FDMF6708N — Extra-Small, High-Performance, High-Frequency DrMOS Module FDMF6708N — Extra-Small, Hig Benefits
... Switch node input. Provides return for high-side bootstrapped driver and acts as a sense point for the adaptive shoot-through protection. ...
... Switch node input. Provides return for high-side bootstrapped driver and acts as a sense point for the adaptive shoot-through protection. ...
A 10nW 12-bit Accurate Analog Storage Cell with 10aA Leakage
... cascoded wide-output swing operational transconductance amplifer (OTA). In this figure the device under test (DUT) is an NMOS transistor, but the same structure was also used to characterize PMOS leakage. The current-integrator topology, when built using a high-gain amplifier, possesses several key ...
... cascoded wide-output swing operational transconductance amplifer (OTA). In this figure the device under test (DUT) is an NMOS transistor, but the same structure was also used to characterize PMOS leakage. The current-integrator topology, when built using a high-gain amplifier, possesses several key ...
Z4905147150
... Adders are important and heart of computational circuits. Many of complex arithmetic circuits are based on addition and it is often one of the speed limiting elements [1]. Hence, optimization of the adder in speed and power consumption must be pursued. These adder cells aimed to reduce power consump ...
... Adders are important and heart of computational circuits. Many of complex arithmetic circuits are based on addition and it is often one of the speed limiting elements [1]. Hence, optimization of the adder in speed and power consumption must be pursued. These adder cells aimed to reduce power consump ...
Physics of Millimeter-Wave Power InAlAs/InGaAs Heterostructure Field-Effect Transistors
... It is important to note, though, that the detailed physical origins of the kink in the two models are significantly different—in partially-depleted SOI, the kink arises from forward biasing the source-body junction,8 whereas in this model, the kink is a result of hole accumulation in the extrinsic s ...
... It is important to note, though, that the detailed physical origins of the kink in the two models are significantly different—in partially-depleted SOI, the kink arises from forward biasing the source-body junction,8 whereas in this model, the kink is a result of hole accumulation in the extrinsic s ...
ieee transactions on circuits and systems
... For the nLDMOS in the 0.35- m 24-V BCD process, the drain and source/body regions are defined in different active areas, as shown in Fig. 2(a). The gap between the N drain and the polygate of the nLDMOS device is thereby a field oxide (FOX) region. A device cross-sectional view along the line of the ...
... For the nLDMOS in the 0.35- m 24-V BCD process, the drain and source/body regions are defined in different active areas, as shown in Fig. 2(a). The gap between the N drain and the polygate of the nLDMOS device is thereby a field oxide (FOX) region. A device cross-sectional view along the line of the ...
Power-Up 3-State (PU3S) Circuits in TI Standard Logic Devices
... power-up sequence might be required for some devices, while others may not need one. With a clear idea of the different functionalities, such as IOFF, PU3S, and BIAS VCC, the validity of a power-up sequence can be understood. Some logic device families (for example, GTLP and VME) have full live-inse ...
... power-up sequence might be required for some devices, while others may not need one. With a clear idea of the different functionalities, such as IOFF, PU3S, and BIAS VCC, the validity of a power-up sequence can be understood. Some logic device families (for example, GTLP and VME) have full live-inse ...
MT-092: Electrostatic Discharge (ESD)
... are mounted to a printed circuit board. That is an out-of-circuit state. In such a condition, ICs are completely at the mercy of their environment as to what stressful voltage surges they may see. Most often the harmful voltage surges come from electrostatic discharge, or, as more commonly reference ...
... are mounted to a printed circuit board. That is an out-of-circuit state. In such a condition, ICs are completely at the mercy of their environment as to what stressful voltage surges they may see. Most often the harmful voltage surges come from electrostatic discharge, or, as more commonly reference ...
Configuration EPROMs Features for FLEX Devices
... nCASC and nCS pins provide handshaking between multiple Configuration EPROMs, allowing several cascaded EPC1 or EPC1213 devices to serially configure multiple FLEX 8000 devices. The EPC1441, EPC1064 and EPC1064V do not support data cascading. The EPC1 and EPC1441 can replace the EPC1213, EPC1064, an ...
... nCASC and nCS pins provide handshaking between multiple Configuration EPROMs, allowing several cascaded EPC1 or EPC1213 devices to serially configure multiple FLEX 8000 devices. The EPC1441, EPC1064 and EPC1064V do not support data cascading. The EPC1 and EPC1441 can replace the EPC1213, EPC1064, an ...
Design With PIN Diodes
... Under reverse bias, the diode should not be biased beyond its DC voltage rating, VR. The avalanche or bulk breakdown voltage, VB, of a PIN diode is proportional to the I region width, W, and is always higher than VR. In a typical application, maximum negative voltage swing should never exceed VB. An ...
... Under reverse bias, the diode should not be biased beyond its DC voltage rating, VR. The avalanche or bulk breakdown voltage, VB, of a PIN diode is proportional to the I region width, W, and is always higher than VR. In a typical application, maximum negative voltage swing should never exceed VB. An ...
BDTIC CoolMOS™ Primary Side MOSFET Selection for LLC Topology
... Primary side MOSFET Selection for LLC topology Zero Voltage Switching of LLC converter. For identifying the required dead time, two important limitations must be considered. One of them depends on the power MOSFET’s minimum required dead time, which can be obtained from the datasheet easily, by con ...
