Lattice FPGA Presentation??
... All synchronous blocks require specific Setup/Hold time (TSU/TH) on IN ports and they provide specific Clock To Out (TCO) on OUT ports. - These TSU/TH/TCO values are determined by simulation of the device, by characterization, or by ‘binning’ at final test. The routing delays of each wire and mu ...
... All synchronous blocks require specific Setup/Hold time (TSU/TH) on IN ports and they provide specific Clock To Out (TCO) on OUT ports. - These TSU/TH/TCO values are determined by simulation of the device, by characterization, or by ‘binning’ at final test. The routing delays of each wire and mu ...
ZXLD1366 Description Pin Assignments
... condition, the (-) input to the comparator is at ground and its output is high. This turns MN on and switches the LX pin low, causing current to flow from VIN to ground, via RS, L1 and the LED(s). The current rises at a rate determined by VIN and L1 to produce a voltage ramp (VSENSE) across RS. The ...
... condition, the (-) input to the comparator is at ground and its output is high. This turns MN on and switches the LX pin low, causing current to flow from VIN to ground, via RS, L1 and the LED(s). The current rises at a rate determined by VIN and L1 to produce a voltage ramp (VSENSE) across RS. The ...
Bilgisayar Destekli Tasarım Ders Notları
... A typical keyboard is shown in the above figure. It is divided into four different areas The first area " (A) " is for normal typewriting when entering text strings. The second one " (B) " is the function key area for simplified handling of common operations. The third area " (C) " is composed by s ...
... A typical keyboard is shown in the above figure. It is divided into four different areas The first area " (A) " is for normal typewriting when entering text strings. The second one " (B) " is the function key area for simplified handling of common operations. The third area " (C) " is composed by s ...
Self-test GFCI with wire leads spec sheet
... OR device is in reset state • If Amber light does not come ON, check if there is power to the branch • If Amber light does come ON, manually depress the RESET button to restore power to the device • If it does not reset, and/or the blinking continues, replace GFCI Device’s “end of life” indicatio ...
... OR device is in reset state • If Amber light does not come ON, check if there is power to the branch • If Amber light does come ON, manually depress the RESET button to restore power to the device • If it does not reset, and/or the blinking continues, replace GFCI Device’s “end of life” indicatio ...
Role of positive trapped charge in stress
... and the energy-loss measurement [11]. On the other side, Teramoto et al. claimed that excess leakage current induced by FN stress is attributed to injected holes produced by high-energy electrons [12]. Shuto et al. found that hot hole (HH) injection during source-side FN erase is the major cause for ...
... and the energy-loss measurement [11]. On the other side, Teramoto et al. claimed that excess leakage current induced by FN stress is attributed to injected holes produced by high-energy electrons [12]. Shuto et al. found that hot hole (HH) injection during source-side FN erase is the major cause for ...
led_notz.pdf
... The shape of the encapsulation acts as a lens magnifying the light from the LED chip. Additionally, the tint of the encapsulation affects the LED's visibility. If the encapsulation is diffused, the light emitted by the chip is more dispersed throughout the encapsulation. If the encapsulation is non- ...
... The shape of the encapsulation acts as a lens magnifying the light from the LED chip. Additionally, the tint of the encapsulation affects the LED's visibility. If the encapsulation is diffused, the light emitted by the chip is more dispersed throughout the encapsulation. If the encapsulation is non- ...
Characterization of an n-type 4 kV Silicon GTO for pulsed power
... Texas Tech University, Tyler Flack, May, 2015 24. Experimental results of TD @ VPS = 1 kV ...................................................... 34 25. Experimental results of TD @ VPS = 2 kV ...................................................... 35 26. Experimental results of TD @ VPS = 3 kV ..... ...
... Texas Tech University, Tyler Flack, May, 2015 24. Experimental results of TD @ VPS = 1 kV ...................................................... 34 25. Experimental results of TD @ VPS = 2 kV ...................................................... 35 26. Experimental results of TD @ VPS = 3 kV ..... ...
2005 Code Changes
... devices shall be selected by a licensed professional engineer engaged primarily in the design or maintenance of electrical installations. The selection shall be documented and stamped by the professional engineer. This documentation shall be available to those authorized to design, install, inspect, ...
... devices shall be selected by a licensed professional engineer engaged primarily in the design or maintenance of electrical installations. The selection shall be documented and stamped by the professional engineer. This documentation shall be available to those authorized to design, install, inspect, ...
mems accelerometers
... Mechanical Systems or MEMS is a term coined around 1989 by Prof. R. Howe [2] and others to describe an emerging research field, where mechanical elements, like cantilevers or membranes, had been manufactured at a scale more akin to microelectronics circuit than to lathe machining. It appears that th ...
... Mechanical Systems or MEMS is a term coined around 1989 by Prof. R. Howe [2] and others to describe an emerging research field, where mechanical elements, like cantilevers or membranes, had been manufactured at a scale more akin to microelectronics circuit than to lathe machining. It appears that th ...
R.M.A. Dawson, Z. Shen, M.H. Lu, J.C. Sturm et al, "Design of an improved pixel for a polysilicon active-matrix organic LED display," Dig. Soc. Info. Display Inter. Symp. pp. 11-14 (1998).
... Power dissipation in an OLED display is a critical issue. Measurements and modeling show that the temperature increase due to power dissipation in the active plate and in the OLEDs can be severe because the heat transfer from the display to the ambient is relatively inefficient.5 It is essential tha ...
... Power dissipation in an OLED display is a critical issue. Measurements and modeling show that the temperature increase due to power dissipation in the active plate and in the OLEDs can be severe because the heat transfer from the display to the ambient is relatively inefficient.5 It is essential tha ...
