Chapter 1 - Advanced Silicon Device and Process Laboratory
... speed for optical communications. We focus on the methodology of C incorporations, and the design of ultra thin bases. The position and site of C incorporated into the stack SiGe base regions are closely relevant to DC and RF performances of bipolar devices. We had characterized the SiGe/SiGeC HBTs ...
... speed for optical communications. We focus on the methodology of C incorporations, and the design of ultra thin bases. The position and site of C incorporated into the stack SiGe base regions are closely relevant to DC and RF performances of bipolar devices. We had characterized the SiGe/SiGeC HBTs ...
TSOP361.., TSOP363.., TSOP365.. IR Receiver Modules for
... miniaturized SMD IR receiver modules for infrared remote control systems. PIN diode and preamplifier are assembled on a lead frame, the epoxy package contains an IR filter. The demodulated output signal can be directly connected to a microprocessor for decoding. ...
... miniaturized SMD IR receiver modules for infrared remote control systems. PIN diode and preamplifier are assembled on a lead frame, the epoxy package contains an IR filter. The demodulated output signal can be directly connected to a microprocessor for decoding. ...
4241_ECs
... measurement of electrostatic charge. No methods of preconditioning the surface prior to measurements and no methods of characterizing the basic electrostatic performance of materials, such as tribocharging, resistance/resistivity, and decay rate are a part of this document. Measurements made using t ...
... measurement of electrostatic charge. No methods of preconditioning the surface prior to measurements and no methods of characterizing the basic electrostatic performance of materials, such as tribocharging, resistance/resistivity, and decay rate are a part of this document. Measurements made using t ...
the zero-pole transformation noise reduction technique for
... of systems that have an input signal in the form of charge or a current pulse. Applications for such systems include photography, radar imaging, medical imaging, X-ray fluorescence applications and particle-physics experiments. A charge amplifier is used to convert the incoming charge or current to ...
... of systems that have an input signal in the form of charge or a current pulse. Applications for such systems include photography, radar imaging, medical imaging, X-ray fluorescence applications and particle-physics experiments. A charge amplifier is used to convert the incoming charge or current to ...
Designing a Universal Serial Bus (USB) Device Using the Cypress
... Applications cannot communicate directly with USB devices, and must do all communications through a device driver. In turn, the device driver will communicate with the USB device through the USB system drivers. The device driver opens pipes to endpoints on the USB device. It uses these pipes for all ...
... Applications cannot communicate directly with USB devices, and must do all communications through a device driver. In turn, the device driver will communicate with the USB device through the USB system drivers. The device driver opens pipes to endpoints on the USB device. It uses these pipes for all ...
ESD Myths and the Latency Controversy
... However, to keep material costs down, they are often made of insulating plastic. EMC design issues are then addressed using other techniques. In this case, a system was designed using plastic faceplates. The system was in low-level production for more than a year without any indication of a signific ...
... However, to keep material costs down, they are often made of insulating plastic. EMC design issues are then addressed using other techniques. In this case, a system was designed using plastic faceplates. The system was in low-level production for more than a year without any indication of a signific ...
CD4011BC Quad 2-Input NAND Buffered B Series Gate
... The CD4001BC and CD4011BC quad gates are monolithic complementary MOS (CMOS) integrated circuits constructed with N- and P-channel enhancement mode transistors. They have equal source and sink current capabilities and conform to standard B series output drive. The devices also have buffered outputs ...
... The CD4001BC and CD4011BC quad gates are monolithic complementary MOS (CMOS) integrated circuits constructed with N- and P-channel enhancement mode transistors. They have equal source and sink current capabilities and conform to standard B series output drive. The devices also have buffered outputs ...
UT64CAN333x CAN FD Transceivers
... 11898-2 and 11898-5 standards, operating as the physical layer between the bus and the CAN controller. All of the transceivers operate on a single +3.3 V power supply and receive data with an input common-mode in the range of -7 V to +12 V. The CANH and CANL outputs are fault protected against short ...
... 11898-2 and 11898-5 standards, operating as the physical layer between the bus and the CAN controller. All of the transceivers operate on a single +3.3 V power supply and receive data with an input common-mode in the range of -7 V to +12 V. The CANH and CANL outputs are fault protected against short ...
Residual Current Protective Devices
... currents. Another version in this device group is the residual current unit (RC unit). The customer can then mount the miniature circuit breaker versions suitable for a particular application (characteristic, rated current, switching capacity) on these RC units. Once assembled, these devices perform ...