... Primary side MOSFET Selection for LLC topology Zero Voltage Switching of LLC converter. For identifying the required dead time, two important limitations must be considered. One of them depends on the power MOSFET’s minimum required dead time, which can be obtained from the datasheet easily, by con ...
ES_LPC2377 Errata sheet LPC2377 Rev. 6.1 — 1 July 2012 Errata sheet
... device (VDD(3V3) pin, VDD(DCDC)(3V3) pin). The input voltage range on the VBAT pin is 2.0 V minimum to 3.6 V maximum for temperature 40 C to +85 C. Normally, if the RTC and the Battery RAM are not used, the VBAT pin can be left floating. Problem: If the VBAT pin is left floating, the internal res ...
... device (VDD(3V3) pin, VDD(DCDC)(3V3) pin). The input voltage range on the VBAT pin is 2.0 V minimum to 3.6 V maximum for temperature 40 C to +85 C. Normally, if the RTC and the Battery RAM are not used, the VBAT pin can be left floating. Problem: If the VBAT pin is left floating, the internal res ...
View/Open - Library@Atmiya
... system performed as desired with a 10cm. diameter antenna attached to the transponder. The base station is built by using the popular 8051 family micro controller. It gets the tag ID and if the tag is stored in its memory then the microcontroller will allow the person inside. RFID reader module, are ...
... system performed as desired with a 10cm. diameter antenna attached to the transponder. The base station is built by using the popular 8051 family micro controller. It gets the tag ID and if the tag is stored in its memory then the microcontroller will allow the person inside. RFID reader module, are ...
CALCE Prediction of Potential Failures Risks in Toyota Vehicles
... will detect fewer than 2% of bridging whiskers, and most ohm-meters apply less voltage and do not excite a short during the time of investigation – This also applies to many other circuits: they survive whiskers by failing to break down the oxide ...
... will detect fewer than 2% of bridging whiskers, and most ohm-meters apply less voltage and do not excite a short during the time of investigation – This also applies to many other circuits: they survive whiskers by failing to break down the oxide ...
Characterization of an n-type 4 kV Silicon GTO for pulsed power
... Texas Tech University, Tyler Flack, May, 2015 50% its maximum amplitude. Flatness of a pulses’ plateau region is the how close the plateau stays to a constant value. These pulse characteristics are shown in figure 2. ...
... Texas Tech University, Tyler Flack, May, 2015 50% its maximum amplitude. Flatness of a pulses’ plateau region is the how close the plateau stays to a constant value. These pulse characteristics are shown in figure 2. ...
DSD project
... MCLR to be high. After the time-out period, which is typically 18 ms, it will RESET the reset latch and thus end the on-chip RESET signal. A power-up example where MCLR is not tied to VDD is shown in Figure 5-3. VDD is allowed to rise and stabilize before bringing MCLR high. The chip will actually c ...
... MCLR to be high. After the time-out period, which is typically 18 ms, it will RESET the reset latch and thus end the on-chip RESET signal. A power-up example where MCLR is not tied to VDD is shown in Figure 5-3. VDD is allowed to rise and stabilize before bringing MCLR high. The chip will actually c ...
Lecture 45
... same way as the periodic potential in a crystal affects the electron motion by defining allowed and forbidden electronic energy bands. Photonic crystals contain regularly repeating internal regions of high and low dielectric constant. Photons (as waves) propagate through this structure - or not - de ...
... same way as the periodic potential in a crystal affects the electron motion by defining allowed and forbidden electronic energy bands. Photonic crystals contain regularly repeating internal regions of high and low dielectric constant. Photons (as waves) propagate through this structure - or not - de ...
Semiconductor device
Semiconductor devices are electronic components that exploit the electronic properties of semiconductor materials, principally silicon, germanium, and gallium arsenide, as well as organic semiconductors. Semiconductor devices have replaced thermionic devices (vacuum tubes) in most applications. They use electronic conduction in the solid state as opposed to the gaseous state or thermionic emission in a high vacuum.Semiconductor devices are manufactured both as single discrete devices and as integrated circuits (ICs), which consist of a number—from a few (as low as two) to billions—of devices manufactured and interconnected on a single semiconductor substrate, or wafer.Semiconductor materials are useful because their behavior can be easily manipulated by the addition of impurities, known as doping. Semiconductor conductivity can be controlled by introduction of an electric or magnetic field, by exposure to light or heat, or by mechanical deformation of a doped monocrystalline grid; thus, semiconductors can make excellent sensors. Current conduction in a semiconductor occurs via mobile or ""free"" electrons and holes, collectively known as charge carriers. Doping a semiconductor such as silicon with a small amount of impurity atoms, such as phosphorus or boron, greatly increases the number of free electrons or holes within the semiconductor. When a doped semiconductor contains excess holes it is called ""p-type"", and when it contains excess free electrons it is known as ""n-type"", where p (positive for holes) or n (negative for electrons) is the sign of the charge of the majority mobile charge carriers. The semiconductor material used in devices is doped under highly controlled conditions in a fabrication facility, or fab, to control precisely the location and concentration of p- and n-type dopants. The junctions which form where n-type and p-type semiconductors join together are called p–n junctions.