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wolfspeed.com SiC Custom Power Services Wolfspeed offers early access to our newest innovations in SiC power device and module technology through our power services pre-released products. These power services products include our pre-released 900V - 15kV Gen3 SiC MOSFETs. In addition, custom power services includes future generation 15kV SiC n-IGBTs, and 15kV SiC p-GTOs. All of these are available as device die or as packaged devices. In addition, our power services products include our pre-released 650V - 10kV SiC power modules. These advanced SiC power devices and modules offer improved conduction and switching performance across a broad voltage range, leading to higher efficiency and higher frequency operation. These nextgeneration SiC power devices and modules will enable you to select optimal voltage rating and efficiency for your end-system application, which will dramatically reduce the size and weight of your power system. Wolfspeed’s custom power services also offers system-level optimization to help customers integrate our products into their custom system to reach the most efficient, highest power-density solution possible. At Wolfspeed we collaborate with you to provide custom design services. It’s our mission to challenge the status quo, to stretch limits, to push past conventional thinking to conceive ever more efficient power devices. Tomorrow’s Technology Today • • • • • • 9 00V to 1700V Gen3 SiC MOSFETs 3 .3kV to 15kV Gen3 SiC MOSFETs 3 .3kV to 10kV SiC Schottky (JBS) Diodes 1 5kV SiC n-IGBTS 1 5kV SiC p-GTOs 6 50V to 10kV SiC Power Modules Powering More. Consuming Less.™ • Pre-released 900V to 15kV Gen3 SiC MOSFET Die and Packaged Devices • Future generation 15kV SiC n-IGBT and SiC p-GTO Die and Packaged Devices • Advanced 650V to 10kV SiC Power Modules © 2017 Wolfspeed. All rights reserved. The information in this document is subject to change without notice. wolfspeed.com Advantages of SiC Power Technology • Reduced Conduction and Switching Losses at Higher Voltages • Higher Efficiency and Higher Frequency Operation • Reduced Power System Size and Weight High Speed Switching of 10kV – 15kV SiC MOSFETs Conduction Performance of SiC Power Devices at Higher Voltages 30 15kV Gen3 SiC MOSFET 6.5 kV Si IGBT VBUS = 3.6 kV, TJ = 125˚C 25 20 20 15 15 10 10 5 5 0 0 0 0 10kV Gen3 SiC MOSFET 100 100 10 Switching Frequency (kHz) 10 100 22.5 kV SiC n-IGBT 6.5kV Gen3 SiC MOSFET 15 kV Gen3 SiC MOSFET VBUS = 10 kV, TJ = 150˚C 10 27.5 kV SiC n-IGBT 15kV SiC n-IGBT 10 kV Gen3 SiC MOSFET VBUS = 6 kV, TJ = 150˚C Maximum RMS Current (A) 25 100 RON,SP (mΩ-cm2) at VG = 20 V 30 3.3kV Gen3 SiC MOSFET 10 1 100 1.2kV Gen1 SiC MOSFET 22 kV SiC p-GTO 15 kV SiC p-GTO 1.2kV Gen2 SiC MOSFET 1.7kV Gen3 SiC MOSFET 1.2kV Gen3 SiC MOSFET 900V Gen3 SiC MOSFET Breakdown Voltage (V) 1 100 1,000 1,000 Silicon 1-D Limit at 25°C 10,000 10,000 SiC 1-D Limit at 25°C Pre-release SiC Power Devices and Modules 15kV SiC p-GTO 15kV SiC n-IGBT 10kV SiC MOSFETs 10kV, 120A SiC Power Module System-Level Opimization Learn More: Visit wolfspeed.com/power to learn more about our products and services. Have additional questions? Contact us at [email protected] Page 2 © 2017 Wolfspeed. All rights reserved. The information in this document is subject to change without notice.