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The Impact of Power Switching Devices on the Thermal
The Impact of Power Switching Devices on the Thermal

... needed for the three device solutions are quite different: the IGBT module solution consumes up to 80% more device numbers than the other two press-pack solutions. This is mainly because of the maximum current rating limits for a single IGBT module. When taking into account the extra auxiliary parts ...
efficiency quantum dot-based LEDs
efficiency quantum dot-based LEDs

FSSD07 1-Bit / 4-Bit SD/SDIO and MMC Dual-Host Multiplexer
FSSD07 1-Bit / 4-Bit SD/SDIO and MMC Dual-Host Multiplexer

... rail, such that hosts with different supplies can be interfaced to a common peripheral module or card. The peripheral card supply must be equal to or greater than the host(s) to minimize power consumption. The independent VDDC, VDDH1, and VDDH2 are defined by the supplies connected from the applicat ...
AN-4151 Half-Bridge LLC Resonant Converter Design Using FSFR
AN-4151 Half-Bridge LLC Resonant Converter Design Using FSFR

... resonant network (Vd). This permits the MOSFETs to turn on with zero voltage (ZVS), as illustrated in Figure 12. Meanwhile, the input impedance of the resonant network becomes capacitive and Ip leads Vd below the peak gain frequency. When operating in capacitive region, the MOSFET body diode is reve ...
MOD I - SNGCE DIGITAL LIBRARY
MOD I - SNGCE DIGITAL LIBRARY

... Power electronics is the technology of converting electric power from one form to another using electronic power devices. Several types of solid state power semiconductor devices have been developed, making it possible to build efficient power converter with excellent facility for control of output ...
MC33811, Solenoid Monitor Integrated Circuit
MC33811, Solenoid Monitor Integrated Circuit

... Rising edge of the CS initiates the following operation: 1. Disables the SO driver (high-impedance) 2. Activates the received command word, allowing the 33811 to activate/deactivate output drivers. To avoid any spurious data, it is essential the high-to-low and low-to-high transitions of the CS sign ...
TPS2379 - Texas Instruments
TPS2379 - Texas Instruments

... Copyright © 2012–2015, Texas Instruments Incorporated ...
Terminations for Advanced CMOS Logic
Terminations for Advanced CMOS Logic

... not affect power consumption. Therefore, parallel termination dissipates less AC power. Because of this lower AC power at high frequencies, parallel terminations may consume less power than no termination. Depending upon the load capacitance, signal duty cycle, and line impedance, this frequency can ...
Diode Thermal Analysis (Appendix B).
Diode Thermal Analysis (Appendix B).

... remove heat from the diode. As such, it is generally possible to drive the diode at increased forward current levels (up to twice the VMI published ratings), when operating in an oil environment. For oil operation, use the zero lead length power derating curve. ...
IOSR Journal of VLSI and Signal Processing (IOSR-JVSP)
IOSR Journal of VLSI and Signal Processing (IOSR-JVSP)

W. Rieutort-Louis, L. Huang, Y. Hu, J. Sanz-Robinson, T. Moy, Y. Afsar, J.C. Sturm, N. Verma, and S. Wagner, "Current Cain of Amorphous Silicon Thin-Film Transistors Above the Cutoff Frequency", Device Research Conference (DRC) (2014)
W. Rieutort-Louis, L. Huang, Y. Hu, J. Sanz-Robinson, T. Moy, Y. Afsar, J.C. Sturm, N. Verma, and S. Wagner, "Current Cain of Amorphous Silicon Thin-Film Transistors Above the Cutoff Frequency", Device Research Conference (DRC) (2014)

... A key challenge for the development of high functionality thin-film large-area electronic systems is the operational frequencies achievable by Thin-Film Transistors (TFTs). These frequencies are typically limited by low transconductances and large (gate and overlap) capacitances. However, we have re ...
SIM Card EMI Filter Array with ESD Protection
SIM Card EMI Filter Array with ESD Protection

... ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any partic ...
Old Company Name in Catalogs and Other Documents
Old Company Name in Catalogs and Other Documents

... of third parties by or arising from the use of Renesas Electronics products or technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or others. You shou ...
TPD1E6B06 Single-Channel ESD Protection Diode in 0201
TPD1E6B06 Single-Channel ESD Protection Diode in 0201

... The TPD1E6B06 is a passive clamp that has low leakage during normal operation and activates whenever the voltage between pin 1 and pin 2 goes above VRWM or below -VRWM. During IEC ESD events, transient voltages as high as ±15 kV can be clamped between the two pins. When the voltages on the protected ...
Organic and Nanostructured Materials in Optoelectronic Applications: Physical Processes and Active Devices
Organic and Nanostructured Materials in Optoelectronic Applications: Physical Processes and Active Devices

... materials are susceptible to deterioration from atmospheric oxygen and water vapor. Device lifetimes can be improved with packaging, but this increases cost, making it difficult for QD-LEDs to compete with the already established technology of liquid crystal displays (LCDs). Furthermore, organic mat ...
NCP177 - Linear Voltage Regulator Fast Transient Response 500
NCP177 - Linear Voltage Regulator Fast Transient Response 500

... as possible to the output and ground pins. The recommended capacitor value is 1 mF, ceramic X7R or X5R type due to its low capacitance variations over the specified temperature range. The LDO is designed to remain stable with minimum effective capacitance of 0.8 mF. When selecting the capacitor the ...
A Mathematical Descr..
A Mathematical Descr..

