Chapter 5 - Share ITS
... MOS and CMOS ICs • MOS stands for Metal-Oxide Semiconductor. • PMOS, NMOS, and CMOS are three technologies used to manufacture ICs. TTL is another very fast technology. • NMOS stands for Negative-channel Metal-Oxide Semiconductor. NMOS ICs are faster than PMOS. • PMOS stands for Positive-channel Me ...
... MOS and CMOS ICs • MOS stands for Metal-Oxide Semiconductor. • PMOS, NMOS, and CMOS are three technologies used to manufacture ICs. TTL is another very fast technology. • NMOS stands for Negative-channel Metal-Oxide Semiconductor. NMOS ICs are faster than PMOS. • PMOS stands for Positive-channel Me ...
File
... There are certain pieces of data that are normally provided on diode specification sheets provided by manufacturers. One such quantity that has not been considered yet is the reverse recovery time, denoted by trr . In the forward-bias state it was shown earlier that there are a large number of elect ...
... There are certain pieces of data that are normally provided on diode specification sheets provided by manufacturers. One such quantity that has not been considered yet is the reverse recovery time, denoted by trr . In the forward-bias state it was shown earlier that there are a large number of elect ...
A1205: Continuous-Time Bipolar Switch
... The devices of the A120X family provide highly sensitive switching for applications using magnetic fields of alternating polarities, such as ring magnets. There are three switching modes for bipolar devices, referred to as latch, unipolar switch, and negative switch. Mode is determined by the switch ...
... The devices of the A120X family provide highly sensitive switching for applications using magnetic fields of alternating polarities, such as ring magnets. There are three switching modes for bipolar devices, referred to as latch, unipolar switch, and negative switch. Mode is determined by the switch ...
Old Company Name in Catalogs and Other Documents
... of third parties by or arising from the use of Renesas Electronics products or technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or others. You shou ...
... of third parties by or arising from the use of Renesas Electronics products or technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or others. You shou ...
Piezoelectric Materials
... Piezoelectric transducers are widely used to generate ultrasonic waves in solids and also to detect such mechanical waves. The transducer on the left is excited from an ac source and vibrates mechanically. These vibrations are coupled to the solid and generate elastic waves. When the waves reach th ...
... Piezoelectric transducers are widely used to generate ultrasonic waves in solids and also to detect such mechanical waves. The transducer on the left is excited from an ac source and vibrates mechanically. These vibrations are coupled to the solid and generate elastic waves. When the waves reach th ...
Old Company Name in Catalogs and Other Documents
... of third parties by or arising from the use of Renesas Electronics products or technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or others. You shou ...
... of third parties by or arising from the use of Renesas Electronics products or technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or others. You shou ...
ZXGD3006E6 A Product Line of Diodes Incorporated
... and turn-off switching behavior of the IGBT can be individually tailored ...
... and turn-off switching behavior of the IGBT can be individually tailored ...
Y. Hu, W. Rieutort-Louis, J. Sanz-Robinson, L. Huang, B. Glisic, J.C. Sturm, S. Wagner, and N. Verma, "Large-Scale Sensing System Combining Large-Area Electronics and CMOS ICs for Structural-Health Monitoring", J. Solid-State Circuits, Vol 49, pp. 513-523 (FEB 2014).
... The key limitation to creating hybrid LAE-CMOS architectures is the interfacing required between the two technologies. In particular, this must be achieved in a manner that is both scalable and able to maximally leverage the characteristics offered by the two technologies. Fig. 1 shows the system ar ...
... The key limitation to creating hybrid LAE-CMOS architectures is the interfacing required between the two technologies. In particular, this must be achieved in a manner that is both scalable and able to maximally leverage the characteristics offered by the two technologies. Fig. 1 shows the system ar ...
Varactor Diodes
... measurement setup will be negligible. In any real, physical environment the electric fields across any capacitor fringe away from the active or dielectric material into the surrounding space and are terminated on nearby or remote conductors. This contributes to the fringe capacitance and is inherent ...
... measurement setup will be negligible. In any real, physical environment the electric fields across any capacitor fringe away from the active or dielectric material into the surrounding space and are terminated on nearby or remote conductors. This contributes to the fringe capacitance and is inherent ...
MC145193 Advance Information 1.1 GHz PLL Frequency Synthesizer
... tied from the Rx pin to ground. This current can be varied via the serial port. Slew–rate control is provided by a special driver designed for the REFout pin. This minimizes interference caused by REFout. This part includes a differential RF input that may be operated in a single–ended mode. Also fe ...
... tied from the Rx pin to ground. This current can be varied via the serial port. Slew–rate control is provided by a special driver designed for the REFout pin. This minimizes interference caused by REFout. This part includes a differential RF input that may be operated in a single–ended mode. Also fe ...
Old Company Name in Catalogs and Other Documents
... of third parties by or arising from the use of Renesas Electronics products or technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or others. You shou ...
