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Transcript
1.5V Drive Nch+SBD MOSFET ES6U2 zStructure Silicon N-channel MOSFET / Schottky barrier diode zDimensions (Unit : mm) WEMT6 zFeatures 1) Nch MOSFET and schottky barrier diode are put in WEMT6 package. 2) High-speed switching, Low On-resistance. 3) Low voltage drive (1.5V drive). 4) Built-in Low VF schottky barrier diode. (6) (5) (4) (1) (2) (3) Abbriviated symbol : U02 zApplications Switching zInner circuit (6) (4) (5) zPackage specifications Package Type Taping Code T2R Basic ordering unit (pieces) 8000 ∗2 ES6U2 ∗1 (1) ∗1 ESD protection diode ∗2 Body diode zAbsolute maximum ratings (Ta=25°C) (2) (3) (1)Gate (2)Source (3)Anode (4)Cathode (5)Drain (6)Drain <MOSFET> Parameter Drain-source voltage Gate-source voltage Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 Limits 20 ±10 Channel temperature Tch 150 °C Power dissipation PD 0.7 W / ELEMENT Limits 25 20 0.5 Unit V V A Continuous Pulsed Continuous Pulsed Drain current Source current (Body diode) ∗2 Unit V V A A A A ±1.5 ±3.0 0.5 3.0 ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board <Di> Parameter Repetitive peak reverse voltage Reverse voltage Forward current Symbol VRM VR IF IFSM Forward current surge peak Junction temperature Power dissipation Tj PD ∗1 2.0 A ∗2 150 0.5 °C W / ELEMENT ∗1 60Hz 1cyc. ∗2 Mounted on ceramic board <MOSFET and Di> Parameter Symbol Power dissipation Range of storage temperature PD ∗ Tstg Limits Unit 0.8 −55 to +150 W / TOTAL °C ∗ Mounted on a ceramic board www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 1/5 2009.12 - Rev.A ES6U2 Data Sheet zElectrical characteristics (Ta=25°C) <MOSFET> Parameter Symbol Min. Typ. Max. Gate-source leakage IGSS Drain-source breakdown voltage V(BR) DSS IDSS Zero gate voltage drain current Gate threshold voltage VGS (th) − 20 − 0.3 − − − − 1.6 − − − − − − − − − − − − − − 130 170 220 300 − 110 18 15 5 5 20 3 1.8 0.3 0.3 ±10 − 1 1.0 180 240 310 600 − − − − − − − − − − − Unit µA V µA V mΩ mΩ mΩ mΩ S pF pF pF ns ns ns ns nC nC nC <Body diode characteristics (Source-drain)> Parameter Symbol Min. Forward voltage VSD ∗ − Typ. − Max. 1.2 Unit V Min. Typ. Max. Unit − − 0.36 V − − 0.52 V IF= 0.5A − − 100 µA VR= 20V Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge RDS (on)∗ Yfs Ciss Coss Crss td (on) tr td (off) tf Qg Qgs Qgd ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ Conditions VGS=±10V, VDS=0V ID= 1mA, VGS=0V VDS= 20V, VGS=0V VDS= 10V, ID= 1mA ID= 1.5A, VGS= 4.5V ID= 1.5A, VGS= 2.5V ID= 0.8A, VGS= 1.8V ID= 0.3A, VGS= 1.5V VDS= 10V, ID= 1.5A VDS= 10V VGS=0V f=1MHz VDD 10V ID= 1A VGS= 4.5V RL 10Ω RG= 10Ω VDD 10V, VGS= 4.5V ID= 1.5A, RL 6.7Ω RG= 10Ω ∗Pulsed Conditions IS= 1.5A, VGS=0V ∗Pulsed <Di> Parameter Symbol Forward voltage VF Reverse current IR www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ Conditions IF= 0.1A 2/5 2009.12 - Rev.A ES6U2 Data Sheet zElectrical characteristics curves 1.5 1 VGS= 1.5V VGS= 1.8V VGS= 1.3V 0.5 10 Ta=25°C Pulsed VGS= 4.5V VGS= 1.8V DRAIN CURRENT : ID [A] Ta=25°C Pulsed VGS= 10V VGS= 4.5V VGS= 2.5V DRAIN CURRENT : ID [A] DRAIN CURRENT : ID [A] 1.5 VGS= 1.5V 1 VGS= 1.3V 0.5 VDS= 10V Pulsed 1 Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 0.1 0.01 VGS= 1.1V VGS= 1.2V 0 0 0.4 0.6 0.8 0.001 0 1 2 DRAIN-SOURCE VOLTAGE : VDS[V] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(on)[mΩ] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] VGS= 1.5V VGS= 1.8V VGS= 2.5V VGS= 4.5V 1000 0.1 1 100 10 0.01 10 0.1 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(on)[mΩ] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(on)[mΩ] Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 100 1 10 VGS= 1.5V Pulsed 10 0.01 10 0.1 0.1 1 DRAIN-CURRENT : ID [A] DRAIN-CURRENT : ID [A] Fig.7 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ) Fig.8 Static Drain-Source On-State Resistance vs. Drain Current(Ⅴ) www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 3/5 10 DRAIN-CURRENT : ID [A] Resistance vs. Drain Current(Ⅲ) 100 10 0.01 1 Fig.6 Static Drain-Source On-State Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 1000 2 100 Resistance vs. Drain Current(Ⅱ) 10000 1.5 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 1000 DRAIN-CURRENT : ID [A] VGS= 1.8V Pulsed 0.1 1 1 VGS= 2.5V Pulsed Fig.5 Static Drain-Source On-State Resistance vs. Drain Current(Ⅰ) 10 0.01 0.5 GATE-SOURCE VOLTAGE : VGS[V] 10000 DRAIN-CURRENT : ID [A] 1000 0 Fig.3 Typical Transfer