Introduction to Nanoelectronics Marc Baldo MIT OpenCourseWare Publication May 2011
... the „bottom up‟ – starting with quantum mechanical descriptions of atoms and molecules, and ending up with device-scale current-voltage characteristics. Although I did not understand the details at the time, it was clear to me that this approach promised a new approach to teaching electronic devices ...
... the „bottom up‟ – starting with quantum mechanical descriptions of atoms and molecules, and ending up with device-scale current-voltage characteristics. Although I did not understand the details at the time, it was clear to me that this approach promised a new approach to teaching electronic devices ...
Mark Tuominen
... Short biography: Dr. Tuominen is a professor of Physics at the University of Massachusetts Amherst. He is also director of the National Nanomanufacturing Network and co-director of the NSF Center for Hierarchical Manufacturing. His current research includes nanomanufacturing, nanoscale magnetism, su ...
... Short biography: Dr. Tuominen is a professor of Physics at the University of Massachusetts Amherst. He is also director of the National Nanomanufacturing Network and co-director of the NSF Center for Hierarchical Manufacturing. His current research includes nanomanufacturing, nanoscale magnetism, su ...
Noise Properties of a Cavity Between two QPC`s
... below 50Hz. Our results show that the GaN nanowires also exhibit the 1/f-like excess noise. We also note that the 1/f noise of the nanowires exists in a lower frequency range than that of the carbon nanotubes. ...
... below 50Hz. Our results show that the GaN nanowires also exhibit the 1/f-like excess noise. We also note that the 1/f noise of the nanowires exists in a lower frequency range than that of the carbon nanotubes. ...
Temperature control of electromigration to form gold nanogap
... then TJ = PL2 / 4V 艋 290 K; which is still low enough to allow the study of many molecular adsorbates without desorption or dissociation of the molecules. We now discuss why the feedback process is feasible. The thermal time constant11 th = L2C p / 2, where C p is the specific heat, and is th ...
... then TJ = PL2 / 4V 艋 290 K; which is still low enough to allow the study of many molecular adsorbates without desorption or dissociation of the molecules. We now discuss why the feedback process is feasible. The thermal time constant11 th = L2C p / 2, where C p is the specific heat, and is th ...
A synergistic effect between layer surface configurations and K ions
... which was due to the irreversible formation of u-Li3V2O5 at a voltage lower than 1.9 V.38 The CV curve of KV3O8 nanowires has a pair of redox peaks, namely 2.33 V and 2.84 V (Fig. S2b†). The corresponding charge–discharge curves of KV3O8 nanowires show that the rst and second cycles are similar exc ...
... which was due to the irreversible formation of u-Li3V2O5 at a voltage lower than 1.9 V.38 The CV curve of KV3O8 nanowires has a pair of redox peaks, namely 2.33 V and 2.84 V (Fig. S2b†). The corresponding charge–discharge curves of KV3O8 nanowires show that the rst and second cycles are similar exc ...
Quantum plasmonics
... electromagnetic excitations coupled to electron charge density waves on metal– dielectric interfaces or localized on metallic nanostructures enable the confinement of light to scales far below that of conventional optics; suffer from large losses Quantum plasmonics build devices that can exploit los ...
... electromagnetic excitations coupled to electron charge density waves on metal– dielectric interfaces or localized on metallic nanostructures enable the confinement of light to scales far below that of conventional optics; suffer from large losses Quantum plasmonics build devices that can exploit los ...
Part III
... Optical properties of quantum dot systems Excitons in bulk semiconductors An e-h pair bound by Coulomb potential H-atom like states of exciton in effective-mass approximation: ...
... Optical properties of quantum dot systems Excitons in bulk semiconductors An e-h pair bound by Coulomb potential H-atom like states of exciton in effective-mass approximation: ...
Document
... Optical properties of quantum dot systems Excitons in bulk semiconductors An e-h pair bound by Coulomb potential H-atom like states of exciton in effective-mass approximation: ...
... Optical properties of quantum dot systems Excitons in bulk semiconductors An e-h pair bound by Coulomb potential H-atom like states of exciton in effective-mass approximation: ...
