Download JANTXV1N5649A I-V Report

Document #
LAT-TD-05747-1
Author(s)
Date effective
19 APRIL 04
Supersedes
Gunther Haller
Subsystem/Office
Electronics & DAQ Subsystem
Document Title
Standby Current Test for JANTXV5649A Microsemi Transient Voltage
Suppressor
Hard copies of this document are for REFERENCE ONLY and should not be considered the latest
revision.
Standby Current Test for JANTXV5649A Microsemi Transient Voltage Suppressor
CHANGE HISTORY LOG
Revision
Effective Date
Description of Changes
Hard copies of this document are for REFERENCE ONLY and should not be considered the latest
revision.
LAT-TD-05747-01
Page 2
Standby Current Test for JANTXV5649A Microsemi Transient Voltage Suppressor
Table of Contents -TOC
1.
SCOPE .......................................................................................................................................... 4
2.
Environmental condition ............................................................................................................... 4
3.
Caution .......................................................................................................................................... 4
4.
Notes ............................................................................................................................................. 4
5.
REFERENCES ............................................................................................................................. 5
5.1
6.
7.
Applicable Documents .......................................................................................................... 5
TEST setup.................................................................................................................................... 6
6.1
Test Equipment ..................................................................................................................... 6
6.2
Test Setup.............................................................................................................................. 7
Appendix A (Data Sheets and Covers) ......................................................................................... 9
7.1
COVER SHEET.................................................................................................................. 10
7.2
Test Overview and Important Measurement Comments .................................................... 12
7.3
Current versus Voltage Curves ........................................................................................... 13
Hard copies of this document are for REFERENCE ONLY and should not be considered the latest revision.
LAT-TD-05747
Page 3
Standby Current Test for JANTXV5649A Microsemi Transient Voltage Suppressor
1.
SCOPE
In this document the test-circuit and test-results are described for measuring the current as a function
of voltage for MICROSEMI JANTXV5649A Transient Voltage Suppressor diodes.
2.
ENVIRONMENTAL CONDITION
All measurements are performed at room-temperature in SLAC Building 33, clean-room.
3.
CAUTION
1) In order to not take a chance damaging the transient suppressor device, the current must be
limited by the measuring circuit if DC voltages over the break-down voltage are applied.
The device is an AC voltage surge protector.
4.
NOTES
1) The stand-off voltage for the 1N5649A device is 40.2V. In GLAST LAT operation the
nominal voltage applied to the diode is +28V +/- 1V. The device is used to suppress
transient voltage spikes. The maximum voltage the diode needs to with-stand is 40V DC.
The 40-V voltage limit is not tested at the instrument level but the effect needs to be
investigated by analysis. (The 28V is generated via a DC/DC converter and is regulated.)
2) The maximum stand-off current according to the Microsemi data-sheet is 5 uA at 40.2V at
room-temperature.
3) The voltage at which the junction breaks down is specified to be between 44.7V and 49.4V
at 1 mA, well above the 40V maximum theoretical LAT voltage.
Hard copies of this document are for REFERENCE ONLY and should not be considered the latest revision.
LAT-TD-05747
Page 4
Standby Current Test for JANTXV5649A Microsemi Transient Voltage Suppressor
5.
REFERENCES
The list below provides documents that are to be used as references for this procedure:
5.1
Applicable Documents
Document Number
Microsemi 1N5629 thru 1N5665A Data-Sheet
Description
Data-Sheet
Hard copies of this document are for REFERENCE ONLY and should not be considered the latest revision.
LAT-TD-05747
Page 5
Standby Current Test for JANTXV5649A Microsemi Transient Voltage Suppressor
6.
TEST SETUP
6.1
Test Equipment
The list below indicates the equipment that is used in the test setup:
Type
Manufacturer/Model/ID Number
Power Supply PS A
Power Design TP1800 SLAC GLAST ID GLAT 1037
Resistor R1
1 kohm, 5%, 1/8 W
DVM A for V Measurement
Meterman 38XR SLAC GLAST ID GLAT 1069
DVM B for I measurement
Meterman 38XR SLAC GLAST ID GLAT 1075
Hard copies of this document are for REFERENCE ONLY and should not be considered the latest revision.
LAT-TD-05747
Page 6
Standby Current Test for JANTXV5649A Microsemi Transient Voltage Suppressor
6.2
Test Setup
R1, 1Kohm
DVM A, Current
PS A
DVM B,
Device
Voltage
Under
Test
Figure 1. Test setup. One set of measurements are performed with R1 included, the second with R1
removed after determination of the approximate break-down voltage
Hard copies of this document are for REFERENCE ONLY and should not be considered the latest revision.
