Download DC-10GHz Non-Reflective SPDT Switch

ASL 8004
DC-10GHz Non-Reflective SPDT Switch
Features
DC-10GHz Wide band operation
Low Insertion Loss < 2.6 dB @10GHz
High Isolation > 42 dB
I/O VSWR < 1. 9 : 1
P1dB (in):21dBm
Chip size:2.2 mm X 1.73 mm X 0.1 mm
CNTRL
+5v
-5v
RF_OUT2
RF_OUT1
RF_IN
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Functional Diagram
Functional Diagram
Typical Applications
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Military & Space
Test Equipments
Microwave Radio, RADAR
Broadband Telecom
Description
The ASL8004 is a wideband Reflective single-pole; double throw (SPDT) MMIC chip covering DC
to 10GHz. The switch can be operated either in reflective or absorptive mode by grounding the
appropriate pad on the die. The Switch features greater than 40 dB Isolation and less than 2.3 dB
Insertion Loss in the reflective mode of operation and in the non-reflective configuration, the
isolation is >35 dB with the insertion loss less than 2.5 dB up to 10GHz. The Switch offers a high
speed switching due to the presence of an on-chip TTL Driver. The input power for 1dB gain
compression is 21dBm at midband. The switch operates on +5V/-5V supplies with minimal DC
power consumption and is controlled using TTL compatible voltage levels. The die is fabricated
using a robust 0.5µm InGaAs pHEMT technology.
Absolute Maximum Ratings (1)
Parameter
RF input Power (common Port)
RF input Power (Toggle ports)
Positive supply Voltage
Negative supply voltage
Control voltage
Operating Temperature
Absolute Maximum
25
25
+6
-6
-0.5 to +5.5
-55 to +85
Units
dBm
dBm
V
V
V
°C
Storage Temperature
-65 to +150
°C
1. Operation beyond these limits may cause permanent damage to the component
Aelius Semiconductors Pte. Ltd., Singapore
Phone : +65.63361025
Fax : +65.63360650
Page 1 of 7
Email: [email protected]
URL: www.aeliussemi.com
ASL 8004
Electrical Specifications @ TA = 25 oC, Zo =50 
Parameter
Frequency
Typ.
DC-10
Units
GHz
Reflective mode
2.3
dB
Absorptive mode
2.5
dB
Reflective mode
40
dB
Absorptive mode
35
dB
Reflective mode
10
dB
Absorptive mode
10
dB
DC-10GHz
21
dBm
+5, -5
V
Control Voltage
0/+5
V
Switching Speed
10
ns
Insertion Loss (max.)
Isolation (min.)
Return Loss
Input Power for 1dB
Compression
Driver Bias Voltages
Note:
1. The above mentioned electrical specifications are measured in 50ohm line test fixture.
2. The RF input & output ports are DC coupled.
3. For reliable operation external DC blocking capacitors are required at the RF input &
output ports.
