Download RM13N600T2

RM13N600T2
13Amps 600V N-Channel Power MOSFET
TO-220C
Features
13A, 600V, RDSON=0.38Ω(MAX) @VGS=10V
Ultra low gate charge(typical 21nC)
Low Reverse transfer capacitance (Crss typical 5.5pF)
Fast switching capability
G
100% avalanche energy specified
Improved dv/dt capability,high ruggedness
General Description
Package: TO-220C
This advanced technology has been especially tailored to minimize on-state resistance,
provide superior switching performance,and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high efficiency switch mode power
supply.
Absolute Maximum Ratings
Symbol
VDSS
ID
Parameter
Spec
Units
Drain-Source Voltage
600
V
Drain Current -Continuous(Tc=25ć)
11
A
-Continuous(Tc=100ć)
7
A
IDM
Drain Current -Pulsed
33
A
IAR
Avalanche Current
1.6
A
VGSS
Gate-Source Voltage
±30
V
EAS
Single Pulsed Avalanche Energy
211
mJ
EAR
Repetitive Avalanche Energy
0.32
mJ
PD
Power Dissipation
78
W
Tj
Junction Temperature
+150
ć
(Note1)
Topr
Operating Temperature Range
-55 to +150
ć
Tstg
Storage Temperature
-55 to +150
ć
Thermal Characteristics
Symbol
Parameter
Typ
Max
Units
RθJC
Thermal Resistance, Junction-to-Case
_
1.6
ć/W
RθJA
Thermal Resistance, Junction-to-Ambient
_
62
ć/W
2016-11
REV:O29
D
S
Electrical Characteristics(Tc=25ć unless otherwise noted)
Off Characteristics
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
VGS=0V,ID=250uA
600
_
_
V
VDS=600V,VGS=0V
_
_
1
uA
VDS=600V,Tc=125ć
_
_
100
uA
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSSF
Gate-Body Leakage Current,Forward
Vgs=30V,Vds=0V
_
_
100
nA
IGSSR
Gate-Body Leakage Current,Reverse
Vgs=-30V,Vds=0V
_
_
-100
nA
Min
Typ
Max
Units
2.5
_
4.0
V
On Characteristics
Symbol
Parameter
Test Conditions
VGSTH
Gate Threshold Voltage
VDS=VGS,ID=250uA
RDSON
Static Drain-Source On-Resistance
VGS=10V,ID=5.5A
_
0.34
0.38
Ω
Forward Transconductance
VDS=25VˈID=5.5A
_
7.8
_
S
Min
Typ
Max
Units
_
901
_
pF
_
50
_
pF
_
5.5
_
pF
Min
Typ
Max
Units
_
41
_
ns
_
20
_
ns
_
123
_
ns
_
6.4
_
ns
Gfs
Dynamic Characteristics
Symbol
Parameter
Cjss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Test Conditions
VDS=50V,VGS=0V,f=1.0MHZ
Switching Characteristics
Symbol
tdon
Parameter
Test Conditions
Turn-On Delay Time
tr
Turn-On Rise Time
tdoff
Turn-Off Delay Time
VDD=400V
ID=11A
RG=25Ω
(Note 2)
tf
Turn-Off Fall Time
Qg
Total Gate Charge
VDS=480V
_
21
_
nc
Qgs
Gate-Source Charge
ID=11A
_
4.5
_
nc
Qgd
Gate-Drain Charge
VGS=10V
_
7
_
nc
Min
Typ
Max
Units
(Note 2)
Drain-Source Diode Characteristics and Maximum Ratings
Symbol
Parameter
Test Conditions
Is
Maximum Continuous Drain-source diode forward current
_
_
9.2
A
Ism
Maximum pulsed drain-source diode diode forward current
_
_
29
A
Vsd
Drain-source diode forward Voltage
VGS=0V,IS=10A
_
0.9
1.2
V
Trr
Reverse Recovery Time
VGS=480V,IF=IS
_
280
_
ns
Qrr
Reverse Recovery charge
dif/dt=100A/us
_
2.8
_
uc
Notes:
1.Test Condition: L = 4.5mH, IAS =5.5A, VDD = 50V, RG = 25¡, Starting TJ = 25°C
2. Essentially independent of operating temperature
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RATING AND CHARACTERISTICS CURVES (RM13N600T2)
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RATING AND CHARACTERISTICS CURVES (RM13N600T2)
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Test circuits and waveforms
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Marking Description
Plant - code
Rectron Logo
Part No.
V Y W W
1 3 N 6 0 0
Year – code
(Y: Last digit of year
& A:2010,B:2011…)
Week – code
(WW: 01~52)
Voltage-code
60-----600V
Mechanical Dimensions
" " " "" " "
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specification herein, to make corrections, modifications, enhancements or other
changes. Rectron Inc or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Data sheet specifications and its information
contained are intended to provide a product description only. "Typical" parameters which may be included on RECTRON data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. Rectron Inc does not assume any liability arising out of the application or
use of any product or circuit.
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