Design and Analysis of a Novel Multilevel Active-Clamped Power-Converter T
... ABSTRACT Multilevel converter technology has been receiving increasing attention during the last years due to its important advantages compared to conventional two-level conversion. Multilevel converters reduce the voltage across each semiconductor. These converters also synthesize waveforms with ...
... ABSTRACT Multilevel converter technology has been receiving increasing attention during the last years due to its important advantages compared to conventional two-level conversion. Multilevel converters reduce the voltage across each semiconductor. These converters also synthesize waveforms with ...
Heterogeneous Nanonucleants - Manuscript - FINAL
... functionalized dielectric surfaces (average roughness 10-15nm) for templating single-crystal growth of various organic semiconductors [28, 29]. For morphology control of solution processed solar cells and electronics, Treat et al. applied organic additives to control the nucleation density and domai ...
... functionalized dielectric surfaces (average roughness 10-15nm) for templating single-crystal growth of various organic semiconductors [28, 29]. For morphology control of solution processed solar cells and electronics, Treat et al. applied organic additives to control the nucleation density and domai ...
thesis paper
... device and that in the channel of the device is balanced by three electrode charges: the gate, the source and the drain. As drain voltage is increased, the depletion region of the p-n junction between the drain and body increases in size and extends under the gate, so the drain assumes a greater por ...
... device and that in the channel of the device is balanced by three electrode charges: the gate, the source and the drain. As drain voltage is increased, the depletion region of the p-n junction between the drain and body increases in size and extends under the gate, so the drain assumes a greater por ...
Microwave Synthesis of Cuprous Oxide Micro
... Cuprous oxide micro-/nanocrystals were synthesized by using a simple liquid phase reduction process under microwave irradiation. Copper sulfate was used as the starting materials and macromolecule surfactants served as the templates. The morphologies phase and optical properties of them are characte ...
... Cuprous oxide micro-/nanocrystals were synthesized by using a simple liquid phase reduction process under microwave irradiation. Copper sulfate was used as the starting materials and macromolecule surfactants served as the templates. The morphologies phase and optical properties of them are characte ...
EIAJ ED-4701/300
... The revision of the standards and new numbering system have been deliberated by "Sub-Committee on Semiconductor Devices Reliability" of the Technical Standardization Committee on Semiconductor Devices/Semiconductor Devices Reliability Group from Apr., 2000. Though to issue as a separate standard eve ...
... The revision of the standards and new numbering system have been deliberated by "Sub-Committee on Semiconductor Devices Reliability" of the Technical Standardization Committee on Semiconductor Devices/Semiconductor Devices Reliability Group from Apr., 2000. Though to issue as a separate standard eve ...
characterization, modeling, and design of esd
... Forming an industrial partnership with AMD provided an excellent opportunity to conduct research on a leading-edge technology, and during my tenure there as a graduate student I received help from many people I am now happy to call my coworkers. Kurt Taylor took me under his management basically sig ...
... Forming an industrial partnership with AMD provided an excellent opportunity to conduct research on a leading-edge technology, and during my tenure there as a graduate student I received help from many people I am now happy to call my coworkers. Kurt Taylor took me under his management basically sig ...
4316C-part1
... 5.2.3 baseline — for the purposes of this document, “baseline” refers to operating conditions, including process chemistry, for which the equipment was designed and manufactured. 5.2.4 breathing zone — imaginary globe, of 600 mm (two foot) radius, surrounding the head. 5.2.5 capture velocity — the a ...
... 5.2.3 baseline — for the purposes of this document, “baseline” refers to operating conditions, including process chemistry, for which the equipment was designed and manufactured. 5.2.4 breathing zone — imaginary globe, of 600 mm (two foot) radius, surrounding the head. 5.2.5 capture velocity — the a ...
ANTENNA SYSTEMS
... RCS reduction/modification, false Doppler, and similar issues. It is not a new concept. A few reports began to appear in papers published in the early 1990’s, presumably dealing with less sensitive topics arising from work carried out in the previous decade. Figure 1 appears in a paper dating from 1 ...
... RCS reduction/modification, false Doppler, and similar issues. It is not a new concept. A few reports began to appear in papers published in the early 1990’s, presumably dealing with less sensitive topics arising from work carried out in the previous decade. Figure 1 appears in a paper dating from 1 ...
211Notes05-CombinationalComponents
... On a real 74LS47 the outputs for 10, …15 are not don’t cares. They would indicate errors in BCD input. We could use the period for that. period(D,C,B,A)=SUM( dc(D,C,B,A) = SUM( ...
... On a real 74LS47 the outputs for 10, …15 are not don’t cares. They would indicate errors in BCD input. We could use the period for that. period(D,C,B,A)=SUM( dc(D,C,B,A) = SUM( ...
the pin diode circuit designers` handbook
... This chapter presents a general overview of PIN diode operating characteristics to form an adequate basis for the subsequent chapters on the various PIN diode functional circuits. Supplemental material on PIN Diode Physics is included in the Appendices section of the Handbook. A microwave PIN diode ...
... This chapter presents a general overview of PIN diode operating characteristics to form an adequate basis for the subsequent chapters on the various PIN diode functional circuits. Supplemental material on PIN Diode Physics is included in the Appendices section of the Handbook. A microwave PIN diode ...
Sand. Made up of 25 percent silicon, is, after oxygen, the
... Multiple metal layers are created to interconnects (think wires) in between the various transistors. How these connections have to be œwired is determined by the architecture and design teams that develop the functionality of the respective processor (for example, Intel’s Core i7 processor). While c ...
