FSA223 — USB2.0 High-Speed (480Mbps) and Features
... 5. 4.3 V is guaranteed by characterization, not production tested. 6. On resistance is determined by the voltage drop between the A and B pins at the indicated current through the switch. 7. ∆ RON=RON max – RON min measured at identical VCC, temperature, and voltage. Worst-case signal path, audio or ...
... 5. 4.3 V is guaranteed by characterization, not production tested. 6. On resistance is determined by the voltage drop between the A and B pins at the indicated current through the switch. 7. ∆ RON=RON max – RON min measured at identical VCC, temperature, and voltage. Worst-case signal path, audio or ...
PDF 2,1 MB - Elmos Semiconductor AG
... Pulse 1, 2a, 3a, 3b according to ISO7637-1, -2 Class C Minimum value from -40 to +95°C. Between +95°C and +125°C VBP = VBM = -17V VBUF corresponds to the parameter VStarSupply of the EPL specification [EPL09] ...
... Pulse 1, 2a, 3a, 3b according to ISO7637-1, -2 Class C Minimum value from -40 to +95°C. Between +95°C and +125°C VBP = VBM = -17V VBUF corresponds to the parameter VStarSupply of the EPL specification [EPL09] ...
AM4964 Description A Product Line of
... CT pin provides the timing for the Locked Rotor monitor. In normal operation, Lock Detect is enabled. If the Hall signal does not change (i.e. a rotor lock condition) within the Lock Detect time (tLCKDET), the outputs are disabled. In this condition the motor will not be driven for a set time tOFF. ...
... CT pin provides the timing for the Locked Rotor monitor. In normal operation, Lock Detect is enabled. If the Hall signal does not change (i.e. a rotor lock condition) within the Lock Detect time (tLCKDET), the outputs are disabled. In this condition the motor will not be driven for a set time tOFF. ...
PDF
... and higher average power consumption. Fin-type field effect transistors (FinFET) are promising substitute for bulk MOS at the nanoscale. This is because the fabrication technology of FinFET is almost the same as that of the conventional MOS transistor [1]. FinFET’s are from the double gate transisto ...
... and higher average power consumption. Fin-type field effect transistors (FinFET) are promising substitute for bulk MOS at the nanoscale. This is because the fabrication technology of FinFET is almost the same as that of the conventional MOS transistor [1]. FinFET’s are from the double gate transisto ...
New Open LED Shunt Protection (LSP) Devices
... protection, it is worthwhile to explore the basic threats to LEDs and the associated failure modes. First, there are four main threats: • High temperatures are the leading cause of LED failure. Operating at high temperatures will shorten the life of any LED, and can also lead to sudden failures ...
... protection, it is worthwhile to explore the basic threats to LEDs and the associated failure modes. First, there are four main threats: • High temperatures are the leading cause of LED failure. Operating at high temperatures will shorten the life of any LED, and can also lead to sudden failures ...
UM10540 NVT2001GM and NVT2002DP demo boards Rev. 1 — 7 March 2012
... design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design ...
... design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design ...
Silicon-Organic Hybrid Electro-Optical Devices
... the InP, and the GaAs semiconductor platforms. Among these, the silicon platform is unique because the material is widely available at low cost and is already the mainstay of the electronics industry [3]. However, silicon has issues when applied for photonics. Due to its centro-symmetric crystal str ...
... the InP, and the GaAs semiconductor platforms. Among these, the silicon platform is unique because the material is widely available at low cost and is already the mainstay of the electronics industry [3]. However, silicon has issues when applied for photonics. Due to its centro-symmetric crystal str ...
ZXLD1370
... Current monitor input. Connect current sense resistor between this pin and VIN The nominal voltage across the resistor is 225mV ...
... Current monitor input. Connect current sense resistor between this pin and VIN The nominal voltage across the resistor is 225mV ...
The Input/Output System .... (384K pdf file)
... A temperature transducer is an example of an analog input device. It sends a continuous stream of temperature data to a PLC (see Figure 2-3). This temperature data is expressed in varying degrees—not simply as hot or cold. An analog control valve is an example of an analog output device. It receives ...
... A temperature transducer is an example of an analog input device. It sends a continuous stream of temperature data to a PLC (see Figure 2-3). This temperature data is expressed in varying degrees—not simply as hot or cold. An analog control valve is an example of an analog output device. It receives ...
A write-time based memristive PUF for hardware security applications
... counterfeiting, and side channel attacks. One popular solution for such hardware security attacks are physical unclonable functions (PUF) which provide a hardware specific unique signature or identification. The uniqueness of a PUF depends on intrinsic process variations within individual integrated ...
... counterfeiting, and side channel attacks. One popular solution for such hardware security attacks are physical unclonable functions (PUF) which provide a hardware specific unique signature or identification. The uniqueness of a PUF depends on intrinsic process variations within individual integrated ...
TBU-DT085-100-WH
... device which is placed in series with a signal path. The TBU® device operates in approximately 1 µs - once line current exceeds the TBU® device’s trigger current Itrigger. When operated, the TBU® device will limit the current to less than the Itrigger value within the tblock duration. If voltage abo ...
... device which is placed in series with a signal path. The TBU® device operates in approximately 1 µs - once line current exceeds the TBU® device’s trigger current Itrigger. When operated, the TBU® device will limit the current to less than the Itrigger value within the tblock duration. If voltage abo ...
TBU-DT085-300-WH Datasheet
... device which is placed in series with a signal path. The TBU® device operates in approximately 1 µs - once line current exceeds the TBU® device’s trigger current Itrigger. When operated, the TBU® device will limit the current to less than the Itrigger value within the tblock duration. If voltage abo ...
