Quantum properties of atomic-sized conductors
... electrodes, the diameter of which is reduced to single atom upon further stretching. For some metals it is even possible to form a chain of individual atoms in this fashion. Although the atomic structure of contacts can be quite complicated, as soon as the weakest point is reduced to just a single a ...
... electrodes, the diameter of which is reduced to single atom upon further stretching. For some metals it is even possible to form a chain of individual atoms in this fashion. Although the atomic structure of contacts can be quite complicated, as soon as the weakest point is reduced to just a single a ...
Magnetic polaron in (Cd,Mn)Te quantum dot inserted in ZnTe
... In this PhD work we study the optical properties of anisotropic (Cd,Mn)Te magnetic quantum dots inserted in ZnTe nanowires. The quantum dots containing typically 10% of Mn spins are elongated along the nanowire axis which tend to stabilize a light hole ground state with a spin susceptibility perpend ...
... In this PhD work we study the optical properties of anisotropic (Cd,Mn)Te magnetic quantum dots inserted in ZnTe nanowires. The quantum dots containing typically 10% of Mn spins are elongated along the nanowire axis which tend to stabilize a light hole ground state with a spin susceptibility perpend ...
Wire delay - Ping-Pong
... The overall aim of this chapter is to emphasize the importance of interconnect as the main cause of propagation delay in modern CMOS circuits, and to develop a simple RC-based wire delay model. The so called Elmore delay model is based on the assumption of a dominating time constant of a multi-stage ...
... The overall aim of this chapter is to emphasize the importance of interconnect as the main cause of propagation delay in modern CMOS circuits, and to develop a simple RC-based wire delay model. The so called Elmore delay model is based on the assumption of a dominating time constant of a multi-stage ...
Supercritical CO2 synthesized TiO2 nanowires covalently linked
... band gap element are advantageous and have been shown to enhance photo-physical properties.18–20 This is attributed to the surface defects in the core acting as temporary ‘traps’ for the electron, hole or excitons, quenching radiative recombination and reducing the quantum yield (QY).21 Notably, CdS ...
... band gap element are advantageous and have been shown to enhance photo-physical properties.18–20 This is attributed to the surface defects in the core acting as temporary ‘traps’ for the electron, hole or excitons, quenching radiative recombination and reducing the quantum yield (QY).21 Notably, CdS ...
Optical Properties of Semiconductor Quantum Dots
... dots and distilled in papers what we had learned. Things did not always work fine, far from that, but I am glad to see that we built something, that we, indeed, added a grain of sand to the mountain of human knowledge. There are many people that I must thank for this five-year adventure and I will s ...
... dots and distilled in papers what we had learned. Things did not always work fine, far from that, but I am glad to see that we built something, that we, indeed, added a grain of sand to the mountain of human knowledge. There are many people that I must thank for this five-year adventure and I will s ...
www.rsc.org/nanoscale Volume 5 | Number 16 | 21 August 2013
... arsenide nanowires on graphene by metal–organic chemical vapor deposition,14 and topological insulator bismuth selenide nanoplates on uorophlogopite mica by vapor phase transport.15 It should be noted that all of the above examples can be classied as vapor phase vdWE at a high growth temperature, ...
... arsenide nanowires on graphene by metal–organic chemical vapor deposition,14 and topological insulator bismuth selenide nanoplates on uorophlogopite mica by vapor phase transport.15 It should be noted that all of the above examples can be classied as vapor phase vdWE at a high growth temperature, ...
Novel Transistors – Beyond the Planar Silicon MOSFET
... The aim of this tutorial is to present – in a didactic format – novel and emerging transistor options for More Moore and More Than Moore applications. Even though industry is approaching the end of physical gate length scaling, the quest for new transistor designs and materials is far from over. In ...
... The aim of this tutorial is to present – in a didactic format – novel and emerging transistor options for More Moore and More Than Moore applications. Even though industry is approaching the end of physical gate length scaling, the quest for new transistor designs and materials is far from over. In ...
Multifunctional CuO nanowire devices: p-type field effect
... The overall process involves (i) optimized growth of the CuO NW and (ii) patterned transfer of NWs directly from an NW growth substrate to a device substrate via contact printing. The CuO NWs are oriented on the growth substrate. Then, a patterned device substrate is first firmly attached to a bench ...
... The overall process involves (i) optimized growth of the CuO NW and (ii) patterned transfer of NWs directly from an NW growth substrate to a device substrate via contact printing. The CuO NWs are oriented on the growth substrate. Then, a patterned device substrate is first firmly attached to a bench ...
