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Transcript
2.5V Drive Nch+SBD MOSFET ES6U41 Structure Silicon N-channel MOSFET / Schottky barrier diode Dimensions (Unit : mm) WEMT6 Features 1) Nch MOSFET and schottky barrier diodeare put in WEMT6 package. 2) High-speed switching, Low On-resistance. 3) Low voltage drive (2.5V drive). 4) Built-in Low VF schottky barrier diode. (5) (4) (1) (2) (3) Abbreviated symbol : U41 Applications Switching Package specifications Inner circuit Package Type (6) Taping Code T2R Basic ordering unit (pieces) 8000 (6) (4) (5) ES6U41 ∗2 ∗1 (1) Absolute maximum ratings (Ta=25C) ∗1 ESD protection diode ∗2 Body diode <MOSFET> Parameter Drain-source voltage Gate-source voltage Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 Limits 30 ±12 Channel temperature Tch 150 °C Power dissipation PD 0.7 W / ELEMENT Limits 25 20 0.5 Unit V V A Continuous Pulsed Continuous Pulsed Drain current Source current (Body diode) ∗2 (2) (3) (1)Gate (2)Source (3)Anode (4)Cathode (5)Drain (6)Drain Unit V V A A A A ±1.5 ±6.0 0.75 6.0 ∗1 Pw≤10μs, Duty cycle≤1% ∗2 Mounted on a ceramic board <Di> Parameter Repetitive peak reverse voltage Reverse voltage Forward current Symbol VRM VR IF IFSM Forward current surge peak Junction temperature Power dissipation Tj PD ∗1 2.0 A ∗2 150 0.5 °C W / ELEMENT ∗1 60Hz 1cycle ∗2 Mounted on ceramic board <MOSFET and Di> Parameter Symbol Power dissipation Range of storage temperature PD ∗ Tstg Limits Unit 0.8 −55 to +150 W / TOTAL °C ∗ Mounted on a ceramic board www.rohm.com c 2012 ROHM Co., Ltd. All rights reserved. ○ 1/4 2012.02 - Rev.B ES6U41 Data Sheet Electrical characteristics <MOSFET> Parameter Symbol Gate-source leakage IGSS Drain-source breakdown voltage V(BR) DSS IDSS Zero gate voltage drain current Gate threshold voltage VGS (th) Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge RDS (on)∗ Yfs Ciss Coss Crss td (on) tr td (off) tf Qg Qgs Qgd ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ Min. − 30 − 0.5 − − − 1.5 − − − − − − − − − − Typ. Max. − − − − 170 180 240 − 80 14 12 7 9 15 6 1.6 0.5 0.3 ±10 − 1 1.5 240 250 340 − − − − − − − − 2.2 − − Unit μA V μA V mΩ mΩ mΩ S pF pF pF ns ns ns ns nC nC nC Conditions Typ. − Max. 1.2 Unit V Min. Typ. Max. Unit − − 0.36 V − − 0.52 V IF= 0.5A − − 100 μA VR= 20V VGS=±12V, VDS=0V ID= 1mA, VGS=0V VDS= 30V, VGS=0V VDS= 10V, ID= 1mA ID= 1.5A, VGS= 4.5V ID= 1.5A, VGS= 4V ID= 1.5A, VGS= 2.5V VDS= 10V, ID= 1.5A VDS= 10V VGS=0V f=1MHz VDD 15V ID= 0.75A VGS= 4.5V RL 20Ω RG= 10Ω VDD 15V, VGS= 4.5V ID= 1.5A, RL 10Ω RG= 10Ω ∗Pulsed <Body diode characteristics (Source-drain)> Parameter Symbol Min. Forward voltage VSD − Conditions IS= 0.75A, VGS=0V <Di> Parameter Symbol Forward voltage VF Reverse current IR www.rohm.com c 2012 ROHM Co., Ltd. All rights reserved. ○ Conditions IF= 0.1A 2/4 2012.02 - Rev.B ES6U41 Data Sheet Electrical characteristics curves <MOSFET> 2 1.5 1 VGS= 1.7V VGS= 1.6V 0.5 1.5 VGS= 1.7V VGS= 1.6V 0.5 Ta=25°C Pulsed 0.2 0.4 0.6 0.8 1 0 2 DRAIN-SOURCE VOLTAGE : VDS[V] 4 6 8 VGS= 2.5V VGS= 4.0V VGS= 4.5V 10 100 10 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 10 0.01 0.1 DRAIN-CURRENT : ID[A] 10 10 DRAIN-CURRENT : ID[A] Fig.7 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ) www.rohm.com c 2012 ROHM Co., Ltd. All rights reserved. ○ 100 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 10 0.01 10 0.1 1 10 DRAIN-CURRENT : ID[A] Fig.6 Static Drain-Source On-State Resistance vs. Drain Current(Ⅲ) 10 10 VDS= 10V Pulsed REVERSE DRAIN CURRENT : Is [A] Ta=125°C Ta=75°C Ta=25°C Ta= -25°C FORWARD TRANSFER ADMITTANCE : |Yfs| [S] 100 1 1 VGS= 4.0V Pulsed DRAIN-CURRENT : ID[A] VGS= 2.5V Pulsed 2.0 GATE-SOURCE VOLTAGE : VGS[V] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current(Ⅱ) 1000 1.5 1000 VGS= 4.5V Pulsed Fig.4 Static Drain-Source On-State Resistance vs. Drain