate threshold voltage
Static drain - source
on - state resistance
Transconductance
RDS(on) *4
gfs *4
W
mS
*1 Limited only by maximum temperature allowed.
*2 Pw  10ms, Duty cycle  1%
*3 Each therminal mounted on a recommended land
*4 Pulsed
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© 2012 ROHM Co., Ltd. All rights reserved.
2/10
2012.08 - Rev.A
Data Sheet
RE1E002SP
lElectrical characteristics(Ta = 25°C)
Values
Parameter
Symbol
Conditions
Unit
Min.
Typ.
Max.
Input capacitance
Ciss
VGS = 0V
-
30
-
Output capacitance
Coss
VDS = -10V
-
10
-
Reverse transfer capacitance
Crss
f = 1MHz
-
5
-
VDD ⋍ -15V, VGS = -10V
-
4
-
ID = -150mA
-
6
-
td(off) *4
RL = 100W
-
20
-
tf *4
RG = 10W
-
23
-
Turn - on delay time
td(on) *4
tr *4
Rise time
Turn - off delay time
Fall time
pF
ns
lBody diode electrical characteristics (Source-Drain)(Ta = 25°C)
Values
Parameter
Forward voltage
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© 2012 ROHM Co., Ltd. All rights reserved.
Symbol
VSD *4
Conditions
VGS = 0V, Is = -100mA
3/10
Unit
Min.
Typ.
Max.
-
-
-1.2
V
2012.08 - Rev.A
Data Sheet
RE1E002SP
lElectrical characteristic curves
Fig.2 Drain Current Derating Curve
120
1.2
100
1
Drain Current Dissipation
: ID/ID max. (%)
Power Dissipation : PD/PD max. [%]
Fig.1 Power Dissipation Derating Curve
80
60
40
20
0.8
0.6
0.4
0.2
0
0
0
50
100
150
-25
200
Junction Temperature : Tj [°C]
25
50
75
100
125
150
Junction Temperature : Tj [°C]
Fig.3 Typical Output Characteristics(I)
Fig.4 Typical Output Characteristics(II)
0.25
0.25
Ta=25ºC
Pulsed
0.2
VGS= -10.0V
VGS= -4.5V
VGS= -4.0V
0.15
0.1
VGS= -2.5V
0.05
Ta=25ºC
Pulsed
VGS= -10.0V
VGS= -4.5V
VGS= -4.0V
0.2
Drain Current : -ID [A]
Drain Current : -ID [A]
0
VGS= -2.5V
0.15
0.1
0.05
VGS= -2.0V
0
0
0
0.2
0.4
0.6
0.8
1
0
Drain - Source Voltage : -VDS [V]
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© 2012 ROHM Co., Ltd. All rights reserved.
2
4
6
8
10
Drain - Source Voltage : -VDS [V]
4/10
2012.08 - Rev.A
Data Sheet
RE1E002SP
lElectrical characteristic curves
Fig.6 Typical Transfer Characteristics
1
60
VDS= -10V
Pulsed
VGS = 0V
ID = -1mA
Pulsed
Drain Current : -ID [A]
Drain - Source Breakdown Voltage : -V(BR)DSS [V]
Fig.5 Breakdown Voltage
vs. Junction Temperature
40
20
0.1
Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta= -25ºC
0.01
0.001
0
-50
0
50
100
0.0
150
0.5
1.5
2.0
2.5
3.0
3.5
Gate - Source Voltage : -VGS [V]
Junction Temperature : Tj [°C]
Fig.8 Transconductance vs. Drain Current
Fig.7 Gate Threshold Voltage
vs. Junction Temperature
3
1
VDS= -10V
Pulsed
VDS = -10V
ID = -1mA
Pulsed
Transconductance : gfs [S]
Gate Threshold Voltage : -VGS(th) [V]
1.0
2
1
0
-50
0
50
100
0.01
0.001
150
Junction Temperature : Tj [°C]
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© 2012 ROHM Co., Ltd. All rights reserved.
Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta= -25ºC
0.1
0.01
0.1
1
Drain Current : -ID [A]
5/10
2012.08 - Rev.A
Data Sheet
RE1E002SP
lElectrical characteristic curves
Fig.9 Static Drain - Source On - State
Resistance vs. Gate Source Voltage
Fig.10 Static Drain - Source On - State
Resistance vs. Drain Current(I)
10000
Ta=25ºC
Pulsed
4000
ID= 0.15A
3000
ID= -0.25A
2000
1000
0
0
2
4
6
8
10
Static Drain - Source On-State Resistance
: RDS(on) [W]
Static Drain - Source On-State Resistance
: RDS(on) [W]
5000
Gate - Source Voltage : -VGS [V]
Ta=25ºC
Pulsed
VGS= -4.0V
VGS= -4.5V
VGS= -10V
1000
100
0.01
0.1
1
10
Drain Current : -ID [A]
Fig.11 Static Drain - Source On - State
Resistance vs. Junction Temperature
Static Drain - Source On-State Resistance
: RDS(on) [W]
2
1
VGS = -10V
ID = -250mA
Pulsed
0
-50 -25
0
25
50
75
100 125 150
Junction Temperature : Tj [ºC]
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© 2012 ROHM Co., Ltd. All rights reserved.