... device which is placed in series with a signal path. The TBU® device operates in approximately 1 µs - once line current exceeds the TBU® device’s trigger current Itrigger. When operated, the TBU® device will limit the current to less than the Itrigger value within the tblock duration. If voltage abo ...
Hand-Drawn Circuit Diagrams for all circuits that are to
... Purpose: The objective of this experiment is to become familiar with the properties and uses of diodes. We will first consider the i-v characteristic curve of a standard diode that we can use in the classroom. We will also see how the diode can work as a rectifier, which is an essential part of most ...
... Purpose: The objective of this experiment is to become familiar with the properties and uses of diodes. We will first consider the i-v characteristic curve of a standard diode that we can use in the classroom. We will also see how the diode can work as a rectifier, which is an essential part of most ...
Silicon Revisions 2.1, 2.0, and 1.1
... On all silicon revisions, when using Generic RNDIS mode, the user should ensure that the DMA configuration has completed prior to the host starting a transfer. This condition is sometimes violated when performing a back-to-back data transfers (not transactions). If a new transfer is scheduled by a h ...
... On all silicon revisions, when using Generic RNDIS mode, the user should ensure that the DMA configuration has completed prior to the host starting a transfer. This condition is sometimes violated when performing a back-to-back data transfers (not transactions). If a new transfer is scheduled by a h ...
Lattice Presentation
... All synchronous blocks require specific Setup/Hold time (TSU/TH) on IN ports and they provide specific Clock To Out (TCO) on OUT ports. - These TSU/TH/TCO values are determined by simulation of the device, by characterization, or by ‘binning’ at final test. The routing delays of each wire and mu ...
... All synchronous blocks require specific Setup/Hold time (TSU/TH) on IN ports and they provide specific Clock To Out (TCO) on OUT ports. - These TSU/TH/TCO values are determined by simulation of the device, by characterization, or by ‘binning’ at final test. The routing delays of each wire and mu ...
Secondary-side rectification for an LLC resonant converter featuring
... going edge) and is disabled once the rectifier is switched on. A de-bouncing delay (TPD_ON) is introduced after the current generator is activated in order to avoid false triggering of the gate driver. In some applications, RD1,2 is also needed to limit the current that can be injected into the DVS ...
... going edge) and is disabled once the rectifier is switched on. A de-bouncing delay (TPD_ON) is introduced after the current generator is activated in order to avoid false triggering of the gate driver. In some applications, RD1,2 is also needed to limit the current that can be injected into the DVS ...
Reconfigurable sticker label electronics manufactured from nanofibrillated cellulose-
... an electrochemically active conjugated polymer and an electrolyte, is that the very same material can be used for a versatility of device functions. The very same electrolyte component can be used both as the gate insulator in electrochemical and electrolyte-gated field effect transistors, and also ...
... an electrochemically active conjugated polymer and an electrolyte, is that the very same material can be used for a versatility of device functions. The very same electrolyte component can be used both as the gate insulator in electrochemical and electrolyte-gated field effect transistors, and also ...
Kintex-7 FPGA CES Errata Introduction
... any action brought by a third party) even if such damage or loss was reasonably foreseeable or Xilinx had been advised of the possibility of the same. Xilinx assumes no obligation to correct any errors contained in the Materials or to notify you of updates to the Materials or to product specificatio ...
... any action brought by a third party) even if such damage or loss was reasonably foreseeable or Xilinx had been advised of the possibility of the same. Xilinx assumes no obligation to correct any errors contained in the Materials or to notify you of updates to the Materials or to product specificatio ...
MAX9940 - Maxim Integrated
... low-voltage devices that provides circuit protection from high-voltage faults and ESD strikes. The device provides protection in digital communication lines such as 1-Wire and I2C protocols where large series resistance and capacitances cannot be used to provide protection due to their impact on VIL ...
... low-voltage devices that provides circuit protection from high-voltage faults and ESD strikes. The device provides protection in digital communication lines such as 1-Wire and I2C protocols where large series resistance and capacitances cannot be used to provide protection due to their impact on VIL ...
Semiconductor device
Semiconductor devices are electronic components that exploit the electronic properties of semiconductor materials, principally silicon, germanium, and gallium arsenide, as well as organic semiconductors. Semiconductor devices have replaced thermionic devices (vacuum tubes) in most applications. They use electronic conduction in the solid state as opposed to the gaseous state or thermionic emission in a high vacuum.Semiconductor devices are manufactured both as single discrete devices and as integrated circuits (ICs), which consist of a number—from a few (as low as two) to billions—of devices manufactured and interconnected on a single semiconductor substrate, or wafer.Semiconductor materials are useful because their behavior can be easily manipulated by the addition of impurities, known as doping. Semiconductor conductivity can be controlled by introduction of an electric or magnetic field, by exposure to light or heat, or by mechanical deformation of a doped monocrystalline grid; thus, semiconductors can make excellent sensors. Current conduction in a semiconductor occurs via mobile or ""free"" electrons and holes, collectively known as charge carriers. Doping a semiconductor such as silicon with a small amount of impurity atoms, such as phosphorus or boron, greatly increases the number of free electrons or holes within the semiconductor. When a doped semiconductor contains excess holes it is called ""p-type"", and when it contains excess free electrons it is known as ""n-type"", where p (positive for holes) or n (negative for electrons) is the sign of the charge of the majority mobile charge carriers. The semiconductor material used in devices is doped under highly controlled conditions in a fabrication facility, or fab, to control precisely the location and concentration of p- and n-type dopants. The junctions which form where n-type and p-type semiconductors join together are called p–n junctions.