Current(Ⅰ) 0.1 1.0 Fig.3 Typical Transfer Characteristics STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] 100 0.01 0.01 0.001 0.5 10 1000 Ta=25°C Pulsed 1 0.1 Fig.2 Typical Output Characteristics(Ⅱ) 1000 0.1 Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C DRAIN-SOURCE VOLTAGE : VDS[V] Fig.1 Typical Output Characteristics(Ⅰ) 0.01 1 VGS= 1.5V 0 0 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] VDS= 10V Pulsed VGS= 1.8V 1 0 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] 10 Ta=25°C Pulsed VGS= 10V VGS= 2.5V VGS= 2.2V DRAIN CURRENT : ID[A] VGS= 10V VGS= 4.5V VGS= 4.0V VGS= 2.5V VGS= 2.2V VGS= 1.8V DRAIN CURRENT : ID[A] DRAIN CURRENT : ID[A] 2 1 Ta= -25°C Ta=25°C Ta=75°C Ta=125°C 0.1 0.01 0.1 1 10 DRAIN-CURRENT : ID[A] Fig.8 Forward Transfer Admittance vs. Drain Current 3/4 VGS=0V Pulsed 1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.1 0.01 0.2 0.4 0.6 0.8 1.0 1.2 SOURCE-DRAIN VOLTAGE : VSD [V] Fig.9 Reverse Drain Current vs. Sourse-Drain Voltage 2012.02 - Rev.B ES6U41 Data Sheet 1000 5 800 ID= 1.50A 600 ID= 0.75A 400 200 td(off) 100 tf 10 tr td(on) 0 Ta=25°C VDD= 15V VGS= 4.5V RG=10Ω Pulsed GATE-SOURCE VOLTAGE : VGS [V] Ta=25°C Pulsed SWITCHING TIME : t [ns] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] 1000 1 0 2 4 6 8 10 0.01 0.1 GATE-SOURCE VOLTAGE : VGS[V] Fig.10 Static Drain-Source On-State Resistance vs. Gate Source Voltage 1 10 4 3 2 Ta=25°C VDD= 15V ID= 1.5A RG=10Ω Pulsed 1 0 0 0.5 1 1.5 2 DRAIN-CURRENT : ID[A] TOTAL GATE CHARGE : Qg [nC] Fig.11 Switching Characteristics Fig.12 Dynamic Input Characteristics CAPACITANCE : C [pF] 1000 Ciss 100 Crss 10 Coss Ta=25°C f=1MHz VGS=0V 1 0.01 0.1 1 10 100 DRAIN-SOURCE VOLTAGE : VDS[V] Fig.13 Typical Capacitance vs. Drain-Source Voltage <Di> 100000 1 pulsed 10000 Ta = 75℃ 1000 Ta = 25℃ 100 10 Ta= - 25℃ 1 0.1 0.01 FORWARD CURRENT : IF (A) (A) REVERSE CURRENT ::IIRF (A) pulsed 0.1 Ta = 75℃ Ta = 25℃ Ta= - 25℃ 0.01 0.001 0 5 10 15 20 25 0 REVERSE VOLTAGE : VR[V] Fig.1 Reverse Current vs. Reverse Voltage www.rohm.com c 2012 ROHM Co., Ltd. All rights reserved. ○ 0.1 0.2 0.3 0.4 0.5 0.6 FORWARD VOLTAGE : VF[V] Fig.2 Forward Current vs. Forward Voltage 4/4 2012.02 - Rev.B Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM and other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the use of such technical information. The Products specified in this document are intended to be used with general-use electronic equipment or devices (such as audio visual equipment, office-automation equipment, communication devices, electronic appliances and amusement devices). The Products specified in this document are not designed to be radiation tolerant. While ROHM always makes efforts to enhance the quality and reliability of its Products, a Product may fail or malfunction for a variety of reasons. Please be sure to implement in your equipment using the Products safety measures to guard against the possibility of physical injury, fire or any other damage caused in the event of the failure of any Product, such as derating, redundancy, fire control and fail-safe designs. ROHM shall bear no responsibility whatsoever for your use of any Product outside of the prescribed scope or not in accordance with the instruction manual. The Products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuelcontroller or other safety device). ROHM shall bear no responsibility in any way for use of any of the Products for the above special purposes. If a Product is intended to be used for any such special purpose, please contact a ROHM sales representative before purchasing. If you intend to export or ship overseas any Product or technology specified herein that may be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to obtain a license or permit under the Law. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. R1120A