SMART WIRE - Mindsets Online
... SMA is a smart material which, as its name suggests, has a memory. The most common SMA is an alloy (mixture of metals) of nickel and titanium called nitinol. By means of special heat treatment, a piece of SMA can be made to 'remember' a shape. For example, a length of wire can be made to remember th ...
... SMA is a smart material which, as its name suggests, has a memory. The most common SMA is an alloy (mixture of metals) of nickel and titanium called nitinol. By means of special heat treatment, a piece of SMA can be made to 'remember' a shape. For example, a length of wire can be made to remember th ...
Optical properties of cylindrical nanowires
... semiconductor cylindrical nanowires using effective mass theory. Within this approach it is possible to describe the optical and electronic properties for varying wire thickness and for a wide range of semiconductor materials. Contrary, ab initio methods using a fully atomistic description (tight-bi ...
... semiconductor cylindrical nanowires using effective mass theory. Within this approach it is possible to describe the optical and electronic properties for varying wire thickness and for a wide range of semiconductor materials. Contrary, ab initio methods using a fully atomistic description (tight-bi ...
BTEC-Electronics
... the dopant. Boron and gallium each have only three outer electrons. When mixed into the silicon lattice, they form "holes" in the lattice where a silicon electron has nothing to bond to. The absence of an electron creates the effect of a positive charge, hence the name Ptype. Holes can conduct curre ...
... the dopant. Boron and gallium each have only three outer electrons. When mixed into the silicon lattice, they form "holes" in the lattice where a silicon electron has nothing to bond to. The absence of an electron creates the effect of a positive charge, hence the name Ptype. Holes can conduct curre ...
Supplementary Information for
... where τ is the time for Vn to change from 10 % to 90 % of V0. For the calculation of the diameterdependent bandwidth (Fig. 2f), the SiO2 thickness was fixed at the nanotube inner diameter, and the nanotube length was a constant 1.5 m. The high bandwidth determined for the BIT-FET devices results in ...
... where τ is the time for Vn to change from 10 % to 90 % of V0. For the calculation of the diameterdependent bandwidth (Fig. 2f), the SiO2 thickness was fixed at the nanotube inner diameter, and the nanotube length was a constant 1.5 m. The high bandwidth determined for the BIT-FET devices results in ...
Theoretical Modeling of Transport in Nanostructures June 02, 2009
... Interest in electronic transport properties of molecular wires and junctions has continuously increased during the last decades. The basis for this interest comes both from a fundamental scientific viewpoint and the possibility of technological applications as current electronic devices continue to ...
... Interest in electronic transport properties of molecular wires and junctions has continuously increased during the last decades. The basis for this interest comes both from a fundamental scientific viewpoint and the possibility of technological applications as current electronic devices continue to ...
Magnetic-field switchable metal-insulator transitions in a quasihelical conductor Bernd Braunecker, Anders Str¨om,
... transition can arise due to localization of particles by scattering on a disorder potential.1 Since then, Anderson localization has evolved into an important topic of condensed matter physics, photonics, and ultracold atom gases.2 While the basic localization mechanism can be understood on a singlep ...
... transition can arise due to localization of particles by scattering on a disorder potential.1 Since then, Anderson localization has evolved into an important topic of condensed matter physics, photonics, and ultracold atom gases.2 While the basic localization mechanism can be understood on a singlep ...
The Kitaev chain: theoretical model and experiments
... Fei Chen, Stephanie Matern -chiff[email protected] [email protected] These two different couplings of MF correspond to two distinct topological phases. Here, the first case refers to a We will introduce a 1D toy model proposed by Kitaev [1] trivial, the second to a non-trivial phase. The Major ...
... Fei Chen, Stephanie Matern -chiff[email protected] [email protected] These two different couplings of MF correspond to two distinct topological phases. Here, the first case refers to a We will introduce a 1D toy model proposed by Kitaev [1] trivial, the second to a non-trivial phase. The Major ...
UNIVERSITI TEKNOLOGI MALAYSIA
... candidate for Complementary Metal-Oxide-Semiconductor (CMOS) technology because of its unique advantages as it was based on silicon, the material that had been working by the semiconductor industries for a period of time candidates and also due to its short-channel effect immunity, improved transpor ...
... candidate for Complementary Metal-Oxide-Semiconductor (CMOS) technology because of its unique advantages as it was based on silicon, the material that had been working by the semiconductor industries for a period of time candidates and also due to its short-channel effect immunity, improved transpor ...