... currents. Another version in this device group is the residual current unit (RC unit). The customer can then mount the miniature circuit breaker versions suitable for a particular application (characteristic, rated current, switching capacity) on these RC units. Once assembled, these devices perform ...
BDTIC
... More and more external electronic interfaces are being implemented in modern electronic devices. The interfaces are used for interaction between the machine and the user/operator or to provide connectivity to other electronic devices. These electronic interfaces can be realized by a connector provid ...
... More and more external electronic interfaces are being implemented in modern electronic devices. The interfaces are used for interaction between the machine and the user/operator or to provide connectivity to other electronic devices. These electronic interfaces can be realized by a connector provid ...
4. Chapter Summary
... The general area of electronics began about a century ago and proved instrumental in the radio and radar communications used during the two world wars. Early systems incorporated “vacuum tubes,” amplifying devices that operated with the flow of electrons between plates in a vacuum chamber. However, ...
... The general area of electronics began about a century ago and proved instrumental in the radio and radar communications used during the two world wars. Early systems incorporated “vacuum tubes,” amplifying devices that operated with the flow of electrons between plates in a vacuum chamber. However, ...
ESD DESIGN COOKBOOK
... Typical examples of triboelectric charging followed by a CDM discharge include: • ICs become charged by sliding down an Automatic Test Equipment (ATE) handler chute and then corner pins discharge to a grounded stop pin. • ICs become charged by sliding down a plastic shipping tube and then corner pin ...
... Typical examples of triboelectric charging followed by a CDM discharge include: • ICs become charged by sliding down an Automatic Test Equipment (ATE) handler chute and then corner pins discharge to a grounded stop pin. • ICs become charged by sliding down a plastic shipping tube and then corner pin ...
RM100 MooreHawke ROUTE-MASTER Fieldbus
... with 500m (1640ft) cable, even in areas classified as IIC/Groups A and B. The use of both trunks in this way is optional, and single trunk connection may be preferred where total cable length is short and device numbers and/or total current draw within the segment is low. In single trunk application ...
... with 500m (1640ft) cable, even in areas classified as IIC/Groups A and B. The use of both trunks in this way is optional, and single trunk connection may be preferred where total cable length is short and device numbers and/or total current draw within the segment is low. In single trunk application ...
TURCK IM Series Interface Modules Application Guide
... The IM series uses state of the art circuitry and the latest technology to produce an unsurpassed product that provides the best explosion protection interfaces on the market. The IM series of Intrinsically Safe Interface Devices is application specific: Each device is designed to work in a specific ...
... The IM series uses state of the art circuitry and the latest technology to produce an unsurpassed product that provides the best explosion protection interfaces on the market. The IM series of Intrinsically Safe Interface Devices is application specific: Each device is designed to work in a specific ...
Semiconductor device
Semiconductor devices are electronic components that exploit the electronic properties of semiconductor materials, principally silicon, germanium, and gallium arsenide, as well as organic semiconductors. Semiconductor devices have replaced thermionic devices (vacuum tubes) in most applications. They use electronic conduction in the solid state as opposed to the gaseous state or thermionic emission in a high vacuum.Semiconductor devices are manufactured both as single discrete devices and as integrated circuits (ICs), which consist of a number—from a few (as low as two) to billions—of devices manufactured and interconnected on a single semiconductor substrate, or wafer.Semiconductor materials are useful because their behavior can be easily manipulated by the addition of impurities, known as doping. Semiconductor conductivity can be controlled by introduction of an electric or magnetic field, by exposure to light or heat, or by mechanical deformation of a doped monocrystalline grid; thus, semiconductors can make excellent sensors. Current conduction in a semiconductor occurs via mobile or ""free"" electrons and holes, collectively known as charge carriers. Doping a semiconductor such as silicon with a small amount of impurity atoms, such as phosphorus or boron, greatly increases the number of free electrons or holes within the semiconductor. When a doped semiconductor contains excess holes it is called ""p-type"", and when it contains excess free electrons it is known as ""n-type"", where p (positive for holes) or n (negative for electrons) is the sign of the charge of the majority mobile charge carriers. The semiconductor material used in devices is doped under highly controlled conditions in a fabrication facility, or fab, to control precisely the location and concentration of p- and n-type dopants. The junctions which form where n-type and p-type semiconductors join together are called p–n junctions.