Single Molecular Electronics
... organic synthesis in recent years, was used as Coulomb Island, and polyimide (PI) LB film [14] was used as electron tunneling barrier because it is known to provide satisfactory functions as electron tunneling barrier [13] and it can control single molecular film thickness [0.4 nm] by LB method. De ...
... organic synthesis in recent years, was used as Coulomb Island, and polyimide (PI) LB film [14] was used as electron tunneling barrier because it is known to provide satisfactory functions as electron tunneling barrier [13] and it can control single molecular film thickness [0.4 nm] by LB method. De ...
ANSI numbers IEEE Standard Electric Power System
... protected apparatus (other than the loadcarrying windings of machines and transformers as covered by device function number 49) or of a liquid or other medium exceeds a predetermined value; or when the temperature of the protected apparatus or of any medium decreases below a predetermined value. 27. ...
... protected apparatus (other than the loadcarrying windings of machines and transformers as covered by device function number 49) or of a liquid or other medium exceeds a predetermined value; or when the temperature of the protected apparatus or of any medium decreases below a predetermined value. 27. ...
MOSFET ID vs. VGS characteristic - EECS: www
... • In a digital circuit, an n-channel MOSFET in the ON state is typically used to discharge a capacitor connected to its drain terminal: – gate voltage VG = VDD – source voltage VS = 0 V – drain voltage VD initially at VDD, discharging toward 0 V ...
... • In a digital circuit, an n-channel MOSFET in the ON state is typically used to discharge a capacitor connected to its drain terminal: – gate voltage VG = VDD – source voltage VS = 0 V – drain voltage VD initially at VDD, discharging toward 0 V ...
A Comparison Between RF MEMS Switches and Semiconductor
... switching MESFET give an FOM of 270 fs. These values have been achieved after about 20 years of development of MESFETs as commercial devices. The FOM is limited by the conductivity of the AlGaAs channel. The channel is heavily doped, near the solubility limit, but it must be made thin enough that th ...
... switching MESFET give an FOM of 270 fs. These values have been achieved after about 20 years of development of MESFETs as commercial devices. The FOM is limited by the conductivity of the AlGaAs channel. The channel is heavily doped, near the solubility limit, but it must be made thin enough that th ...
CHOICE BASED CREDIT SYSTEM B. SC. PROGRAM WITH
... Junction Diode and its applications: PN junction diode (Ideal and practical)constructions, Formation of Depletion Layer, Diode Equation and I-V characteristics. Idea of static and dynamic resistance, dc load line analysis, Quiescent (Q) point. Zener diode, Reverse saturation current, Zener and avala ...
... Junction Diode and its applications: PN junction diode (Ideal and practical)constructions, Formation of Depletion Layer, Diode Equation and I-V characteristics. Idea of static and dynamic resistance, dc load line analysis, Quiescent (Q) point. Zener diode, Reverse saturation current, Zener and avala ...
A Comparison of Si CMOS, SiGe BiCMOS, and InP HBT
... internal gate capacitance and contribute significantly to performance degradation in digital and RF circuits. Shrinking the unit gate finger width Wf below 1 mm and/or contacting the gate on both sides does little to improve fMAX and noise figure while severely reducing fT [10]. As a result of the ...
... internal gate capacitance and contribute significantly to performance degradation in digital and RF circuits. Shrinking the unit gate finger width Wf below 1 mm and/or contacting the gate on both sides does little to improve fMAX and noise figure while severely reducing fT [10]. As a result of the ...
File
... multiplicity, and microelectronics. Miniaturization is clearly an important part of MEMS, since materials and components that are relatively small and light enable compact and quickresponse devices. Multiplicity refers to the batch fabrication inherent in semiconductor processing. Consequently, it i ...
... multiplicity, and microelectronics. Miniaturization is clearly an important part of MEMS, since materials and components that are relatively small and light enable compact and quickresponse devices. Multiplicity refers to the batch fabrication inherent in semiconductor processing. Consequently, it i ...
DCA Pro User Guide
... diode technology. In this example, it is likely that the diode is a standard silicon diode. A germanium or Schottky diode may yield a forward voltage of about 0.25V. The current at which the diode was tested is also displayed. The DCA Pro typically tests diodes (PN junctions) at a forward current of ...