Venkata
... • Currently wires are made out of silicon and other materials that are ~ 15nm in diameter • These are itsy bitsy wires enabling high density • They have high resistance; hence limited speed • Nanowires are only a few atoms wide; have been fabricated in many labs • Two crossing nanowires form a switc ...
... • Currently wires are made out of silicon and other materials that are ~ 15nm in diameter • These are itsy bitsy wires enabling high density • They have high resistance; hence limited speed • Nanowires are only a few atoms wide; have been fabricated in many labs • Two crossing nanowires form a switc ...
PL-sp06-m14-Mesoscale
... An intermediate scale, on the order of ~10 nm, Materials have some properties of bulk material, But surface effects are important, And more quantum phenomena become important ...
... An intermediate scale, on the order of ~10 nm, Materials have some properties of bulk material, But surface effects are important, And more quantum phenomena become important ...
Document
... Definition: a set of methods and techniques providing the fabrication of structures consisting of individual atoms, molecules or macromolecular blocks in the length scale of approximately 1 – 100 nm. It is applied to physical, chemical and biological systems in order to explore their novel and diffe ...
... Definition: a set of methods and techniques providing the fabrication of structures consisting of individual atoms, molecules or macromolecular blocks in the length scale of approximately 1 – 100 nm. It is applied to physical, chemical and biological systems in order to explore their novel and diffe ...
PowerPoint 프레젠테이션
... thermal expansion characteristics of gallium--which exists as a liquid over a wider temperature range (30 to 2,403 °C) than most metals--by heating the filled nanotubes in a transmission electron microscope (TEM). They found that the volume of nanocolumns of gallium varies linearly with temperature ...
... thermal expansion characteristics of gallium--which exists as a liquid over a wider temperature range (30 to 2,403 °C) than most metals--by heating the filled nanotubes in a transmission electron microscope (TEM). They found that the volume of nanocolumns of gallium varies linearly with temperature ...
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... electrothermal simulation. Additionally, we corroborated this measurement by comparing the DDE of the 8-*SNAP to a standard, single-nanowire, 50 nm wide SNSPD. Above the normalized bias current of 0.78, the DDE curves of the 8-*SNAP overlapped with the curve of the SNSPD as expected from single phot ...
... electrothermal simulation. Additionally, we corroborated this measurement by comparing the DDE of the 8-*SNAP to a standard, single-nanowire, 50 nm wide SNSPD. Above the normalized bias current of 0.78, the DDE curves of the 8-*SNAP overlapped with the curve of the SNSPD as expected from single phot ...
Free-electron Model for Mesoscopic Force Fluctuations in Nanowires
... The electrical conductance through a narrow constriction with a diameter of the order of the electron wavelength is quantized in units of G0 = 2e2 /h1,2 . Such conductance quantization is observed at low temperatures in semiconductor devices containing a two-dimensional electron gas (2DEG)3,4 . Simi ...
... The electrical conductance through a narrow constriction with a diameter of the order of the electron wavelength is quantized in units of G0 = 2e2 /h1,2 . Such conductance quantization is observed at low temperatures in semiconductor devices containing a two-dimensional electron gas (2DEG)3,4 . Simi ...
Room temperature hydrogen sensors based on metal decorated
... processed WO3 nanowires decorated with PdO or PtOx nanoparticles are discussed. Most of the work is focused on evaluating the sensitivity of the prepared sensors: S = (G − G0 )/(G0 c) × 100%, where G and G0 are the conductance of the sensor before and after gas exposure, respectively, and c is the g ...
... processed WO3 nanowires decorated with PdO or PtOx nanoparticles are discussed. Most of the work is focused on evaluating the sensitivity of the prepared sensors: S = (G − G0 )/(G0 c) × 100%, where G and G0 are the conductance of the sensor before and after gas exposure, respectively, and c is the g ...
CALL FOR PAPERS Journal of Nanomaterials Special Issue on
... Due to their interesting electrical, chemical, magnetic, optical, and mechanical properties, low-dimensional (1D and 2D) nanomaterials, such as carbon nanotubes, metallic/semiconductor nanowires, and graphene/molybdenum disulfide (MoS2) atomic layers, have been extensively investigated in the past d ...