INTERPLAY BETWEEN STRUCTURAL AND ELECTRONIC PROPERTIES OF CARBON NANOTUBES
... Carbon nanotubes, consisting of graphite layers wrapped into seamless cylinders, have been produced in the carbon arc and by laser vaporizing graphite ...
... Carbon nanotubes, consisting of graphite layers wrapped into seamless cylinders, have been produced in the carbon arc and by laser vaporizing graphite ...
Nanoelectronics - the GMU ECE Department
... • Note: Landauer formula can also be applied to tunnel junctions T(EF) is the transmission coefficient obtained from solving Schrodinger’s equation. • As T increases, the observed quantization tends to vanish. (kBT becomes large) ...
... • Note: Landauer formula can also be applied to tunnel junctions T(EF) is the transmission coefficient obtained from solving Schrodinger’s equation. • As T increases, the observed quantization tends to vanish. (kBT becomes large) ...
Nanowire Y-junction formation during self-faceting
... uniformity in 5 5 mm2 areas presenting 1DF coherent lengths up to 3.6 mm was also achieved,9 ensuring a one-dimensional (1D) electronic transport length larger than the electronic quantum coherence.10 Similar results have been reported by other groups by using substrates oriented in different highi ...
... uniformity in 5 5 mm2 areas presenting 1DF coherent lengths up to 3.6 mm was also achieved,9 ensuring a one-dimensional (1D) electronic transport length larger than the electronic quantum coherence.10 Similar results have been reported by other groups by using substrates oriented in different highi ...
85, 155302 (2012)
... = c ). This bulk s-wave superconductor, however, coexists with nodal fermions at k = 0. Since on both sides of = c the ground states are fully gapped, we can construct the (T -) phase diagram for this TQCP [Fig. 1(b)] by drawing two crossover curves marking kB T ∼ E0 () on both sides of c . ...
... = c ). This bulk s-wave superconductor, however, coexists with nodal fermions at k = 0. Since on both sides of = c the ground states are fully gapped, we can construct the (T -) phase diagram for this TQCP [Fig. 1(b)] by drawing two crossover curves marking kB T ∼ E0 () on both sides of c . ...
Monolithic Microwave Integrated Circuits (MMIC)
... wiring and tie points. Discrete components were then placed on the board. ...
... wiring and tie points. Discrete components were then placed on the board. ...
Charge dynamics and spin blockade in a hybrid double quantum dot
... in the charge stability diagram, showing the classic signature of a double quantum dot through the presence of an extra ridge at the intersection between the charge transitions of a corner dot and the donor. The charge number (1,1) corresponds to one electron located on the corner dot and one at the ...
... in the charge stability diagram, showing the classic signature of a double quantum dot through the presence of an extra ridge at the intersection between the charge transitions of a corner dot and the donor. The charge number (1,1) corresponds to one electron located on the corner dot and one at the ...
First-principles study of the electronic structure of CdS/ZnSe coupled
... k-point. The resulting charge density is averaged over planes parallel to the interface. This averaged charge density for a given energy at a particular k-point scaled by an arbitrary constant (same constant is used for all calculations) is plotted as a function of the distance from the interface. S ...
... k-point. The resulting charge density is averaged over planes parallel to the interface. This averaged charge density for a given energy at a particular k-point scaled by an arbitrary constant (same constant is used for all calculations) is plotted as a function of the distance from the interface. S ...
Multiple State Electrostatically Formed Nanowire Transistors
... formed. For logic applications as discussed below, the bottom gate is redundant and can be removed. Fig. 1(a) shows an illustration of a two-drain MSET device embedded in a circuit which allows definition of voltage based states. The device bulk is n type doped and the source and drains are n + dope ...
... formed. For logic applications as discussed below, the bottom gate is redundant and can be removed. Fig. 1(a) shows an illustration of a two-drain MSET device embedded in a circuit which allows definition of voltage based states. The device bulk is n type doped and the source and drains are n + dope ...
Nanowire
A nanowire is a nanostructure, with the diameter of the order of a nanometer (10−9 meters). It can also be defined as the ratio of the length to width being greater than 1000. Alternatively, nanowires can be defined as structures that have a thickness or diameter constrained to tens of nanometers or less and an unconstrained length. At these scales, quantum mechanical effects are important — which coined the term ""quantum wires"". Many different types of nanowires exist, including superconducting (e.g., YBCO), metallic (e.g., Ni, Pt, Au), semiconducting (e.g., Si, InP, GaN, etc.), and insulating (e.g., SiO2, TiO2). Molecular nanowires are composed of repeating molecular units either organic (e.g. DNA) or inorganic (e.g. Mo6S9-xIx).