Section 1 TVS Diode Definition and General Electronics Applications
... • The opening of the primary circuit of a transformer generates extreme voltage transients. Transients in excess of ten times normal voltage have been observed across power semiconductors when this type of switching occurs. Fault with inductive power source • If a short develops on any power system, ...
... • The opening of the primary circuit of a transformer generates extreme voltage transients. Transients in excess of ten times normal voltage have been observed across power semiconductors when this type of switching occurs. Fault with inductive power source • If a short develops on any power system, ...
IGBT Module for Advanced NPC Topology
... inverters. The IGBT (insulated gate bipolar transistor) module used for A-NPC minimized power loss by using a 6th generation IGBT and FWD (free wheeling diode), as well as a 2nd generation RB-IGBT (reverse blocking IGBT). The internal inductance between each of the main terminals is less than 40 nH, ...
... inverters. The IGBT (insulated gate bipolar transistor) module used for A-NPC minimized power loss by using a 6th generation IGBT and FWD (free wheeling diode), as well as a 2nd generation RB-IGBT (reverse blocking IGBT). The internal inductance between each of the main terminals is less than 40 nH, ...
CMOS VLSI Design 4th Ed.
... Integrated circuits: many transistors on one chip. Very Large Scale Integration (VLSI): bucketloads! Complementary Metal Oxide Semiconductor – Fast, cheap, low power transistors Today: How to build your own simple CMOS chip – CMOS transistors – Building logic gates from transistors – Transis ...
... Integrated circuits: many transistors on one chip. Very Large Scale Integration (VLSI): bucketloads! Complementary Metal Oxide Semiconductor – Fast, cheap, low power transistors Today: How to build your own simple CMOS chip – CMOS transistors – Building logic gates from transistors – Transis ...
Silicon Photonics 143
... to obtain carrier confinement and efficient emission of infrared wavelengths include using Ge/Si quantum dots [xi] or crystalline defects [xii]. In all these approaches the use of erbium as the dopant can be changed to allow emission at other wavelengths; e.g., ytterbium or terbium allows emission a ...
... to obtain carrier confinement and efficient emission of infrared wavelengths include using Ge/Si quantum dots [xi] or crystalline defects [xii]. In all these approaches the use of erbium as the dopant can be changed to allow emission at other wavelengths; e.g., ytterbium or terbium allows emission a ...
USB Dedicated Charging Port Controller (Rev. C)
... required to ensure host and client-side devices meet the power management requirements. Traditionally, USB host ports following the USB 2.0 Specification must provide at least 500 mA to downstream client-side devices. Because multiple USB devices can be attached to a single USB port through a bus-po ...
... required to ensure host and client-side devices meet the power management requirements. Traditionally, USB host ports following the USB 2.0 Specification must provide at least 500 mA to downstream client-side devices. Because multiple USB devices can be attached to a single USB port through a bus-po ...
Common Failure Mechanisms in Microelectronics
... reliability tests that expose the various sample sets to different stress conditions, after which the samples are tested for any degradation in quality after the stress. Since reliability stresses are often destructive, only a sample population is used for reliability testing. As such, the assessmen ...
... reliability tests that expose the various sample sets to different stress conditions, after which the samples are tested for any degradation in quality after the stress. Since reliability stresses are often destructive, only a sample population is used for reliability testing. As such, the assessmen ...
2-Channel PicoGuard XP® ESD Clamp Protection Array CM1231-02SO
... out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different ap ...
... out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different ap ...
i `[105
... an image processor 80 that receives digitiZed pixel signals from all pixel circuits 100 of the array and provides an image output. The imaging device 20 includes a saturation control signal in accordance with the various embodiments of the invention which controls an operation of the pixel circuit 1 ...
... an image processor 80 that receives digitiZed pixel signals from all pixel circuits 100 of the array and provides an image output. The imaging device 20 includes a saturation control signal in accordance with the various embodiments of the invention which controls an operation of the pixel circuit 1 ...
Semiconductor device
Semiconductor devices are electronic components that exploit the electronic properties of semiconductor materials, principally silicon, germanium, and gallium arsenide, as well as organic semiconductors. Semiconductor devices have replaced thermionic devices (vacuum tubes) in most applications. They use electronic conduction in the solid state as opposed to the gaseous state or thermionic emission in a high vacuum.Semiconductor devices are manufactured both as single discrete devices and as integrated circuits (ICs), which consist of a number—from a few (as low as two) to billions—of devices manufactured and interconnected on a single semiconductor substrate, or wafer.Semiconductor materials are useful because their behavior can be easily manipulated by the addition of impurities, known as doping. Semiconductor conductivity can be controlled by introduction of an electric or magnetic field, by exposure to light or heat, or by mechanical deformation of a doped monocrystalline grid; thus, semiconductors can make excellent sensors. Current conduction in a semiconductor occurs via mobile or ""free"" electrons and holes, collectively known as charge carriers. Doping a semiconductor such as silicon with a small amount of impurity atoms, such as phosphorus or boron, greatly increases the number of free electrons or holes within the semiconductor. When a doped semiconductor contains excess holes it is called ""p-type"", and when it contains excess free electrons it is known as ""n-type"", where p (positive for holes) or n (negative for electrons) is the sign of the charge of the majority mobile charge carriers. The semiconductor material used in devices is doped under highly controlled conditions in a fabrication facility, or fab, to control precisely the location and concentration of p- and n-type dopants. The junctions which form where n-type and p-type semiconductors join together are called p–n junctions.