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Selecting cables and fuses Lesson Element
Selecting cables and fuses Lesson Element

... Protection of semiconductor devices and devices containing electronic components Protection of domestic appliances Protection of general equipment (which might have internal protection of sub-systems using slow and quick acting fuses) Typically used in high power applications such as 3-phase systems ...
replacing selenium rectifiers
replacing selenium rectifiers

... exceeding 500 V. To replace them with selenium would require a very long stack of plates, certainly a dozen or more in series. But this fact highlights the really dramatic advantage of silicon rectifiers. In many circuits, one 1N4007 can be used to replace each plate of a dual rectifier tube. This s ...
NBTI Degradation: A Problem or a Scare?
NBTI Degradation: A Problem or a Scare?

User Manual Installation Industrial Ethernet Rail Switch
User Manual Installation Industrial Ethernet Rail Switch

... translation, conversion into any electronic medium or machine scannable form is not permitted, either in whole or in part. An exception is the preparation of a backup copy of the software for your own use. For devices with embedded software, the end-user license agreement on the enclosed CD/DVD appl ...
Wirebondable Finishes Application Notes
Wirebondable Finishes Application Notes

Electronic transport at semiconductor
Electronic transport at semiconductor

... through the first needle (emitter), and electric potential distribution near the point contact was investigated with the second needle (collector) as a probe, as a function of the voltage applied to the germanium crystal via the base electrode. Brattain and Bardeen discovered amplification during such ...
Designer`s™ Data Sheet Insulated Gate Bipolar Transistor
Designer`s™ Data Sheet Insulated Gate Bipolar Transistor

... the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters ...
IOSR Journal of VLSI and Signal Processing (IOSR-JVSP)
IOSR Journal of VLSI and Signal Processing (IOSR-JVSP)

... substrate. At the same time electrons are collected by the drain, resulting in GIDL current. This leakage mechanism is made work by high drain to body voltage and high drain to gate voltage. Thinner oxide and higher supply voltage increases GIDL current. Gate direct tunneling leakage (IG): With scal ...
Superjunction MOSFET for charger applications
Superjunction MOSFET for charger applications

... MOSFET virtually to zero, limited only by technology efforts and manufacturing capabilities.” [5] “The basic idea is simple: instead of having electrons flowing through a relatively high resistive (high voltage blocking) n-area, we allow them to flow in a very rich doped n-area, which gives naturall ...
M F L OLDING THE
M F L OLDING THE

... We can cast Maxwell’s equations for the propagation of light in mixed, loss-less dielectric media in a form reminiscent of Schrödinger’s equation. Consequently, we can use techniques for studying electrons in solids to study photon modes in photonic crystals.4,5 The main differences are that electro ...
PUMX1 40 V, 100 mA NPN/NPN general-purpose transistor
PUMX1 40 V, 100 mA NPN/NPN general-purpose transistor

... Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. NXP Semiconductors does no ...
Emerging Trends in IRFPA Sensors
Emerging Trends in IRFPA Sensors

... majority of these devices use semiconducting materials. Use of alloy semiconductors has allowed tailoring of device properties, particularly the wavelength response. Mercury cadmium telluride (MCT) is the most important semiconductor alloy which has produced highest performance devices for nearly fo ...
as a PDF
as a PDF

Application Note No. 101
Application Note No. 101

... characteristics that set them apart. In order for the lighting system designer to successfully bring an economicallyviable LED-based system to market, the designer must be aware of the LED's traits, taking them into account during the design process. ...
Liquid crystal display
Liquid crystal display

... 2. Glass substrate with ITO electrodes. The shapes of these electrodes will determine the shapes that will appear when the LCD is turned ON. Vertical ridges etched on the surface are smooth. 3. Twisted nematic liquid crystal. 4. Glass substrate with common electrode film (ITO) with horizontal ridge ...
fa05 fault 1
fa05 fault 1

