Download ES6U1

1.5V Drive Pch+SBD MOSFET
ES6U1
zStructure
Silicon P-channel MOSFET /
Schottky barrier diode
zDimensions (Unit : mm)
WEMT6
zFeatures
1) Pch MOSFET and schottky barrier diode
are put in WEMT6 package.
2) High-speed switching, Low On-resistance.
3) Low voltage drive (1.5V drive).
4) Built-in Low VF schottky barrier diode.
(6)
(5)
(4)
(1)
(2)
(3)
Abbreviated symbol : U01
zApplication
Switching
zInner circuit
(6)
(4)
(5)
zPackaging specifications
Package
Type
∗2
Taping
Code
T2R
Basic ordering unit (pieces)
8000
∗1
ES6U1
(1)
∗1 ESD protection diode
∗2 Body diode
(2)
(3)
(1) Gate
(2) Source
(3) Anode
(4) Cathode
(5) Drain
(6) Drain
zAbsolute maximum ratings (Ta=25°C)
<MOSFET>
Parameter
Drain-source voltage
Gate-source voltage
Symbol
VDSS
VGSS
ID
IDP ∗1
IS
ISP ∗1
Limits
−12
±10
±1.3
±2.6
−0.5
−2.6
Unit
V
V
A
A
A
A
Channel temperature
Tch
Power dissipation
PD
150
0.7
W / ELEMENT
Limits
25
20
0.5
Unit
V
V
A
Continuous
Pulsed
Continuous
Pulsed
Drain current
Source current
(Body diode)
∗2
°C
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board
<Di>
Parameter
Repetitive peak reverse voltage
Reverse voltage
Forward current
Symbol
VRM
VR
IF
IFSM
Forward current surge peak
Junction temperature
Power dissipation
Tj
PD
∗1
2.0
A
∗2
150
0.5
°C
W / ELEMENT
∗1 60Hz 1cycle
∗2 Mounted on a ceramic board
<MOSFET and Di>
Parameter
Symbol
Power dissipation
Range of storage temperature
PD ∗
Tstg
Limits
Unit
0.8
−55 to +150
W / TOTAL
°C
∗ Mounted on a ceramic board
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c 2009 ROHM Co., Ltd. All rights reserved.
○
1/5
2009.10 - Rev.A
ES6U1
Data Sheet
zElectrical characteristics (Ta=25°C)
<MOSFET>
Parameter
Symbol
Min.
Typ.
Max.
Unit
Gate-source leakage
IGSS
−
Drain-source breakdown voltage V(BR) DSS −12
IDSS
Zero gate voltage drain current
−
Gate threshold voltage
VGS (th) −0.3
−
∗
−
Static drain-source on-state
RDS (on)
resistance
−
−
Forward transfer admittance
Yfs ∗ 1.4
Input capacitance
Ciss
−
Output capacitance
Coss
−
Reverse transfer capacitance
Crss
−
td (on) ∗
Turn-on delay time
−
tr ∗
Rise time
−
td (off) ∗
Turn-off delay time
−
tf ∗
Fall time
−
Qg ∗
Total gate charge
−
Qgs ∗
Gate-source charge
−
Qgd ∗
Gate-drain charge
−
−
−
−
−
190
280
400
530
−
290
28
21
8
10
30
9
2.4
0.6
0.4
±10
−
−1
−1.0
260
390
600
1060
−
−
−
−
−
−
−
−
−
−
−
µA
V
µA
V
mΩ
mΩ
mΩ
mΩ
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
VGS= ±10V, VDS=0V
ID= −1mA, VGS=0V
VDS= −12V, VGS=0V
VDS= −6V, ID= −1mA
ID= −1.3A, VGS= −4.5V
ID= −0.6A, VGS= −2.5V
ID= −0.6A, VGS= −1.8V
ID= −0.2A, VGS= −1.5V
VDS= −6V, ID= −1.3A
VDS= −6V
VGS= 0V
f= 1MHz
VDD −6V
ID= −0.6A
VGS= −4.5V
RL 10Ω
RG= 10Ω
RL 4.6Ω
VDD −6V
RG= 10Ω
ID= −1.3A
Conditions
Typ.