... inequality vDS  vGS Vt for MOSFET SAT. (more on this later!). Now, we are tempted to make another analogy between base current iB and gate current iG, but here the analogies end! Recall iG =0 always, but for BJTs we find that iB is not equal to zero (generally). ...
TCS-DL004-250-WH
TCS-DL004-250-WH

... low resistance, bidirectional, very high-speed Transient Current Suppressors. By limiting the maximum current to a safe level, a Bourns® TCS™ DL device offers superior protection for very high data rate differential lines against faults caused by short circuits, induction and lightning surges. ...
ZXLD1350 30V 350mA LED DRIVER with AEC-Q100 Description
ZXLD1350 30V 350mA LED DRIVER with AEC-Q100 Description

... circuit. Under this condition, the (-) input to the comparator is at ground and its output is high. This turns MN on and switches the LX pin low, causing current to flow from VIN to ground, via RS, L1 and the LED(s). The current rises at a rate determined by VIN and L1 to produce a voltage ramp (VSE ...
Literature review 7
Literature review 7

... semiconductor (Fig 3a); this result in an accumulation of holes (majority carriers) near the semiconductor. When a small positive voltage (VG > 0) is applied, negative charges are introduced in the semiconductor (Fig 3b). This at first is due to holes being pushed away from the surface, leaving behi ...
FSSD06 — SD/SDIO and MMC Two-Port Multiplexer Features Description 
FSSD06 — SD/SDIO and MMC Two-Port Multiplexer Features Description 

... The 1CMD, 2CMD, 1DAT[3:0], and 2DAT[3:0] ports do not have, internally, the system pull-up resistors as defined in the MMC or SD card system bus specifications. The system bus pull-up must be added external to the FSSD06. The value, within the specific specification limits, is a function of the indi ...
Physics -2 Laboratory Manual (PH
Physics -2 Laboratory Manual (PH

... 03. To start with, R is made of the order of 5000 ohm and r is made zero. With S = 0, the battery circuit is closed. If the galvanometer shows a deflection then the plugs in S is to be properly inserted till there is no deflection. 04. S is given a minimum value (0.1 ohm) and starting from a large v ...
energies The Impacts of Power Switching Devices to the Thermal
energies The Impacts of Power Switching Devices to the Thermal

Chapter 1: Introduction to CMOS Circuits
Chapter 1: Introduction to CMOS Circuits

FPF2024/5/6/7 Full Functional Load Switch With 100mA Current Limit F P
FPF2024/5/6/7 Full Functional Load Switch With 100mA Current Limit F P

... configurations to accommodate various application requirements. FPF2024, FPF2026 and FPF2027 are active high switches while the FPF2025 is an active low device. Applying a continuous high or low signal depending on the switch configuration, will hold the switch in the ON state. The load switch will ...
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Semiconductor device



Semiconductor devices are electronic components that exploit the electronic properties of semiconductor materials, principally silicon, germanium, and gallium arsenide, as well as organic semiconductors. Semiconductor devices have replaced thermionic devices (vacuum tubes) in most applications. They use electronic conduction in the solid state as opposed to the gaseous state or thermionic emission in a high vacuum.Semiconductor devices are manufactured both as single discrete devices and as integrated circuits (ICs), which consist of a number—from a few (as low as two) to billions—of devices manufactured and interconnected on a single semiconductor substrate, or wafer.Semiconductor materials are useful because their behavior can be easily manipulated by the addition of impurities, known as doping. Semiconductor conductivity can be controlled by introduction of an electric or magnetic field, by exposure to light or heat, or by mechanical deformation of a doped monocrystalline grid; thus, semiconductors can make excellent sensors. Current conduction in a semiconductor occurs via mobile or ""free"" electrons and holes, collectively known as charge carriers. Doping a semiconductor such as silicon with a small amount of impurity atoms, such as phosphorus or boron, greatly increases the number of free electrons or holes within the semiconductor. When a doped semiconductor contains excess holes it is called ""p-type"", and when it contains excess free electrons it is known as ""n-type"", where p (positive for holes) or n (negative for electrons) is the sign of the charge of the majority mobile charge carriers. The semiconductor material used in devices is doped under highly controlled conditions in a fabrication facility, or fab, to control precisely the location and concentration of p- and n-type dopants. The junctions which form where n-type and p-type semiconductors join together are called p–n junctions.
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