Characteristics Ta=125°C Ta=75°C Ta=25°C Ta= -25°C Fig.4 Static Drain-Source On-State 10000 10 VGS= 4.5V Pulsed 1000 100 10 0.01 8 Fig.2 Typical Output Characteristics(Ⅱ) 10000 Ta= 25°C Pulsed 6 DRAIN-SOURCE VOLTAGE : VDS[V] Fig.1 Typical Output Characteristics(Ⅰ) 10000 4 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(on)[mΩ] 0.2 10 FORWARD TRANSFER ADMITTANCE : |Yfs| [S] 0 10 VDS= 10V Pulsed 1 Ta= -25°C Ta=25°C Ta=75°C Ta=125°C 0.1 0.01 0.1 1 10 DRAIN-CURRENT : ID [A] Fig.9 Forward Transfer Admittance vs. Drain Current 2009.12 - Rev.A ES6U2 600 1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.1 500 ID = 0.8A 400 ID = 1.5A 300 200 0.5 1 0 1.5 2 CAPACITANCE : C [pF] 3 2 Ta=25°C VDD = 10V ID = 1.5A RG=10Ω Pulsed 0 0 0.5 1 1.5 6 8 10 10 td(on) 0.01 0.1 1 10 DRAIN-CURRENT : ID [A] Fig.12 Switching Characteristics Fig.11 Static Drain-Source On-State Resistance vs. Gate Source Voltage 1000 1 4 GATE-SOURCE VOLTAGE : VGS[V] Fig.10 Reverse Drain Current vs. Sourse-Drain Voltage 4 tf 100 1 SOURCE-DRAIN VOLTAGE : VSD [V] 5 td(off) tr 0 0 Ta=25°C VDD = 10V VGS=4.5V RG=10Ω Pulsed 100 0.01 GATE-SOURCE VOLTAGE : VGS [V] 1000 Ta=25°C Pulsed SWITCHING TIME : t [ns] VGS=0V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] REVERSE DRAIN CURRENT : Is [A] 10 Data Sheet Ta=25°C f=1MHz VGS=0V Ciss 100 Coss Crss 10 0.01 2 TOTAL GATE CHARGE : Qg [nC] 0.1 1 10 100 DRAIN-SOURCE VOLTAGE : VDS[V] Fig.13 Dynamic Input Characteristics Fig.14 Typical Capacitance vs. Drain-Source Voltage <Di> 100000 1 pulsed pulsed FORWARD CURRENT : I F (A) REVERSE CURRENT : IR (A) 10000 Ta = 75℃ 1000 Ta = 25℃ 100 10 Ta= - 25℃ 1 0.1 0.01 0.1 Ta = 75℃ Ta = 25℃ Ta= - 25℃ 0.01 0.001 0 5 10 15 20 25 REVERSE VOLTAGE : VR [V] Fig.1 Reverse Current vs. Reverse Voltage www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 0 0.1 0.2 0.3 0.4 0.5 0.6 FORWARD VOLTAGE : VF[V] Fig.2 Forward Current vs. Forward Voltage 4/5 2009.12 - Rev.A ES6U2 Data Sheet zMeasurement circuit Pulse Width ID VDS VGS RL 90% 50% 10% VGS 50% VDS D.U.T. 10% VDD RG 90% tr td(on) ton 10% 90% td(off) tf toff Fig.1-2 Switching Waveforms Fig.1-1 Switching Time Measurement Circuit VG ID VDS VGS RL D.U.T. IG(Const.) RG Qg VGS Qgs Qgd VDD Charge Fig.2-1 Gate Charge Measurement Circuit FIg.2-2 Gate Charge Waveform zNotice 1. SBD has a large reverse leak current compared to other type of diode. Therefore; it would raise a junction temperature, and increase a reverse power loss. Further rise of inside temperature would cause a thermal runaway. This built-in SBD has low VF characteristics and therefore, higher leak current. Please consider enough the surrounding temperature, generating heat of MOSFET and the reverse current. 2. This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 5/5 2009.12 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM and other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the use of such technical information. The Products specified in this document are intended to be used with general-use electronic equipment or devices (such as audio visual equipment, office-automation equipment, communication devices, electronic appliances and amusement devices). The Products specified in this document are not designed to be radiation tolerant. While ROHM always makes efforts to enhance the quality and reliability of its Products, a Product may fail or malfunction for a variety of reasons. Please be sure to implement in your equipment using the Products safety measures to guard against the possibility of physical injury, fire or any other damage caused in the event of the failure of any Product, such as derating, redundancy, fire control and fail-safe designs. ROHM shall bear no responsibility whatsoever for your use of any Product outside of the prescribed scope or not in accordance with the instruction manual. The Products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuel-controller or other safety device). ROHM shall bear no responsibility in any way for use of any of the Products for the above special purposes. If a Product is intended to be used for any such special purpose, please contact a ROHM sales representative before purchasing. If you intend to export or ship overseas any Product or technology specified herein that may be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to obtain a license or permit under the Law. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2009 ROHM Co., Ltd. All rights reserved. R0039A