−
Max.
−1.2
Unit
V
Conditions
IS= −1.3A, VGS=0V
Min.
Typ.
Max.
Unit
−
−
0.36
V
−
−
0.52
V
IF= 0.5A
−
−
100
µA
VR= 20V
VGS= −4.5V
∗Pulsed
<MOSFET> Body diode (Source-drain)
Parameter
Symbol Min.
Forward voltage
VSD ∗
−
∗Pulsed
<Di>
Parameter
Symbol
Forward voltage
VF
Reverse current
IR
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c 2009 ROHM Co., Ltd. All rights reserved.
○
Conditions
IF= 0.1A
2/5
2009.10 - Rev.A
ES6U1
Data Sheet
zElectrical characteristics curves
2
VGS= -10V
VGS= -4.5V
VGS= -2.5V
1.5
VGS= -1.8V
1
VGS= -1.5V
0.5
1.5
10
Ta=25°C
Pulsed
VGS= -4.5V
VGS= -2.5V
VGS= -1.8V
VDS= -6V
Pulsed
DRAIN CURRENT : -ID [A]
Ta=25°C
Pulsed
DRAIN CURRENT : -ID [A]
DRAIN CURRENT : -ID [A]
2
VGS= -1.5V
1
0.5
VGS= -1.2V
1
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= - 25°C
0.1
0.01
VGS= -1.2V
VGS= -1.0V
0.001
0
0.2
0.4
0.6
0.8
1
0
2
DRAIN-SOURCE VOLTAGE : -VDS[V]
Fig.1 Typical Output Characteristics(Ⅰ)
10000
Ta=25°C
Pulsed
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(ON)[mΩ]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(ON)[mΩ]
10000
1000
VGS= -1.5V
VGS= -1.8V
VGS= -2.5V
VGS= -4.5V
100
10
0.01
0.1
1
4
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
0.1
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(ON)[mΩ]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(ON)[mΩ]
1000
100
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
10
0.01
10
0.1
10
DRAIN-CURRENT : -ID [A]
Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅳ)
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c 2009 ROHM Co., Ltd. All rights reserved.
○
10
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅲ)
10
VGS= -1.5V
Pulsed
1000
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
100
10
0.01
1
DRAIN-CURRENT : -ID [A]
Resistance vs. Drain Current(Ⅱ)
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
1
1
2
VGS= -2.5V
Pulsed
Fig.5 Static Drain-Source On-State
1000
0.1
10000
100
10000
1.5
GATE-SOURCE VOLTAGE : -VGS[V]
DRAIN-CURRENT : -ID [A]
VGS= -1.8V
Pulsed
1
Fig.3 Typical Transfer Characteristics
Resistance vs. Drain Current(Ⅰ)
10
0.01
0.5
DRAIN-SOURCE VOLTAGE : -VDS[V]
1000
DRAIN-CURRENT : -ID [A]
100
0
10
VGS= -4.5V
Pulsed
Fig.4 Static Drain-Source On-State
10000
8
Fig.2 Typical Output Characteristics(Ⅱ)
10
0.01
10
6
0.1
1
DRAIN-CURRENT : -ID [A]
Fig.8 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅴ)
3/5
10
FORWARD TRANSFER ADMITTANCE : |Yfs| [S]
0
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(ON)[mΩ]
0
VDS= -6V
Pulsed
1
Ta= -25°C
Ta=25°C
Ta=75°C
Ta=125°C
0.1
0.01
0.1
1
10
DRAIN-CURRENT : -ID [A]
Fig.9 Forward Transfer Admittance
vs. Drain Current
2009.10 - Rev.A
ES6U1
600
1
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
0.1
Ta=25°C
Pulsed
ID = -0.6A
400
ID = -1.3A
300
200
0.5
1
td (off)
100
10
td (on)
tr
0
0
Ta=25°C
VDD = -6V
VGS= -4.5V
R G=10Ω
Pulsed
tf
100
0.01
0
1.5
2
SOURCE-DRAIN VOLTAGE : -VSD [V]
Fig.10 Reverse Drain Current
vs. Sourse-Drain Voltage
4
6
8
10
1
0.01
0.1
1
GATE-SOURCE VOLTAGE : -VGS[V]
DRAIN-CURRENT : -ID [A]
Fig.11 Static Drain-Source On-State
Resistance vs. Gate Source Voltage
Fig.12 Switching Characteristics
10
1000
5
GATE-SOURCE VOLTAGE : -VGS [V]
1000
500
SWITCHING TIME : t [ns]
VGS=0V
Pulsed
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R DS(ON)[mΩ]
REVERSE DRAIN CURRENT : -Is [A]
10
Data Sheet
CAPACITANCE : C [pF]
4
3
2
Ta=25°C
VDD = -6V
ID = -1.3A
R G=10Ω
Pulsed
1
0
0
0.5
1
1.5
2
2.5
100
Ciss
Coss
10
Crss
Ta=25°C
f=1MHz
VGS=0V
1