... Multiple metal layers are created to interconnects (think wires) in between the various transistors. How these connections have to be œwired is determined by the architecture and design teams that develop the functionality of the respective processor (for example, Intel’s Core i7 processor). While c ...
asic 2001: formatting and submitting your paper
... has become increasingly troubling as the SRAM cell size is reduced ,such as short channel effect ,higher DIBL, poor sub threshold swing collectively known as SCE. The Fin type mosfet(FinFET)is one of the most desired device to scaled CMOS devise. To solve this problem 3-D device structure could be a ...
... has become increasingly troubling as the SRAM cell size is reduced ,such as short channel effect ,higher DIBL, poor sub threshold swing collectively known as SCE. The Fin type mosfet(FinFET)is one of the most desired device to scaled CMOS devise. To solve this problem 3-D device structure could be a ...
JEDEC STANDARD
... anode: The p-type region from which the forward current flows within a semiconductor diode. NOTE In Schottky diodes, usually the barrier metal replaces the p-type semiconductor region and the remaining semiconductor region is n-type; however, some Schottky diodes have been made with the barrier meta ...
... anode: The p-type region from which the forward current flows within a semiconductor diode. NOTE In Schottky diodes, usually the barrier metal replaces the p-type semiconductor region and the remaining semiconductor region is n-type; however, some Schottky diodes have been made with the barrier meta ...
Ultra-Low Noise and Highly Linear Two-Stage Low Noise Amplifier (LNA)
... receiver. The LNA amplifies the received signal and boosts its power above the noise level produced by subsequent circuits. In a radio frequency (RF) signal receiving device such as a cellular phone and a base station of a wireless communication system, a received signal has very weak intensity and ...
... receiver. The LNA amplifies the received signal and boosts its power above the noise level produced by subsequent circuits. In a radio frequency (RF) signal receiving device such as a cellular phone and a base station of a wireless communication system, a received signal has very weak intensity and ...
Analog integrated circuit design in ultra
... Tunneling-Induced Gate Current” I, Eric Bohannon, hereby grant permission to the Wallace Library of the Rochester Institute of Technology to reproduce my dissertation in whole or in part. Any reproduction will not be for commercial use or profit. ...
... Tunneling-Induced Gate Current” I, Eric Bohannon, hereby grant permission to the Wallace Library of the Rochester Institute of Technology to reproduce my dissertation in whole or in part. Any reproduction will not be for commercial use or profit. ...
Device Design for Sub-0.1 for Sample and Hold Circuits m MOSFETs
... Yun Xu and Yu-Lin Chao for maintaining a happy and encouraging work environment in the lab. Special thanks to the two new students in the lab, Ritesh and Gaurav, for proofreading this manuscript. I wish them all great success in their future endeavors. Thanks to Jun for giving me the occasional late ...
... Yun Xu and Yu-Lin Chao for maintaining a happy and encouraging work environment in the lab. Special thanks to the two new students in the lab, Ritesh and Gaurav, for proofreading this manuscript. I wish them all great success in their future endeavors. Thanks to Jun for giving me the occasional late ...
the electromagnetic pulse and its effects
... complex mechanism, in the generation of an EMP that moves down toward the earth. The pulse rises to a peak and then decreases, both taking place more rapidly than for a sudace burst; as a result more of the electromagnetic energy appears in the higher frequency range (§ 11.63). The strength of the e ...
... complex mechanism, in the generation of an EMP that moves down toward the earth. The pulse rises to a peak and then decreases, both taking place more rapidly than for a sudace burst; as a result more of the electromagnetic energy appears in the higher frequency range (§ 11.63). The strength of the e ...
AN-9716 Reset Timers Applications
... power PFET in series with the battery supply. By using the push-pull output, the reset timer immediately shuts the power FET off when the reset timer output is driven HIGH. The duration of the output pulse is not important because shutting off the PFET starves the remaining circuitry of ...
... power PFET in series with the battery supply. By using the push-pull output, the reset timer immediately shuts the power FET off when the reset timer output is driven HIGH. The duration of the output pulse is not important because shutting off the PFET starves the remaining circuitry of ...
Semiconductor device
Semiconductor devices are electronic components that exploit the electronic properties of semiconductor materials, principally silicon, germanium, and gallium arsenide, as well as organic semiconductors. Semiconductor devices have replaced thermionic devices (vacuum tubes) in most applications. They use electronic conduction in the solid state as opposed to the gaseous state or thermionic emission in a high vacuum.Semiconductor devices are manufactured both as single discrete devices and as integrated circuits (ICs), which consist of a number—from a few (as low as two) to billions—of devices manufactured and interconnected on a single semiconductor substrate, or wafer.Semiconductor materials are useful because their behavior can be easily manipulated by the addition of impurities, known as doping. Semiconductor conductivity can be controlled by introduction of an electric or magnetic field, by exposure to light or heat, or by mechanical deformation of a doped monocrystalline grid; thus, semiconductors can make excellent sensors. Current conduction in a semiconductor occurs via mobile or ""free"" electrons and holes, collectively known as charge carriers. Doping a semiconductor such as silicon with a small amount of impurity atoms, such as phosphorus or boron, greatly increases the number of free electrons or holes within the semiconductor. When a doped semiconductor contains excess holes it is called ""p-type"", and when it contains excess free electrons it is known as ""n-type"", where p (positive for holes) or n (negative for electrons) is the sign of the charge of the majority mobile charge carriers. The semiconductor material used in devices is doped under highly controlled conditions in a fabrication facility, or fab, to control precisely the location and concentration of p- and n-type dopants. The junctions which form where n-type and p-type semiconductors join together are called p–n junctions.