... diode technology. In this example, it is likely that the diode is a standard silicon diode. A germanium or Schottky diode may yield a forward voltage of about 0.25V. The current at which the diode was tested is also displayed. The DCA Pro typically tests diodes (PN junctions) at a forward current of ...
STANDARD REVIEW PLAN
... design tests for relays and relay systems that relate to their immunity to electrical transients induced by fault conditions. IEEE Std C62.41.1-2002, “IEEE Guide on the Surge Environment in Low-Voltage (1000 V and Less) AC Power Circuits,” describes the temporary overvoltages induced by fault condit ...
... design tests for relays and relay systems that relate to their immunity to electrical transients induced by fault conditions. IEEE Std C62.41.1-2002, “IEEE Guide on the Surge Environment in Low-Voltage (1000 V and Less) AC Power Circuits,” describes the temporary overvoltages induced by fault condit ...
Transistor–transistor logic (TTL)
... TTL became the foundation of computers and other digital electronics. Even after much larger scale integrated circuits made multiple-circuit-board processors obsolete, TTL devices still found extensive use as the "glue" logic interfacing more densely integrated components. TTL devices were originall ...
... TTL became the foundation of computers and other digital electronics. Even after much larger scale integrated circuits made multiple-circuit-board processors obsolete, TTL devices still found extensive use as the "glue" logic interfacing more densely integrated components. TTL devices were originall ...
Old Company Name in Catalogs and Other Documents
... of third parties by or arising from the use of Renesas Electronics products or technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or others. You shou ...
... of third parties by or arising from the use of Renesas Electronics products or technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or others. You shou ...
Electrical Surge-Protection Devices for Industrial
... entrance of sensitive electronic equipment. The North American market has excluded “crowbar” devices from protecting sensitive electronic equipment due to the proven harmful interference that crowbar devices induce during their conducting stage on the electronic equipment that they intend to protect ...
... entrance of sensitive electronic equipment. The North American market has excluded “crowbar” devices from protecting sensitive electronic equipment due to the proven harmful interference that crowbar devices induce during their conducting stage on the electronic equipment that they intend to protect ...
Transparencies ppt
... •Silicon is a reliable detector technology •Available on large scale (200 m2 CMS) by many vendors with high yield •6’’ wafers are standard, 8’’ are coming •Different silicon growing techniques can be exploited for sensor production (CZ, MCz, FZ, epi-Si) •Many different electronics read-out ASICs wer ...
... •Silicon is a reliable detector technology •Available on large scale (200 m2 CMS) by many vendors with high yield •6’’ wafers are standard, 8’’ are coming •Different silicon growing techniques can be exploited for sensor production (CZ, MCz, FZ, epi-Si) •Many different electronics read-out ASICs wer ...
BP104, BP104S Silicon PIN Photodiode
... number of undesirable flaws in the crystal is reduced. This results in a higher quantum efficiency and thus higher radiation power. Distortions in the crystal are prevented by using mesa technology which leads to lower degradation. A further advantage of the mesa technology is that each individual c ...
... number of undesirable flaws in the crystal is reduced. This results in a higher quantum efficiency and thus higher radiation power. Distortions in the crystal are prevented by using mesa technology which leads to lower degradation. A further advantage of the mesa technology is that each individual c ...
Chopper-Stabilized Bidirectional Current Acquisition Circuits for
... the long time required for acquiring a biosensor spectrum which can affect the real-time detection capability. The use of a transimpedance amplifier is the most common approach to redox current acquisition [10]. In this approach the transimpedance amplifier (TIA) sets a virtual potential at the work ...
... the long time required for acquiring a biosensor spectrum which can affect the real-time detection capability. The use of a transimpedance amplifier is the most common approach to redox current acquisition [10]. In this approach the transimpedance amplifier (TIA) sets a virtual potential at the work ...
IOSR Journal of VLSI and Signal Processing (IOSR-JVSP)
... The performance of a digital circuit is judged by its speed in producing output when an input is given to it. The most common technology for designing digital circuits is the CMOS technology. After the development of CMOS logic, there was increasing need to optimize circuit in terms of speed. One te ...