0.01
3
0.1
1
10
100
DRAIN-SOURCE VOLTAGE : -VDS[V]
TOTAL GATE CHARGE : Qg [nC]
Fig.14 Typical Capacitance
vs. Drain-Source Voltage
Fig.13 Dynamic Input Characteristics
<Di>
100000
1
pulsed
pulsed
FORWARD CURRENT : I F (A)
REVERSE CURRENT : IR (A)
10000
Ta = 75℃
1000
Ta = 25℃
100
10
Ta= - 25℃
1
0.1
0.01
0.1
Ta = 75℃
Ta = 25℃
Ta= - 25℃
0.01
0.001
0
5
10
15
20
25
REVERSE VOLTAGE : VR [V]
Fig.1 Reverse Current vs. Reverse Voltage
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c 2009 ROHM Co., Ltd. All rights reserved.
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0
0.1
0.2
0.3
0.4
0.5
0.6
FORWARD VOLTAGE : VF[V]
Fig.2 Forward Current vs. Forward Voltage
4/5
2009.10 - Rev.A
ES6U1
Data Sheet
zMeasurement circuits
Pulse Width
ID
VDS
VGS
VGS
10%
50%
RL
D.U.T.
50%
10%
10%
VDD
RG
90%
VDS
td(on)
90%
90%
td(off)
tr
ton
Fig.1-1 Switching Time Measurement Circuit
tf
toff
Fig.1-2 Switching Waveforms
VG
ID
VDS
VGS
Qg
RL
IG(Const.)
VGS
D.U.T.
Qgs
RG
Qgd
VDD
Charge
Fig.2-1 Gate Charge Measurement Circuit
FIg.2-2 Gate Charge Waveform
zNotice
1. SBD has a large reverse leak current compared to other type of diode. Therefore; it would raise a junction temperature, and
increase a reverse power loss. Further rise of inside temperature would cause a thermal runaway.
This built-in SBD has low VF characteristics and therefore, higher leak current. Please consider enough the surrounding
temperature, generating heat of MOSFET and the reverse current.
2. This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD
protection circuit.
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c 2009 ROHM Co., Ltd. All rights reserved.
○
5/5
2009.10 - Rev.A
Notice
Notes
No copying or reproduction of this document, in part or in whole, is permitted without the
consent of ROHM Co.,Ltd.
The content specified herein is subject to change for improvement without notice.
The content specified herein is for the purpose of introducing ROHM's products (hereinafter
"Products"). If you wish to use any such Product, please be sure to refer to the specifications,
which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specified in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
information, ROHM shall bear no responsibility for such damage.
The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or
implicitly, any license to use or exercise intellectual property or other rights held by ROHM and
other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the
use of such technical information.
The Products specified in this document are intended to be used with general-use electronic
equipment or devices (such as audio visual equipment, office-automation equipment, communication devices, electronic appliances and amusement devices).
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While ROHM always makes efforts to enhance the quality and reliability of its Products, a
Product may fail or malfunction for a variety of reasons.
Please be sure to implement in your equipment using the Products safety measures to guard
against the possibility of physical injury, fire or any other damage caused in the event of the
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The Products are not designed or manufactured to be used with any equipment, device or
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may result in a direct threat to human life or create a risk of human injury (such as a medical
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