... Due to their interesting electrical, chemical, magnetic, optical, and mechanical properties, low-dimensional (1D and 2D) nanomaterials, such as carbon nanotubes, metallic/semiconductor nanowires, and graphene/molybdenum disulfide (MoS2) atomic layers, have been extensively investigated in the past d ...
Follow up to “Pirates of Silicon Valley”
... It’s the second most abundant element in the earth’s crust, surpassed only by oxygen. Sand and almost all rocks contain silicon combined with oxygen, forming silica. Silicon is the basic material used to make computer chips, transistors, silicon diodes and other electronic circuits and switching dev ...
... It’s the second most abundant element in the earth’s crust, surpassed only by oxygen. Sand and almost all rocks contain silicon combined with oxygen, forming silica. Silicon is the basic material used to make computer chips, transistors, silicon diodes and other electronic circuits and switching dev ...
Nanowires for Quantum Optics - Leo Kouwenhoven
... dots defined with hetero-material structures are presented as well as a novel type of quantum dot defined by the crystal phase of the semiconductor. We demonstrate the possibility of electrically addressing a single quantum dot with photocurrent and perform electroluminescence measurements on a sing ...
... dots defined with hetero-material structures are presented as well as a novel type of quantum dot defined by the crystal phase of the semiconductor. We demonstrate the possibility of electrically addressing a single quantum dot with photocurrent and perform electroluminescence measurements on a sing ...
Quantum Mechanical Modeling of Electron
... Quantum transport approach based on nonequilibrium Green’s function (NEGF) method has been widely used to study electrical properties of electronic devices [3–8]. Taking into account electronphoton interactions, the approach provides an efficient and versatile way to describe the coupled optical elect ...
... Quantum transport approach based on nonequilibrium Green’s function (NEGF) method has been widely used to study electrical properties of electronic devices [3–8]. Taking into account electronphoton interactions, the approach provides an efficient and versatile way to describe the coupled optical elect ...
Ultra-Low Contact Resistance of Epitaxially
... contact connections is likely to yield extremely low contact resistance in Si nanobridges. The methodology adopted for extracting the contact resistance of bridged Si nanowires benefits from their unique growth process which allows for in-circuit measurements. This is unlike the commonly adopted tec ...
... contact connections is likely to yield extremely low contact resistance in Si nanobridges. The methodology adopted for extracting the contact resistance of bridged Si nanowires benefits from their unique growth process which allows for in-circuit measurements. This is unlike the commonly adopted tec ...
Chapter 6 Bulk Nanostructured Materials
... • 2. Ball milling to form Fe85Cu15 particles • 3. Compacted using a tungsten-carbide at 1GPa for 24 h ...
... • 2. Ball milling to form Fe85Cu15 particles • 3. Compacted using a tungsten-carbide at 1GPa for 24 h ...
Interfacial Forces in Active Nanodevices
... The density contours below show the decrease in contact angle as the number of charges and the associated voltage increase. The charge remains highly localized at the surface of the insulator. The Young-Lippmann equation describes the changes in q in these nanoscale drops. As in macroscopic experime ...
... The density contours below show the decrease in contact angle as the number of charges and the associated voltage increase. The charge remains highly localized at the surface of the insulator. The Young-Lippmann equation describes the changes in q in these nanoscale drops. As in macroscopic experime ...
Nanowire
A nanowire is a nanostructure, with the diameter of the order of a nanometer (10−9 meters). It can also be defined as the ratio of the length to width being greater than 1000. Alternatively, nanowires can be defined as structures that have a thickness or diameter constrained to tens of nanometers or less and an unconstrained length. At these scales, quantum mechanical effects are important — which coined the term ""quantum wires"". Many different types of nanowires exist, including superconducting (e.g., YBCO), metallic (e.g., Ni, Pt, Au), semiconducting (e.g., Si, InP, GaN, etc.), and insulating (e.g., SiO2, TiO2). Molecular nanowires are composed of repeating molecular units either organic (e.g. DNA) or inorganic (e.g. Mo6S9-xIx).