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Download Panasonic PGA26E19BA Datasheet
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PRODUCT OVERVIEW PGA26E19BA D G 600V/190mΩ GaN Power Transistor S PGA26E19BA Product Overview Overview Panasonic’s GaN power transistors offer superior device performances enabling higher power conversion efficiency and higher power density of power electronic systems than those by conventional Si-based power devices. Features – Crystal growth of GaN on 6-inch silicon substrate. – 600V enhancement mode power switch Normally-Off operation with single GaN device by Panasonic’s proprietary GIT: Gate Injection Transistor technology. – Extremely high-speed switching characteristics. – Current Collapse Free 600V and more. – Zero recovery loss characteristics. Applications – Power supply for AC-DC (PFC, Isolated DC-DC) – Battery charger system – Photovoltaic power converter, Motor inverter Absolute Maximum Ratings (Tj=25℃, unless otherwise specified) Item Symbol Ratings Unit Drain-source voltage (DC) VDSS 600 V Drain-source voltage( pulse) VDSP 750 V Gate current( DC ) IG 19 mA Drain current (DC) (Tc=25℃) ID 13 A Junction temperature Tj 150 Storage temperature Tstg -55 to +150 ℃ Note) All conditions should be within 150℃ Tj. ℃ Thermal Characteristics (Typical values, unless otherwise specified) Item Symbol Ratings Unit Thermal resistance (junction to case) Rth(j-c) max 1.9 Thermal resistance (junction to ambient) Rth(j-a) max 46 ℃/W PD 69 Power dissipation (Tc=25℃) Publication date: Mar 2017 ℃/W W Page 1 of 2 PRODUCT OVERVIEW PGA26E19BA Electrical Characteristics (Typical values at Tj=25℃, unless otherwise specified) Item Symbol Condition Value Unit VDS=600V, VGS=0V, Tj=25℃ max39 uA VDS=600V, VGS=0V, Tj=150℃ 39 uA Drain cut-off current IDSS Gate-source leakage current IGSS VGS= -3V, VDS=0V -1 uA Gate threshold voltage VTH VDS=10V, IDS=0.9mA 1.2 V Drain-source on-state resistance RDS(on) IGS=9.2mA, IDS=5A, Tj=25℃ 140 mΩ IGS=9.2mA, IDS=5A, Tj=150℃ 290 mΩ f=100 MHz, open drain 0.8 Ω 160 pF 28 pF Gate resistance RG Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss 0.2 pF Effective output capacitance (energy related) Co(er) 33 pF Effective output capacitance (time related) Co(tr) 37 pF Gate charge Qg 2.0 nC Gate-source charge Qgs 0.3 nC Gate-drain charge Qgd 1.0 nC 1.8 V 2.6 V 0 nC 17 nC VDS=400V, VGS=0V, f=1MHz VDS=0V to 480V Gate plateau voltage Source-drain forward voltage Reverse recovery charge Output charge VDD=400V, IDS=5A Vplateau VDD=400V, IDS=5A VSD Qrr Qoss VGS=0V,ISD=5A VDS=400V, ISD=5A Package Outline Unit: mm Page 2 of 2