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Electrostatically Formed Nanowires: a Platform for Sensors, Transistors and Electronic Devices Prof. Yossi Rosenwaks Faculty of Engineering, Tel-Aviv University Email: [email protected] Abstract As transistors dimensions are to reach their fundamental limit in around 2025, new design concepts are a subject of utmost importance. We present here a new paradigm in nanowire based devices termed Electrostatically Formed Nanowires (EFN). We demonstrate its application as a gas sensor, and multiple state transistor. We show that the EFN can function as an extremely sensitive molecular and temperature sensor, and in various electronic applicatios. Figure 1: Schematic illustration of an EFN device. (a) Different contact regions and the channel region are defined by specific doping implants, assigned with n+, n, and p+. A thermal SiO2 layer with a thickness of 6 nm covers the active sensing area. The EFN device is biased according to the electrical circuit. (b) Schematic cross-section along the y-axis of the device showing one possible configuration of the electrostatically shaped nanowire with a volatile organic compound (ethanol) bound to the active area of the device. Short Biography Prof. Yossi Rosenwaks, Dean of the Faculty of Engineering, and the head of Tel Aviv University’s Center for Renewable Energy, has been a professor of electrical engineering at TAU since 2005 after joining the faculty in 1996. He served as the president of the Israel Vacuum Society (2003-2006), and as the director of TAU’s Wolfson Center for Applied Materials Research and Gordon Center for Energy Studies (2005-2008), and the head of the Physical Electronics department 2011-4. Prof. Rosenwaks leads a research group of 10 graduate students and scientists, and his current research interests include nanoscale electrical measurements using mainly Kelvin probe force microscopy, nanowire transistors and sensors, charge carrier dynamics and transport in semiconductors, and Kelvin probe microscopy of 2D materials.