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Semiconductor Materials and pn Junctions
Semiconductor Materials and pn Junctions

ANALYTICAL TEST STRUCTURE MODEL FOR DETERMINING
ANALYTICAL TEST STRUCTURE MODEL FOR DETERMINING

Electromagnetic Frequencies and Direct Current Transmission
Electromagnetic Frequencies and Direct Current Transmission

... detect the static magnetic field of the earth. Would the proposed Project be likely to affect animals that might spend more time near the DC line than do people? A. Studies of cattle have not provided any clear evidence that they detect variations in the earth’s geomagnetic field. Multiple studies ...
Modern magnetic field sensors – a review
Modern magnetic field sensors – a review

... AMR sensors are treated as slightly old-fashioned sensors (the effect was discovered in 1857 by Kelvin and sensors are mainly developed in 1970-1980). These sensors are shadowed by new GMR sensors but they still have many interesting advantages: - they are very simple in preparation, thus cheap mark ...
Automatic Electromagnetic Clutch
Automatic Electromagnetic Clutch

... both poles, a magnetic circuit is created. In an electromagnetic clutch, the north and south pole is created by a coil shell and a wound coil. In a clutch, when power is applied, a magnetic field is created in the coil. This field (flux) overcomes an air gap between the clutch rotor and the armature ...
Name: #_____ Test on:______ Magnetism Study Guide What are
Name: #_____ Test on:______ Magnetism Study Guide What are

... The earth is a magnet. Earth has a magnetic field. This field is very much like the magnetic field of a bar magnet. ...
Photovoltaic effect and interband magneto
Photovoltaic effect and interband magneto

... The study of interband magneto-optical transitions has been extensively used in order to determine accurate band parameters for many semiconductors. The theory for the quantization of electronic levels in a magnetic field was first developed by Landau. ' It was refined by Luttinger and Kohn to inclu ...
Best Intro to Electronic Theory ever
Best Intro to Electronic Theory ever

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Lecture_8

... moving at nearly the same velocity. This can be achieved using both a uniform electric field and a uniform magnetic field, arranged so they are at right angles to each other. Particles of charge q pass through slit S1 and enter the region where B points into the page and E points down from the posit ...
Electric Circuits and Electromagnetism Review
Electric Circuits and Electromagnetism Review

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... resistance wires. Insert the plug key. Measure the values of current and potential difference. Record the values in the table. Repeat the experiment by increasing the voltage in the battery eliminator. In each case record the values of current and potential difference. Find the resistance by taking ...
Electric Currents, Magnetic Forces
Electric Currents, Magnetic Forces

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Concept Summary

... o If you know E, then force felt by charge q is F = qE o Direction of force depends on sign of charge q  If q = + then F same direction as E  If q = - then F opposite direction as E  Point charge kq o E 2 (magnitude only - direction depends on whether q is + or -) r  Points radial out for q = + ...
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CuCoFe

Electromagnetic Field Basics
Electromagnetic Field Basics

... Changing electromagnetic fields occur any time we have a changing current traveling along a trace. If we are not careful with our system designs, these changing fields can couple unwanted signals into other circuits, a problem we call crosstalk (if the other circuits are nearby) or EMI (if the other ...
Spin Density Functional Based Search for Half
Spin Density Functional Based Search for Half

... also a metal with zero spin susceptibility, a property normally associated with insulators, whereas conventional metals have χ ∝ N(EF ), the Fermi level density of states. Due to mixing of atomic orbitals with neighboring nonmagnetic ions such as oxygen, magnetic ions commonly take on non-integral v ...
conductivity and resistance
conductivity and resistance

... 2a. Definition of Drift Velocity. The charge carrier drift velocity in a conducting material is proportional to the applied electric field strength. We can picture a conducting material as a “lattice” of atoms within which charge carrying particles (conduction electrons) move with a thermal distribu ...
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A d f T d A d f T d Agenda for Today

... As the capacitor is discharging, there is a current in the wire. ...
Sources and detectors in the microwave region
Sources and detectors in the microwave region

A low-noise ferrite magnetic shield
A low-noise ferrite magnetic shield

... ␮-metal can attenuate external fields by many orders of magnitude. The most sensitive measurements, however, are limited at the level of 1 – 10 fT Hz−1/2 by the magnetic noise generated by the innermost layer of the magnetic shield itself.2,3 Superconducting magnetic shields do not generate magnetic ...
Physics - Magnetism
Physics - Magnetism

Magnets and Electromagnets 8.1
Magnets and Electromagnets 8.1

Dzyaloshinsky—Moriya interactions induced by symmetry breaking
Dzyaloshinsky—Moriya interactions induced by symmetry breaking

... either by Moriya (Section 2.1) or by Fert and Levy (Section 2.2); then we derive the direction of D using the symmetry rules for several surfaces ij (Section 2.3). 2.1. Application of Moriya’s formalism to the (0 0 1) surface of the FCC lattice Moriya [3,4] has developed a microscopic model for calc ...
Question bank of physics - Kendriya Vidyalaya SAC, Vastrapur
Question bank of physics - Kendriya Vidyalaya SAC, Vastrapur

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Giant magnetoresistance



Giant magnetoresistance (GMR) is a quantum mechanical magnetoresistance effect observed in thin-film structures composed of alternating ferromagnetic and non-magnetic conductive layers. The 2007 Nobel Prize in Physics was awarded to Albert Fert and Peter Grünberg for the discovery of GMR.The effect is observed as a significant change in the electrical resistance depending on whether the magnetization of adjacent ferromagnetic layers are in a parallel or an antiparallel alignment. The overall resistance is relatively low for parallel alignment and relatively high for antiparallel alignment. The magnetization direction can be controlled, for example, by applying an external magnetic field. The effect is based on the dependence of electron scattering on the spin orientation.The main application of GMR is magnetic field sensors, which are used to read data in hard disk drives, biosensors, microelectromechanical systems (MEMS) and other devices. GMR multilayer structures are also used in magnetoresistive random-access memory (MRAM) as cells that store one bit of information.In literature, the term giant magnetoresistance is sometimes confused with colossal magnetoresistance of ferromagnetic and antiferromagnetic semiconductors, which is not related to the multilayer structure.
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