Download Nano Applications – Presentation ppt

Communication Technical College “Augustin Maior” Cluj-Napoca, Romania
In the picture below the imprimatet
circuit it reprezent the nano variant
of the big circuits.
And in this picture we can se a
classically circuit board, bigger
than the first picture we
reprezented!
Definition
 Nanotechnology is the study of
manipulating matter on
an atomic and molecular scale. Generally
nanotechnology deals with structures sized
between 1 to 100 nanometer in at least one
dimension, and involves developing materials
or devices within that size. Quantum
mechanical effects are very important at this
scale.
Materials Perspective
A number of physical phenomena become
pronounced as the size of the system
decreases. These include statistical
mechanical effects, as well as quantum
mechanical effects, for example the
“quantum size effect” where the electronic
properties of solids are altered with great
reductions in particle size. This effect does
not come into play by going from macro to
micro dimensions.
NanoMaterials
 Graphical representation of a rotaxane, useful
as a molecular switch.
 The nanomaterials field includes subfields
which develop or study materials having
unique properties arising from their
nanoscale dimensions.
Researchers are looking
into the following
nanoelectronics projects:
 Transistors built in single atom thick graphene film to enable very
high speed transistors.
 Combining gold nanoparticles with organic molecules to create a
transistor known as a NOMFET (Nanoparticle Organic Memory
Field-Effect Transistor).
 Using carbon nanotubes to direct electrons to illuminate pixels,
resulting in a lightweight, millimeter thick "nanoemmissive"
display panel.
 Making integrated circuits with features that can be measured in
nanometers (nm), such as the process that allows the production of
integrated circuits with 45 nm wide transistor gates.
 Using nanosized magnetic rings to
make Magnetoresistive Random
Access Memory (MRAM) which
research has indicated may allow
memory density of 400 GB per square
inch.
 Developing molecular-sized
transistors which may allow us to
shrink the width of transistor gates to
approximately one nm which will
significantly increase transistor
density in integrated circuits.
 Using self-aligning nanostructures to
manufacture nanoscale integrated
circuits.
 Using nanowires to build transistors
without p-n junctions.
IBM Scientists Demonstrate World's
Fastest Graphene Transistor

This accomplishment is a key milestone
for the Carbon Electronics for RF
Applications (CERA) program funded by
DARPA, in an effort to develop nextgeneration communication devices.

The high frequency record was achieved
using wafer-scale, epitaxially grown
graphene using processing technology
compatible to that used in advanced
silicon device fabrication.

Graphene is a single atom-thick layer of
carbon atoms bonded in a hexagonal
honeycomb-like arrangement. This twodimensional form of carbon has unique
electrical, optical, mechanical and
thermal properties and its technological
applications are being explored intensely.
An organic transistor paves the way
for new generations of neuro-inspired
computers

For the first time, CNRS and CEA researchers have developed a
transistor that can mimic the main functionalities of a synapse. This
organic transistor, based on pentacene and gold nanoparticles and
known as a NOMFET (Nanoparticle Organic Memory Field-Effect
Transistor), has opened the way to new generations of neuroinspired computers, capable of responding in a manner similar to the
nervous system.

In the development of new information processing strategies, one
approach consists in mimicking the way biological systems such as
neuron networks operate to produce electronic circuits with new
features. In the nervous system, a synapse is the junction between
two neurons, enabling the transmission of electric messages from
one neuron to another and the adaptation of the message as a
function of the nature of the incoming signal (plasticity). For
example, if the synapse receives very closely packed pulses of
incoming signals, it will transmit a more intense action potential.
Conversely, if the pulses are spaced farther apart, the action
potential will be weaker.
Motorola Labs Debuts First Ever Nano
Emissive Flat Screen Display Prototype
 The development of such a flat panel display is possible due to
Motorola Labs Nano Emissive Display (NED) technology, a scalable
method of growing CNTs directly on glass to enable an energy
efficient design that excels at emitting electrons. Through this costeffective process and design, Motorola showcases the potential to
create longer-lasting NED flat panel displays with high brightness,
excellent uniformity and color purity.
 Motorola’s proprietary CNT growth process provides excellent
precision in designing and manipulating a material at its molecular
level – enhancing specific characteristics – and, in the case of flat
panel displays, producing high-definition images. The electron
emission performance demonstrated by the Motorola technology
exceeds that achieved to date with the application of the CNT to the
cathode via an organic paste, the process used by other companies.
Magnetoresistive random access memory
 Unlike conventional RAM chip technologies, in MRAM data is not
stored as electric charge or current flows, but by magnetic storage
elements. The elements are formed from two ferromagnetic plates,
each of which can hold a magnetic field, separated by a thin
insulating layer. One of the two plates is a permanent magnet set to
a particular polarity, the other's field can be changed to match that
of an external field to store memory. This configuration is known as a
spin valve and is the simplest structure for a MRAM bit. A memory
device is built from a grid of such "cells".
 It is also worth comparing MRAM with another common memory
system, flash RAM. Like MRAM, flash does not lose its memory
when power is removed, which makes it very common as a "hard
disk replacement" in small devices such as digital audio players or
digital cameras. When used for reading, flash and MRAM are very
similar in power requirements. However, flash is re-written using a
large pulse of voltage (about 10 V) that is stored up over time in a
charge pump, which is both power-hungry and time consuming.
Additionally the current pulse physically degrades the flash cells,
which means flash can only be written to some finite number of
times before it must be replaced.
Single molecule transistor could
revolutionize electronic
miniaturization
 Researchers at the University of Alberta have proven the potential
for constructing electronic circuitry on a molecular scale, a
breakthrough that could shatter the limitations of conventional
transistor technology and pave the way for smaller, faster, cheaper
microelectronic devices.
 The report by National Research Council National Institute of
Nanotechnology's Molecular Scale Development Group, led by U of
A physics professor and iCORE Chair in Nanoscale Information and
Communication Technologies Dr. Robert Wolkow, has been
published in the June 2005 issue of the scientific journal Nature.
 Wolkow said his team has proven that a single molecule can be
controllably charged while all the surrounding molecules remain
neutral, causing it to act as a basic transistor. Transistors control the
flow of current in most electronic devices and are combined to form
integrated circuits used to make the microprocessors and memory
chips that drive everything from computers and cell phones to
household appliances.
Applications
 One of the major applications of
nanotechnology is in the area of
nanoelectronics with MOSFET's being made
of small nanowires ~10 nm in length. Here is a
simulation of such a nanowire.
Nano Wires

