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3D Transistor Research Report G.V. Kobyz E.O. Proskurina group 8V83 language instructor Contents • • • • • Introduction Main Aspects of Research Methods of Research Results Conclusion 2 Introduction • The area of the research deals with production of digital devices: 3 The aims of the study • To investigate the problem of reducing the size of transistors • To study the problem of reducing their energy consumption • To examine the problem of electric breakdown of the transistor 4 Main Aspects of Research • • • • • Advantages and disadvantages of technology Calculation of performance of new transistors Measurement of power consumption Efficiency Areas of IT technology where it can be applied 5 Methods of Research • Review scientific reports • Review scientific articles • Empirical part in the form of the interview 6 Results and Discussion • 22nm 3D Transistor provide improved perfomance at high voltage and an unprecedented perfomance gain at low voltage 7 Results and Discussion The pie chart of interest in the development of new technology 18% 82% Interested Not interested 8 Conclusion • Tri-gate transistors could improve performance and energy efficiency • Tri-gate transistors could become the basic building block for microprocessors in future technology nodes 9 Thank you for attention 10