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BJT
BJT

... types are available to the designer. Here we should mention that the characteristics of the bipolar transistor are so well understood that one is able to design transistor circuits whose performance is remarkably predictable and quite insensitive to variations in device parameters. The BJT is still ...
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... product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incor ...
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... Frequency converters, medical devices and UPS systems are seeing increasing use in industry. Smooth DC residual currents or currents with low residual ripple may occur in the event of faults on these devices. Type A residual current protective devices are unable to detect these smooth DC residual cu ...
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Optical Properties of Rutile Single Crystals Grown Under Pressure
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... FZ-grown crystals was superior to that of commercially available Verneuil-grown rutile crystals [4,5]. Therefore, demands for the optical communication devices have stimulated the application of a floating zone method for the growth of rutile single crystals although conventional-FZ grown rutile cry ...
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... handling 100A and more. They are used in a wide variety of electric control units (ECUs) in the car. They are used to control electric motors, solenoid valves or basically to turn on or off an electric loads. Along with nearly all of these loads goes some kind of inductance, either a load inductance ...
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... flexibility and the convenience operation offered by the solid state lasing media are taken into consideration while the design of NLO materials8. Hence dyes were also used as dopants for enhancing the optical characteristics of crystals. A review report presents the significance of Dye Inclusion Cr ...
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... If multiple LEDs are to be driven by individual pins on the same CPLD, there are a few guidelines that may be helpful. These help to reduce the effect of ground bounce due to multiple outputs switching simultaneously, and hence avoid corrupting the operation of other devices driven by the CPLD. ...
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Semiconductor device



Semiconductor devices are electronic components that exploit the electronic properties of semiconductor materials, principally silicon, germanium, and gallium arsenide, as well as organic semiconductors. Semiconductor devices have replaced thermionic devices (vacuum tubes) in most applications. They use electronic conduction in the solid state as opposed to the gaseous state or thermionic emission in a high vacuum.Semiconductor devices are manufactured both as single discrete devices and as integrated circuits (ICs), which consist of a number—from a few (as low as two) to billions—of devices manufactured and interconnected on a single semiconductor substrate, or wafer.Semiconductor materials are useful because their behavior can be easily manipulated by the addition of impurities, known as doping. Semiconductor conductivity can be controlled by introduction of an electric or magnetic field, by exposure to light or heat, or by mechanical deformation of a doped monocrystalline grid; thus, semiconductors can make excellent sensors. Current conduction in a semiconductor occurs via mobile or ""free"" electrons and holes, collectively known as charge carriers. Doping a semiconductor such as silicon with a small amount of impurity atoms, such as phosphorus or boron, greatly increases the number of free electrons or holes within the semiconductor. When a doped semiconductor contains excess holes it is called ""p-type"", and when it contains excess free electrons it is known as ""n-type"", where p (positive for holes) or n (negative for electrons) is the sign of the charge of the majority mobile charge carriers. The semiconductor material used in devices is doped under highly controlled conditions in a fabrication facility, or fab, to control precisely the location and concentration of p- and n-type dopants. The junctions which form where n-type and p-type semiconductors join together are called p–n junctions.
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