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2. Overview of Beyond CMOS Devices
2. Overview of Beyond CMOS Devices

... carriers might not have vacant states Parallel magnetizations = smaller R Anti-parallel = larger R (+) Switch magnetization for better off-current, reconfigurability. (-) For benchmarked circuits, the spin functionality not used. ...
“Reflowable” Alternative to Traditional Thermal  Protection
“Reflowable” Alternative to Traditional Thermal Protection

Schottky Barrier Diode Video Detectors Application Note 923 I. Introduction
Schottky Barrier Diode Video Detectors Application Note 923 I. Introduction

... This Application Note describes the characteristics of Hewlett-Packard Schottky Barrier Diodes intended for use in video detector or video receiver circuits, and discusses some design features of such circuits. Although a video receiver is typically 35 - 40 dB less sensitive than a heterodyne receiv ...
S-series FOUNDATION Fieldbus I/O
S-series FOUNDATION Fieldbus I/O

... separate terminal block to which the segment wires are connected. A single interface is used with the 1 wide terminal block in a simplex installation. Two H1 interfaces can be mounted in adjacent slots using the 2-wide redundant terminal block. The DeltaV controller recognizes the presence of redund ...
CBC34813-M5C - Cymbet Corporation
CBC34813-M5C - Cymbet Corporation

... 3 distinct feature groups: 1) baseline timekeeping features with 32.768 kHz oscillator and 2) advanced timekeeping features, and 3) basic power management features. Functions from each feature group may be controlled via memory mapped registers. These registers are accessed using an SPI serial inter ...
March 2015 APL Supporting Information Post
March 2015 APL Supporting Information Post

... Pre-patterned ITO-on-glass substrates (15 Ω □-1 ITO, Xin Yan Technology) were used as the substrate and electrodes of the devices. Poly-3-hexylthiophene (P3HT) (MW ~20 000, synthesised in our labs) was dissolved in CHCl3 (Sigma-Aldrich) at various concentrations and sonicated for ~1 hour or until th ...
03_ELC4345_Fall2013_MOSFET_Firing_Circuit_PPT
03_ELC4345_Fall2013_MOSFET_Firing_Circuit_PPT

... slightly touching the component, with solder at the junction • Use wood props or blue painters tape to hold components flat on the top surface while you solder the bottom side ...
Stable and efficient quantum-dot light
Stable and efficient quantum-dot light

Electronic Components
Electronic Components

... •Components are intended to be connected together, usually by soldering to a printed circuit board, to create an electronic circuit with a particular function (for example an amplifier, radio receiver, or oscillator). •Components may be packaged singly (resistor, capacitor, transistor, ...
Supplementary Information for
Supplementary Information for

... factors. First, the contact area A can be larger than that defined by the GeNW branch base due to over-coating of Ge on SiNW surface during GeNW growth. Removal of this Ge material overcoated on SiNWs during etching will lead to a longer active channel, and larger A and Cin. We note that SEM images ...
Saturation of Photodiode at High Intensity
Saturation of Photodiode at High Intensity

The course document
The course document

... Electronics – Foundation is designed for learners who have an interest in understanding the basics of electrical and electronics circuits and building projects that can be used in daily applications. It is the study of how different electronic components can be connected to perform a task. It looks ...
BUJ100LR 1. Product profile NPN power transistor
BUJ100LR 1. Product profile NPN power transistor

... Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result i ...
2. The MOSFET
2. The MOSFET

... In the first chapter we adopted a simplified picture of the Metal-OxideSemiconductor Field Effect Transistor (MOSFET) as a switch – a switch that could be turned ON and OFF by means of an electrical control voltage. Furthermore, we tried to make feasible that such a simple model is sufficient for un ...
PPT
PPT

Fieldbus Device Couplers Simplify Upgrade at
Fieldbus Device Couplers Simplify Upgrade at

... reflections and to convert the current based signals to voltage so they can be read by devices. Accordingly, ...
Old Company Name in Catalogs and Other Documents
Old Company Name in Catalogs and Other Documents

... of third parties by or arising from the use of Renesas Electronics products or technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or others. You shou ...
Ovonic Memory Switching in Multimaterial Fibers
Ovonic Memory Switching in Multimaterial Fibers

... operation (Figure 4). For comparison, we first locate the crystalline filaments in an electrically switched fiber without laser exposure (Figure 4a). A 15-cm-long GAST fiber with adjacent external connections is electrically set to the ON state (VSET = 220 V, RON ∼102 Ω). The resistance is then meas ...
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...  These digital ICs are frequently used in the computers, microprocessors, digital signal, processors, computer networks and frequency counters.  There are different types of digital Integrated Circuits.  Programmable ICs, memory chips, logic ICs, power management ICs and interface ICs. ...
AN4115, IrDA Driver and SD Card File System on MM/JE Flexis
AN4115, IrDA Driver and SD Card File System on MM/JE Flexis

... 2. Variable u8irda_tx_counter is set to zero because it will count which bit of the byte is the next to be transmitted. 3. The variable u8irda_tx_status changes to IRDA_SENDING status. 4. The modulator gate is enabled, allowing the pulses to be sent to the IRO pin. 5. The modulator period is set to ...
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No Slide Title

Bates
Bates

... Copyright © The McGraw-Hill Companies, Inc. Permission required for reproduction or display. ...
H11AA1 - Vishay
H11AA1 - Vishay

... Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use ...
FAN7080_GF085 - Half Bridge Gate Driver
FAN7080_GF085 - Half Bridge Gate Driver

... designed for high voltage and high speed driving of MOSFET or IGBT, which operates up to 600 V. Fairchild's high-voltage process and common-mode noise cancellation technique provide stable operation in the high side driver under high-dV/dt noise circumstances. An advanced level-shift circuit allows ...
Lecture 4: CMOS Gates, Capacitance, and Switch
Lecture 4: CMOS Gates, Capacitance, and Switch

... EE271 Lecture 4 ...
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Semiconductor device



Semiconductor devices are electronic components that exploit the electronic properties of semiconductor materials, principally silicon, germanium, and gallium arsenide, as well as organic semiconductors. Semiconductor devices have replaced thermionic devices (vacuum tubes) in most applications. They use electronic conduction in the solid state as opposed to the gaseous state or thermionic emission in a high vacuum.Semiconductor devices are manufactured both as single discrete devices and as integrated circuits (ICs), which consist of a number—from a few (as low as two) to billions—of devices manufactured and interconnected on a single semiconductor substrate, or wafer.Semiconductor materials are useful because their behavior can be easily manipulated by the addition of impurities, known as doping. Semiconductor conductivity can be controlled by introduction of an electric or magnetic field, by exposure to light or heat, or by mechanical deformation of a doped monocrystalline grid; thus, semiconductors can make excellent sensors. Current conduction in a semiconductor occurs via mobile or ""free"" electrons and holes, collectively known as charge carriers. Doping a semiconductor such as silicon with a small amount of impurity atoms, such as phosphorus or boron, greatly increases the number of free electrons or holes within the semiconductor. When a doped semiconductor contains excess holes it is called ""p-type"", and when it contains excess free electrons it is known as ""n-type"", where p (positive for holes) or n (negative for electrons) is the sign of the charge of the majority mobile charge carriers. The semiconductor material used in devices is doped under highly controlled conditions in a fabrication facility, or fab, to control precisely the location and concentration of p- and n-type dopants. The junctions which form where n-type and p-type semiconductors join together are called p–n junctions.
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