LAT-TD-05747
Page 7
Standby Current Test for JANTXV5649A Microsemi Transient Voltage Suppressor
Hard copies of this document are for REFERENCE ONLY and should not be considered the latest revision.
LAT-TD-05747
Page 8
Standby Current Test for JANTXV5649A Microsemi Transient Voltage Suppressor
7.
APPENDIX A (DATA SHEETS AND COVERS)
Hard copies of this document are for REFERENCE ONLY and should not be considered the latest revision.
LAT-TD-05747
Page 9
Standby Current Test for JANTXV5649A Microsemi Transient Voltage Suppressor
7.1
COVER SHEET
Program:
Procedure Number:
GLAST
LAT-TD-5747-1
Procedure Title: Standby Current Test for JANTXV5649A Microsemi
Transient Voltage Suppressor
Unit Date-Code:
D/C 0235B
REVIEWED AND APPROVED BY THE FOLLOWING:
Responsible Engineer:
Test Operator:
Quality Assurance:
Gunther Haller EE
Date: Feb 1, 05
Patrick Young EE
Date: Feb 1. 05
YC Liew QA
Date: Feb 1, 05
(Electronics Signatures)
Hard copies of this document are for REFERENCE ONLY and should not be considered the latest revision.
LAT-TD-05747
Page 10
Standby Current Test for JANTXV5649A Microsemi Transient Voltage Suppressor
Hard copies of this document are for REFERENCE ONLY and should not be considered the latest revision.
LAT-TD-05747
Page 11
Standby Current Test for JANTXV5649A Microsemi Transient Voltage Suppressor
7.2
Test Overview and Important Measurement Comments
In order to first confirm that the break-down voltage is not less than 44.7V in our test-setup, R1 in
the test-setup is used to limit the current. (to be accurate we only determine the approximate breakdown voltage, since the precious voltage is to me measured with a 1 mA current). After the
approximate break-down voltage and the I versus V curve below the break-down voltage has been
established, the resistor R1 is removed and the stand-by current at 40.2V is measured The latter
measurement is only performed to eliminate any concerns that R1 would influence the stand-by
current measurement (which is does not as expected).
Three diodes from lot D/C 0235B are tested.
The voltage applied to the diode is measured with DVM B and from the reading of the power-supply
because of the voltage drop over R1.
A cross-check at a current of about 100uA thru the diode shows about a 100 mV drop over R1, as
expected.
The current meter DVM A is connected after DVM B in order to not get a false measurement from
the current flowing thru DVM B, the voltage meter.
It was confirmed that the voltage drop over the current meter DVM A is negligible (less than
resolution of DVM B voltage reading).
The voltage applied to the diodes start at 40V or less and are incrementally increased to 47V.
First all measurements with R1 included in the circuit are performed for D1, then D2, then D3. After
that R1 is removed and the stand-by current is confirmed for each diode at 40.2V.
These measurements are not meant to confirm the manufactures specification of the exact breakdown voltage of at least 44.7V, since we do not inject a 1 mA constant current. (Although the breakdown voltage is still approximate correct)
Hard copies of this document are for REFERENCE ONLY and should not be considered the latest revision.
LAT-TD-05747
Page 12
Standby Current Test for JANTXV5649A Microsemi Transient Voltage Suppressor
7.3
Current versus Voltage Curves
(for the first diode the V started at lower V to make sure the diode/circuit performs as expected. For
the other diodes only voltage settings around the interesting regions are used.)
Voltage at TP1 Current D1
With R1
10V
0.05 uA
30V
0.05 uA
40V
0.06 uA
40.2V
0.06 uA
45V
0.08 uA
46V
0.13 uA
46.2V
0.14 uA
46.3V
0.21 uA
46.4V
2.55 uA
46.5V
42 uA
46.6V
46.7V
46.8V
46.9V
47V
47.05V
Current D2 Current D3 Current D1 Current D1 Current D3
With R1
With R1
Without R1 Without R1 Without R1
0.05 uA
0.06 uA
0.06 uA
0.09 uA
0.14 uA
0.08 uA
0.22 uA
0.09 uA
0.10 uA
0.44 uA
22 uA
117 uA
0.7 uA
73 uA
110 uA
0.05 uA
0.04 uA
Result:
Diodes meet manufacturers specification in respect to stand-by currents being less than 5 uA
at 40.2V with large margin (factor of about 100 at RT).
The device breaks down at between 46.3V and 47V, about in the middle of the manufactures
specification of between 44.7V and 49.4V.
The diode meets the stand-by current specification quoted in the data-sheet.
Hard copies of this document are for REFERENCE ONLY and should not be considered the latest revision.
LAT-TD-05747
Page 13