A nanowire is a nanostructure, with the diameter of the order of a
nanometer (10⁻⁹ meters). Alternatively, nanowires can be defined as
structures that have a thickness or diameter constrained to tens of
nanometers or less and an unconstrained length. At these scales,
quantum mechanical effects are important — which coined the term
"quantum wires". Many different types of nanowires exist, including
metallic (e.g., Ni, Pt, Au), semiconducting (e.g., Sip, InP, GaN, etc.),
and insulating (e.g., SiO2, TiO2). Molecular nanowires are composed
of repeating molecular units either organic (e.g. DNA)

The nanowires could be used, in the near future, to link tiny
components into extremely small circuits. Using nanotechnology,
such components could be created out of chemical compounds.
Synthesis of nanowires

There are two basic approaches of synthesizing nanowires: topdown and bottom-up approach. In a top-down approach a large piece
of material is cut down to small pieces through different means such
as lithography and electrophoresis. Whereas in a bottom-up
approach the nanowire is synthesized by the combination of
constituent ad-atoms. Most of the synthesis techniques are based on
bottom-up approach.
Conductivity of nanowires

The conductivity of a nanowire is expected to be much less than that
of the corresponding bulk material. This is due to a variety of reasons.
First, there is scattering from the wire boundaries, when the wire width is
below the free electron mean free path of the bulk material. In copper,
for example, the mean free path is 40 nm. Nanowires less than 40 nm
wide will shorten the mean free path to the wire width.

Nanowires also show other peculiar electrical properties due to
their size. Unlike carbon nanotubes, whose motion of electrons can
fall under the regime of ballistic transport (meaning the electrons
can travel freely from one electrode to the other), nanowire
conductivity is strongly influenced by edge effects. The edge effects
come from atoms that lay at the nanowire surface and are not fully
bonded to neighboring atoms like the atoms within the bulk of the
nanowire. The unbonded atoms are often a source of defects within
the nanowire, and may cause the nanowire to conduct electricity
more poorly than the bulk material.
Welding nanowires

To incorporate nanowire technology into industrial applications,
researchers in 2008 developed a method of welding nanowires
together: a sacrificial metal nanowire is placed adjacent to the ends of
the pieces to be joined (using the manipulators of a scanning electron
microscope); then an electric current is applied, which fuses the wire
ends. The technique fuses wires as small as 10 nm.
Uses of nanowires

Nanowires still belong to the experimental world of laboratories.
However, they may complement or replace carbon nanotubes in
some applications. Some early experiments have shown how they
can be used to build the next generation of computing devices.

To create active electronic elements, the first key step was to
chemically dope a semiconductor nanowire. This has already been
done to individual nanowires to create p-type and n-type
semiconductors.

The next step was to find a way to create a p-n junction, one of the
simplest electronic devices. This was achieved in two ways. The first
way was to physically cross a p-type wire over an n-type wire. The
second method involved chemically doping a single wire with
different dopants along the length. This method created a p-n
junction with only one wire.
Bottom-up approaches
 Sarfus image of a ADN biochip elaborated by
bottom-up approach.
 These seek to arrange smaller components
into more complex assemblies.
Top-down approaches
 This device transfers energy from nano-thin
layers of quantum wells to nanocrystals
above them, causing the nanocrystals to emit
visible light.
 These seek to create smaller devices by using
larger ones to direct their assembly.
Tools and Techniques
 Typical AFM setup. A microfabricated
cantilever with a sharp tip is deflected by
features on a sample surface, much like in a
phonograph but on a much smaller scale. A
laser beam reflects off the backside of the
cantilever into a set of photodetectors,
allowing the deflection to be measured and
assembled into an image of the surface.
Communication Technical College “Augustin Maior” Cluj-Napoca, Romania
Nanoyou School 2010 - 2011