... of third parties by or arising from the use of Renesas Electronics products or technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or others. You shou ...
Optimization of Transistors for Very High Frequency dc
... MHz to 300 MHz) regime. Such converters can achieve very good efficiencies over wide load and input ranges for power levels from a few watts to hundreds of watts [1]–[3]. However, the device losses that dominate in VHF converters are significantly different than under hard-switched operation. As a r ...
... MHz to 300 MHz) regime. Such converters can achieve very good efficiencies over wide load and input ranges for power levels from a few watts to hundreds of watts [1]–[3]. However, the device losses that dominate in VHF converters are significantly different than under hard-switched operation. As a r ...
SLIC Devices
... SLIC FAMILY FUNCTIONAL DESCRIPTION Zarlink’s SLIC device family has grown and includes device operating characteristics and options not previously available. Current offerings also include new choices of power management and DC feed control to address needs of major telephony markets. Although certa ...
... SLIC FAMILY FUNCTIONAL DESCRIPTION Zarlink’s SLIC device family has grown and includes device operating characteristics and options not previously available. Current offerings also include new choices of power management and DC feed control to address needs of major telephony markets. Although certa ...
Microminiature circuitry
... micromodule approach, on the‘ other hand, can maintain 65 tor crystal bodies of identical shape and size, it will become an inventory of different wafers Whichare used as the ...
... micromodule approach, on the‘ other hand, can maintain 65 tor crystal bodies of identical shape and size, it will become an inventory of different wafers Whichare used as the ...
FBS-GAM02-P-C50 - Freebird Semiconductor
... 9.) VBIAS levels below the UVLO- and above the OVLO+ thresholds result in the internal bottom and top gate drivers being disabled: The logic inputs to the drivers are internally set to a logic low state to prevent damage to the eGaN® power switches. 10.) The top power switch gate driver utilizes a b ...
... 9.) VBIAS levels below the UVLO- and above the OVLO+ thresholds result in the internal bottom and top gate drivers being disabled: The logic inputs to the drivers are internally set to a logic low state to prevent damage to the eGaN® power switches. 10.) The top power switch gate driver utilizes a b ...
Clipper circuits
... negative half cycle of V(2) would be clipped at 0 V for an ideal diode. The waveform is clipped at -0.7 V due to the forward voltage drop of the silicon diode. The spice model defaults to 0.7 V unless parameters in the model statement specify otherwise. Germanium or Schottky diodes clip at lower vol ...
... negative half cycle of V(2) would be clipped at 0 V for an ideal diode. The waveform is clipped at -0.7 V due to the forward voltage drop of the silicon diode. The spice model defaults to 0.7 V unless parameters in the model statement specify otherwise. Germanium or Schottky diodes clip at lower vol ...
Chapter 12 SIMPLIFIED QRO AMPLIFIER DESIGNS
... and the input signal is pure, the output will be a pure sinewave. The tricky part of this design is that, if any noise or “complex waveform” is introduced into the circuit, the amplifier may run away and produce wideband noise - more about this problem later. Fifth, a push-pull linear amplifier is n ...
... and the input signal is pure, the output will be a pure sinewave. The tricky part of this design is that, if any noise or “complex waveform” is introduced into the circuit, the amplifier may run away and produce wideband noise - more about this problem later. Fifth, a push-pull linear amplifier is n ...
Semiconductor device
Semiconductor devices are electronic components that exploit the electronic properties of semiconductor materials, principally silicon, germanium, and gallium arsenide, as well as organic semiconductors. Semiconductor devices have replaced thermionic devices (vacuum tubes) in most applications. They use electronic conduction in the solid state as opposed to the gaseous state or thermionic emission in a high vacuum.Semiconductor devices are manufactured both as single discrete devices and as integrated circuits (ICs), which consist of a number—from a few (as low as two) to billions—of devices manufactured and interconnected on a single semiconductor substrate, or wafer.Semiconductor materials are useful because their behavior can be easily manipulated by the addition of impurities, known as doping. Semiconductor conductivity can be controlled by introduction of an electric or magnetic field, by exposure to light or heat, or by mechanical deformation of a doped monocrystalline grid; thus, semiconductors can make excellent sensors. Current conduction in a semiconductor occurs via mobile or ""free"" electrons and holes, collectively known as charge carriers. Doping a semiconductor such as silicon with a small amount of impurity atoms, such as phosphorus or boron, greatly increases the number of free electrons or holes within the semiconductor. When a doped semiconductor contains excess holes it is called ""p-type"", and when it contains excess free electrons it is known as ""n-type"", where p (positive for holes) or n (negative for electrons) is the sign of the charge of the majority mobile charge carriers. The semiconductor material used in devices is doped under highly controlled conditions in a fabrication facility, or fab, to control precisely the location and concentration of p- and n-type dopants. The junctions which form where n-type and p-type semiconductors join together are called p–n junctions.