... The performance of a digital circuit is judged by its speed in producing output when an input is given to it. The most common technology for designing digital circuits is the CMOS technology. After the development of CMOS logic, there was increasing need to optimize circuit in terms of speed. One te ...
2. Transistors, Fabrication, Layout
... nMOS Transistor Operation Body (bulk) is commonly tied to Ground (0 V) When the gate is at a low voltage P-type body is at low voltage Source-body and drain-body diodes are OFF No current flows, transistor is OFF ...
... nMOS Transistor Operation Body (bulk) is commonly tied to Ground (0 V) When the gate is at a low voltage P-type body is at low voltage Source-body and drain-body diodes are OFF No current flows, transistor is OFF ...
Flexible, organic light-pen input device with integrated
... a major role in information exchange between human and computers. Therefore, there is an ever-present demand for new types of interface devices with improved usability [1,2]. Of particular interest are devices that integrate a display with an input component such as a touch-pad, as they allow input ...
... a major role in information exchange between human and computers. Therefore, there is an ever-present demand for new types of interface devices with improved usability [1,2]. Of particular interest are devices that integrate a display with an input component such as a touch-pad, as they allow input ...
DRV8837,DRV8838 - Texas Instruments
... The DRV883x family of devices is an H-bridge driver that can drive one dc motor or other devices like solenoids. The outputs are controlled using either a PWM interface (IN1 and IN2) on the DRV8837 device or a PH-EN interface on the DRV8838 device. A low-power sleep mode is included, which can be en ...
... The DRV883x family of devices is an H-bridge driver that can drive one dc motor or other devices like solenoids. The outputs are controlled using either a PWM interface (IN1 and IN2) on the DRV8837 device or a PH-EN interface on the DRV8838 device. A low-power sleep mode is included, which can be en ...
AH5795 SINGLE PHASE HALL EFFECT LATCH SMART FAN MOTOR CONTROLLER
... Frequency of PWM speed control signal can be between 15Hz to 50kHz. Recommended typical PWM signal frequency is 25kHz to keep switching frequency away from audible band. If PWM signal level at PWM pin stays low for longer than 65ms typical, the outputs are disabled. Depending on the motor design and ...
... Frequency of PWM speed control signal can be between 15Hz to 50kHz. Recommended typical PWM signal frequency is 25kHz to keep switching frequency away from audible band. If PWM signal level at PWM pin stays low for longer than 65ms typical, the outputs are disabled. Depending on the motor design and ...
Semiconductor device
Semiconductor devices are electronic components that exploit the electronic properties of semiconductor materials, principally silicon, germanium, and gallium arsenide, as well as organic semiconductors. Semiconductor devices have replaced thermionic devices (vacuum tubes) in most applications. They use electronic conduction in the solid state as opposed to the gaseous state or thermionic emission in a high vacuum.Semiconductor devices are manufactured both as single discrete devices and as integrated circuits (ICs), which consist of a number—from a few (as low as two) to billions—of devices manufactured and interconnected on a single semiconductor substrate, or wafer.Semiconductor materials are useful because their behavior can be easily manipulated by the addition of impurities, known as doping. Semiconductor conductivity can be controlled by introduction of an electric or magnetic field, by exposure to light or heat, or by mechanical deformation of a doped monocrystalline grid; thus, semiconductors can make excellent sensors. Current conduction in a semiconductor occurs via mobile or ""free"" electrons and holes, collectively known as charge carriers. Doping a semiconductor such as silicon with a small amount of impurity atoms, such as phosphorus or boron, greatly increases the number of free electrons or holes within the semiconductor. When a doped semiconductor contains excess holes it is called ""p-type"", and when it contains excess free electrons it is known as ""n-type"", where p (positive for holes) or n (negative for electrons) is the sign of the charge of the majority mobile charge carriers. The semiconductor material used in devices is doped under highly controlled conditions in a fabrication facility, or fab, to control precisely the location and concentration of p- and n-type dopants. The junctions which form where n-type and p-type semiconductors join together are called p–n junctions.