6/10
2012.08 - Rev.A
Data Sheet
RE1E002SP
lElectrical characteristic curves
Fig.12 Static Drain-Source On-State
Resistance vs. Drain Current(II)
Fig.13 Static Drain - Source On - State
Resistance vs. Drain Current(III)
10000
VGS = -10V
Pulsed
Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta= -25ºC
1000
100
0.01
0.1
1
Static Drain - Source On-State Resistance
: RDS(on) [W]
Static Drain - Source On-State Resistance
: RDS(on) [W]
10000
Drain Current :-ID [A]
VGS = -4.5V
Pulsed
Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta= -25ºC
1000
100
0.01
0.1
1
Drain Current : -ID [A]
Fig.14 Static Drain - Source On - State
Resistance vs. Drain Current(IV)
Static Drain - Source On-State Resistance
: RDS(on) [W]
10000
VGS = -4V
Pulsed
Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta= -25ºC
1000
100
0.01
0.1
1
Drain Current : -ID [A]
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© 2012 ROHM Co., Ltd. All rights reserved.
7/10
2012.08 - Rev.A
Data Sheet
RE1E002SP
lElectrical characteristic curves
Fig.16 Switching Characteristics
Fig.15 Typical Capacitance
vs. Drain - Source Voltage
1000
1000
tf
100
Switching Time : t [ns]
Capacitance : C [pF]
Ta=25ºC
f=1MHz
VGS=0V
Ciss
10
Coss
100
td(off)
10
Crss
tr
td(on)
1
VDD≒ -15V
VGS= -10V
RG=10W
Ta=25ºC
Pulsed
1
0.01
0.1
1
10
100
0.01
0.1
1
Drain Current : -ID [A]
Drain - Source Voltage : -VDS [V]
Fig.17 Source Current
vs. Source Drain Voltage
1
Source Current : -IS [A]
VGS=0V
Pulsed
0.1
Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta= -25ºC
0.01
0.0
0.5
1.0
1.5
2.0
Source-Drain Voltage : -VSD [V]
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© 2012 ROHM Co., Ltd. All rights reserved.
8/10
2012.08 - Rev.A
Data Sheet
RE1E002SP
lMeasurement circuits
Fig.1-1 Switching Time Measurement Circuit
Fig.1-2 Switching Waveforms
lNotice
This product might cause chip aging and breakdown under the large electrified environment.
Please consider to design ESD protection circuit.
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© 2012 ROHM Co., Ltd. All rights reserved.
9/10
2012.08 - Rev.A
Data Sheet
RE1E002SP
lDimensions (Unit : mm)
D
A
x
S A
HE
E
L
Lp
EMT3F
b
c
e
e1
A1
l1
A
A2
e
S
b2
Patterm of terminal position areas
DIM
A
A1
A2
b
c
D
E
e
HE
L
Lp
x
MILIMETERS
MIN
MAX
0.65
0.85
0.00
0.10
0.60
0.80
0.21
0.36
0.08
0.18
1.50
1.70
0.76
0.96
0.50
1.50
1.70
0.37
0.35
0.55
0.10
DIM
e1
b2
l1
MILIMETERS
MIN
MAX
1.05
0.46
0.65
INCHES
MIN
MAX
0
0.024
0.008
0.003
0.059
0.03
0.004
0.031
0.014
0.007
0.067
0.038
0.02
0.059
0.067
0.015
0.014
-
0.022
0.004
INCHES
MIN
-
MAX
0.041
0.018
0.026
Dimension in mm/inches
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© 2012 ROHM Co., Ltd. All rights reserved.
10/10
2012.08 - Rev.A
Notice
Notes
No copying or reproduction of this document, in part or in whole, is permitted without the
consent of ROHM Co.,Ltd.
The content specified herein is subject to change for improvement without notice.
The content specified herein is for the purpose of introducing ROHM's products (hereinafter
"Products"). If you wish to use any such Product, please be sure to refer to the specifications,
which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specified in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
information, ROHM shall bear no responsibility for such damage.
The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or
implicitly, any license to use or exercise intellectual property or other rights held by ROHM and
other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the
use of such technical information.
The Products specified in this document are intended to be used with general-use electronic
equipment or devices (such as audio visual equipment, office-automation equipment, communication devices, electronic appliances and amusement devices).
The Products specified in this document are not designed to be radiation tolerant.
While ROHM always makes efforts to enhance the quality and reliability of its Products, a
Product may fail or malfunction for a variety of reasons.
Please be sure to implement in your equipment using the Products safety measures to guard
against the possibility of physical injury, fire or any other damage caused in the event of the
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shall bear no responsibility whatsoever for your use of any Product outside of the prescribed
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The Products are not designed or manufactured to be used with any equipment, device or
system which requires an extremely high level of reliability the failure or malfunction of which
may result in a direct threat to human life or create a risk of human injury (such as a medical
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More detail product informations and catalogs are available, please contact us.
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© 2012 ROHM Co., Ltd. All rights reserved.
R1120A