Aelius Semiconductors Pte. Ltd., Singapore
Phone : +65.63361025
Fax : +65.63360650
Page 2 of 7
Email: [email protected]
URL: www.aeliussemi.com
ASL 8004
Test fixture data
Driver Bias +5V,-5V; Control 0/+5V; TA = 25 oC
Insertion loss
0
-0.5
-1
Reflective
-1.5
-2
-2.5
-3
-3.5
Absorptive
-4
-4.5
-5
0.01
2.01
4.01
6.01
8.01
Frequency (GHz)
10.01
12
Isolation
0
-10
-20
Absorptive
-30
-40
-50
Reflective
-60
-70
-80
0.01
2.01
4.01
6.01
Frequency (GHz)
8.01
10
Aelius Semiconductors Pte. Ltd., Singapore
Phone : +65.63361025
Fax : +65.63360650
Page 3 of 7
Email: [email protected]
URL: www.aeliussemi.com
ASL 8004
Test fixture data
Driver Bias +5V,-5V; Control 0/+5V; TA = 25 oC
Input Return Loss
0
-5
Absorptive
-10
-15
-20
Reflective
-25
0.01
2.01
4.01
6.01
Frequency (GHz)
8.01
10.01
12
Output Return Loss
0
Absorptive
-10
-20
Reflective
-30
-40
0.01
2.01
4.01
6.01
Frequency (GHz)
8.01
10.01
12
Aelius Semiconductors Pte. Ltd., Singapore
Phone : +65.63361025
Fax : +65.63360650
Page 4 of 7
Email: [email protected]
URL: www.aeliussemi.com
ASL 8004
Truth Table
Control Voltage
State
Bias condition
Low “0”
0 to 0.5 V
High “1”
3.3 V to 5.0 V
RF1
RF_In
RF2
Ctrl_vol
RF_In to RF1
RF_In to RF2
0(Low)
Off
On
1(High)
On
Off
Aelius Semiconductors Pte. Ltd., Singapore
Phone : +65.63361025
Fax : +65.63360650
Page 5 of 7
Email: [email protected]
URL: www.aeliussemi.com
ASL 8004
+5 V
5
1.73 [0.068]
6
GND-T GND-R
GND
0.07 [0.003]
0.86 [0.034]
0.07 [0.003]
1.87 [0.074]
V_CTRL
4
RF_OUT1
3
1.56 [0.061]
1.71 [0.067]
1.02 [0.040]
2
1.02 [0.040]
1.17 [0.046]
0.50 [0.020]
Mechanical Characteristics
GND
GND
1
RF IN
GND
7
2.20 [0.087]
8
GND
1.56 [0.061]
1.71 [0.067]
1.86 [0.073]
9
1.18 [0.046]
0.78 [0.031]
10
GND-T GND-R
1.02 [0.040]
-5 V
RF_OUT2
GND
Units: millimeters [inches]
Note:
1. All RF and DC bond pads are 100µm x 100µm
2. Pad no. 1
: RF_In
3. Pad no. 2
: Control Voltage
4. Pad no. 3
: +5 V
5. Pad no. 4,9 : GND Terminative
6. Pad no. 5,8 : GND Reflective
7. Pad no. 6
: RF_Out 1
8. Pad no. 7
: RF_Out 2
Aelius Semiconductors Pte. Ltd., Singapore
Phone : +65.63361025
Fax : +65.63360650
Page 6 of 7
Email: [email protected]
URL: www.aeliussemi.com
ASL 8004
Recommended Assembly Diagram
50ohm line
+5V
2
3
V_CTRL
+5 V
4
5
6
GND-T GND-R
GND
RF_OUT1
Control
Volatge
GND
GND
1 RF IN
GND
GND
-5 V
10
GND-T GND-R
9
8
RF_OUT2
50ohm line
GND
7
-5V
50ohm line
Note:
1. To operate the switch in Absorptive mode, pad nos. 4 & 9 need to be grounded.
2. To operate the switch in Reflective mode, pad nos. 5 & 8 need to be grounded.
3. Two one mil (0.0254mm) bond wires of maximum length of 250microns should be
used for RF input and output.
4. The RF input & output are DC Coupled lines.
5. 0.1 µF capacitors may be additionally used as a bypass for reliable operation at the
power supplies.
6. Input and output 50 ohm lines are on either 5mil or 10mil Alumina or RT Duroid
substrate.
Die attach: For Epoxy attachment, use of a two-component conductive epoxy is recommended. An
epoxy fillet should be visible around the total die periphery. If Eutectic attachment is preferred, use of
fluxless AuSn (80/20) 1-2 mil thick preform solder is recommended. Use of AuGe preform should be
strictly avoided.
Wire bonding: For DC pad connections use either ball or wedge bonds. For best RF performance,
use of 150 - 200µm length of wedge bonds is advised. Single Ball bonds of 250-300µm though
acceptable, may cause a deviation in RF performance.
GaAs MMIC devices are susceptible to Electrostatic discharge.
Proper precautions should be observed during handling,
assembly & testing
All information and Specifications are subject to change without prior notice
Aelius Semiconductors Pte. Ltd., Singapore
Phone : +65.63361025
Fax : +65.63360650
Page 7 of 7
Email: [email protected]
URL: www.aeliussemi.com