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Download DS9503 ESD Protection Diode with Resistors
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DS9503 DS9503 ESD Protection Diode with Resistors SPECIAL FEATURES SYMBOL AND CONVENTIONS • Zener characteristic with voltage snap–back to pro- C tect against ESD hits IC • High avalanche voltage, low leakage and low capacitance avoid signal attenuation VCA • Compatible to all 5V logic families A • Space saving, low inductance TSOC surface mount package • On–chip 5Ω resistors for isolation at both anode and cathode terminals • Industrial temperature range PACKAGE OUTLINE TSOC SURFACE MOUNT PACKAGE 3.7 X 4.0 X 1.5 mm DESCRIPTION This DS9503 is designed as an ESD protection device for 1–Wire MicroLAN interfaces. In contrast to the DS9502, the DS9503 includes two 5Ω isolation resistors on chip. Although 5Ω are negligible during communication, they represent a high impedance relative to the conducting diode during an ESD event. Thus, the diode absorbs the energy while the resistors further isolate and protect the circuit at the other side of the package. If used with circuits that already have a strong ESD– protection at their I/O port, the ESD protection level is raised to more that 27 kV (IEC 801–2 Reference model). In case of abnormal ESD hits beyond its maximum ratings the DS9503 will eventually fail “short” thus preventing further damage. During normal operation the DS9503 behaves like a regular 7.5V Zener Diode. When the voltage exceeds the trigger voltage, the I/V characteristic of the device will “snapback” allowing the same or higher amount of current to flow, but at a significantly lower voltage. As long as a minimum current or voltage is maintained, the device will stay in the “snapback mode”. If the voltage or the current falls below the holding voltage or holding current, the device will abruptly change to its normal mode and conduct only a small leakage current. 1 6 2 5 3 4 TOP VIEW SIDE VIEW ORDERING INFORMATION DS9503P 6–lead TSOC package TYPICAL APPLICATION VCC iButton PROBE I/O 1 6 µP DS9503 2 5 020998 1/3 DS9503 DC CHARACTERISTICS Figure 1 IC/A 0.5 I–TRIGGER 0.4 0.3 0.2 SEE DETAILED DRAWING 0.1 –1 1 2 3 4 5 6 7 8 VAV 9 10 VCA/V V–TRIGGER DC CHARACTERISTICS DETAIL DRAWING Figure 2 IC/A I–HOLD VCA/V V–HOLD TEST PULSE WAVEFORM Figure 3 IPP IPP = 2.0 A tr, tf = 0.1 µs td = 1 µs tr 020998 2/3 td tf DS9503 PHYSICAL SPECIFICATIONS Size Weight See mechanical drawing 0.5 grams ABSOLUTE MAXIMUM RATINGS* Operating Temperature Storage Temperature Soldering Temperature Continuous DC Current Through Package –40°C to +85°C –55°C to +125°C 260°C for 10 seconds 80 mA * This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operation sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods of time may affect reliability. ELECTRICAL CHARACTERISTICS PARAMETER Leakage Current Avalanche Voltage (–40°C to +85°C) SYMBOL MIN IL VAV TYP MAX UNITS NOTES 30 100 nA 2 7.8 V 1, 3 1 7.4 Trigger Voltage VTRIGGER 9.0 9.5 V Trigger Current ITRIGGER 600 1000 mA Holding Voltage VHOLD 5.5 V Holding Current IHOLD 30 mA 1 Forward Voltage (–10 mA) VF –0.7 –0.8 V 4 Forward Current (–0.7V) IF –10 –100 mA 4 Maximum Peak Current IPP 2.0 A 5 Maximum Continuous Current Through Diode ICC Isolation Resistance RI +80 mA Ω 5 CAPACITANCE PARAMETER (tA = 25°C) UNITS NOTES Junction Capacitance (5V) SYMBOL CJ5 MIN TYP 40 MAX pF 1 Junction Capacitance (0V) CJ0 70 pF 1 MAX UNITS NOTES THERMAL RESISTANCE PARAMETER SYMBOL MIN TYP Junction To Package RΘJC 75 K/W Junction To Ambient RΘJA 200 K/W NOTES: 1. 2. 3. 4. 5. All voltages are referenced from Cathode to Anode. At 7.0V. At 0.3 µA. Typical values at room temperature. See pulse specification. 020998 3/3