DATA  SHEET BFG35 NPN 4 GHz wideband transistor
DATA SHEET BFG35 NPN 4 GHz wideband transistor

... the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. ...
IOSR Journal of Electronics and Communication Engineering (IOSR-JECE)
IOSR Journal of Electronics and Communication Engineering (IOSR-JECE)

HIGH-CURRENT RTP DEVICES Reflowable Thermal Protection For High-Power Automotive
HIGH-CURRENT RTP DEVICES Reflowable Thermal Protection For High-Power Automotive

... Method Of Operation – Electronic Arming The RTP device is a unique thermal protector. It can be reflowed at temperatures up to 260°C without opening, yet in operation it will open at temperatures well below 260°C. To achieve this functionality, the RTP device uses an electronic arming mechanism. Ele ...
Schottky behavior of organic solar cells with different cathode
Schottky behavior of organic solar cells with different cathode

... The organic solar cells have potential application in power supplies for mobile consumer electronics. Organic solar cells can be used in power supplies for sensor networks. It can also be used in radio frequency tags, laptop computers and iPods. ...
PAM8010 Description Pin Assignments
PAM8010 Description Pin Assignments

... At this stage it is paramount to notice the necessity of separate grounds. Noise currents in the output power stage need to be returned to output noise ground and nowhere else. Were these currents to circulate elsewhere, they may get into the power supply, the signal ground, etc, worse yet, they may ...
PWMSP_delia2
PWMSP_delia2

... An example of circuit breaker derating ...
WiseChip Semiconductor Inc.
WiseChip Semiconductor Inc.

... module may occur. Also, for normal operations, it is desirable to use this module under the conditions according to Section 3. “Optics & Electrical Characteristics”. If this module is used beyond these conditions, malfunctioning of the module can occur and the reliability of the module may deteriora ...
Diagram of circuit
Diagram of circuit

... Electrons move in different orbits, or energy levels, around the nucleus like planets orbit the sun. Each energy level is located a specific distance from the nucleus and contains a certain number of electrons. ...
SPDT switch MMIC enables high - Defense Electronics Magazine
SPDT switch MMIC enables high - Defense Electronics Magazine

... insertion loss and return loss of the switch. Measured performance meets or exceeds the goals in Table 1. Figure 5 also shows the measured port match at the Tx port and the common (antenna) port in the low-loss switch “on” state. In the high-insertion loss switch “off” state, the measured Tx-to-Rx i ...
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Semiconductor device



Semiconductor devices are electronic components that exploit the electronic properties of semiconductor materials, principally silicon, germanium, and gallium arsenide, as well as organic semiconductors. Semiconductor devices have replaced thermionic devices (vacuum tubes) in most applications. They use electronic conduction in the solid state as opposed to the gaseous state or thermionic emission in a high vacuum.Semiconductor devices are manufactured both as single discrete devices and as integrated circuits (ICs), which consist of a number—from a few (as low as two) to billions—of devices manufactured and interconnected on a single semiconductor substrate, or wafer.Semiconductor materials are useful because their behavior can be easily manipulated by the addition of impurities, known as doping. Semiconductor conductivity can be controlled by introduction of an electric or magnetic field, by exposure to light or heat, or by mechanical deformation of a doped monocrystalline grid; thus, semiconductors can make excellent sensors. Current conduction in a semiconductor occurs via mobile or ""free"" electrons and holes, collectively known as charge carriers. Doping a semiconductor such as silicon with a small amount of impurity atoms, such as phosphorus or boron, greatly increases the number of free electrons or holes within the semiconductor. When a doped semiconductor contains excess holes it is called ""p-type"", and when it contains excess free electrons it is known as ""n-type"", where p (positive for holes) or n (negative for electrons) is the sign of the charge of the majority mobile charge carriers. The semiconductor material used in devices is doped under highly controlled conditions in a fabrication facility, or fab, to control precisely the location and concentration of p- and n-type dopants. The junctions which form where n-type and p-type semiconductors join together are called p–n junctions.
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