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Download 2 – 6 GHz Gain block Amplifier - Aelius Semiconductors Pte. Ltd.
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ASL 4031 2 – 6 GHz Gain block Amplifier Features Functional Diagram Frequency Range : 2 – 6GHz 23 dBm output P1dB @ Vd = 8V 13 dB Power gain @ Vd = 8V 30% PAE High IP3 Self bias operation No external matching required DC decoupled input and output 0.25 µm InGaAs pHEMT Technology Chip dimension: 1.3 x 1.9 x 0.1 mm Vd RF Out RF In Typical Applications RADAR Military & space LMDS, VSAT Description The ASL4031 is a C-band Gain block amplifier with 23dBm power output. The PA operates in 2 – 6 GHz frequency range. The PA features 13dB of small signal gain and it has a high IP3 of 33dBm and 30% PAE. This feature enables it to be used in the applications requiring efficiency along with linearity. The chip operates with single bias supply voltage. The die is fabricated using a reliable 0.25µm InGaAs pHEMT technology. The Circuit grounds are provided through vias to the backside metallization. Absolute Maximum Ratings (1) Parameter Drain bias voltage (Vd) RF input power (RFin at Vd=8V) Operating temperature Storage Temperature Absolute Maximum Units +9 23 -50 to +85 -65 to +150 volts dBm o C o C 1. Operation beyond these limits may cause permanent damage to the component Aelius Semiconductors Pte. Ltd., Singapore Phone: +65.63361025 Fax: +65.63360650 Page 1 of 7 Email: [email protected] URL: www.aeliussemi.com ASL 4031 Electrical Specifications (1) @ TA = 25 oC, Vd = 8V, Zo =50 Parameter Typ. Units 2–6 GHz 13 dB +/-0.75 dB Output Power (P1 dB) 23 dBm Input Return Loss 9 dB Output Return Loss 13 dB Saturated output power (Psat) 24 dBm Output Third Order Intercept (IP3) 33 dBm Power Added Efficiency (PAE) 30% -- Supply Current (@ Vd=8V / Vd=5V) 90 / 87 mA Frequency Range Gain Gain Flatness Note: 1. Electrical specifications as measured in test fixture. Aelius Semiconductors Pte. Ltd., Singapore Phone: +65.63361025 Fax: +65.63360650 Page 2 of 7 Email: [email protected] URL: www.aeliussemi.com ASL 4031 Test fixture data Vd = Vd V, Current (Id@Vd=8V) = 90mA, Current (Id@Vd=5V) = 87mA, TA = 25 oC Gain 25 S21 (dB) 20 Vd = 5V 15 Vd = 8V 10 DB(|S(2,1)|) 2123042 at 5V Operation 5 DB(|S(2,1)|) 2123042 at 8V Operation 0 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 Frequency (GHz) 6 6.5 7 7.5 8 Aelius Semiconductors Pte. Ltd., Singapore Phone: +65.63361025 Fax: +65.63360650 Page 3 of 7 Email: [email protected] URL: www.aeliussemi.com ASL 4031 Test fixture data Vd = Vd V, Current (Id@Vd=8V) = 90mA, Current (Id@Vd=5V) = 87mA, TA = 25 oC Aelius Semiconductors Pte. Ltd., Singapore Phone: +65.63361025 Fax: +65.63360650 Page 4 of 7 Email: [email protected] URL: www.aeliussemi.com ASL 4031 Test fixture data Vd = Vd V, Current (Id@Vd=8V) = 90mA, Current (Id@Vd=5V) = 87mA, TA = 25 oC Isolation -15 Vd = 5V -20 S12 (dB) Vd = 8V -25 -30 DB(|S(1,2)|) 2123042 at 5V Operation DB(|S(1,2)|) 2123042 at 8V Operation -35 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 Frequency (GHz) 6 6.5 7 7.5 8 Aelius Semiconductors Pte. Ltd., Singapore Phone: +65.63361025 Fax: +65.63360650 Page 5 of 7 Email: [email protected] URL: www.aeliussemi.com ASL 4031 Bond Pad Locations Units: millimeters Note: 1. All RF and DC bond pads are 100µm x 100µm 2. Pad no. 1 : RF IN 3. Pad no. 2 : Drain voltage(Vd) 4. Pad no. 4 : RF Output 5. Pad no. 5 : Source bypass capacitor (100pF) Aelius Semiconductors Pte. Ltd., Singapore Phone: +65.63361025 Fax: +65.63360650 Page 6 of 7 Email: [email protected] URL: www.aeliussemi.com ASL 4031 Recommended Assembly Diagram Note: 1. 2. 3. 4. 5. 6. Two 1 mil (0.0254mm) bond wires of minimum length should be used for RF input and output. Two 1 mil (0.0254mm) bond wires of minimum length should be used from chip bond pad to 100pF single layer bypass capacitors. Input and output 50 ohm lines are on 5 mil RT Duroid substrate. 0.1µF capacitor may be additionally used as a second level of bypass at drain for reliable operation (apart from 100pF SL bypass capacitor). The RF input & output ports are DC decoupled on-chip. Proper heat sink like Copper tungsten or copper molybdenum to be used for better reliability of chip. Die attach: For Epoxy attachment, use of a two-component conductive epoxy is recommended. An epoxy fillet should be visible around the total die periphery. If Eutectic attachment is preferred, use of fluxless AuSn (80/20) 1-2 mil thick preform solder is recommended. Use of AuGe preform should be strictly avoided. Wire bonding: For DC pad connections use either ball or wedge bonds. For best RF performance, use of 150 - 200µm length of wedge bonds is advised. Single Ball bonds of 250-300µm though acceptable, may cause a deviation in RF performance. GaAs MMIC devices are susceptible to Electrostatic discharge. Proper precautions should be observed during handling, assembly & testing All information and Specifications are subject to change without prior notice Aelius Semiconductors Pte. Ltd., Singapore Phone: +65.63361025 Fax: +65.63360650 Page 7 of 7 Email: [email protected] URL: www.aeliussemi.com